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NL7512828A - SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME. - Google Patents

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME.

Info

Publication number
NL7512828A
NL7512828A NL7512828A NL7512828A NL7512828A NL 7512828 A NL7512828 A NL 7512828A NL 7512828 A NL7512828 A NL 7512828A NL 7512828 A NL7512828 A NL 7512828A NL 7512828 A NL7512828 A NL 7512828A
Authority
NL
Netherlands
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Application number
NL7512828A
Other languages
Dutch (nl)
Other versions
NL176721B (en
NL176721C (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7512828A publication Critical patent/NL7512828A/en
Publication of NL176721B publication Critical patent/NL176721B/en
Application granted granted Critical
Publication of NL176721C publication Critical patent/NL176721C/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
NLAANVRAGE7512828,A 1974-11-01 1975-10-31 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE NL176721C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (en) 1974-11-01 1974-11-01

Publications (3)

Publication Number Publication Date
NL7512828A true NL7512828A (en) 1976-05-04
NL176721B NL176721B (en) 1984-12-17
NL176721C NL176721C (en) 1985-05-17

Family

ID=14913063

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7512828,A NL176721C (en) 1974-11-01 1975-10-31 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE

Country Status (3)

Country Link
JP (1) JPS5528232B2 (en)
DE (1) DE2548903C2 (en)
NL (1) NL176721C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122374A (en) * 1977-03-31 1978-10-25 Fujitsu Ltd Manufacture for double gate consitution semiconductor device
DE2743422A1 (en) * 1977-09-27 1979-03-29 Siemens Ag Word-wise erasable, non-volatile memory in floating gate technology
DE2803431A1 (en) * 1978-01-26 1979-08-02 Siemens Ag METHOD OF MANUFACTURING MOS TRANSISTORS
DE2814052A1 (en) * 1978-03-31 1979-10-11 Siemens Ag PROCESS FOR THE PRODUCTION OF OXIDE INSULATION LAYERS FOR FLOATING GATE MOS TRANSISTORS, OR MOS TRANSISTORS WITH AT LEAST TWO POLYSILICIUM ELECTRODES

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
JPS5330310B2 (en) * 1972-09-13 1978-08-25

Also Published As

Publication number Publication date
DE2548903A1 (en) 1976-05-06
NL176721B (en) 1984-12-17
JPS5528232B2 (en) 1980-07-26
JPS5152281A (en) 1976-05-08
DE2548903C2 (en) 1984-08-30
NL176721C (en) 1985-05-17

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 951031