JP2003215222A - Magneto-resistance effect element sensor - Google Patents
Magneto-resistance effect element sensorInfo
- Publication number
- JP2003215222A JP2003215222A JP2002013997A JP2002013997A JP2003215222A JP 2003215222 A JP2003215222 A JP 2003215222A JP 2002013997 A JP2002013997 A JP 2002013997A JP 2002013997 A JP2002013997 A JP 2002013997A JP 2003215222 A JP2003215222 A JP 2003215222A
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive effect
- magnetoresistive
- multilayer film
- magneto
- effect multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 67
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 31
- 230000005291 magnetic effect Effects 0.000 claims abstract description 30
- 230000005415 magnetization Effects 0.000 claims description 31
- 230000002441 reversible effect Effects 0.000 claims 1
- 230000005389 magnetism Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 58
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＴＭＲ（トンネル
磁気抵抗効果）素子やＧＭＲ（巨大磁気抵抗効果）素子
を用いた磁気抵抗効果素子センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element sensor using a TMR (tunnel magnetoresistive effect) element or a GMR (giant magnetoresistive effect) element.
【０００２】[0002]
【従来の技術】従来より、この種の磁気抵抗効果素子セ
ンサとしては、特開平１０−２５６６２０号公報や特開
２０００−３５４７０号公報に記載のセンサが提案され
ている。2. Description of the Related Art Heretofore, as the magnetoresistive element sensor of this type, there have been proposed the sensors described in JP-A-10-256620 and JP-A-2000-35470.
【０００３】これらのセンサは、少なくとも磁化反転が
ピン止めされたピン止め強磁性層および外部磁界により
磁化が自在に反転するフリー強磁性層からなるとともに
抵抗値が互いに同じである複数個の磁気抵抗効果多層膜
が、並列に配置され、外部磁界の変化を各々の磁気抵抗
効果多層膜の出力を演算することにより検出するように
している。These sensors are composed of at least a pinned ferromagnetic layer whose magnetization reversal is pinned and a free ferromagnetic layer whose magnetization is freely reversed by an external magnetic field, and which have a plurality of magnetoresistive resistances. The effect multilayer films are arranged in parallel, and the change of the external magnetic field is detected by calculating the output of each magnetoresistive effect multilayer film.
【０００４】ここで、各磁気抵抗効果多層膜は互いに、
ピン止め強磁性層の磁化の向きを異ならせており、それ
によって、各々の磁気抵抗効果多層膜の磁気抵抗特性を
異ならせている。そして、外部磁界による各々の磁気抵
抗効果多層膜の抵抗変化を、演算処理（差動処理等）し
て出力することで、温度特性変化分をキャンセルし、磁
界変化による抵抗変化分のみを実質的に精度良く出力で
きる。Here, the magnetoresistive effect multilayer films are mutually
The magnetization directions of the pinned ferromagnetic layers are made different, and thereby the magnetoresistive characteristics of the respective magnetoresistive effect multilayer films are made different. Then, the resistance change of each magnetoresistive multi-layered film due to the external magnetic field is subjected to arithmetic processing (differential processing, etc.) and output to cancel the temperature characteristic change, and substantially only the resistance change due to the magnetic field change. Can be output accurately.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記特開平１
０−２５６６２０号公報にも記載されているように、複
数個の磁気抵抗効果多層膜においてピン止め強磁性層の
磁化の向きの異ならせるには、磁化処理を複数回行った
り、磁気抵抗効果多層膜を別々の基板（ウェハ）上に作
製し、それぞれのウェハを切断して互いに磁化の向きが
異なるように並設して磁気センサを組み付ける必要があ
るため、手間がかかったり、コスト高を招く。However, the above-mentioned Japanese Unexamined Patent Application Publication No.
As described in Japanese Unexamined Patent Publication No. 0-256620, in order to make the magnetization directions of the pinned ferromagnetic layers different among a plurality of magnetoresistive effect multilayer films, a magnetization process is performed a plurality of times or a magnetoresistive effect multilayer film is used. Since it is necessary to assemble the films on different substrates (wafers), cut each wafer and install them side by side so that the directions of magnetization are different from each other, it is time-consuming and costly. .
