SE414357B - Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp - Google Patents
Overspenningsskydd for skydd av halvledarkomponenter av lageffekttypInfo
- Publication number
- SE414357B SE414357B SE7808731A SE7808731A SE414357B SE 414357 B SE414357 B SE 414357B SE 7808731 A SE7808731 A SE 7808731A SE 7808731 A SE7808731 A SE 7808731A SE 414357 B SE414357 B SE 414357B
- Authority
- SE
- Sweden
- Prior art keywords
- thyristor
- common
- overvoltage
- protection
- branches
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 230000000694 effects Effects 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000002775 capsule Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 12
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thyristors (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7808731A SE414357B (sv) | 1978-08-17 | 1978-08-17 | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
| MX178021A MX148153A (es) | 1978-08-17 | 1979-06-11 | Mejoras a circuito de proteccion de sobrevoltaje para componentes semiconductores de baja energia |
| DE19792932152 DE2932152A1 (de) | 1978-08-17 | 1979-08-08 | Ueberspannungsschutz zum schutz von einheiten, die halbleiterbauelemente fuer kleine leistungen enthalten |
| AU49849/79A AU530976B2 (en) | 1978-08-17 | 1979-08-13 | Overvoltage protection means for protection of semiconductor components |
| US06/065,774 US4282555A (en) | 1978-08-17 | 1979-08-13 | Overvoltage protection means for protecting low power semiconductor components |
| FR7920693A FR2433845A1 (fr) | 1978-08-17 | 1979-08-14 | Coupe-circuit de surtension pour la protection de composants semi-conducteurs du type a basse puissance |
| NL7906222A NL7906222A (nl) | 1978-08-17 | 1979-08-15 | Beveiligingsinrichting voor het beveiligen van halfge- leidercomponenten voor een laag vermogen. |
| JP10392179A JPS5529297A (en) | 1978-08-17 | 1979-08-15 | Overvoltage protecting device |
| IT6867479A IT1118827B (it) | 1978-08-17 | 1979-08-16 | Dispositivo di protezione controsovratensioni per componenti a semiconduttori a bassa potenza |
| BR7905258A BR7905258A (pt) | 1978-08-17 | 1979-08-16 | Dispositivo de protecao contra sobrevoltagens |
| GB7928629A GB2030387B (en) | 1978-08-17 | 1979-08-16 | Overvoltage protection means for the protection of semiconductor components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7808731A SE414357B (sv) | 1978-08-17 | 1978-08-17 | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7808731L SE7808731L (sv) | 1980-02-18 |
| SE414357B true SE414357B (sv) | 1980-07-21 |
Family
ID=20335606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7808731A SE414357B (sv) | 1978-08-17 | 1978-08-17 | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4282555A (es) |
| JP (1) | JPS5529297A (es) |
| AU (1) | AU530976B2 (es) |
| BR (1) | BR7905258A (es) |
| DE (1) | DE2932152A1 (es) |
| FR (1) | FR2433845A1 (es) |
| GB (1) | GB2030387B (es) |
| IT (1) | IT1118827B (es) |
| MX (1) | MX148153A (es) |
| NL (1) | NL7906222A (es) |
| SE (1) | SE414357B (es) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1982002287A1 (en) * | 1980-12-23 | 1982-07-08 | Hammarberg Lars Erik | Voltage controlled transient protection unit |
| WO1983000775A1 (en) * | 1981-08-25 | 1983-03-03 | Eklund, Klas-Hakan | A planar transistor with an integrated overvoltage guard |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE423946B (sv) * | 1980-10-08 | 1982-06-14 | Asea Ab | Tyristor anordnad for sjelvtendning |
| EP0050034A1 (en) * | 1980-10-14 | 1982-04-21 | Power Integrity Corporation | Transient surge protective circuit |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| NL8100242A (nl) * | 1981-01-20 | 1982-08-16 | Philips Nv | Overspanningsbeveiliging van een lijncircuit. |
| JPS59107539U (ja) * | 1983-01-06 | 1984-07-19 | 東京電力株式会社 | サ−ジ保護回路 |
| JPS60263461A (ja) * | 1984-06-11 | 1985-12-26 | Nec Corp | 高耐圧縦形トランジスタ装置およびその製造方法 |
| HU192996B (en) * | 1984-10-12 | 1987-08-28 | Budapesti Mueszaki Egyetem | Circuit arrangement for automatic overload protection of current transformers |
| EP0186873B1 (en) * | 1984-12-24 | 1991-09-25 | Nippon Telegraph And Telephone Corporation | Protector circuit |
| JPS61150617A (ja) * | 1984-12-24 | 1986-07-09 | 日本電信電話株式会社 | サ−ジ防護回路 |
| US4644440A (en) * | 1985-01-08 | 1987-02-17 | Westinghouse Electric Corp. | Redundant power supply arrangement with surge protection |
| US4644437A (en) * | 1985-11-01 | 1987-02-17 | At&T Bell Laboratories | Telephone subscriber loop overvoltage protection integrated circuit |
| US5012317A (en) * | 1986-04-11 | 1991-04-30 | Texas Instruments Incorporated | Electrostatic discharge protection circuit |
| GB2193596A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | A semiconductor diode |
| US4809324A (en) * | 1987-07-27 | 1989-02-28 | Siemens Transmission Systems, Inc. | Subscriber line interface circuit (SLIC) isolation from lighting-induced ground overshoots |
| FR2623663B1 (fr) * | 1987-11-24 | 1990-04-13 | Sgs Thomson Microelectronics | Assemblage monolithique de diodes de protection et systemes de protection |
| JP2570344B2 (ja) * | 1987-12-09 | 1997-01-08 | 三菱電機株式会社 | 画像表示装置 |
| US4905119A (en) * | 1988-06-27 | 1990-02-27 | Teccor Electronics, Inc. | Solid state overvoltage protection circuit |
| US5285100A (en) * | 1988-07-22 | 1994-02-08 | Texas Instruments Incorporated | Semiconductor switching device |
| DE3835569A1 (de) * | 1988-10-19 | 1990-05-03 | Telefunken Electronic Gmbh | Schutzanordnung |
| GB2225908B (en) * | 1988-11-11 | 1993-01-13 | Texas Instruments Ltd | Improvements in or relating to overvoltage protection circuits |
| US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
| JPH03249137A (ja) * | 1990-02-28 | 1991-11-07 | Nippon Steel Corp | 焼結原料の装入方法 |
| FR2664760B1 (fr) * | 1990-07-13 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions et sa realisation monolithique. |
| FR2664744B1 (fr) * | 1990-07-16 | 1993-08-06 | Sgs Thomson Microelectronics | Diode pin a faible surtension initiale. |
| GB9021222D0 (en) * | 1990-09-28 | 1990-11-14 | Raychem Ltd | Circuit protection device |
| US5341114A (en) * | 1990-11-02 | 1994-08-23 | Ail Systems, Inc. | Integrated limiter and amplifying devices |
| FR2670340B1 (fr) * | 1990-12-07 | 1993-03-12 | Sgs Thomson Microelectronics | Circuit de protection a faible capacite. |
| FR2670338B1 (fr) * | 1990-12-07 | 1993-03-26 | Sgs Thomson Microelectronics | Circuit de protection programmable et sa realisation monolithique. |
| FR2670339B1 (fr) * | 1990-12-07 | 1993-03-12 | Sgs Thomson Microelectronics | Circuit de protection limitant les surtensions entre deux limites choisies et son integration monolithique. |
| JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
| FR2677821B1 (fr) * | 1991-06-11 | 1993-10-08 | Sgs Thomson Microelectronics Sa | Composant de protection bidirectionnel. |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| JP3142617B2 (ja) * | 1991-11-27 | 2001-03-07 | 新電元工業株式会社 | サージ防護素子 |
| FR2688941B1 (fr) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode. |
| KR950701493A (ko) * | 1992-05-27 | 1995-04-28 | 데이비드 더블유. 밀러 | 균배양과 분생자의 저장방법 |
| FR2699015B1 (fr) | 1992-12-04 | 1995-02-24 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions. |
| FR2703850B1 (fr) * | 1993-04-09 | 1995-06-30 | Sgs Thomson Microelectronics | Protection d'un alternateur triphase automobile. |
| US5483086A (en) * | 1993-04-20 | 1996-01-09 | Shindengen Electric Manufacturing Co., Ltd. | Four layer semiconductor surge protector having plural short-circuited junctions |
| FR2713400B1 (fr) * | 1993-11-29 | 1996-02-16 | Sgs Thomson Microelectronics | Composant de protection triangle. |
| US5563761A (en) * | 1995-08-11 | 1996-10-08 | The Whitaker Corporation | Transient voltage surge protection assembly for telecommunications lines |
| US5717561A (en) * | 1995-08-11 | 1998-02-10 | The Whitaker Corporation | Sharing arrangement for surge protection circuitry |
| JP3131823B2 (ja) * | 1996-05-16 | 2001-02-05 | 株式会社サンコーシヤ | 多端子サージ防護デバイス |
| US6169672B1 (en) * | 1996-07-03 | 2001-01-02 | Hitachi, Ltd. | Power converter with clamping circuit |
| TW407371B (en) * | 1997-04-25 | 2000-10-01 | Siemens Ag | Equipment to limited alternative current, especially in short-circuit case |
| US5838527A (en) * | 1997-04-29 | 1998-11-17 | Lawrence; Zachary Andrew | Electrical surge protection apparatus |
| GB2354381B (en) * | 1998-05-29 | 2003-03-26 | Porta Systems Corp | Low capacitance surge protector for high speed data transmission |
| US6377434B1 (en) * | 1999-10-14 | 2002-04-23 | Lucent Technologies Inc. | Individual secondary protection device |
| JP4354069B2 (ja) * | 2000-02-08 | 2009-10-28 | 日本碍子株式会社 | 逆導通機能を有する半導体装置 |
| ITMI20011461A1 (it) * | 2001-07-09 | 2003-01-09 | St Microelectronics Srl | Dispositivo di potenza con circuito stabilizzatore di tensione integrato e procedimento per la realizzazione del medesimo |
| US6680839B2 (en) * | 2001-12-28 | 2004-01-20 | Corning Cable Systems Llc | Apparatus and method for reducing and balancing the capacitance of overvoltage protector in high frequency transmissions |
| US20030123299A1 (en) * | 2002-01-02 | 2003-07-03 | Annavajjhala Ravi P. | Protection circuit |
| GB0215089D0 (en) * | 2002-06-29 | 2002-08-07 | Power Innovations Ltd | Overvoltage protection |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
| US6862162B2 (en) * | 2003-04-23 | 2005-03-01 | Teccor Electronics, Lp | Thyristor circuit providing overcurrent protection to a low impedance load |
| US7515391B2 (en) * | 2005-10-19 | 2009-04-07 | Littlefuse, Inc. | Linear low capacitance overvoltage protection circuit |
| US20070236849A1 (en) * | 2006-04-06 | 2007-10-11 | Littelfuse, Inc. | Leadless integrated circuit protection device |
| US8649149B1 (en) * | 2011-03-07 | 2014-02-11 | Adtran, Inc. | Dual level surge protector circuit for telecommunication line |
