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MD4280B1 - Procedeu de creştere a structurii pInP-nCdS - Google Patents

Procedeu de creştere a structurii pInP-nCdS

Info

Publication number
MD4280B1
MD4280B1 MDA20130062A MD20130062A MD4280B1 MD 4280 B1 MD4280 B1 MD 4280B1 MD A20130062 A MDA20130062 A MD A20130062A MD 20130062 A MD20130062 A MD 20130062A MD 4280 B1 MD4280 B1 MD 4280B1
Authority
MD
Moldova
Prior art keywords
ncds
pinp
substrate
growth method
cdcl2
Prior art date
Application number
MDA20130062A
Other languages
English (en)
Moldavian (mo)
Russian (ru)
Other versions
MD4280C1 (ro
Inventor
Vasile Botnariuc
Leonid Gorceac
Andrei Coval
Boris Cinic
Simion Raevschi
Original Assignee
Universitatea De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitatea De Stat Din Moldova filed Critical Universitatea De Stat Din Moldova
Priority to MDA20130062A priority Critical patent/MD4280C1/ro
Publication of MD4280B1 publication Critical patent/MD4280B1/ro
Publication of MD4280C1 publication Critical patent/MD4280C1/ro

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la fabricarea dispozitivelor de conversie a radiaţiei solare în energie electrică.Procedeul de creştere a structurii pInP-nCdS include amplasarea unui substrat de pInP, corodat preventiv, cu orientarea cristalografică (100) şi dezorientarea de 3…5° în direcţia (110) într-un reactor, încălzirea zonei de creştere a substratului şi stabilizarea temperaturii în diapazonul de 400…450°C, pulverizarea, în flux deschis de oxigen, a soluţiilor de CdCl2 şi SnCl4 cu formarea pe substrat a unui strat de Cd2SnO4, apoi pulverizarea soluţiilor de CdCl2 şi CS(NH2)2 cu formarea pe acesta a unui strat de nCdS.
MDA20130062A 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS MD4280C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Publications (2)

Publication Number Publication Date
MD4280B1 true MD4280B1 (ro) 2014-03-31
MD4280C1 MD4280C1 (ro) 2014-10-31

Family

ID=50685394

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Country Status (1)

Country Link
MD (1) MD4280C1 (ro)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554B1 (ro) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD626G2 (ro) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
WO1999010919A1 (en) * 1997-08-27 1999-03-04 Matsushita Electric Industrial Co., Ltd. Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
US6407014B1 (en) * 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
JP3920103B2 (ja) * 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
EP1945840B1 (en) * 2005-08-26 2017-03-08 Smoltek AB Integrated circuit comprising nanostructures
MD151Z (ro) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
MD4554B1 (ro) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

Also Published As

Publication number Publication date
MD4280C1 (ro) 2014-10-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees