NL178572B - Werkwijze voor het vloeimiddelvrij solderen van aluminium materialen. - Google Patents
Werkwijze voor het vloeimiddelvrij solderen van aluminium materialen.Info
- Publication number
- NL178572B NL178572B NLAANVRAGE7211342,A NL178572DA NL178572B NL 178572 B NL178572 B NL 178572B NL 178572D A NL178572D A NL 178572DA NL 178572 B NL178572 B NL 178572B
- Authority
- NL
- Netherlands
- Prior art keywords
- fluid
- aluminum materials
- free soldering
- soldering
- free
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005476 soldering Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/0431—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES28971A DE974580C (de) | 1952-06-19 | 1952-06-19 | Verfahren zur Herstellung von Selengleichrichterplatten |
Publications (1)
Publication Number | Publication Date |
---|---|
NL178572B true NL178572B (nl) |
Family
ID=7479617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7211342,A NL178572B (nl) | 1952-06-19 | Werkwijze voor het vloeimiddelvrij solderen van aluminium materialen. |
Country Status (6)
Country | Link |
---|---|
US (1) | US2914837A (de) |
CH (1) | CH316268A (de) |
DE (1) | DE974580C (de) |
FR (1) | FR1078229A (de) |
GB (1) | GB727949A (de) |
NL (1) | NL178572B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3052572A (en) * | 1959-09-21 | 1962-09-04 | Mc Graw Edison Co | Selenium rectifiers and their method of manufacture |
GB1115933A (en) * | 1965-08-27 | 1968-06-06 | Noranda Mines Ltd | Single crystal selenium rectifier |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT131780B (de) * | 1930-08-07 | 1933-02-10 | Erwin Falkenthal | Lichtelektrische Zelle und Verfahren zur Herstellung derselben. |
NL49864C (de) * | 1935-06-22 | |||
AT155712B (de) * | 1936-06-20 | 1939-03-10 | Aeg | Verfahren zur Herstellung von Halbleiterüberzügen. |
NL46218C (de) * | 1936-06-20 | 1900-01-01 | ||
DE742935C (de) * | 1939-07-01 | 1943-12-15 | Siemens Ag | Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter |
US2337329A (en) * | 1941-12-18 | 1943-12-21 | Gen Electric | Treatment of surfaces |
US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
US2334554A (en) * | 1942-06-22 | 1943-11-16 | Gen Electric | Method of producing blocking layer devices |
NL136384B (de) * | 1943-05-01 | 1900-01-01 | ||
US2662832A (en) * | 1950-04-08 | 1953-12-15 | Haloid Co | Process of producing an electrophotographic plate |
BE515174A (de) * | 1951-10-29 |
-
0
- NL NLAANVRAGE7211342,A patent/NL178572B/xx unknown
-
1952
- 1952-06-19 DE DES28971A patent/DE974580C/de not_active Expired
-
1953
- 1953-05-28 GB GB14934/53A patent/GB727949A/en not_active Expired
- 1953-06-04 CH CH316268D patent/CH316268A/de unknown
- 1953-06-10 US US360808A patent/US2914837A/en not_active Expired - Lifetime
- 1953-06-10 FR FR1078229D patent/FR1078229A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2914837A (en) | 1959-12-01 |
FR1078229A (fr) | 1954-11-16 |
CH316268A (de) | 1956-09-30 |
GB727949A (en) | 1955-04-13 |
DE974580C (de) | 1961-02-16 |
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