SE8904120L - Foer hoegspaenning avsedd integrerad krets - Google Patents
Foer hoegspaenning avsedd integrerad kretsInfo
- Publication number
- SE8904120L SE8904120L SE8904120A SE8904120A SE8904120L SE 8904120 L SE8904120 L SE 8904120L SE 8904120 A SE8904120 A SE 8904120A SE 8904120 A SE8904120 A SE 8904120A SE 8904120 L SE8904120 L SE 8904120L
- Authority
- SE
- Sweden
- Prior art keywords
- integrated circuit
- high voltage
- before high
- voltage intended
- intended integrated
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
- H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Dicing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
GB9024952A GB2238910B (en) | 1989-12-06 | 1990-11-16 | High voltage integrated circuit |
KR1019900018872A KR960001614B1 (ko) | 1989-12-06 | 1990-11-21 | 고전압 집적회로 |
IT02220190A IT1243934B (it) | 1989-12-06 | 1990-11-27 | Circuito integrato ad alta tensione. |
US07/855,490 US5861656A (en) | 1989-12-06 | 1992-03-23 | High voltage integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8904120D0 SE8904120D0 (sv) | 1989-12-06 |
SE8904120L true SE8904120L (sv) | 1991-06-07 |
SE465193B SE465193B (sv) | 1991-08-05 |
Family
ID=20377705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
Country Status (5)
Country | Link |
---|---|
US (1) | US5861656A (sv) |
KR (1) | KR960001614B1 (sv) |
GB (1) | GB2238910B (sv) |
IT (1) | IT1243934B (sv) |
SE (1) | SE465193B (sv) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246070B1 (en) * | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
JP4493741B2 (ja) * | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1026732A1 (en) * | 1999-02-05 | 2000-08-09 | Motorola, Inc. | A method of forming a high voltage semiconductor device |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
JP2003229502A (ja) * | 2002-02-01 | 2003-08-15 | Mitsubishi Electric Corp | 半導体装置 |
US6683329B2 (en) * | 2002-02-28 | 2004-01-27 | Oki Electric Industry Co., Ltd. | Semiconductor device with slot above guard ring |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836998A (en) * | 1969-01-16 | 1974-09-17 | Signetics Corp | High voltage bipolar semiconductor device and integrated circuit using the same and method |
US3611071A (en) * | 1969-04-10 | 1971-10-05 | Ibm | Inversion prevention system for semiconductor devices |
JPS4836598B1 (sv) * | 1969-09-05 | 1973-11-06 | ||
JPS4914390B1 (sv) * | 1969-10-29 | 1974-04-06 | ||
JPS501872B1 (sv) * | 1970-01-30 | 1975-01-22 | ||
JPS4940394B1 (sv) * | 1970-08-28 | 1974-11-01 | ||
DE2603747A1 (de) * | 1976-01-31 | 1977-08-04 | Licentia Gmbh | Integrierte schaltungsanordnung |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
JPS5955037A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体装置 |
JPS6066444A (ja) * | 1983-09-21 | 1985-04-16 | Seiko Epson Corp | 半導体装置 |
JPS60247940A (ja) * | 1984-05-23 | 1985-12-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
US4825278A (en) * | 1985-10-17 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Radiation hardened semiconductor devices |
JPH01184942A (ja) * | 1988-01-20 | 1989-07-24 | Toshiba Corp | トリミング素子とその電気短絡方法 |
JPH0237776A (ja) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | 半導体装置 |
-
1989
- 1989-12-06 SE SE8904120A patent/SE465193B/sv not_active IP Right Cessation
-
1990
- 1990-11-16 GB GB9024952A patent/GB2238910B/en not_active Expired - Fee Related
- 1990-11-21 KR KR1019900018872A patent/KR960001614B1/ko not_active IP Right Cessation
- 1990-11-27 IT IT02220190A patent/IT1243934B/it active IP Right Grant
-
1992
- 1992-03-23 US US07/855,490 patent/US5861656A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
SE8904120D0 (sv) | 1989-12-06 |
US5861656A (en) | 1999-01-19 |
SE465193B (sv) | 1991-08-05 |
KR920000146A (ko) | 1992-01-10 |
IT9022201A1 (it) | 1991-06-07 |
IT1243934B (it) | 1994-06-28 |
KR960001614B1 (ko) | 1996-02-02 |
GB2238910B (en) | 1993-08-11 |
IT9022201A0 (it) | 1990-11-27 |
GB9024952D0 (en) | 1991-01-02 |
GB2238910A (en) | 1991-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAL | Patent in force |
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NUG | Patent has lapsed |