IT1230901B - Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet). - Google Patents

Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet).

Info

Publication number: IT1230901B
Authority: IT; Italy
Prior art keywords: mosfet; effect transistor; gate field; transistor cell; double diffusion
Prior art date: 1988-06-27

Application number

IT8920962A

Other languages

English (en)

Other versions

IT8920962A0 (it

Inventor

Jong Oh Kim

Jin Hyung Kim

Original Assignee

Hyundai Electronics Ind

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-06-27

Filing date

1989-06-22

Publication date

1991-11-08

1989-06-22 Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind

1989-06-22 Publication of IT8920962A0 publication Critical patent/IT8920962A0/it

1991-11-08 Application granted granted Critical

1991-11-08 Publication of IT1230901B publication Critical patent/IT1230901B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

IT8920962A 1988-06-27 1989-06-22 Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet). IT1230901B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019880007747A KR910004318B1 (ko)	1988-06-27	1988-06-27	수직형 d mos 트랜지스터의 셀

Publications (2)

Publication Number	Publication Date
IT8920962A0 IT8920962A0 (it)	1989-06-22
IT1230901B true IT1230901B (it)	1991-11-08

Family

ID=19275535

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT8920962A IT1230901B (it)	1988-06-27	1989-06-22	Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet).

Country Status (6)

Country	Link
US (1)	US4982249A (it)
JP (1)	JPH0671088B2 (it)
KR (1)	KR910004318B1 (it)
DE (1)	DE3920010C2 (it)
IT (1)	IT1230901B (it)
NL (1)	NL191913C (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5192989A (en) *	1989-11-28	1993-03-09	Nissan Motor Co., Ltd.	Lateral dmos fet device with reduced on resistance
US5139621A (en) *	1990-06-11	1992-08-18	Mobil Oil Corporation	Azeotropic distillation process for recovery of diamondoid compounds from hydrocarbon streams
JP2807114B2 (ja) *	1990-12-21	1998-10-08	シリコニックス・インコーポレイテッド	シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路ｍｏｓｆｅｔセルの形成方法
US5404040A (en) *	1990-12-21	1995-04-04	Siliconix Incorporated	Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) *	1990-12-21	1994-04-19	Siliconix Incorporated	Low on-resistance power MOS technology
US5323036A (en) *	1992-01-21	1994-06-21	Harris Corporation	Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US5763914A (en) *	1997-07-16	1998-06-09	Megamos Corporation	Cell topology for power transistors with increased packing density
US9484451B2 (en) *	2007-10-05	2016-11-01	Vishay-Siliconix	MOSFET active area and edge termination area charge balance
US9431249B2 (en)	2011-12-01	2016-08-30	Vishay-Siliconix	Edge termination for super junction MOSFET devices
US9614043B2 (en)	2012-02-09	2017-04-04	Vishay-Siliconix	MOSFET termination trench
US9842911B2 (en)	2012-05-30	2017-12-12	Vishay-Siliconix	Adaptive charge balanced edge termination
US9508596B2 (en)	2014-06-20	2016-11-29	Vishay-Siliconix	Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en)	2014-06-23	2018-02-06	Vishay-Siliconix	Modulated super junction power MOSFET devices
KR102098996B1 (ko)	2014-08-19	2020-04-08	비쉐이-실리코닉스	초접합 금속 산화물 반도체 전계 효과 트랜지스터

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US4705759B1 (en) *	1978-10-13	1995-02-14	Int Rectifier Corp	High power mosfet with low on-resistance and high breakdown voltage
US4680853A (en) *	1980-08-18	1987-07-21	International Rectifier Corporation	Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302B1 (en) *	1980-08-18	1998-02-03	Int Rectifier Corp	Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
FR2531572A1 (fr) *	1982-08-09	1984-02-10	Radiotechnique Compelec	Dispositif mos a structure plane multicellulaire
FR2537780A1 (fr) *	1982-12-08	1984-06-15	Radiotechnique Compelec	Dispositif mos fet de puissance a structure plane multicellulaire
JPS60130508A (ja) *	1983-12-20	1985-07-12	Lion Corp	毛髪化粧料組成物
DE3688057T2 (de) *	1986-01-10	1993-10-07	Gen Electric	Halbleitervorrichtung und Methode zur Herstellung.
US4823176A (en) *	1987-04-03	1989-04-18	General Electric Company	Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

1988
- 1988-06-27 KR KR1019880007747A patent/KR910004318B1/ko not_active IP Right Cessation
1989
- 1989-06-09 US US07/364,262 patent/US4982249A/en not_active Expired - Lifetime
- 1989-06-20 DE DE3920010A patent/DE3920010C2/de not_active Expired - Fee Related
- 1989-06-22 JP JP1158467A patent/JPH0671088B2/ja not_active Expired - Fee Related
- 1989-06-22 IT IT8920962A patent/IT1230901B/it active
- 1989-06-23 NL NL8901599A patent/NL191913C/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPH0671088B2 (ja)	1994-09-07
IT8920962A0 (it)	1989-06-22
NL191913C (nl)	1996-10-04
NL8901599A (nl)	1990-01-16
JPH0298172A (ja)	1990-04-10
US4982249A (en)	1991-01-01
DE3920010A1 (de)	1989-12-28
NL191913B (nl)	1996-06-03
DE3920010C2 (de)	1993-10-07
KR900001039A (ko)	1990-01-31
KR910004318B1 (ko)	1991-06-25

Publication	Publication Date	Title
DE3679971D1 (de)	1991-08-01	Modulationsdotierter feldeffekttransistor.
DE68909973D1 (de)	1993-11-25	Dünnfilmtransistor.
DE69425070D1 (de)	2000-08-03	Diamantförmige gate-zelle für mos-transistormatrix
DE3768854D1 (de)	1991-05-02	Lateraltransistor.
DE68925873D1 (de)	1996-04-11	Transistor mit schwebendem Gate
DE69109495D1 (de)	1995-06-08	Einzeltransistor-eeprom-speicherzelle.
DE3872828D1 (de)	1992-08-20	Halbleiterkristallplaettchen-stapel.
IT1230901B (it)	1991-11-08	Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet).
DE3684400D1 (de)	1992-04-23	Verteilte feldeffekttransistorstruktur.
EP0588300A3 (en)	1994-10-12	Semiconductor transistor.
DE3788525D1 (de)	1994-02-03	Feldeffekttransistoranordnungen.
DE69009298D1 (de)	1994-07-07	Hochspannungs-Dünnschichttransistor mit zweitem Gate.
DE69223500D1 (de)	1998-01-22	Gate-Array-Basiszelle
DE3689433D1 (de)	1994-02-03	Feldeffekttransistor.
DE3586385D1 (de)	1992-08-27	Integrierte gate-matrixstruktur.
DE3751098D1 (de)	1995-04-06	Feldeffekttransistor.
DE3785249D1 (de)	1993-05-13	Duennfilm-feldeffekttransistor.
DE3782748D1 (de)	1993-01-07	Feldeffekttransistor mit isoliertem gate.
DE3887716D1 (de)	1994-03-24	Transistor.
KR900015357A (ko)	1990-10-26	절연 게이트 트랜지스터용 mos 파일럿 구조체
DE69317562D1 (de)	1998-04-23	Halbleiteranordnung mit doppelgate.
EP0377126A3 (en)	1990-07-25	Schottky gate field-effect semiconductor device
DE3583064D1 (de)	1991-07-11	Supraleitender transistor.
KR890007435A (ko)	1989-06-19	쇼트키이(Schottky)게이트 전계효과트랜지스터
DE3686709D1 (de)	1992-10-15	Gattermatrix.

Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19970628