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JPS57135708A - Manufacturing of high purity silicon granule - Google Patents

Manufacturing of high purity silicon granule

Info

Publication number
JPS57135708A
JPS57135708A JP1919181A JP1919181A JPS57135708A JP S57135708 A JPS57135708 A JP S57135708A JP 1919181 A JP1919181 A JP 1919181A JP 1919181 A JP1919181 A JP 1919181A JP S57135708 A JPS57135708 A JP S57135708A
Authority
JP
Japan
Prior art keywords
reactor
gas
tube
outer tube
granules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1919181A
Other languages
Japanese (ja)
Inventor
Jinichiro Hasegawa
Kiyoshi Kaneko
Yoshihiro Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP1919181A priority Critical patent/JPS57135708A/en
Publication of JPS57135708A publication Critical patent/JPS57135708A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture the titled granules in a large quantity, at a low cost, without depositing a large amount of Si to the inner wall of the reactor, by providing the center bottom part of a fluidized bed reactor with a double tube nozzle composed of an outer tube and an inner tube extended beyond the end of said outer tube, and supplying chlorosilane gas through the inner tube and H2 gas through the outer tube.
CONSTITUTION: A proper amount of Si seed crystal particles are charged to the reactor 1, and the reactor is supplied with chlorosilane gas through the innr tube 3 of the double tube nozzle and with H2 gas through the outer tube 2 thereof. The chlorosilane gas is made to react with the H2 gas by heating the space in the reactor 1 with a heating device 10 at a specific temperature range, and Si is deposited and grown on the surface of the Si seed crystal particle under fluidized state to obtain high purity Si granules. By adjusting the amount of the Si seed crystal to a proper level, a deposited Si particle layer (stationary particle layer) 5, a layer of Si particles moving downward (a high density layer) 6, and a fluidized Si particle layer 7 in the middle region are formed in the reactor 1. The exhaust gas is exhausted through the port 8, and the grown Si granules are extracted through the outlet 9.
COPYRIGHT: (C)1982,JPO&Japio
JP1919181A 1981-02-12 1981-02-12 Manufacturing of high purity silicon granule Pending JPS57135708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1919181A JPS57135708A (en) 1981-02-12 1981-02-12 Manufacturing of high purity silicon granule

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1919181A JPS57135708A (en) 1981-02-12 1981-02-12 Manufacturing of high purity silicon granule

Publications (1)

Publication Number Publication Date
JPS57135708A true JPS57135708A (en) 1982-08-21

Family

ID=11992444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1919181A Pending JPS57135708A (en) 1981-02-12 1981-02-12 Manufacturing of high purity silicon granule

Country Status (1)

Country Link
JP (1) JPS57135708A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1223145A1 (en) * 2001-01-03 2002-07-17 Korea Research Institute Of Chemical Technology Method and apparatus for preparing polysilicon granules
JP2004071970A (en) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd Method for manufacturing silicon substrate for solar cell and system for manufacturing the same
KR100783667B1 (en) 2006-08-10 2007-12-07 한국화학연구원 Method and apparatus for manufacturing particulate polycrystalline silicon
KR100813131B1 (en) 2006-06-15 2008-03-17 한국화학연구원 Sustainable Manufacturing Method of Polycrystalline Silicon Using Fluidized Bed Reactor
CN100406378C (en) * 2000-05-11 2008-07-30 德山株式会社 Production device of polycrystalline silicon
JP2009502704A (en) * 2005-07-19 2009-01-29 アールイーシー シリコン インコーポレイテッド Silicon jet fluidized bed
US20150218699A1 (en) * 2012-08-29 2015-08-06 The University Of Tokyo Heat exchanger type reaction tube
TWI643683B (en) * 2017-10-19 2018-12-11 Scientech Corporation Fluid providing device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100406378C (en) * 2000-05-11 2008-07-30 德山株式会社 Production device of polycrystalline silicon
EP1223145A1 (en) * 2001-01-03 2002-07-17 Korea Research Institute Of Chemical Technology Method and apparatus for preparing polysilicon granules
JP2004071970A (en) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd Method for manufacturing silicon substrate for solar cell and system for manufacturing the same
JP2009502704A (en) * 2005-07-19 2009-01-29 アールイーシー シリコン インコーポレイテッド Silicon jet fluidized bed
KR100813131B1 (en) 2006-06-15 2008-03-17 한국화학연구원 Sustainable Manufacturing Method of Polycrystalline Silicon Using Fluidized Bed Reactor
KR100783667B1 (en) 2006-08-10 2007-12-07 한국화학연구원 Method and apparatus for manufacturing particulate polycrystalline silicon
US20150218699A1 (en) * 2012-08-29 2015-08-06 The University Of Tokyo Heat exchanger type reaction tube
US10526707B2 (en) * 2012-08-29 2020-01-07 The University Of Tokyo Heat exchanger type reaction tube
TWI643683B (en) * 2017-10-19 2018-12-11 Scientech Corporation Fluid providing device

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