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NL1012960C2 - Inductor en werkwijze voor het vervaardigen daarvan. - Google Patents

Inductor en werkwijze voor het vervaardigen daarvan. Download PDF

Info

Publication number
NL1012960C2
NL1012960C2 NL1012960A NL1012960A NL1012960C2 NL 1012960 C2 NL1012960 C2 NL 1012960C2 NL 1012960 A NL1012960 A NL 1012960A NL 1012960 A NL1012960 A NL 1012960A NL 1012960 C2 NL1012960 C2 NL 1012960C2
Authority
NL
Netherlands
Prior art keywords
substrate
conductivity type
inductor
conductive layer
doped region
Prior art date
Application number
NL1012960A
Other languages
English (en)
Dutch (nl)
Inventor
Jou Chewnpu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB9919091A priority Critical patent/GB2353139B/en
Priority to US09/375,688 priority patent/US6242791B1/en
Priority to US09/375,672 priority patent/US6201289B1/en
Priority to DE19940035A priority patent/DE19940035A1/de
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to NL1012960A priority patent/NL1012960C2/nl
Priority to FR9911186A priority patent/FR2798219B1/fr
Priority to FR9914756A priority patent/FR2798220B1/fr
Application granted granted Critical
Publication of NL1012960C2 publication Critical patent/NL1012960C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/957—Making metal-insulator-metal device

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
NL1012960A 1999-08-12 1999-09-02 Inductor en werkwijze voor het vervaardigen daarvan. NL1012960C2 (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB9919091A GB2353139B (en) 1999-08-12 1999-08-12 Inductor and method of manufacturing the same
US09/375,688 US6242791B1 (en) 1999-08-12 1999-08-17 Semiconductor inductor
US09/375,672 US6201289B1 (en) 1999-08-12 1999-08-17 Method of manufacturing an inductor
DE19940035A DE19940035A1 (de) 1999-08-12 1999-08-24 Spule und Verfahren zum Herstellen einer Spule
NL1012960A NL1012960C2 (nl) 1999-08-12 1999-09-02 Inductor en werkwijze voor het vervaardigen daarvan.
FR9911186A FR2798219B1 (fr) 1999-08-12 1999-09-07 Inductance et procede de fabrication
FR9914756A FR2798220B1 (fr) 1999-08-12 1999-11-23 Inductance et procede de fabrication

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
GB9919091 1999-08-12
GB9919091A GB2353139B (en) 1999-08-12 1999-08-12 Inductor and method of manufacturing the same
US09/375,688 US6242791B1 (en) 1999-08-12 1999-08-17 Semiconductor inductor
US09/375,672 US6201289B1 (en) 1999-08-12 1999-08-17 Method of manufacturing an inductor
US37568899 1999-08-17
US37567299 1999-08-17
DE19940035A DE19940035A1 (de) 1999-08-12 1999-08-24 Spule und Verfahren zum Herstellen einer Spule
DE19940035 1999-08-24
NL1012960 1999-09-02
NL1012960A NL1012960C2 (nl) 1999-08-12 1999-09-02 Inductor en werkwijze voor het vervaardigen daarvan.
FR9911186 1999-09-07
FR9911186A FR2798219B1 (fr) 1999-08-12 1999-09-07 Inductance et procede de fabrication
FR9914756A FR2798220B1 (fr) 1999-08-12 1999-11-23 Inductance et procede de fabrication
FR9914756 1999-11-23

Publications (1)

Publication Number Publication Date
NL1012960C2 true NL1012960C2 (nl) 2001-03-05

Family

ID=27561767

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1012960A NL1012960C2 (nl) 1999-08-12 1999-09-02 Inductor en werkwijze voor het vervaardigen daarvan.

Country Status (5)

Country Link
US (2) US6201289B1 (fr)
DE (1) DE19940035A1 (fr)
FR (2) FR2798219B1 (fr)
GB (1) GB2353139B (fr)
NL (1) NL1012960C2 (fr)

