MD4554B1 - Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS - Google Patents
Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdSInfo
- Publication number
- MD4554B1 MD4554B1 MDA20170092A MD20170092A MD4554B1 MD 4554 B1 MD4554 B1 MD 4554B1 MD A20170092 A MDA20170092 A MD A20170092A MD 20170092 A MD20170092 A MD 20170092A MD 4554 B1 MD4554 B1 MD 4554B1
- Authority
- MD
- Moldova
- Prior art keywords
- inp
- cds
- deposition
- board
- increasing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 230000008021 deposition Effects 0.000 abstract 4
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată, în special, în convertoarele fotovoltaice.Procedeul de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS include creşterea stratului p-InP pe un substrat, executat în formă de plachetă din p+InP cu orientarea cristalografică (100), dezorientarea de 3…5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1018 cm-3, depunerea, pe partea frontală a plachetei, prin metoda volumului cuaziînchis a stratului n+CdS, depunerea pe partea posterioară a unui contact ohmic din Ag+Zn, tratarea termică a lui la temperatura de 450°C, depunerea unui contact ohmic din In pe stratul din n+CdS, tratarea termică a lui la temperatura de 250°C şi depunerea prin metoda pulverizării, la temperatuta de 300°C, a unui strat antireflector de ZnO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20170092A MD4554C1 (ro) | 2017-10-18 | 2017-10-18 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20170092A MD4554C1 (ro) | 2017-10-18 | 2017-10-18 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4554B1 true MD4554B1 (ro) | 2018-02-28 |
| MD4554C1 MD4554C1 (ro) | 2018-09-30 |
Family
ID=61282887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20170092A MD4554C1 (ro) | 2017-10-18 | 2017-10-18 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4554C1 (ro) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1011979A (en) * | 1959-06-18 | 1965-12-01 | Monsanto Co | Production of epitaxial films |
| EP0962963A1 (en) * | 1997-08-27 | 1999-12-08 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate |
| EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
| MD3372B1 (ro) * | 2006-03-31 | 2007-07-31 | Sergiu SISIANU | Procedeu de obtinere a fotoelementelor (variante) |
| JP2008270488A (ja) * | 2007-04-19 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| RU2008111514A (ru) * | 2005-08-26 | 2009-10-10 | Смольтек Аб (Se) | Межсоединения и теплорассеиватели на основе наноструктур |
| MD151Y (ro) * | 2008-12-30 | 2010-02-26 | Universitatea De Stat Din Moldova | Procedeu de crestere a straturilor epitaxiale GaAs intr-un reactor orizontal |
| US20120125392A1 (en) * | 2010-11-19 | 2012-05-24 | The Boeing Company | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
| MD4280B1 (ro) * | 2013-09-04 | 2014-03-31 | Universitatea De Stat Din Moldova | Procedeu de creştere a structurii pInP-nCdS |
| MD972Y (ro) * | 2015-02-19 | 2015-11-30 | Universitatea De Stat Din Moldova | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
| MD4510B1 (ro) * | 2016-06-23 | 2017-08-31 | Государственный Университет Молд0 | Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare |
-
2017
- 2017-10-18 MD MDA20170092A patent/MD4554C1/ro not_active IP Right Cessation
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1011979A (en) * | 1959-06-18 | 1965-12-01 | Monsanto Co | Production of epitaxial films |
| EP0962963A1 (en) * | 1997-08-27 | 1999-12-08 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate |
| EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
| RU2008111514A (ru) * | 2005-08-26 | 2009-10-10 | Смольтек Аб (Se) | Межсоединения и теплорассеиватели на основе наноструктур |
| MD3372B1 (ro) * | 2006-03-31 | 2007-07-31 | Sergiu SISIANU | Procedeu de obtinere a fotoelementelor (variante) |
| JP2008270488A (ja) * | 2007-04-19 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| MD151Y (ro) * | 2008-12-30 | 2010-02-26 | Universitatea De Stat Din Moldova | Procedeu de crestere a straturilor epitaxiale GaAs intr-un reactor orizontal |
| US20120125392A1 (en) * | 2010-11-19 | 2012-05-24 | The Boeing Company | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
| MD4280B1 (ro) * | 2013-09-04 | 2014-03-31 | Universitatea De Stat Din Moldova | Procedeu de creştere a structurii pInP-nCdS |
| MD972Y (ro) * | 2015-02-19 | 2015-11-30 | Universitatea De Stat Din Moldova | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
| MD4510B1 (ro) * | 2016-06-23 | 2017-08-31 | Государственный Университет Молд0 | Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare |
Non-Patent Citations (1)
| Title |
|---|
| Chitoroagă A.D. Иследование фотоэлектрических свойствгетероструктур InP-CdS, 1992 * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4554C1 (ro) | 2018-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |