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SE403214B - PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS - Google Patents

PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS

Info

Publication number
SE403214B
SE403214B SE7510075A SE7510075A SE403214B SE 403214 B SE403214 B SE 403214B SE 7510075 A SE7510075 A SE 7510075A SE 7510075 A SE7510075 A SE 7510075A SE 403214 B SE403214 B SE 403214B
Authority
SE
Sweden
Prior art keywords
monolitical
procedure
manufacturing
complementary transistors
transistors
Prior art date
Application number
SE7510075A
Other languages
Swedish (sv)
Other versions
SE7510075L (en
Inventor
W E Beadle
S F Moyer
A A Yiannoulos
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7510075L publication Critical patent/SE7510075L/en
Publication of SE403214B publication Critical patent/SE403214B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
SE7510075A 1974-09-19 1975-09-10 PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS SE403214B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (2)

Publication Number Publication Date
SE7510075L SE7510075L (en) 1976-03-22
SE403214B true SE403214B (en) 1978-07-31

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510075A SE403214B (en) 1974-09-19 1975-09-10 PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS

Country Status (10)

Country Link
JP (1) JPS5157172A (en)
BE (1) BE833455A (en)
CA (1) CA1038968A (en)
DE (1) DE2541161A1 (en)
ES (1) ES440909A0 (en)
FR (1) FR2285717A1 (en)
GB (1) GB1525247A (en)
IT (1) IT1042581B (en)
NL (1) NL7510994A (en)
SE (1) SE403214B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (en) * 1986-01-13 1995-02-15 三洋電機株式会社 Vertical PNP transistor
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Also Published As

Publication number Publication date
IT1042581B (en) 1980-01-30
GB1525247A (en) 1978-09-20
NL7510994A (en) 1976-03-23
CA1038968A (en) 1978-09-19
JPS5157172A (en) 1976-05-19
FR2285717A1 (en) 1976-04-16
ES440909A0 (en) 1977-03-16
DE2541161A1 (en) 1976-04-01
BE833455A (en) 1976-01-16
FR2285717B1 (en) 1980-04-30
SE7510075L (en) 1976-03-22

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