RU2467468C1 - Broadband current amplifier - Google Patents

Abstract

FIELD: physics, radio.

SUBSTANCE: invention relates to radio engineering and communication and can be used as an analogue signal amplifier, in design of analogue microcircuits of various purposes (e.g. microwave current amplifiers, signal mixers and multipliers etc). The broadband current amplifier includes a first (15) and a second (16) additional transistor, whose bases are connected to an auxiliary voltage source (8); the emitter of the first (15) additional transistor is connected the first (2) input of the device; the emitter of the second (16) additional transistor is connected to the second (6) input of the device; the collector of the first (15) additional transistor is connected to the base of the second (9) input transistor and a first (17) additional load circuit; the collector of the second (16) additional transistor is connected to the base of the fourth (10) input transistor and a second (18) additional load circuit.

EFFECT: reducing the allowable supply voltage of a broadband amplifier to 1,5 V while maintaining basic quality factors.

2 cl, 6 dwg

Description

The invention relates to the field of radio engineering and communication and can be used as a device for amplifying analog signals in the structure of analog microcircuits for various functional purposes (for example, microwave current amplifiers, mixers and signal multipliers, etc.).

In modern microelectronics, the so-called Hilbert current amplifiers are widely used [1]. Their main advantage is a wide range of operating frequencies and the most complete use of high-frequency properties of transistors used. Such amplifiers have become the basic functional unit of many microwave products [1-17].

The closest prototype of the claimed device is a broadband amplifier (SHU), described in the patent of Siemens US 4,277,756 (figure 1). In addition, this architecture is present in many other publications [1-17].

The SHU-prototype contains the first 1 input transistor, the emitter of which is connected to the first 2 current input and connected through the first 3 current-stabilizing two-terminal devices to the first 4 bus of the power supply, the second 5 input transistor, the emitter of which is connected to the second 6 current input and through the second 7 current-stabilizing two-terminal device connected to the first 4 bus of the power source, an auxiliary voltage source 8 connected to the bases of the first 1 and second 5 input transistors, the third 9 and fourth 10 input transistors, the emitters of which are combined and connected to the first 4 bus of power supplies through the third 11 current-stabilizing bipolar, the first 12 current output of the device, matched with the second 13 bus of the power source, to which the collectors of the first 1 and fourth 10 input transistors are connected, the second 12 current output of the device, matched with the second 13 the power supply bus to which the collectors of the second 5 and third 9 input transistors are connected.

. Это не позволяет использовать данную архитектуру в электронных схемах с

, а также при их изготовлении по СВЧ SiGe-технологиям с малыми топологическими нормами, которые не допускают работу транзисторов при

A significant disadvantage of the known SHU is that it is not operational at supply voltages

. This does not allow the use of this architecture in electronic circuits with

, as well as in their manufacture using microwave SiGe technologies with small topological standards that do not allow the operation of transistors at

The main objective of the invention is to reduce the permissible supply voltage of the control unit to 1.5 V while maintaining a sufficiently high level of basic dynamic parameters.

The problem is achieved in that in the broadband current amplifier, figure 1, containing the first 1 input transistor, the emitter of which is connected to the first 2 current input and through the first 3 current-stabilizing two-terminal connected to the first 4 bus of the power source, the second 5 input transistor, the emitter of which connected to the second 6 current input and through the second 7 current-stabilizing two-terminal connected to the first 4 bus power supply, an auxiliary voltage source 8, connected to the bases of the first 1 and second 5 input transistors, t there are 9 and fourth 10 input transistors, the emitters of which are combined and connected to the first 4 bus of power supplies through the third 11 current-stabilizing bipolar, the first 12 current output of the device, matched with the second 13 bus of the power supply, to which the collectors of the first 1 and fourth 10 input transistors are connected , the second 12 current output of the device, coordinated with the second 13 bus of the power source, to which the collectors of the second 5 and third 9 input transistors are connected, new elements and communications are provided - in the circuit in the first 15 and second 16 additional transistors are conducted, the bases of which are connected to the auxiliary voltage source 8, the emitter of the first 15 additional transistor is connected to the first 2 input of the device, the emitter of the second 16 additional transistor is connected to the second 6 input of the device, the collector of the first 15 additional transistor is connected to the base the second 9 input transistor and the first 17 additional load circuit, the collector of the second 16 additional transistor is connected to the base of the fourth 10 input transistor and the second 1 8 chain overload.

Figure 1 presents a diagram of a broadband amplifier prototype.

A diagram of the inventive device corresponding to claim 1 and claim 2 of the claims is shown in figure 2.

Figure 3 presents a diagram of the SHU-prototype (figure 1) in the Cadence computer simulation environment on SiGe models of integrated transistors, and Fig. 4 is a diagram of the inventive broadband current amplifier of Fig. 2.

Figure 5 shows the dependence of the current transfer coefficient K _{i of the} inventive control circuit of Figure 4 on the frequency for various values of the total emitter circuit current I ₁₇ = I _{0 of} transistors Q ₂₄ , Q ₂₅ (i.e., transistors 9 and 10, figure 2 )

Figure 6 shows the frequency dependence of the normalized coefficient of current transfer SHU, figure 4 (K _inormal ), at a current of I ₁₇ = I ₆ = 8 mA, where

To ₀ is the current gain K _i in the medium frequency range.

The broadband current amplifier, figure 2, contains the first 1 input transistor, the emitter of which is connected to the first 2 current input and through the first 3 current-stabilizing two-terminal device is connected to the first 4 bus of the power source, the second 5 input transistor, the emitter of which is connected to the second 6 current input and through the second 7, the current-stabilizing two-terminal is connected to the first 4 bus of the power source, an auxiliary voltage source 8 connected to the bases of the first 1 and second 5 input transistors, the third 9 and fourth 10 input transistors, amy the terriers of which are combined and connected to the first 4 bus of power supplies through the third 11 current-stabilizing bipolar, the first 12 current output of the device, matched with the second 13 bus of the power supply, to which the collectors of the first 1 and fourth 10 input transistors are connected, the second 12 current output of the device, matched with a second 13 bus power supply, to which the collectors of the second 5 and third 9 input transistors are connected. The first 15 and second 16 additional transistors are introduced into the circuit, the bases of which are connected to the auxiliary voltage source 8, the emitter of the first 15 additional transistor is connected to the first 2 input of the device, the emitter of the second 16 additional transistor is connected to the second 6 input of the device, the collector of the first 15 additional transistor is connected with the base of the second 9 input transistor and the first 17 additional load circuit, the collector of the second 16 additional transistor is connected to the base of the fourth 10 input transistor second circuit 18 an additional load. In practical schemes, a common bus of power supplies 4 and 13 can be used as an auxiliary voltage source 8.

In figure 2, in accordance with claim 2, the first 17 and second 18 additional load circuits are made in the form of two series-connected directly biased p-n junctions (21, 22) and (23, 24). In some cases, these may be resistors.

In the particular case, the current outputs of the device 12 and 14 can be connected to the resistors of the main load 19 and 20, converting the output currents into output voltages.

Consider the operation of the SHU of figure 1 and figure 2 on direct current.

определяется тремя прямосмещенными p-n переходами (транзисторы 1, 9 и транзистор, на основе которого выполнен двухполюсник 11) (U_кэ.min.11≈0,7 B, U_эб9≈U_эб1≈0,7 В). Поэтому

. Практически из-за особенностей SiGe транзисторов в ШУ-прототипе

.In the practical implementation of the current-stabilizing two-pole SHU-prototype, figure 1, its minimum supply voltage

is determined by three directly biased pn junctions (transistors 1, 9 and the transistor on the basis of which the two-terminal 11 is made) (U _ke.min.11 ≈0.7 B, U _eb9 ≈U _eb1 ≈0.7 V). therefore

. Practically because of the features of SiGe transistors in the SHU prototype

.

