NL191913C - Dubbel gediffundeerde mosfet cel. - Google Patents

Dubbel gediffundeerde mosfet cel.

Info

Publication number: NL191913C
Authority: NL; Netherlands
Prior art keywords: double diffused; mosfet cell; diffused mosfet; cell; double
Prior art date: 1988-06-27

Application number

NL8901599A

Other languages

English (en)

Other versions

NL8901599A (nl

NL191913B (nl

Original Assignee

Hyundai Electronics Ind

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-06-27

Filing date

1989-06-23

Publication date

1996-10-04

1989-06-23 Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind

1990-01-16 Publication of NL8901599A publication Critical patent/NL8901599A/nl

1996-06-03 Publication of NL191913B publication Critical patent/NL191913B/nl

1996-10-04 Application granted granted Critical

1996-10-04 Publication of NL191913C publication Critical patent/NL191913C/nl

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

NL8901599A 1988-06-27 1989-06-23 Dubbel gediffundeerde mosfet cel. NL191913C (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR1019880007747A KR910004318B1 (ko)	1988-06-27	1988-06-27	수직형 d mos 트랜지스터의 셀
KR880007747		1988-06-27

Publications (3)

Publication Number	Publication Date
NL8901599A NL8901599A (nl)	1990-01-16
NL191913B NL191913B (nl)	1996-06-03
NL191913C true NL191913C (nl)	1996-10-04

Family

ID=19275535

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8901599A NL191913C (nl)	1988-06-27	1989-06-23	Dubbel gediffundeerde mosfet cel.

Country Status (6)

Country	Link
US (1)	US4982249A (nl)
JP (1)	JPH0671088B2 (nl)
KR (1)	KR910004318B1 (nl)
DE (1)	DE3920010C2 (nl)
IT (1)	IT1230901B (nl)
NL (1)	NL191913C (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5192989A (en) *	1989-11-28	1993-03-09	Nissan Motor Co., Ltd.	Lateral dmos fet device with reduced on resistance
US5139621A (en) *	1990-06-11	1992-08-18	Mobil Oil Corporation	Azeotropic distillation process for recovery of diamondoid compounds from hydrocarbon streams
JP2807114B2 (ja) *	1990-12-21	1998-10-08	シリコニックス・インコーポレイテッド	シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路ｍｏｓｆｅｔセルの形成方法
US5404040A (en) *	1990-12-21	1995-04-04	Siliconix Incorporated	Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) *	1990-12-21	1994-04-19	Siliconix Incorporated	Low on-resistance power MOS technology
US5323036A (en) *	1992-01-21	1994-06-21	Harris Corporation	Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US5763914A (en) *	1997-07-16	1998-06-09	Megamos Corporation	Cell topology for power transistors with increased packing density
US9484451B2 (en) *	2007-10-05	2016-11-01	Vishay-Siliconix	MOSFET active area and edge termination area charge balance
US9431249B2 (en)	2011-12-01	2016-08-30	Vishay-Siliconix	Edge termination for super junction MOSFET devices
US9614043B2 (en)	2012-02-09	2017-04-04	Vishay-Siliconix	MOSFET termination trench
US9842911B2 (en)	2012-05-30	2017-12-12	Vishay-Siliconix	Adaptive charge balanced edge termination
US9508596B2 (en)	2014-06-20	2016-11-29	Vishay-Siliconix	Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en)	2014-06-23	2018-02-06	Vishay-Siliconix	Modulated super junction power MOSFET devices
KR102098996B1 (ko)	2014-08-19	2020-04-08	비쉐이-실리코닉스	초접합 금속 산화물 반도체 전계 효과 트랜지스터

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US4705759B1 (en) *	1978-10-13	1995-02-14	Int Rectifier Corp	High power mosfet with low on-resistance and high breakdown voltage
US4680853A (en) *	1980-08-18	1987-07-21	International Rectifier Corporation	Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302B1 (en) *	1980-08-18	1998-02-03	Int Rectifier Corp	Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
FR2531572A1 (fr) *	1982-08-09	1984-02-10	Radiotechnique Compelec	Dispositif mos a structure plane multicellulaire
FR2537780A1 (fr) *	1982-12-08	1984-06-15	Radiotechnique Compelec	Dispositif mos fet de puissance a structure plane multicellulaire
JPS60130508A (ja) *	1983-12-20	1985-07-12	Lion Corp	毛髪化粧料組成物
DE3688057T2 (de) *	1986-01-10	1993-10-07	Gen Electric	Halbleitervorrichtung und Methode zur Herstellung.
US4823176A (en) *	1987-04-03	1989-04-18	General Electric Company	Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