【０００６】そこで、本発明は上記問題に鑑み、磁気抵
抗効果多層膜が複数個並列に配置され、外部磁界の変化
を各々の磁気抵抗効果多層膜の出力を演算することによ
り検出するようにした磁気抵抗効果素子センサにおい
て、各々の磁気抵抗効果多層膜のピン止め強磁性層の磁
化の向きを同一方向としつつ、適切に磁気を検出できる
ようにすることを目的とする。In view of the above problems, the present invention is arranged so that a plurality of magnetoresistive effect multilayer films are arranged in parallel and a change in the external magnetic field is detected by calculating the output of each magnetoresistive effect multilayer film. An object of the present invention is to enable appropriate detection of magnetism in the magnetoresistive element sensor while keeping the magnetization directions of the pinned ferromagnetic layers of each magnetoresistive multilayer film in the same direction.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明では、少なくとも磁化反転が
ピン止めされたピン止め強磁性層（１３）および外部磁
界により磁化が自在に反転するフリー強磁性層（１１）
からなる磁気抵抗効果多層膜（１０）が複数個並列に配
置され、外部磁界の変化を各々の磁気抵抗効果多層膜の
出力を演算することにより検出するようにした磁気抵抗
効果素子センサにおいて、各々の磁気抵抗効果多層膜の
ピン止め強磁性層は磁化の向きが同一であり、各々の磁
気抵抗効果多層膜は、互いに平面形状が異なっているこ
とを特徴とする。In order to achieve the above object, in the invention described in claim 1, the magnetization is freely reversed by a pinned ferromagnetic layer (13) in which at least magnetization reversal is pinned and an external magnetic field. Free ferromagnetic layer (11)
A plurality of magnetoresistive effect multi-layered films (10) are arranged in parallel, and the change in the external magnetic field is detected by calculating the output of each magnetoresistive effect multi-layered film. The pinned ferromagnetic layers of the magnetoresistive effect multilayer film are characterized in that the directions of magnetization are the same, and the respective magnetoresistive effect multilayer films are different in planar shape from each other.
【０００８】それによれば、各々の磁気抵抗効果多層膜
（１０）は、互いに平面形状が異なっているため、各々
の磁気抵抗効果多層膜のピン止め強磁性層（１３）にお
いて磁化の向きが互いに同一であっても、磁化の向きを
互いに変えた場合と同様に、互いの磁気抵抗効果多層膜
の磁気抵抗特性を変えることができる。According to this, since the magnetoresistive effect multilayer films (10) have different plane shapes from each other, the magnetization directions in the pinned ferromagnetic layers (13) of each magnetoresistive effect multilayer film are mutually different. Even if they are the same, the magnetoresistive characteristics of the magnetoresistive effect multilayer films can be changed in the same manner as when the magnetization directions are changed.
【０００９】そのため、外部磁界による各々の磁気抵抗
効果多層膜の抵抗変化を、演算処理（差動処理等）して
出力することで、温度特性変化分をキャンセルし、磁界
変化による抵抗変化分のみを実質的に精度良く出力でき
る。したがって、各々の磁気抵抗効果多層膜のピン止め
強磁性層の磁化の向きを同一方向としつつ、適切に磁気
を検出することができる。Therefore, the resistance change of each magnetoresistive multi-layered film due to the external magnetic field is output by arithmetic processing (differential processing etc.) to cancel the temperature characteristic change, and only the resistance change due to the magnetic field change. Can be output substantially accurately. Therefore, it is possible to properly detect magnetism while keeping the magnetization directions of the pinned ferromagnetic layers of each magnetoresistive multilayer film in the same direction.
【００１０】ここで、請求項２に記載の発明のように、
各々の磁気抵抗効果多層膜（１０）は、平面形状が四角
形であって当該四角形の縦横比が異なっているものにす
ることができる。Here, as in the invention described in claim 2,
Each of the magnetoresistive effect multilayer films (10) may have a quadrangular planar shape and have different aspect ratios.
【００１１】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示す一
例である。The reference numerals in parentheses of the above-mentioned means are examples showing the correspondence with the concrete means described in the embodiments described later.
【００１２】[0012]
【発明の実施の形態】以下、本発明を図に示す実施形態
について説明する。本実施形態の磁気抵抗効果素子セン
サは基板の上に磁気抵抗効果多層膜が複数個並列に配置
されてなるスピンバルブ素子を用いたものである。図１
は、本発明の実施形態に係る磁気抵抗効果素子センサに
おける１個の磁気抵抗効果多層膜１０の概略断面構成を
示す図である。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention shown in the drawings will be described. The magnetoresistive effect element sensor of this embodiment uses a spin valve element in which a plurality of magnetoresistive effect multilayer films are arranged in parallel on a substrate. Figure 1
FIG. 3 is a diagram showing a schematic cross-sectional structure of one magnetoresistive effect multilayer film 10 in the magnetoresistive effect element sensor according to the embodiment of the present invention.
【００１３】磁気抵抗効果多層膜１０は、表面に絶縁層
２１が形成された基板２０の表面上に、電極層３０、３
１に挟まれた形で形成されている。ここで、基板２０は
ガラス基板やシリコン基板等、非磁性且つ電気絶縁性を
有する材料からなり、絶縁層２１はシリコン酸化膜等か
らなる。また、電極層３０、３１はＣｕやＡｌ等の導体
材料からなる。The magnetoresistive effect multilayer film 10 has electrode layers 30, 3 on the surface of a substrate 20 having an insulating layer 21 formed on the surface thereof.
It is formed so as to be sandwiched between 1. Here, the substrate 20 is made of a nonmagnetic and electrically insulating material such as a glass substrate or a silicon substrate, and the insulating layer 21 is made of a silicon oxide film or the like. The electrode layers 30 and 31 are made of a conductor material such as Cu or Al.
【００１４】磁気抵抗効果多層膜１０は、基板２０側か
ら、フリー強磁性層１１、絶縁薄膜１２、ピン止め強磁
性層１３、反強磁性層１４が積層されてなる。反強磁性
層（以下、ピニング層という）１４はピン止め強磁性層
（以下、ピンド層という）１３の磁化反転をピン止めす
るものであり、フリー強磁性層１１は外部磁界により磁
化が自在に反転するものである。The magnetoresistive effect multilayer film 10 is formed by laminating a free ferromagnetic layer 11, an insulating thin film 12, a pinning ferromagnetic layer 13, and an antiferromagnetic layer 14 from the substrate 20 side. The antiferromagnetic layer (hereinafter, referred to as pinning layer) 14 is for pinning the magnetization reversal of the pinned ferromagnetic layer (hereinafter, referred to as pinned layer) 13, and the free ferromagnetic layer 11 can be magnetized freely by an external magnetic field. It is the one that is reversed.
【００１５】そして、磁気抵抗効果多層膜１０において
は、図１中の矢印Ｙに示すように、ピンド層１３から絶
縁薄膜１２を介してフリー強磁性層１１へトンネル電流
が流れるが、外部磁界が変化した場合、磁化反転をピン
止めされたピンド層１３の磁化の向きは一定であるのに
対し、フリー強磁性層１１の磁化の向きが変化すること
で、磁気抵抗効果多層膜１０の抵抗値が変化し、トンネ
ル電流の大きさが変わるようになっている。In the magnetoresistive effect multilayer film 10, a tunnel current flows from the pinned layer 13 to the free ferromagnetic layer 11 via the insulating thin film 12 as shown by an arrow Y in FIG. When the magnetization direction is changed, the magnetization direction of the pinned layer 13 pinned by the magnetization reversal is constant, whereas the magnetization direction of the free ferromagnetic layer 11 is changed, so that the resistance value of the magnetoresistive effect multilayer film 10 is changed. Changes, and the magnitude of the tunnel current changes.
【００１６】ここで、磁気抵抗効果多層膜１０における
各膜の積層順序は限定されるものではなく、磁気抵抗効
果多層膜１０は、少なくとも磁化反転がピン止めされた
ピン止め強磁性層１３と外部磁界により磁化が自在に反
転するフリー強磁性層１１とを備えたものであって、上
記外部磁界の変化に伴う抵抗値変化によるトンネル電流
の変化が発生するものであればよい。Here, the stacking order of the respective films in the magnetoresistive effect multilayer film 10 is not limited, and the magnetoresistive effect multilayer film 10 has at least the pinned ferromagnetic layer 13 whose magnetization reversal is pinned and the outside. A free ferromagnetic layer 11 whose magnetization can be freely reversed by a magnetic field is provided, and any change in tunnel current due to a change in resistance value due to a change in the external magnetic field may be performed.
【００１７】磁気抵抗効果多層膜１０において、ピニン
グ層１４は反強磁性体からなる薄膜であれば良く、例え
ば、Ｍｎに対してＦｅやＮｉなどが添加された合金等か
ら構成することができる。In the magnetoresistive effect multilayer film 10, the pinning layer 14 may be a thin film made of an antiferromagnetic material, and can be made of, for example, an alloy in which Fe or Ni is added to Mn.
【００１８】ピンド層１３およびフリー強磁性層１１
は、いずれも強磁性体からなる薄膜であれば良く、例え
ば、Ｎｉ−Ｆｅ合金やＣｏ−Ｆｅ合金等から構成するこ
とができる。また、絶縁薄膜１２は、Ａｌ2Ｏ3等の非磁
性体からなる薄膜から構成することができる。Pinned layer 13 and free ferromagnetic layer 11
Are all thin films made of a ferromagnetic material, and can be made of, for example, a Ni—Fe alloy or a Co—Fe alloy. Further, the insulating thin film 12 can be composed of a thin film made of a non-magnetic material such as Al 2 O 3 .
【００１９】このような図１に示す磁気抵抗効果多層膜
１０を、基板２０の表面上に複数個並列に配置し、各々
の磁気抵抗効果多層膜１０のピンド層（ピン止め強磁性
層）１３の磁化の向きを同一とし、且つ、各々の磁気抵
抗効果多層膜１０の平面形状を互いに異ならせたもの
が、本実施形態の磁気抵抗効果素子センサである。各磁
気抵抗効果多層膜１０における上記トンネル電流が流れ
る方向の抵抗値は、初期的に（外部磁界が０のときに）
同一である。A plurality of such magnetoresistive effect multilayer films 10 shown in FIG. 1 are arranged in parallel on the surface of the substrate 20, and the pinned layer (pinned ferromagnetic layer) 13 of each magnetoresistive effect multilayer film 10 is arranged. The magnetoresistive effect element sensor of the present embodiment has the same magnetization direction and different planar shapes of the respective magnetoresistive effect multilayer films 10. The resistance value in the direction in which the tunnel current flows in each magnetoresistive effect multilayer film 10 is initially (when the external magnetic field is 0).
It is the same.
【００２０】ここで、各々の磁気抵抗効果多層膜１０の
平面形状を互いに異ならせ、その磁気抵抗特性を調べた
例を示す。図２に示すように、各々の磁気抵抗効果多層
膜１０の平面形状を四角形とし、その四角形の縦横比
（縦寸法Ｌと横寸法Ｗとの比）Ｌ／Ｗを異ならせた。Here, an example is shown in which the planar shapes of the respective magnetoresistive effect multilayer films 10 are made different from each other and the magnetoresistive characteristics thereof are investigated. As shown in FIG. 2, each magnetoresistive effect multilayer film 10 had a quadrangular planar shape, and the quadrangle had different aspect ratios (ratio between the vertical dimension L and the horizontal dimension W) L / W.
【００２１】図２において、（ａ）は、正方形に近い縦
横比Ｌ／Ｗを有する磁気抵抗効果多層膜１０であるパタ
ーンＡを示し、（ｂ）は、縦横比Ｌ／Ｗの大きい縦長の
磁気抵抗効果多層膜１０であるパターンＢを示す。ま
た、各パターンの磁気抵抗効果多層膜１０におけるピン
ド層１３の磁化の向きは、横寸法Ｗ方向に同一としてい
る。In FIG. 2, (a) shows a pattern A which is a magnetoresistive effect multilayer film 10 having an aspect ratio L / W close to a square, and (b) shows a vertically long magnetic field having a large aspect ratio L / W. A pattern B which is the resistance effect multilayer film 10 is shown. Further, the magnetization direction of the pinned layer 13 in the magnetoresistive effect multilayer film 10 of each pattern is the same in the lateral dimension W direction.
