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GB8611229D0 - Forming positive pattern - Google Patents

Forming positive pattern

Info

Publication number
GB8611229D0
GB8611229D0 GB868611229A GB8611229A GB8611229D0 GB 8611229 D0 GB8611229 D0 GB 8611229D0 GB 868611229 A GB868611229 A GB 868611229A GB 8611229 A GB8611229 A GB 8611229A GB 8611229 D0 GB8611229 D0 GB 8611229D0
Authority
GB
United Kingdom
Prior art keywords
positive pattern
forming positive
forming
pattern
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB868611229A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UCB SA
Original Assignee
UCB SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UCB SA filed Critical UCB SA
Priority to GB868611229A priority Critical patent/GB8611229D0/en
Publication of GB8611229D0 publication Critical patent/GB8611229D0/en
Priority to EP87870061A priority patent/EP0248779A1/en
Priority to IL82436A priority patent/IL82436A/en
Priority to JP62111658A priority patent/JPS6324248A/en
Priority to KR870004578A priority patent/KR870011682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/475—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB868611229A 1986-05-08 1986-05-08 Forming positive pattern Pending GB8611229D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB868611229A GB8611229D0 (en) 1986-05-08 1986-05-08 Forming positive pattern
EP87870061A EP0248779A1 (en) 1986-05-08 1987-05-06 Process for producing positive patterns in a photoresist layer
IL82436A IL82436A (en) 1986-05-08 1987-05-06 Process of forming a positive pattern in a photoresist layer
JP62111658A JPS6324248A (en) 1986-05-08 1987-05-07 Formation of positive pattern in photoresist layer
KR870004578A KR870011682A (en) 1986-05-08 1987-05-08 Process of making positive pattern on photoresist layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868611229A GB8611229D0 (en) 1986-05-08 1986-05-08 Forming positive pattern

Publications (1)

Publication Number Publication Date
GB8611229D0 true GB8611229D0 (en) 1986-06-18

Family

ID=10597517

Family Applications (1)

Application Number Title Priority Date Filing Date
GB868611229A Pending GB8611229D0 (en) 1986-05-08 1986-05-08 Forming positive pattern

Country Status (5)

Country Link
EP (1) EP0248779A1 (en)
JP (1) JPS6324248A (en)
KR (1) KR870011682A (en)
GB (1) GB8611229D0 (en)
IL (1) IL82436A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3772267D1 (en) * 1986-06-12 1991-09-26 Matsushita Electric Ind Co Ltd IMAGE GENERATION PROCESS.
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
NL8801255A (en) * 1988-05-16 1989-12-18 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
JP2521520B2 (en) * 1988-07-18 1996-08-07 松下電器産業株式会社 Pattern formation method
US5356758A (en) * 1988-12-28 1994-10-18 Texas Instruments Incorporated Method and apparatus for positively patterning a surface-sensitive resist on a semiconductor wafer
JPH0391754A (en) * 1989-09-05 1991-04-17 Mitsubishi Electric Corp Pattern forming method
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JP2815024B2 (en) * 1989-11-13 1998-10-27 富士通株式会社 Method of forming resist pattern
AU629032B2 (en) * 1990-05-29 1992-09-24 Kuninobu Kurumisawa Letterpress for transferring and method of transferring by use of the letterpress for transferring
EP0492256B1 (en) * 1990-12-20 1996-08-14 Siemens Aktiengesellschaft Photolithographic patterning
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
EP0760971B1 (en) * 1994-05-25 1999-08-04 Siemens Aktiengesellschaft Dry-developable positive resist
US20100028622A1 (en) * 2006-09-26 2010-02-04 Yutaka Shoji Kaisha, Ltd. Nonthermal transfer sheet and method for manufacturing the same
CN114613672A (en) * 2022-05-16 2022-06-10 广州粤芯半导体技术有限公司 Method for manufacturing semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
IT1138814B (en) * 1980-07-03 1986-09-17 Rca Corp METHOD FOR THE FORMATION OF SURFACE SURFACE DRAWINGS WITH FAR ULTRAVIOLET AND PHOTOSENSITIVE PROTECTIVE COMPOSITION FOR THIS METHOD
KR880002518B1 (en) * 1981-07-15 1988-11-26 미다가쓰시께 Radiation sensitive composition and patternformation method
US4554237A (en) * 1981-12-25 1985-11-19 Hitach, Ltd. Photosensitive resin composition and method for forming fine patterns with said composition
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
EP0135900A3 (en) * 1983-09-16 1986-06-11 Olin Hunt Specialty Products, Inc. Aqueous developable negative resist compositions
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation

Also Published As

Publication number Publication date
KR870011682A (en) 1987-12-26
EP0248779A1 (en) 1987-12-09
IL82436A (en) 1990-12-23
JPS6324248A (en) 1988-02-01
IL82436A0 (en) 1987-11-30

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