JPS57209810A - Preparation of silicon nitride - Google Patents
Preparation of silicon nitrideInfo
- Publication number
- JPS57209810A JPS57209810A JP9348381A JP9348381A JPS57209810A JP S57209810 A JPS57209810 A JP S57209810A JP 9348381 A JP9348381 A JP 9348381A JP 9348381 A JP9348381 A JP 9348381A JP S57209810 A JPS57209810 A JP S57209810A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- reactive gas
- gas
- ammonia
- silicon hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 229910021529 ammonia Inorganic materials 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- -1 silicon hydride compound Chemical class 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 229910052990 silicon hydride Inorganic materials 0.000 abstract 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
PURPOSE: To prepare high-purity silicon nitride, by bringing a reactive gas flow containing a silicon hydride compound and a specific amount of ammonia into contact with plasma flow, keeping a volume ratio of the reactive gas to the plasma gas calculated at normal temperature and normal pressure in a specific range.
CONSTITUTION: A reactive gas flow containing one or more silicon hydride compounds of monosilane, disilane, trisilane, and tetrasilane, and ammonia in an amount of give 2W200 times moles (especially 10W100 times moles) of Si in the silicon hydride compounds, and, if necessary, a carrier gas is introduced into a plasma furnace. A plasma flow obtained by the radiofrequency induction heating of one or more of argon, hydrogen, and ammonia is previously formed in the plasma furnace. The reactive gas is brought into contact with the plasma flow while a volume ratio of the reactive gas to the plasma gas is kept in a range of 0.5W20 (especially 1W10).
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9348381A JPS57209810A (en) | 1981-06-17 | 1981-06-17 | Preparation of silicon nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9348381A JPS57209810A (en) | 1981-06-17 | 1981-06-17 | Preparation of silicon nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57209810A true JPS57209810A (en) | 1982-12-23 |
Family
ID=14083588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9348381A Pending JPS57209810A (en) | 1981-06-17 | 1981-06-17 | Preparation of silicon nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57209810A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950007A (en) * | 1982-09-13 | 1984-03-22 | Toa Nenryo Kogyo Kk | Precursor for sintered silicon nitride body and manufacture of sintered silicon nitride body using it |
| US6716751B2 (en) | 2001-02-12 | 2004-04-06 | Asm America, Inc. | Dopant precursors and processes |
| US6815007B1 (en) | 2002-03-04 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film |
| US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
| US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US7294582B2 (en) | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
| US7297641B2 (en) | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US7553516B2 (en) | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
| US7629256B2 (en) | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
| US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
| US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| US7674728B2 (en) | 2004-09-03 | 2010-03-09 | Asm America, Inc. | Deposition from liquid sources |
| US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US7732350B2 (en) | 2004-09-22 | 2010-06-08 | Asm International N.V. | Chemical vapor deposition of TiN films in a batch reactor |
| US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
| CN105712305A (en) * | 2014-12-02 | 2016-06-29 | 沈阳鑫劲粉体工程有限责任公司 | New silicon nitride powder synthesis method |
-
1981
- 1981-06-17 JP JP9348381A patent/JPS57209810A/en active Pending
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950007A (en) * | 1982-09-13 | 1984-03-22 | Toa Nenryo Kogyo Kk | Precursor for sintered silicon nitride body and manufacture of sintered silicon nitride body using it |
| US7547615B2 (en) | 2001-02-12 | 2009-06-16 | Asm America, Inc. | Deposition over mixed substrates using trisilane |
| US7285500B2 (en) | 2001-02-12 | 2007-10-23 | Asm America, Inc. | Thin films and methods of making them |
| US6743738B2 (en) | 2001-02-12 | 2004-06-01 | Asm America, Inc. | Dopant precursors and processes |
| US7790556B2 (en) | 2001-02-12 | 2010-09-07 | Asm America, Inc. | Integration of high k gate dielectric |
| US6821825B2 (en) | 2001-02-12 | 2004-11-23 | Asm America, Inc. | Process for deposition of semiconductor films |
| US6900115B2 (en) | 2001-02-12 | 2005-05-31 | Asm America, Inc. | Deposition over mixed substrates |
| US6958253B2 (en) | 2001-02-12 | 2005-10-25 | Asm America, Inc. | Process for deposition of semiconductor films |
| US6962859B2 (en) | 2001-02-12 | 2005-11-08 | Asm America, Inc. | Thin films and method of making them |
| US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
| US6716751B2 (en) | 2001-02-12 | 2004-04-06 | Asm America, Inc. | Dopant precursors and processes |
| US7186582B2 (en) | 2001-02-12 | 2007-03-06 | Asm America, Inc. | Process for deposition of semiconductor films |
| US6716713B2 (en) | 2001-02-12 | 2004-04-06 | Asm America, Inc. | Dopant precursors and ion implantation processes |
| US7273799B2 (en) | 2001-02-12 | 2007-09-25 | Asm America, Inc. | Deposition over mixed substrates |
| US7585752B2 (en) | 2001-02-12 | 2009-09-08 | Asm America, Inc. | Process for deposition of semiconductor films |
| US6815007B1 (en) | 2002-03-04 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film |
| US7294582B2 (en) | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
| US7297641B2 (en) | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US8921205B2 (en) | 2002-08-14 | 2014-12-30 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
| US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
| US7674728B2 (en) | 2004-09-03 | 2010-03-09 | Asm America, Inc. | Deposition from liquid sources |
| US7921805B2 (en) | 2004-09-03 | 2011-04-12 | Asm America, Inc. | Deposition from liquid sources |
| US7732350B2 (en) | 2004-09-22 | 2010-06-08 | Asm International N.V. | Chemical vapor deposition of TiN films in a batch reactor |
| US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
| US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| US7553516B2 (en) | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US7629256B2 (en) | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
| US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
| US8203179B2 (en) | 2007-08-17 | 2012-06-19 | Micron Technology, Inc. | Device having complex oxide nanodots |
| US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| CN105712305A (en) * | 2014-12-02 | 2016-06-29 | 沈阳鑫劲粉体工程有限责任公司 | New silicon nitride powder synthesis method |
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