SE9701724D0 - A pn-diode of SiC and a method for production thereof - Google Patents
A pn-diode of SiC and a method for production thereofInfo
- Publication number
- SE9701724D0 SE9701724D0 SE9701724A SE9701724A SE9701724D0 SE 9701724 D0 SE9701724 D0 SE 9701724D0 SE 9701724 A SE9701724 A SE 9701724A SE 9701724 A SE9701724 A SE 9701724A SE 9701724 D0 SE9701724 D0 SE 9701724D0
- Authority
- SE
- Sweden
- Prior art keywords
- drift layer
- portions
- junction
- grid
- sic
- Prior art date
Links
- 230000005684 electric field Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9701724A SE9701724D0 (sv) | 1997-05-09 | 1997-05-09 | A pn-diode of SiC and a method for production thereof |
| US08/859,844 US5902117A (en) | 1997-05-09 | 1997-05-21 | PN-diode of SiC and a method for production thereof |
| EP98904481A EP0980589A1 (en) | 1997-05-09 | 1998-02-12 | A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| PCT/SE1998/000239 WO1998052232A1 (en) | 1997-05-09 | 1998-02-12 | A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| JP54910798A JP2001525990A (ja) | 1997-05-09 | 1998-02-12 | ＳｉＣからなるｐｎ型ダイオードおよびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9701724A SE9701724D0 (sv) | 1997-05-09 | 1997-05-09 | A pn-diode of SiC and a method for production thereof |
| US08/859,844 US5902117A (en) | 1997-05-09 | 1997-05-21 | PN-diode of SiC and a method for production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9701724D0 true SE9701724D0 (sv) | 1997-05-09 |
Family
ID=26662982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9701724A SE9701724D0 (sv) | 1997-05-09 | 1997-05-09 | A pn-diode of SiC and a method for production thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5902117A (sv) |
| SE (1) | SE9701724D0 (sv) |
| WO (1) | WO1998052232A1 (sv) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524900B2 (en) * | 2001-07-25 | 2003-02-25 | Abb Research, Ltd | Method concerning a junction barrier Schottky diode, such a diode and use thereof |
| US6791161B2 (en) * | 2002-04-08 | 2004-09-14 | Fabtech, Inc. | Precision Zener diodes |
| DE102005011702A1 (de) * | 2004-03-11 | 2005-09-29 | Siced Electronics Development Gmbh & Co. Kg | Halbleiterbauelement, insbesondere Diode, und zugehöriges Herstellungsverfahren |
| DE102005011703A1 (de) * | 2004-03-11 | 2005-09-29 | Siced Electronics Development Gmbh & Co. Kg | pn-Diode auf der Basis von Silicumcarbid und Verfahren zu deren Herstellung |
| US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
| JP5061506B2 (ja) * | 2006-06-05 | 2012-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| DE102007024461B4 (de) | 2007-05-25 | 2012-10-11 | Infineon Technologies Austria Ag | Halbleiterelement und Verfahren zu seiner Herstellung |
| JP6029397B2 (ja) * | 2012-09-14 | 2016-11-24 | 三菱電機株式会社 | 炭化珪素半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4153904A (en) * | 1977-10-03 | 1979-05-08 | Texas Instruments Incorporated | Semiconductor device having a high breakdown voltage junction characteristic |
| DE2846637A1 (de) * | 1978-10-11 | 1980-04-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen |
| GB2134705B (en) * | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
| US4771011A (en) * | 1984-05-09 | 1988-09-13 | Analog Devices, Incorporated | Ion-implanted process for forming IC wafer with buried-Zener diode and IC structure made with such process |
| US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
| DE4405815A1 (de) * | 1993-02-24 | 1994-08-25 | Samsung Electronics Co Ltd | Halbleitervorrichtung mit einer Anodenschicht, die durch selektive Diffusion ausgebildete Bereiche geringerer Konzentration aufweist |
| SE9601176D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby |
| SE9601174D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having a semiconductor layer of SiC and such a device |
| SE9601175D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device by the use of an implanting step and a device produced thereby |
| SE9602745D0 (sv) * | 1996-07-11 | 1996-07-11 | Abb Research Ltd | A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device |
| US5801836A (en) * | 1996-07-16 | 1998-09-01 | Abb Research Ltd. | Depletion region stopper for PN junction in silicon carbide |
-
1997
- 1997-05-09 SE SE9701724A patent/SE9701724D0/sv unknown
- 1997-05-21 US US08/859,844 patent/US5902117A/en not_active Expired - Lifetime
-
1998
- 1998-02-12 WO PCT/SE1998/000239 patent/WO1998052232A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998052232A1 (en) | 1998-11-19 |
| US5902117A (en) | 1999-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7114873B2 (ja) | 半導体装置 | |
| ATE226760T1 (de) | Schottkybarriere gleichrichter | |
| DE59914922D1 (de) | Leistungshalbleiterbauelement | |
| US20060208261A1 (en) | Semiconductor device and manufacturing method thereof | |
| US20120292636A1 (en) | Sic devices with high blocking voltage terminated by a negative bevel | |
| SE9802909D0 (sv) | A Method för producing a pn-junction for a semiconductor device of SIC as well as a semiconductor device of SIC having a pn-junction | |
| TW200507231A (en) | ESD protection for semiconductor products | |
| RU2011106038A (ru) | Фотоэлектрический элемент, имеющий высокую эффективность преобразования | |
| US9306113B2 (en) | Silicon light emitting device utilising reach-through effects | |
| JP2004537162A5 (sv) | ||
| CA2297037A1 (en) | Semiconductor devices and methods with tunnel contact hole sources | |
| DE60222099D1 (de) | Halbleiteranordnungen mit feldformungsgebieten | |
| US20160268422A1 (en) | Method of Manufacturing a Semiconductor Device | |
| SE9701724D0 (sv) | A pn-diode of SiC and a method for production thereof | |
| US20050173776A1 (en) | Semiconductor device with edge structure | |
| CN103325839A (zh) | 一种mos超势垒整流器件及其制造方法 | |
| SE519975C2 (sv) | Halvledarstruktur för högspänningshalvledarkomponenter | |
| CN103426879B (zh) | 瞬态电压抑制器及其制造方法 | |
| CN105226091A (zh) | 一种绝缘栅双极晶体管及其制备方法 | |
| CN1714456A (zh) | 辐射发射半导体器件和制造该器件的方法 | |
| US20150102362A1 (en) | Silicon carbide power device equipped with termination structure | |
| CN101523606A (zh) | 高击穿电压二极管及其形成方法 | |
| CN109449153A (zh) | 一种功率器件防护芯片及其制造方法 | |
| KR960043304A (ko) | 정전기에 의한 파괴로부터 반도체 소자를 보호하는 보호 다이오드 | |
| CN204834631U (zh) | 一种采用沟槽场效应实现自适应场截止技术的器件结构 |