LU504697B1 - Thin film solar cell and corresponding production method - Google Patents
Thin film solar cell and corresponding production method Download PDFInfo
- Publication number
- LU504697B1 LU504697B1 LU504697A LU504697A LU504697B1 LU 504697 B1 LU504697 B1 LU 504697B1 LU 504697 A LU504697 A LU 504697A LU 504697 A LU504697 A LU 504697A LU 504697 B1 LU504697 B1 LU 504697B1
- Authority
- LU
- Luxembourg
- Prior art keywords
- layer
- hole transport
- thin film
- stabilizing
- solar cell
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000005525 hole transport Effects 0.000 claims abstract description 89
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 83
- 239000006096 absorbing agent Substances 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 20
- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 31
- 229910052733 gallium Inorganic materials 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 16
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 229910015707 MoOz Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 323
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011787 zinc oxide Substances 0.000 description 13
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- -1 MNx Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052951 chalcopyrite Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- RGWOFTGZWJGPHG-NKWVEPMBSA-N (2r)-3-hydroxy-2-[(1r)-2-oxo-1-(6-oxo-3h-purin-9-yl)ethoxy]propanal Chemical compound N1C=NC(=O)C2=C1N([C@@H](C=O)O[C@H](CO)C=O)C=N2 RGWOFTGZWJGPHG-NKWVEPMBSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 229910003310 Ni-Al Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910007338 Zn(O,S) Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001787 chalcogens Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005049 combustion synthesis Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Photovoltaic Devices (AREA)
Claims (25)
1. Procédé de fabrication d’une cellule solaire à couche mince comprenant les étapes consistant à : fournir un substrat (12) ; former une couche d’électrode arrière (14) sur ledit substrat ; former une structure de transport de trous (20) sur ladite couche d’électrode arrière, ladite structure de transport de trous comprenant une couche de transport de trous (16) comprenant un matériau conducteur de type p sur ladite couche d’électrode arrière et une couche stabilisante (18) sur ladite couche de transport de trous, ladite couche stabilisante comprenant un oxyde métallique et/ou un nitrure métallique ; et former une couche absorbante semi-conductrice (22) sur ladite structure de transport de trous, ladite couche absorbante comprenant un matériau chalcogéniure.
2 Procédé tel que revendiqué selon la revendication 1, dans lequel ladite couche stabilisante comprend des oxydes métalliques et/ou des nitrures métalliques d’un ou plusieurs métaux sélectionnés dans le groupe comprenant Si, Mo, Al, Ga, In, Ti et Hf.
3. Procédé tel que revendiqué selon la revendication 1 ou 2, dans lequel ladite couche stabilisante est déposée sous la forme d’un oxyde métallique sélectionné dans le groupe comprenant Al2Os, Ga203, In203, TiO2, MoO», et leurs mélanges.
4 Procédé tel que revendiqué selon l’une quelconque des revendications 1 à 3, dans lequel la couche stabilisante a une épaisseur comprise entre 10 et 100 nm.
5. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, dans lequel un minimum de bande de conduction de la couche
© LU504697 stabilisante est supérieur a celui de la couche absorbante, préférablement d’au moins 0,3 eV.
6. Procédé tel que revendiqué selon l’une quelconque des revendications _ précédentes, dans lequel la couche de transport de trous comprend un matériau chalcogéniure de type p.
7. Procédé tel que revendiqué selon la revendication 6, dans lequel la couche de transport de trous comprend un matériau sélectionné dans le groupe constitué de Cu(ln,Ga)Sez, Cu(In,Ga)(Se,S)2, CulnSez, CuGaSez, CulnSa, Cu(In, Ga)Sz et de leurs mélanges.
8. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, dans lequel la couche de transport de trous a une épaisseur comprise entre 30 et 200 nm.
9. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, dans lequel la couche absorbante comprend, de préférence est constituée de, un matériau sélectionné dans le groupe constitué de Cu(In,Ga)Se2, Cu(In,Ga)(Se,S)a, CulnSez, CuGaSez, CulnS», Cu(In,Ga)S> et de leurs mélanges.
10. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, dans lequel la couche absorbante a une épaisseur de 0,1 à 3 um.
11. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, dans lequel la formation de ladite structure de transport de trous inclut la formation d’une couche de cuivre (21) adjacente à ladite couche stabilisante.
12. Procédé tel que revendiqué selon la revendication 11, comprenant l’'hybridation de la pile de couches avec ladite couche de cuivre (21) sur le
° LU504697 sommet à une température comprise entre 400 et 600°C, préférablement entre 450°C et 550°C, en particulier d’environ 500°C, sur une durée comprise entre 5 et 30 min, en particulier entre 10 et 20 min.
13. Procédé tel que revendiqué selon la revendication 11 ou 12, dans lequel ladite couche de cuivre a une épaisseur semblable à ladite couche stabilisante.
14. Procédé tel que revendiqué selon l’une quelconque des revendications précédentes, comprenant le dépôt d’une couche de sodium entre la couche de transport de trous et la couche stabilisante.
15. Procédé tel que revendiqué selon la revendication précédente, comprenant en outre les étapes consistant à : - former une couche de transport d'électrons au-dessus de la couche absorbante ; et - former une couche d’électrode supérieure au-dessus de la couche de transport d’électrons.