【００２２】この図２において、外部から印加される磁
界（印加磁界）Ｈの印加方向を横寸法Ｗ方向としたと
き、各パターンＡ、Ｂにおける磁気抵抗特性（磁界Ｈと
磁気抵抗効果多層膜１０の抵抗値変化率との関係を示す
特性）を模式的に示したものが、図３である。In FIG. 2, when the application direction of the magnetic field (applied magnetic field) H applied from the outside is the lateral dimension W direction, the magnetoresistive characteristics (the magnetic field H and the magnetoresistive effect multilayer film 10) in the respective patterns A and B are shown. FIG. 3 is a schematic diagram showing the characteristic of (1) showing the relationship with the resistance value change rate.
【００２３】図３に示すように、磁界Ｈの印加方向であ
る横寸法Ｗと磁界Ｈの印加方向とは垂直方向である縦寸
法Ｌとの比、すなわち縦横比Ｌ／Ｗが大きくなるほど、
磁界Ｈに対する抵抗値の変化は小さくなる（感度が低下
する）。これは、反磁界の影響によるものと考えられ
る。As shown in FIG. 3, the ratio of the lateral dimension W, which is the direction in which the magnetic field H is applied, to the vertical dimension L, which is perpendicular to the direction in which the magnetic field H is applied, that is, the larger the aspect ratio L / W,
The change in resistance value with respect to the magnetic field H becomes small (sensitivity decreases). It is considered that this is due to the influence of the demagnetizing field.
【００２４】つまり、フリー強磁性層１１の初期の磁化
の向きは、形状異方性効果によって磁気抵抗効果多層膜
１０の平面形状の長手方向に向きやすい。そのため、図
２において、パターンＡでは印加磁界Ｈの変化に応じて
感度良く（応答良く）フリー強磁性層１１の磁化が反転
するのに対し、パターンＢでは、フリー強磁性層１１の
初期の磁化の向きが磁界Ｈの印加方向と略直交するた
め、感度が低下すると考えられる。That is, the initial magnetization direction of the free ferromagnetic layer 11 tends to be oriented in the longitudinal direction of the planar shape of the magnetoresistive effect multilayer film 10 due to the shape anisotropy effect. Therefore, in FIG. 2, in the pattern A, the magnetization of the free ferromagnetic layer 11 is inverted with good sensitivity (response is good) according to the change of the applied magnetic field H, whereas in the pattern B, the initial magnetization of the free ferromagnetic layer 11 is reversed. Since the direction of is substantially orthogonal to the direction of application of the magnetic field H, it is considered that the sensitivity decreases.
【００２５】よって、本実施形態の磁気抵抗効果素子セ
ンサにおいては、上記図２に示されるような平面形状の
異なるパターンを有する磁気抵抗効果多層膜１０を複数
個組み合わせることで、各々の磁気抵抗効果多層膜１０
のピンド層１３が、その磁化の向きが互いに同一であっ
ても、磁化の向きを互いに変えた場合と同様に、互いの
磁気抵抗効果多層膜１０の磁気抵抗特性を変えることが
できる。Therefore, in the magnetoresistive effect element sensor of the present embodiment, by combining a plurality of magnetoresistive effect multilayer films 10 having patterns having different plane shapes as shown in FIG. Multilayer film 10
Even if the magnetization directions of the pinned layers 13 are the same, the magnetoresistive characteristics of the magnetoresistive effect multilayer films 10 can be changed similarly to the case where the magnetization directions are changed.
【００２６】そのため、外部磁界Ｈによる各々の磁気抵
抗効果多層膜１０の抵抗変化を、演算処理（差動処理
等）して出力することで、温度特性変化分をキャンセル
し、磁界変化による抵抗変化分のみを実質的に精度良く
出力できる。したがって、本実施形態によれば、各々の
磁気抵抗効果多層膜１０のピンド層１３の磁化の向きを
同一方向としつつ、適切に磁気を検出することができ
る。Therefore, the resistance change of each magnetoresistive effect multilayer film 10 due to the external magnetic field H is calculated and output (differential process, etc.) to output the change in temperature characteristic, and the resistance change due to the magnetic field change. Only the minute can be output substantially accurately. Therefore, according to the present embodiment, it is possible to properly detect magnetism while making the magnetization directions of the pinned layers 13 of the respective magnetoresistive effect multilayer films 10 the same direction.
