SE8104133L - CREATION OF SURFACE SAMPLES - Google Patents
CREATION OF SURFACE SAMPLESInfo
- Publication number
- SE8104133L SE8104133L SE8104133A SE8104133A SE8104133L SE 8104133 L SE8104133 L SE 8104133L SE 8104133 A SE8104133 A SE 8104133A SE 8104133 A SE8104133 A SE 8104133A SE 8104133 L SE8104133 L SE 8104133L
- Authority
- SE
- Sweden
- Prior art keywords
- deep ultraviolet
- window
- resist composition
- optical absorption
- creation
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- -1 aromatic azide Chemical class 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
A negative acting resist composition is used which comprises a novolak resin which has a window of low optical absorption in the deep ultraviolet range and an aromatic azide sensitizer which has a complementary peak of high optical absorption in the deep ultraviolet range. The resist composition is exposed with deep ultraviolet radiation in the window/peak region, for example, at about 250 to 265 nm, and is thereafter developed with an aqueous alkaline solvent to provide a negative surface relief pattern.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16575980A | 1980-07-03 | 1980-07-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE8104133L true SE8104133L (en) | 1982-01-04 |
Family
ID=22600342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8104133A SE8104133L (en) | 1980-07-03 | 1981-07-02 | CREATION OF SURFACE SAMPLES |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5745239A (en) |
DE (1) | DE3125572A1 (en) |
FR (1) | FR2486259A1 (en) |
GB (1) | GB2079481B (en) |
IT (1) | IT1138814B (en) |
SE (1) | SE8104133L (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56162744A (en) * | 1980-05-19 | 1981-12-14 | Hitachi Ltd | Formation of fine pattern |
DE3234301A1 (en) * | 1982-09-16 | 1984-03-22 | Merck Patent Gmbh, 6100 Darmstadt | NEW BISAZIDO COMPOUNDS, THESE LIGHT SENSITIVE COMPOSITIONS AND METHOD FOR PRODUCING RELIEF STRUCTURES |
DE3337315A1 (en) * | 1982-10-13 | 1984-04-19 | Tokyo Ohka Kogyo Co., Ltd., Kawasaki, Kanagawa | DOUBLE-LIGHT SENSITIVE COMPOSITIONS AND METHOD FOR PRODUCING IMAGE-PATTERNED PHOTORESIS LAYERS |
JPS60107644A (en) * | 1983-09-16 | 1985-06-13 | フイリツプ エイ.ハント ケミカル コ−ポレ−シヨン | Developable water negative resist composition |
US4551409A (en) * | 1983-11-07 | 1985-11-05 | Shipley Company Inc. | Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide |
GB8611229D0 (en) * | 1986-05-08 | 1986-06-18 | Ucb Sa | Forming positive pattern |
JPH02254450A (en) * | 1989-03-29 | 1990-10-15 | Toshiba Corp | Resist |
DE4018427A1 (en) * | 1990-06-14 | 1992-01-16 | Samsung Electronics Co Ltd | PHOTOLITOGRAPHY METHOD FOR TRAINING A FINELINE PATTERN |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1597614B2 (en) * | 1967-07-07 | 1977-06-23 | Hoechst Ag, 6000 Frankfurt | LIGHT-SENSITIVE COPY DIMENSIONS |
US3923522A (en) * | 1973-07-18 | 1975-12-02 | Oji Paper Co | Photosensitive composition |
JPS5140452B2 (en) * | 1973-07-23 | 1976-11-04 | ||
JPS5934293B2 (en) * | 1977-04-20 | 1984-08-21 | 王子製紙株式会社 | photosensitive composition |
DE2948324C2 (en) * | 1978-12-01 | 1993-01-14 | Hitachi, Ltd., Tokio/Tokyo | Photosensitive composition containing a bisazide compound and method for forming patterns |
JPS5677843A (en) * | 1979-11-30 | 1981-06-26 | Fujitsu Ltd | Resist pattern forming method |
JPS56162744A (en) * | 1980-05-19 | 1981-12-14 | Hitachi Ltd | Formation of fine pattern |
-
1981
- 1981-06-23 IT IT22524/81A patent/IT1138814B/en active
- 1981-06-29 FR FR8112705A patent/FR2486259A1/en not_active Withdrawn
- 1981-06-30 DE DE19813125572 patent/DE3125572A1/en not_active Withdrawn
- 1981-07-01 GB GB8120305A patent/GB2079481B/en not_active Expired
- 1981-07-02 SE SE8104133A patent/SE8104133L/en not_active Application Discontinuation
- 1981-07-02 JP JP56104320A patent/JPS5745239A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5745239A (en) | 1982-03-15 |
GB2079481A (en) | 1982-01-20 |
FR2486259A1 (en) | 1982-01-08 |
IT1138814B (en) | 1986-09-17 |
IT8122524A0 (en) | 1981-06-23 |
GB2079481B (en) | 1984-05-02 |
DE3125572A1 (en) | 1982-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 8104133-7 |