The static mode of the transistors of the claimed circuit SHU, figure 2, is set by two-terminal 3, 7, 11. Due to new connections, the current-stabilizing two-terminal 3, 11, 7 are implemented according to the same (traditional) circuits of current sources on bipolar transistors and have the same minimum voltage U _{ke. min} , at which their transistors do not enter saturation (U _ke.min ≈0.7 B). As a result, the circuit of FIG. 2 may have small negative and positive supply voltages:

- напряжения на p-n переходах 21, 22;Where

- voltage at pn junctions 21, 22;

- минимально возможное напряжение на двухполюснике 3, выполненном на биполярном транзисторе, находящемся в активном режиме;

- the minimum possible voltage at the two-terminal 3, made on a bipolar transistor, which is in active mode;

- напряжение эмиттер-база 15.

- voltage emitter-base 15.

On alternating current SHU, figure 2, works similarly to SHU, figure 1, and has almost the same characteristics (figure 5, figure 6) as the known device - provides signal amplification to a frequency f _in = 43.4 GHz .

The increment of the input current i _inx = 2i _inx.2 SHU, figure 2, is divided into two parts. The first component i _{Bx is} supplied to the emitter, and then the collector of the first 1 input transistor. The second component is transmitted to the collector of transistor 15 and creates a voltage increment on the load circuit 17, which flows to the base of transistor 9. As a result, the emitter and collector currents of transistors 9 and 10 change, which causes the total current increment in the current output circuit 12:

.Where

.

/I₀ можно управлять величиной K_i в схеме ШУ, фиг.2.By changing attitudes

/ I ₀ you can control the value of K _i in the circuit SHU, figure 2.

, что недостижимо в рамках известных технических решений.Thus, the claimed device performs the functions of a microwave current amplifier at supply voltages

, which is unattainable in the framework of well-known technical solutions.

Information sources

1. Barrie Gilbert. A Precise Four-Quadrant Multiplier with Subnanosecond Response / IEEE Journal of Solid-State circuits, vol. sc-3, no.4, December, 1968 .-- S.365-373.

2. US patent No. 2.013.444 NZT.

3. US patent No. 4.277.756.

4. Japanese Patent JP 54-34308 (9815) A21.

5. US patent No. 4.048.577, figure 1.

6. US patent application No. 2009/0219094.

7. Patent WO No. 03/044948, FIG. 2.

8. US patent No. 3.760.194, Fig.2.

9. US Patent No. 3,931.583, Fig.7.

10. US Patent No. 4,528.517.

11. US patent No. 3.843.934, figure 1.

12. US patent No. 6.529.075, figure 1.

13. Patent No. 1454411.

14. US patent No. 4.322.688.

15. US patent No. 6.529.075, figure 1.

16. Japanese Patent Application JP 2004/88498, FIG. 2.

17. Yu.S. Ezhkov. Handbook of amplifier circuitry. Ed. 2nd. M .: Radiosoft, 2002.- P.240, Fig. 8.53.

Claims (2)

1. A broadband current amplifier containing the first (1) input transistor, the emitter of which is connected to the first (2) current input and is connected to the first (4) bus of the power supply through the first (3) current-stabilizing two-terminal device, and the second (5) input transistor, emitter which is connected to the second (6) current input and through the second (7) current-stabilizing two-terminal connected to the first (4) bus of the power source, an auxiliary voltage source (8) connected to the bases of the first (1) and second (5) input transistors, the third (9) and fourth (10) input trans resistors whose emitters are combined and connected to the first (4) bus of the power sources through the third (11) current-stabilizing two-terminal device, the first (12) current output of the device, matched with the second (13) bus of the power source, to which the collectors of the first (1) are connected and the fourth (10) input transistors, the second (12) current output of the device, consistent with the second (13) bus of the power source, to which the collectors of the second (5) and third (9) input transistors are connected, characterized in that the first ( 15) and the second (16) supplement transistors whose bases are connected to an auxiliary voltage source (8), the emitter of the first (15) additional transistor is connected to the first (2) input of the device, the emitter of the second (16) additional transistor is connected to the second (6) input of the device, the collector of the first (15 ) the additional transistor is connected to the base of the second (9) input transistor and the first (17) additional load circuit, the collector of the second (16) additional transistor is connected to the base of the fourth (10) input transistor and the second (18) additional circuit Booting. 2. The broadband current amplifier according to claim 1, characterized in that the first (17) and second (18) additional load circuits are made in the form of series-connected forward biased p-n junctions.

Images