16. Cellule solaire a couche mince comprenant : un substrat (12) ; une couche d’électrode arrière (14) sur ledit substrat ; une structure de transport de trous (20) sur ladite couche d’électrode arrière, ladite structure de transport de trous incluant une couche de transport de trous (16) comprenant un matériau conducteur de type p ; une couche absorbante semi-conductrice (22) sur ladite structure de transport de trous, ladite couche absorbante comprenant un matériau chalcogéniure ; une couche de transport d’électrons (24) sur la couche absorbante semi- conductrice ; et une couche d’électrode supérieure (26) sur la couche de transport d’électrons,
P-UNILU-010/LU LU504697 ladite structure de transport de trous (20) comprenant en outre une couche stabilisante (18) sur ladite couche de transport de trous (16), ladite couche stabilisante comprenant un oxyde métallique et/ou un nitrure métallique.
17. Cellule solaire à couche mince telle que revendiquée selon la revendication 16, dans laquelle ladite couche stabilisante comprend des oxydes métalliques et/ou des nitrures métalliques d’un ou plusieurs métaux sélectionnés dans le groupe comprenant Si, Mo, Al, Ga, In, Ti et Hf.
18. Cellule solaire à couche mince telle que revendiquée selon la revendication 16 ou 17, dans laquelle la couche stabilisante a une épaisseur comprise entre 10 et 100 nm.
19. Cellule solaire à couche mince telle que revendiquée selon l’une quelconque des revendications 16 à 18, dans laquelle un minimum de bande de conduction de la couche stabilisante est supérieur à celui de la couche absorbante, préférablement d’au moins 0,3 eV.
20. Cellule solaire à couche mince telle que revendiquée selon l’une quelconque des revendications 16 à 19, dans laquelle la couche stabilisante est une couche hybridée en cuivre.
21. Cellule solaire à couche mince telle que revendiquée selon l’une quelconque des revendications 16 à 20, dans laquelle la couche de transport de trous comprend un matériau chalcogéniure de type p.
22. Cellule solaire à couche mince telle que revendiquée selon la revendication 21, dans laquelle la couche absorbante comprend un matériau sélectionné dans le groupe constitué de Cu(ln,Ga)Sez, Cu(In,Ga)(Se,S)a, CulnSez, CuGaSez, CulnS», Cu(In,Ga)S2 et de leurs mélanges.
P-UNILU-010/LU LU504697
23. Cellule solaire à couche mince telle que revendiquée selon l’une quelconque des revendications 16 à 22, dans laquelle la couche absorbante a une épaisseur comprise entre 0,1 um à 3 um. 5
24. Cellule solaire à couche mince telle que revendiquée selon l’une quelconque des revendications 16 à 23, dans laquelle la couche d’électrode arrière est une couche métallique, préférablement une couche de Mo, ou une couche d'oxyde conducteur transparent.
25. Module solaire a couche mince comprenant une multiplicité de cellules solaires à couche mince selon l’une quelconque des revendications 16 à 24.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU504697A LU504697B1 (en) | 2023-07-07 | 2023-07-07 | Thin film solar cell and corresponding production method |
| PCT/EP2024/068999 WO2025012117A1 (fr) | 2023-07-07 | 2024-07-05 | Cellule solaire à couche mince et procédé de fabrication correspondant |
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| LU504697A LU504697B1 (en) | 2023-07-07 | 2023-07-07 | Thin film solar cell and corresponding production method |
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| LU504697B1 true LU504697B1 (en) | 2025-01-07 |
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| WO (1) | WO2025012117A1 (fr) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150380596A1 (en) | 2013-02-12 | 2015-12-31 | Nitto Denko Corporation | Cigs film production method, and cigs solar cell production method using the cigs film production method |
| CN112786713A (zh) | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | 一种高效超薄铜铟镓硒薄膜太阳能电池及其制备方法 |
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- 2023-07-07 LU LU504697A patent/LU504697B1/en active IP Right Grant
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- 2024-07-05 WO PCT/EP2024/068999 patent/WO2025012117A1/fr unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150380596A1 (en) | 2013-02-12 | 2015-12-31 | Nitto Denko Corporation | Cigs film production method, and cigs solar cell production method using the cigs film production method |
| CN112786713A (zh) | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | 一种高效超薄铜铟镓硒薄膜太阳能电池及其制备方法 |
Non-Patent Citations (4)
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| CHIA-WEI CHEN ET AL: "Rear-Passivated Ultrathin Cu(In,Ga)Se2 Films by Al2O3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 29, no. 48, 25 September 2019 (2019-09-25), pages n/a, XP072408951, ISSN: 1616-301X, DOI: 10.1002/ADFM.201905040 * |
| GHARIBSHAHIAN IMAN ET AL: "Effectiveness of band discontinuities between CIGS absorber and copper-based hole transport layer in limiting recombination at the back contact", MATERIALS TODAY COMMUNICATIONS, vol. 33, 1 December 2022 (2022-12-01), GB, pages 104220, XP093124531, ISSN: 2352-4928, DOI: 10.1016/j.mtcomm.2022.104220 * |
| HAN BOYANG ET AL: "Dual Optimization of Back Electrode Interface and Bulk via the Synergistic Passivation Effect of Niobium Pentoxide Enables Efficient Kesterite Solar Cells", SOLAR RRL, vol. 7, no. 13, 24 May 2023 (2023-05-24), XP093123894, ISSN: 2367-198X, DOI: 10.1002/solr.202300185 * |
| HASAN MD MANZURUL ET AL: "Thickness and Doping Optimization of CdS/CIGS P-i-N Photovoltaic Cell: Envisioned for Enhanced Conversion Efficiency", 2019 4TH INTERNATIONAL CONFERENCE ON ELECTRICAL INFORMATION AND COMMUNICATION TECHNOLOGY (EICT), IEEE, 20 December 2019 (2019-12-20), pages 1 - 5, XP033757448, DOI: 10.1109/EICT48899.2019.9068772 * |
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| Publication number | Publication date |
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| WO2025012117A1 (fr) | 2025-01-16 |
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