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US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
US8421158B2 (en) * 1998-12-21 2013-04-16 Megica Corporation Chip structure with a passive device and method for forming the same
US7531417B2 (en) * 1998-12-21 2009-05-12 Megica Corporation High performance system-on-chip passive device using post passivation process
US8178435B2 (en) 1998-12-21 2012-05-15 Megica Corporation High performance system-on-chip inductor using post passivation process
US6356183B1 (en) * 1999-08-17 2002-03-12 United Microelectronics Corp. Method of manufacturing an inductor
SG98398A1 (en) 2000-05-25 2003-09-19 Inst Of Microelectronics Integrated circuit inductor
US6441442B1 (en) * 2000-05-30 2002-08-27 Programmable Silicon Solutions Integrated inductive circuits
US6917095B1 (en) 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
US6420773B1 (en) * 2000-10-04 2002-07-16 Winbond Electronics Corp. Multi-level spiral inductor structure having high inductance (L) and high quality factor (Q)
US6373121B1 (en) * 2001-03-23 2002-04-16 United Microelectronics Corp. Silicon chip built-in inductor structure
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6833781B1 (en) 2002-06-27 2004-12-21 National Semiconductor Corporation High Q inductor in multi-level interconnect
US7492463B2 (en) * 2004-04-15 2009-02-17 Davidson Instruments Inc. Method and apparatus for continuous readout of Fabry-Perot fiber optic sensor
US20050251234A1 (en) 2004-05-07 2005-11-10 John Kanzius Systems and methods for RF-induced hyperthermia using biological cells and nanoparticles as RF enhancer carriers
US8008775B2 (en) 2004-09-09 2011-08-30 Megica Corporation Post passivation interconnection structures
US7355282B2 (en) 2004-09-09 2008-04-08 Megica Corporation Post passivation interconnection process and structures
US7864329B2 (en) 2004-12-21 2011-01-04 Halliburton Energy Services, Inc. Fiber optic sensor system having circulators, Bragg gratings and couplers
US7835598B2 (en) * 2004-12-21 2010-11-16 Halliburton Energy Services, Inc. Multi-channel array processor
EP1869737B1 (fr) * 2005-03-16 2021-05-12 Davidson Instruments, Inc. Capteur fabry-perot haute intensite
US8384189B2 (en) * 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
CN1901162B (zh) 2005-07-22 2011-04-20 米辑电子股份有限公司 连续电镀制作线路组件的方法及线路组件结构
US7705421B1 (en) 2005-11-18 2010-04-27 National Semiconductor Corporation Semiconductor die with an integrated inductor
US20070252998A1 (en) * 2006-03-22 2007-11-01 Berthold John W Apparatus for continuous readout of fabry-perot fiber optic sensor
US7684051B2 (en) * 2006-04-18 2010-03-23 Halliburton Energy Services, Inc. Fiber optic seismic sensor based on MEMS cantilever
EP2021747B1 (fr) 2006-04-26 2018-08-01 Halliburton Energy Services, Inc. Capteurs sismiques micro-électromécanique à fibres optiques à masse supportée par des bras articulés
JP4878502B2 (ja) * 2006-05-29 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
US8115937B2 (en) 2006-08-16 2012-02-14 Davidson Instruments Methods and apparatus for measuring multiple Fabry-Perot gaps
US7787128B2 (en) * 2007-01-24 2010-08-31 Halliburton Energy Services, Inc. Transducer for measuring environmental parameters
US20080186123A1 (en) * 2007-02-07 2008-08-07 Industrial Technology Research Institute Inductor devices
US8129817B2 (en) * 2008-12-31 2012-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing high-frequency signal loss in substrates
US8546907B2 (en) * 2009-04-15 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced transmission lines for radio frequency applications
US8552829B2 (en) 2010-11-19 2013-10-08 Infineon Technologies Austria Ag Transformer device and method for manufacturing a transformer device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746028A2 (fr) * 1995-06-01 1996-12-04 Plessey Semiconductors Limited Arrangement à inducteur intégré
US5770509A (en) * 1996-12-06 1998-06-23 Electronics & Telecommunications Research Institute Method for forming an inductor devices using substrate biasing technique

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JPH0272660A (ja) * 1988-09-07 1990-03-12 Kawasaki Steel Corp 半導体装置
US5500552A (en) * 1993-07-26 1996-03-19 T.I.F. Co., Ltd. LC element, semiconductor device and LC element manufacturing method
TW275152B (fr) * 1993-11-01 1996-05-01 Ikeda Takeshi
US5497028A (en) * 1993-11-10 1996-03-05 Ikeda; Takeshi LC element and semiconductor device having a signal transmission line and LC element manufacturing method
TW267260B (fr) * 1993-12-29 1996-01-01 Tif Kk
US5760456A (en) * 1995-12-21 1998-06-02 Grzegorek; Andrew Z. Integrated circuit compatible planar inductors with increased Q
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
US5736749A (en) * 1996-11-19 1998-04-07 Lucent Technologies Inc. Integrated circuit device with inductor incorporated therein
US5936299A (en) * 1997-03-13 1999-08-10 International Business Machines Corporation Substrate contact for integrated spiral inductors
EP0940849A1 (fr) * 1998-03-05 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Piste conductrice à faibles pertes sur un substrat et procédé pour sa fabrication
JP3942264B2 (ja) * 1998-03-11 2007-07-11 富士通株式会社 半導体基板上に形成されるインダクタンス素子
US6133079A (en) * 1999-07-22 2000-10-17 Chartered Semiconductor Manufacturing Ltd. Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746028A2 (fr) * 1995-06-01 1996-12-04 Plessey Semiconductors Limited Arrangement à inducteur intégré
US5770509A (en) * 1996-12-06 1998-06-23 Electronics & Telecommunications Research Institute Method for forming an inductor devices using substrate biasing technique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BURGHARTZ J N ET AL: "SPIRAL INDUCTORS AND TRANSMISSION LINES IN SILICON TECHNOLOGY USING COPPER-DAMASCENE INTERCONNECTS AND LOW-LOSS SUBSTRATES", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,US,IEEE INC. NEW YORK, vol. 45, no. 10, PART 02, 1 October 1997 (1997-10-01), pages 1961 - 1968, XP000704848, ISSN: 0018-9480 *

Also Published As

Publication number Publication date
FR2798219B1 (fr) 2002-06-28
US6242791B1 (en) 2001-06-05
DE19940035A1 (de) 2001-03-01
GB2353139B (en) 2001-08-29
FR2798220A1 (fr) 2001-03-09
GB2353139A (en) 2001-02-14
FR2798220B1 (fr) 2001-11-16
GB2353139A9 (en) 2001-06-21
US6201289B1 (en) 2001-03-13
FR2798219A1 (fr) 2001-03-09
GB9919091D0 (en) 1999-10-13

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