【００２７】図４（ａ）は、平面形状が異なるパターン
を有する磁気抵抗効果多層膜１０を複数個組み合わせた
一例を示す図である。この図４（ａ）に示す例は、上記
図２に示したパターンＡとパターンＢとを基板２０上に
並列に配置して、両パターンＡ、Ｂによりハーフブリッ
ジ回路を構成した場合であり、出力は、パターンＡの多
層膜１０とパターンＢの多層膜１０との中点から行って
いる。FIG. 4A is a diagram showing an example in which a plurality of magnetoresistive effect multilayer films 10 having patterns having different plane shapes are combined. The example shown in FIG. 4A is a case where the pattern A and the pattern B shown in FIG. 2 are arranged in parallel on the substrate 20, and a half bridge circuit is constituted by both patterns A and B. The output is performed from the midpoint between the pattern A multilayer film 10 and the pattern B multilayer film 10.
【００２８】この図４（ａ）に示す例における磁界Ｈの
変化に対する出力変化率を図４（ｂ）に示す。この図４
（ｂ）に示す出力変化率は、上記図３に示したパターン
Ａの抵抗値変化率とパターンＢの抵抗値変化率との差を
とったものに相当する。これによって、温度特性による
変化分をキャンセルした磁気センサとしての機能を果た
すことができる。FIG. 4B shows the output change rate with respect to the change of the magnetic field H in the example shown in FIG. 4A. This Figure 4
The output change rate shown in (b) corresponds to the difference between the resistance change rate of the pattern A and the resistance change rate of the pattern B shown in FIG. As a result, it is possible to fulfill the function of the magnetic sensor in which the variation due to the temperature characteristic is canceled.
【００２９】さらに、図５は、平面形状が異なるパター
ンを有する磁気抵抗効果多層膜１０を複数個組み合わせ
た他の例を示す図である。この図５に示す例は、上記図
２に示したパターンＡを２個およびパターンＢを２個基
板２０上に並列に配置して、これら４個のパターン（磁
気抵抗効果多層膜１０）によってフルブリッジ回路（ホ
ートストンブリッジ）を構成した場合であり、当該ブリ
ッジ回路の中点間の電圧を出力としている。この場合、
上記図４に示すハーフブリッジの場合の２倍程度の出力
が得られる。Further, FIG. 5 is a diagram showing another example in which a plurality of magnetoresistive effect multilayer films 10 having patterns having different planar shapes are combined. In the example shown in FIG. 5, two patterns A shown in FIG. 2 and two patterns B shown in FIG. 2 are arranged in parallel on the substrate 20, and the four patterns (the magnetoresistive effect multilayer film 10) are used to fully form the pattern. This is a case where a bridge circuit (Houghton bridge) is configured, and the voltage between the middle points of the bridge circuit is output. in this case,
An output about twice that in the case of the half bridge shown in FIG. 4 can be obtained.
【００３０】なお、上記実施形態の磁気抵抗効果素子セ
ンサは、ピンド層とフリー強磁性層との間のトンネル電
流を利用したスピンバルブ素子を用いたものであるが、
本発明の磁気抵抗効果素子センサは、スピンバルブ素子
以外のＧＭＲ（巨大磁気抵抗効果）素子を用いたもので
あっても良い。The magnetoresistive element sensor of the above embodiment uses a spin valve element utilizing the tunnel current between the pinned layer and the free ferromagnetic layer.
The magnetoresistive element sensor of the present invention may use a GMR (giant magnetoresistive effect) element other than the spin valve element.
【図１】本発明の実施形態に係る磁気抵抗効果素子セン
サにおける１個の磁気抵抗効果多層膜の概略断面図であ
る。FIG. 1 is a schematic cross-sectional view of one magnetoresistive effect multilayer film in a magnetoresistive effect element sensor according to an embodiment of the present invention.
【図２】各々の磁気抵抗効果多層膜の平面形状を互いに
異ならせたパターン例を示す図である。FIG. 2 is a diagram showing a pattern example in which the planar shapes of the respective magnetoresistive effect multilayer films are different from each other.
【図３】図２に示す各パターン例毎の磁気抵抗特性を模
式的に示す図である。FIG. 3 is a diagram schematically showing a magnetoresistive characteristic for each pattern example shown in FIG.
