RU189844U1 - The design of the magnetic field transducer based on nanostructures with a giant magnetoresistive effect - Google Patents

Abstract

The invention relates to microelectronics and can be used in the construction of magnetic field sensors and magnetic semiconductor microsystems. The design of a magnetic field transducer based on nanostructures with a giant magnetoresistive effect contains a crystal 1 and four magnetoresistors made on the surface of the crystal connected by an aluminum layer to the Winston bridge with the location of the active arms 2 between two magnetic field 3 hubs of magnetic material and support arms 4, The hubs of the magnetic field 3 are located in the cavities 6, made in the crystal 1. Along the hubs of the magnetic field 3 are placed the screens 5, made of a magnetic material. On the reverse side of the crystal 1, an additional magnet 7 is installed with the location of the magnet poles under the magnetic field 3 hubs. The magnetoresistors are made of multilayer thin-film nanostructures with a giant magnetoresistive effect. The technical result obtained by implementing the inventive utility model is expressed in the account of the formation of an odd output characteristic of the magnetic field transducer while maintaining the sensitivity of the pre photoelectret magnetic field without increasing the power consumption. 1 hp f-ly, 3 ill.

Description

The invention relates to microelectronics and can be used in the construction of magnetic field sensors and magnetic semiconductor microsystems.

Known inventions according to patents of the Russian Federation No. 2216822 (IPC H01L 43/08, publ. November 20, 2003), No. 2483393 (IPC H01L 43/08, BB 1/00, publ. 05.27.2013), which describe magnetoresistive sensors with linear an odd volt-oersted characteristic (VET) of a magnetoresistive magnetic field transducer, containing bridge circuits and magnetic systems. In the sensors described, the magnetoresistive elements are made of strips of metal films with an anisotropic magnetoresistive effect.

Known magnetoresistive magnetic field transducer according to the patent of the Russian Federation for useful model No. 150181 (IPC Н01L 43/00, publ. 10.02.2015), containing a magnetically sensitive element made on the surface of a crystal from magnetoresistors connected in a bridge arrangement with the arrangement of active arms between two hubs The magnetic field of magnetic material, which are placed in the depths made in the crystal, the magnetoresistors are made of multilayer structures with a giant magnetoresistive effect. This technical solution can be used as a prototype. The disadvantage of such magnetic field converters is an even transfer characteristic, which does not allow to determine the direction of the magnetic field strength.

The technical problem addressed by the utility model is to create a magnetic field transducer that provides the ability to determine the direction of the magnetic field strength.

The technical result obtained when implementing the claimed utility model is expressed in providing the possibility of determining the direction of the magnetic field vector by forming an odd output characteristic of the magnetic field transducer while maintaining its sensitivity without increasing power consumption.

To achieve the above technical result in a magnetoresistive magnetic field transducer containing four magnetoresistors made on the surface of a crystal connected by a layer of aluminum to Winston's bridge circuit with the arrangement of active arms between two magnetic field concentrators made of magnetic material, which are placed in the cavities made in the crystal, where The magnetic resistors are made of multilayer thin-film nanostructures with a giant magnetoresistive effect, additionally Magnetic field hubs contain screens made of magnetic material, and the supporting (inactive) arms of the magnetoresistive magnetic field transducer are located under the screens, and a magnet is additionally installed on the back of the crystal so that the magnet poles are located under the magnetic field concentrators.

Installing a magnet on the back of the crystal allows you to shift the working point of the VHE so that you get an odd output characteristic of the magnetic field transducer. In the magnetic field transducer, two active arms are placed in the gap between two magnetic field concentrators, which increase the magnetic field, and the other two arms are located under the screens and are reference. The magnetic field screens, made of magnetic material, placed along the magnetic field hubs above the support arms provide shielding and preservation of the sensitivity of the magnetic field transducer without increasing power consumption.

The invention is illustrated by the following drawings.

FIG. 1 - a schematic representation of the location of the magnetic resistors;

FIG. 2 shows a schematic representation of a converter;

FIG. 3 is a schematic representation of the transducer section A-A.

The design of the magnetic field transducer based on nanostructures with a giant magnetoresistive effect contains a crystal 1 and four magnetoresistors made on the surface of the crystal connected by a layer of aluminum to Winston's bridge circuit with the arrangement of active arms 2 between two magnetic field concentrators 3 of magnetic material and supporting shoulders 4 located under the screens 5 (Fig. 1-3). The magnetic field hubs 3 are placed in the recesses 6, made in the crystal 1. Along the magnetic field hubs 3 are placed screens 5, made of a magnetic material. On the reverse side of the crystal 1, an additional magnet 7 is installed with the location of the magnet poles under the magnetic field 3 hubs. The magnetoresistors are made of multilayer thin-film nanostructures with a giant magnetoresistive effect. The giant magnetoresistive effect is observed in multilayer structures containing nanolayers of ferromagnetic materials (based on Fe, Ni, and Co alloys) alternating with nanolayers of conductive metals Cu, Ag, Au, or alloys based on them.

The active and supporting arms of the magnetic field converter design based on nanostructures with a giant magnetoresistive effect contain four magnetoresistive elements connected by a layer of aluminum to Winston's bridge circuit.

Magnetic field concentrators are made of cold rolled permalloy tape or by electrochemical deposition from a solution. The depths of 6 in the crystal 1 are formed by the method of plasma-chemical etching with a high aspect ratio (Bosch process). The formed indentations 6 allow to place the concentrators of the magnetic field 3 as close as possible to the sensitive part of the magnetically sensitive element.

Multilayer thin film nanostructures used in magnetic field converters with a giant magnetoresistive effect provide an even output characteristic, which means the same change in resistance for any direction of the magnetic field. At the same time, when the magnetic field is applied to all shoulders, the output signal will be zero, therefore, in the claimed magnetic field converter, two active and two support arms are used. Active shoulders are placed in the gap between two magnetic field concentrators, which increase the intensity of the external magnetic field, while the other two supporting arms are located under specialized permalloy screens and are shielded from the magnetic field. To offset the working point of the VHH, a magnet with the location of the magnetic poles under the magnetic field concentrators is placed on the back of the crystal. Thus, an odd output characteristic is generated.

Claims (2)

1. The design of a magnetic field transducer based on nanostructures with a giant magnetoresistive effect, contains four magnetoresistors made on the crystal surface connected by an aluminum layer in Winston's bridge circuit with the arrangement of active arms between two magnetic field concentrators made of magnetically soft material, which are located in the depths made in a crystal, the magnetoresistors are made of nanostructures with a giant magnetoresistive effect, characterized in that it is equipped with screens, made of magnetic material and placed along the magnetic field hubs, under which are the supporting arms of the bridge circuit, and also contains a magnet mounted on the reverse side of the crystal with the location of the magnet poles under the magnetic field hubs. 2. The design according to claim 1, characterized in that the nanostructures contain nanolayers of ferromagnetic materials (based on alloys of Fe, Ni, Co), alternating with nanolayers of conductive materials Cu, Ag, Au or alloys based on them.

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