NL176721C - METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE - Google Patents
METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICEInfo
- Publication number
- NL176721C NL176721C NLAANVRAGE7512828,A NL7512828A NL176721C NL 176721 C NL176721 C NL 176721C NL 7512828 A NL7512828 A NL 7512828A NL 176721 C NL176721 C NL 176721C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12555474A JPS5528232B2 (en) | 1974-11-01 | 1974-11-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7512828A NL7512828A (en) | 1976-05-04 |
NL176721B NL176721B (en) | 1984-12-17 |
NL176721C true NL176721C (en) | 1985-05-17 |
Family
ID=14913063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7512828,A NL176721C (en) | 1974-11-01 | 1975-10-31 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5528232B2 (en) |
DE (1) | DE2548903C2 (en) |
NL (1) | NL176721C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53122374A (en) * | 1977-03-31 | 1978-10-25 | Fujitsu Ltd | Manufacture for double gate consitution semiconductor device |
DE2743422A1 (en) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Word-wise erasable, non-volatile memory in floating gate technology |
DE2803431A1 (en) * | 1978-01-26 | 1979-08-02 | Siemens Ag | METHOD OF MANUFACTURING MOS TRANSISTORS |
DE2814052A1 (en) * | 1978-03-31 | 1979-10-11 | Siemens Ag | PROCESS FOR THE PRODUCTION OF OXIDE INSULATION LAYERS FOR FLOATING GATE MOS TRANSISTORS, OR MOS TRANSISTORS WITH AT LEAST TWO POLYSILICIUM ELECTRODES |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
GB1363190A (en) * | 1972-05-31 | 1974-08-14 | Plessey Co Ltd | Semiconductor memory device |
JPS5330310B2 (en) * | 1972-09-13 | 1978-08-25 |
-
1974
- 1974-11-01 JP JP12555474A patent/JPS5528232B2/ja not_active Expired
-
1975
- 1975-10-31 NL NLAANVRAGE7512828,A patent/NL176721C/en not_active IP Right Cessation
- 1975-10-31 DE DE2548903A patent/DE2548903C2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2548903A1 (en) | 1976-05-06 |
NL176721B (en) | 1984-12-17 |
JPS5528232B2 (en) | 1980-07-26 |
JPS5152281A (en) | 1976-05-08 |
NL7512828A (en) | 1976-05-04 |
DE2548903C2 (en) | 1984-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 951031 |