【図４】（ａ）は、平面形状が異なるパターンを有する
磁気抵抗効果多層膜を複数個組み合わせた一例を示す概
略平面図であり、（ｂ）は（ａ）に示す例における磁界
変化に対する出力変化率を示す図である。FIG. 4A is a schematic plan view showing an example in which a plurality of magnetoresistive effect multilayer films having patterns having different planar shapes are combined, and FIG. 4B is an output with respect to a magnetic field change in the example shown in FIG. It is a figure which shows a rate of change.
【図５】平面形状が異なるパターンを有する磁気抵抗効
果多層膜を複数個組み合わせた他の例を示す概略平面図
である。FIG. 5 is a schematic plan view showing another example in which a plurality of magnetoresistive effect multilayer films having patterns having different planar shapes are combined.
１０…磁気抵抗効果多層膜、１１…フリー強磁性層、１
３…ピン止め強磁性層（ピンド層）。10 ... Magnetoresistive multilayer film, 11 ... Free ferromagnetic layer, 1
3 ... Pinned ferromagnetic layer (pinned layer).
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 康利 愛知県刈谷市昭和町１丁目１番地 株式会 社デンソー内 (72)発明者 上野山 博文 愛知県刈谷市昭和町１丁目１番地 株式会 社デンソー内 Ｆターム(参考） 2G017 AA01 AC04 AD55 BA05 5D034 BA03 BB02 CA03 CA08 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yasutoshi Suzuki 1-1, Showa-cho, Kariya city, Aichi stock market Inside the company DENSO (72) Inventor Hirofumi Uenoyama 1-1, Showa-cho, Kariya city, Aichi stock market Inside the company DENSO F-term (reference) 2G017 AA01 AC04 AD55 BA05 5D034 BA03 BB02 CA03 CA08
Claims (2)
ン止め強磁性層（１３）および外部磁界により磁化が自
在に反転するフリー強磁性層（１１）からなる磁気抵抗
効果多層膜（１０）が複数個並列に配置され、 外部磁界の変化を各々の前記磁気抵抗効果多層膜の出力
を演算することにより検出するようにした磁気抵抗効果
素子センサにおいて、 各々の前記磁気抵抗効果多層膜の前記ピン止め強磁性層
は磁化の向きが同一であり、 各々の前記磁気抵抗効果多層膜は、互いに平面形状が異
なっていることを特徴とする磁気抵抗効果素子センサ。1. A plurality of magnetoresistive effect multilayer films (10) comprising at least a pinned ferromagnetic layer (13) whose magnetization reversal is pinned and a free ferromagnetic layer (11) whose magnetization is freely reversible by an external magnetic field. In a magnetoresistive element sensor arranged in parallel and adapted to detect a change in external magnetic field by calculating the output of each magnetoresistive multilayer, said pinning of each magnetoresistive multilayer The magnetoresistive effect element sensor is characterized in that the ferromagnetic layers have the same direction of magnetization, and the magnetoresistive effect multilayer films have mutually different planar shapes.
は、平面形状が四角形であって当該四角形の縦横比が異
なっていることを特徴とする請求項１に記載の磁気抵抗
効果素子センサ。2. Each of the magnetoresistive effect multilayer films (10)
2. The magnetoresistive element sensor according to claim 1, wherein the two-dimensional shape is a quadrangle, and the quadrangle has a different aspect ratio.
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| JP2002013997A JP2003215222A (en) | 2002-01-23 | 2002-01-23 | Magneto-resistance effect element sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002013997A JP2003215222A (en) | 2002-01-23 | 2002-01-23 | Magneto-resistance effect element sensor |
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|---|---|---|---|
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| JP2008525787A (en) * | 2004-12-28 | 2008-07-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Magnetic sensor with adjustable characteristics |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008525787A (en) * | 2004-12-28 | 2008-07-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Magnetic sensor with adjustable characteristics |
| WO2008012959A1 (en) * | 2006-07-26 | 2008-01-31 | Alps Electric Co., Ltd. | Magnetic sensor |
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| JP2014515470A (en) * | 2011-04-06 | 2014-06-30 | ジャンス マルチディメンショナル テクノロジー シーオー．， エルティーディー | Single chip 2-axis bridge type magnetic field sensor |
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