| EP2870611B1 (en) * | 2012-07-05 | 2020-12-16 | Littelfuse, Inc. | Crowbar device for voltage transient circuit protection |
| FR3004019A1 (fr) * | 2013-03-29 | 2014-10-03 | St Microelectronics Tours Sas | Composant de protection contre des surtensions |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL258073A (es) * | 1960-11-17 | |||
| GB960667A (en) * | 1961-04-26 | 1964-06-10 | Gen Electric | Voltage surge protector |
| US3475653A (en) * | 1965-01-11 | 1969-10-28 | Res Iii Inc | Electrical circuit protector |
| US3631264A (en) * | 1970-02-11 | 1971-12-28 | Sybron Corp | Intrinsically safe electrical barrier system and improvements therein |
| FR2096663B1 (es) * | 1970-05-12 | 1973-07-13 | Edf | |
| GB1412036A (en) * | 1972-04-06 | 1975-10-29 | Foxboro Co | Interface assembly in a process control system for use where there is a fire hazard |
| US3904931A (en) * | 1973-08-03 | 1975-09-09 | Rca Corp | Overvoltage protection circuit |
| GB1470270A (en) * | 1974-03-27 | 1977-04-14 | Petrolite Corp | Redundant intrinsically safe electrical barrier |
| DD111128A1 (es) * | 1974-04-08 | 1975-01-20 | ||
| JPS515633U (es) * | 1974-06-28 | 1976-01-16 | ||
| DE2436033A1 (de) * | 1974-07-26 | 1976-02-05 | Bbc Brown Boveri & Cie | Schaltungsanordnung zum schutz der loeschthyristoren von stromrichtern |
| JPS5172216A (en) * | 1974-12-20 | 1976-06-22 | Hitachi Ltd | Handotaitsuwaromono hogokairo |
| JPS5329551A (en) * | 1976-08-31 | 1978-03-18 | Shikoku Elec Power | Thunder arresting circuit |
| US4158863A (en) * | 1978-03-07 | 1979-06-19 | American Optical Corporation | Input overload protection circuit |
-
1978
- 1978-08-17 SE SE7808731A patent/SE414357B/sv not_active IP Right Cessation
-
1979
- 1979-06-11 MX MX178021A patent/MX148153A/es unknown
- 1979-08-08 DE DE19792932152 patent/DE2932152A1/de active Granted
- 1979-08-13 AU AU49849/79A patent/AU530976B2/en not_active Ceased
- 1979-08-13 US US06/065,774 patent/US4282555A/en not_active Expired - Lifetime
- 1979-08-14 FR FR7920693A patent/FR2433845A1/fr active Granted
- 1979-08-15 NL NL7906222A patent/NL7906222A/nl not_active Application Discontinuation
- 1979-08-15 JP JP10392179A patent/JPS5529297A/ja active Granted
- 1979-08-16 BR BR7905258A patent/BR7905258A/pt not_active IP Right Cessation
- 1979-08-16 GB GB7928629A patent/GB2030387B/en not_active Expired
- 1979-08-16 IT IT6867479A patent/IT1118827B/it active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1982002287A1 (en) * | 1980-12-23 | 1982-07-08 | Hammarberg Lars Erik | Voltage controlled transient protection unit |
| WO1983000775A1 (en) * | 1981-08-25 | 1983-03-03 | Eklund, Klas-Hakan | A planar transistor with an integrated overvoltage guard |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5529297A (en) | 1980-03-01 |
| NL7906222A (nl) | 1980-02-19 |
| DE2932152C2 (es) | 1988-08-11 |
| SE7808731L (sv) | 1980-02-18 |
| BR7905258A (pt) | 1980-05-06 |
| DE2932152A1 (de) | 1980-02-28 |
| US4282555A (en) | 1981-08-04 |
| MX148153A (es) | 1983-03-18 |
| FR2433845A1 (fr) | 1980-03-14 |
| GB2030387A (en) | 1980-04-02 |
| JPH0145296B2 (es) | 1989-10-03 |
| AU530976B2 (en) | 1983-08-04 |
| IT1118827B (it) | 1986-03-03 |
| FR2433845B1 (es) | 1984-10-26 |
| GB2030387B (en) | 1983-05-05 |
| IT7968674A0 (it) | 1979-08-16 |
| AU4984979A (en) | 1980-02-21 |
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