1988
- 1988-06-27 KR KR1019880007747A patent/KR910004318B1/ko not_active IP Right Cessation
1989
- 1989-06-09 US US07/364,262 patent/US4982249A/en not_active Expired - Lifetime
- 1989-06-20 DE DE3920010A patent/DE3920010C2/de not_active Expired - Fee Related
- 1989-06-22 JP JP1158467A patent/JPH0671088B2/ja not_active Expired - Fee Related
- 1989-06-22 IT IT8920962A patent/IT1230901B/it active
- 1989-06-23 NL NL8901599A patent/NL191913C/nl not_active IP Right Cessation

Also Published As

Publication number	Publication date
IT1230901B (it)	1991-11-08
JPH0671088B2 (ja)	1994-09-07
IT8920962A0 (it)	1989-06-22
NL8901599A (nl)	1990-01-16
JPH0298172A (ja)	1990-04-10
US4982249A (en)	1991-01-01
DE3920010A1 (de)	1989-12-28
NL191913B (nl)	1996-06-03
DE3920010C2 (de)	1993-10-07
KR900001039A (ko)	1990-01-31
KR910004318B1 (ko)	1991-06-25

Publication	Publication Date	Title
DE69015121D1 (de)	1995-01-26	Kraftmessdose.
DE68923061D1 (de)	1995-07-20	Sonnenzelle.
NO891272D0 (no)	1989-03-22	Hydrogen.
FI896179A0 (fi)	1989-12-21	Lagerbestaendiga, synnerligen poroesa, kalorifattiga livsmedelsprodukter.
NO893805D0 (no)	1989-09-25	Brenselcelle.
FI875566A (fi)	1988-06-20	Elektrolytisk cell foer alkalimetallhydrosulfitloesningar.
FI883806A0 (fi)	1988-08-17	Spirallindat roer.
IT8522521A0 (it)	1985-10-17	Lavoro, con porzioni separate. sedia, in particolare sedia da
NO893484L (no)	1990-03-01	Brenselcelle.
DE58900841D1 (de)	1992-04-02	Mikrodurchflusszelle.
NL191913C (nl)	1996-10-04	Dubbel gediffundeerde mosfet cel.
FI905812A0 (fi)	1990-11-26	Interleukin-1 inhibitorer.
DE58902894D1 (de)	1993-01-14	Polymermischungen.
FI891201A (fi)	1989-09-15	Elektrokemisk cell.
FI883527A0 (fi)	1988-07-27	Elektrolytisk cell.
FI893497A (fi)	1990-01-21	Elektrokemisk cell med dubbelverkande elektrod.
DE68907001D1 (de)	1993-07-15	Polysilicium mit vermindertem wasserstoffgehalt.
NL192550B (nl)	1997-05-01	Brandstofcel.
IT8747783A0 (it)	1987-03-27	Fiammenghi e domenighetti fiammenghi - via quattro fontane, 31 roma
DE68909534D1 (de)	1993-11-04	Biokonversion.
FI893785A (fi)	1990-02-13	Invaendigt oxiderade roer.
DE3750872D1 (de)	1995-01-26	Nichtflüchtige speicherzelle.
FI891464A (fi)	1989-10-01	Hastighetsenhet foer inverter.
DE68915211D1 (de)	1994-06-16	Standardzelle.
FI890172A0 (fi)	1989-01-13	Produktion av klordioxid i en elektrolytisk cell.

Legal Events

Date	Code	Title	Description
1991-03-01	BA	A request for search or an international-type search has been filed
1991-07-01	BB	A search report has been drawn up
1991-10-01	BC	A request for examination has been filed
2008-03-03	V1	Lapsed because of non-payment of the annual fee	Effective date: 20080101