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MD4510C1 - Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare - Google Patents

Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Info

Publication number
MD4510C1
MD4510C1 MDA20160074A MD20160074A MD4510C1 MD 4510 C1 MD4510 C1 MD 4510C1 MD A20160074 A MDA20160074 A MD A20160074A MD 20160074 A MD20160074 A MD 20160074A MD 4510 C1 MD4510 C1 MD 4510C1
Authority
MD
Moldova
Prior art keywords
growth
inp
solar cells
epitaxial layer
pinp
Prior art date
Application number
MDA20160074A
Other languages
English (en)
Russian (ru)
Other versions
MD4510B1 (ro
Inventor
Василе БОТНАРЮК
Петру ГАШИН
Леонид ГОРЧАК
Андрей КОВАЛ
Борис ЧИНИК
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20160074A priority Critical patent/MD4510C1/ro
Publication of MD4510B1 publication Critical patent/MD4510B1/ro
Publication of MD4510C1 publication Critical patent/MD4510C1/ro

Links

Abstract

Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la dispozitive de conversie a radiaţiei solare.Procedeul de creştere a structurii n+-p-p+InP pentru celule solare include creşterea stratului epitaxial pInP pe un substrat de p+InP cu orientarea cristalografică (100), dezorientarea de 3…5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1…3·1018 cm-3, creşterea stratului epitaxial de n+InP şi depunerea contactelor ohmice. Stratul n+InP este crescut după corodarea gazoasă a reactorului şi a stratului epitaxial de pInP.
MDA20160074A 2016-06-23 2016-06-23 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare MD4510C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (ro) 2016-06-23 2016-06-23 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (ro) 2016-06-23 2016-06-23 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Publications (2)

Publication Number Publication Date
MD4510B1 MD4510B1 (ro) 2017-08-31
MD4510C1 true MD4510C1 (ro) 2018-03-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20160074A MD4510C1 (ro) 2016-06-23 2016-06-23 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Country Status (1)

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MD (1) MD4510C1 (ro)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (ro) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
JP2000223422A (ja) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd 半導体エピタキシャルウエハおよびその製造方法ならびに半導体装置
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (ja) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd 化合物半導体エピタキシャルウェーハの製造方法
MD151Z (ro) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal
UA54800U (ru) * 2010-05-19 2010-11-25 Сычикова Яна Александровна СПОСОБ ПОЛУЧЕНИЯ ПЛЕНКИ НА ПОДКЛАДКЕ ИЗ ПОРИСТОГО СЛОЯ InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (ro) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova Procedeu de creştere a structurii pInP-nCdS
MD972Y (ro) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (ro) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
JP2000223422A (ja) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd 半導体エピタキシャルウエハおよびその製造方法ならびに半導体装置
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (ja) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd 化合物半導体エピタキシャルウェーハの製造方法
MD151Z (ro) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal
UA54800U (ru) * 2010-05-19 2010-11-25 Сычикова Яна Александровна СПОСОБ ПОЛУЧЕНИЯ ПЛЕНКИ НА ПОДКЛАДКЕ ИЗ ПОРИСТОГО СЛОЯ InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (ro) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova Procedeu de creştere a structurii pInP-nCdS
MD972Y (ro) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
C.J.Keavney and M.B.Spitzer. Indium phosphide solar cells made by ion implantation. Appl.Phys.Lett.52 (17), 25 April 1988, p.1439-1440 *
Mitsuru Sugo, Akio Yamamoto and Masafumi Yamaguchi. N+-p-p+inp Structure inp Solar Cells Grown by Organometallic Vapor-Phase Epitaxy. IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED-34. NO.4. APRIL, 1987. PP.772-777 *
Vasile BOTNARIUC, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Ion INCULEŢ, Simion RAEVSCHI, Celule solare cu homojoncţiune din fosfură de indiu, Studia Universitatis Moldaviae, Revistă Ştiinţifică a Universităţii de Stat din Moldova, 2013, nr.2(62) *

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees