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NO20020117L - Polykrystallinsk silikon, fremgangsmåte og anordning for fremstilling derav - Google Patents

Polykrystallinsk silikon, fremgangsmåte og anordning for fremstilling derav

Info

Publication number
NO20020117L
NO20020117L NO20020117A NO20020117A NO20020117L NO 20020117 L NO20020117 L NO 20020117L NO 20020117 A NO20020117 A NO 20020117A NO 20020117 A NO20020117 A NO 20020117A NO 20020117 L NO20020117 L NO 20020117L
Authority
NO
Norway
Prior art keywords
making
polycrystalline silicone
polycrystalline
silicone
Prior art date
Application number
NO20020117A
Other languages
English (en)
Other versions
NO333347B1 (no
NO20020117D0 (no
Inventor
Satoru Wakamatsu
Hiroyuki Oda
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of NO20020117D0 publication Critical patent/NO20020117D0/no
Publication of NO20020117L publication Critical patent/NO20020117L/no
Publication of NO333347B1 publication Critical patent/NO333347B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J10/00—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor
    • B01J10/005—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor carried out at high temperatures in the presence of a molten material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/0009—Coils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00094—Jackets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NO20020117A 2000-05-11 2002-01-10 Oppskummet polykrystallinsk silisium, knust produkt derav og fremgangsmate for fremstilling derav NO333347B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000139023 2000-05-11
PCT/JP2001/003865 WO2001085613A1 (fr) 2000-05-11 2001-05-09 Silicium polycristallin et procede et appareil de production correspondants

Publications (3)

Publication Number Publication Date
NO20020117D0 NO20020117D0 (no) 2002-01-10
NO20020117L true NO20020117L (no) 2002-03-06
NO333347B1 NO333347B1 (no) 2013-05-13

Family

ID=18646543

Family Applications (2)

Application Number Title Priority Date Filing Date
NO20020117A NO333347B1 (no) 2000-05-11 2002-01-10 Oppskummet polykrystallinsk silisium, knust produkt derav og fremgangsmate for fremstilling derav
NO20120619A NO20120619L (no) 2000-05-11 2012-05-25 Polykrastallinsk silisium, anordning for fremstilling derav

Family Applications After (1)

Application Number Title Priority Date Filing Date
NO20120619A NO20120619L (no) 2000-05-11 2012-05-25 Polykrastallinsk silisium, anordning for fremstilling derav

Country Status (10)

Country Link
US (1) US6861144B2 (no)
EP (2) EP1285880B1 (no)
KR (1) KR100692444B1 (no)
CN (2) CN100406378C (no)
AU (1) AU770276C (no)
CA (1) CA2377892C (no)
DE (2) DE60142808D1 (no)
ES (2) ES2350591T3 (no)
NO (2) NO333347B1 (no)
WO (1) WO2001085613A1 (no)

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CA2567500C (en) * 2004-05-21 2010-07-13 Tokuyama Corporation Mass of silicon solidified from molten state and process for producing the same
JP4545505B2 (ja) * 2004-07-22 2010-09-15 株式会社トクヤマ シリコンの製造方法
EP1798198B1 (en) * 2004-08-11 2013-12-25 Tokuyama Corporation Silicon manufacturing apparatus
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Also Published As

Publication number Publication date
EP1285880A4 (en) 2004-05-26
CA2377892C (en) 2009-02-03
DE60124246T2 (de) 2007-05-31
EP1285880B1 (en) 2006-11-02
ES2274884T3 (es) 2007-06-01
DE60142808D1 (de) 2010-09-23
WO2001085613A1 (fr) 2001-11-15
AU770276B2 (en) 2004-02-19
AU770276C (en) 2004-09-23
AU5667001A (en) 2001-11-20
CN1224574C (zh) 2005-10-26
NO333347B1 (no) 2013-05-13
EP1719736A1 (en) 2006-11-08
KR100692444B1 (ko) 2007-03-09
CN100406378C (zh) 2008-07-30
US6861144B2 (en) 2005-03-01
CN1699161A (zh) 2005-11-23
CA2377892A1 (en) 2001-11-15
KR20020026526A (ko) 2002-04-10
DE60124246D1 (de) 2006-12-14
EP1285880A1 (en) 2003-02-26
CN1372530A (zh) 2002-10-02
ES2350591T3 (es) 2011-01-25
EP1719736B1 (en) 2010-08-11
NO20020117D0 (no) 2002-01-10
US20020104474A1 (en) 2002-08-08
NO20120619L (no) 2002-03-06

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