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KR970076069A - Contact mask - Google Patents

Contact mask Download PDF

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Publication number
KR970076069A
KR970076069A KR1019960017618A KR19960017618A KR970076069A KR 970076069 A KR970076069 A KR 970076069A KR 1019960017618 A KR1019960017618 A KR 1019960017618A KR 19960017618 A KR19960017618 A KR 19960017618A KR 970076069 A KR970076069 A KR 970076069A
Authority
KR
South Korea
Prior art keywords
contact
substrate
contact mask
mask
central portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960017618A
Other languages
Korean (ko)
Inventor
마상훈
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960017618A priority Critical patent/KR970076069A/en
Publication of KR970076069A publication Critical patent/KR970076069A/en
Withdrawn legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 콘택 마스크에 관한 것으로, 균일한 크기를 갖는 콘택 홀을 형성하기 위하여 기판의 주변부에 형성된 콘택 패턴이 상기 기판의 중앙부에 형성된 콘택 패턴보다 크게 형성된 콘택 마스크를 이용하므로써 공정 마진이 확보된다. 그러므로 사진 공정시 초점 거리의 차이가 발생되거나, 웨이퍼의 수평도가 불량하더라도 균일한 크기를 갖는 콘택 홀이 형성되고, 따라서, 소자의 수율이 향상될 수 있는 콘택 마스크에 관한 것이다.The present invention relates to a contact mask, and in order to form a contact hole having a uniform size, a contact mask formed in a peripheral portion of the substrate is formed using a contact mask formed to be larger than a contact pattern formed in the central portion of the substrate. Therefore, the present invention relates to a contact mask in which a contact hole having a uniform size is formed even when a focal length difference occurs in a photolithography process or a wafer is in a poor horizontal state, and thus yield of a device can be improved.

Description

콘택 마스크Contact mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제4도는 본 발명에 따른 콘택 마스크의 평면도.FIG. 4 is a plan view of a contact mask according to the present invention. FIG.

Claims (4)

빛이 투과될 수 있는 기판과, 상기 기판에 형성되며, 콘택 홀이 형성된 위치와 일치되는 위치에 각각 형성된 다수의 콘택 패턴으로 이루어진 콘택 마스크에 있어서, 상기 기판의 주변부에 형성된 콘택 패턴이 상기 기판의 중앙부에 형성된 콘택 패턴보다 크게 형성된 것을 특징으로 하는 콘택 마스크.A contact mask comprising: a substrate through which light can be transmitted; and a plurality of contact patterns formed on the substrate, the contact patterns being formed at positions corresponding to positions where the contact holes are formed, And the contact pattern is formed larger than the contact pattern formed at the central portion. 제1항에 있어서, 상기 기판의 주변부에 형성된 콘택 패턴은 가로변 및 세로변의 길이가 각각 0.59 내지 0.61㎛인 것을 특징으로 하는 콘택 마스크.The contact mask according to claim 1, wherein the contact patterns formed on the periphery of the substrate have a length of 0.59 to 0.61 mu m in side and side lengths, respectively. 제1항에 있어서, 상기 기판의 중앙부에 형성된 콘택 패턴은 가로변 및 세로변의 길이가 각각 0.55 내지 0.57㎛인 것을 특징으로 하는 콘택 마스크.The contact mask according to claim 1, wherein the contact patterns formed at the central portion of the substrate have lengths of 0.55 to 0.57 mu m in side and side lengths, respectively. 제1항에 있어서, 상기 기판 및 콘택 패턴중 하나에는 빛의 투과를 방지하기 위하여 크롬이 코팅된 것을 특징으로 하는 콘택 마스크.The contact mask of claim 1, wherein one of the substrate and the contact pattern is coated with chromium to prevent transmission of light. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017618A 1996-05-23 1996-05-23 Contact mask Withdrawn KR970076069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017618A KR970076069A (en) 1996-05-23 1996-05-23 Contact mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017618A KR970076069A (en) 1996-05-23 1996-05-23 Contact mask

Publications (1)

Publication Number Publication Date
KR970076069A true KR970076069A (en) 1997-12-10

Family

ID=66220353

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017618A Withdrawn KR970076069A (en) 1996-05-23 1996-05-23 Contact mask

Country Status (1)

Country Link
KR (1) KR970076069A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282695B1 (en) * 1998-04-28 2001-03-02 윤종용 Method for fabricating of semiconductor device
KR100807083B1 (en) * 2006-08-11 2008-02-25 동부일렉트로닉스 주식회사 Mask for forming contact hole, mask manufacturing method and flash memory device manufacturing method using the mask
KR20150078628A (en) * 2013-12-31 2015-07-08 엘지디스플레이 주식회사 Mask for forming active layer and manufacturing method of thin film transistor using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282695B1 (en) * 1998-04-28 2001-03-02 윤종용 Method for fabricating of semiconductor device
US6331377B2 (en) 1998-04-28 2001-12-18 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device
KR100807083B1 (en) * 2006-08-11 2008-02-25 동부일렉트로닉스 주식회사 Mask for forming contact hole, mask manufacturing method and flash memory device manufacturing method using the mask
KR20150078628A (en) * 2013-12-31 2015-07-08 엘지디스플레이 주식회사 Mask for forming active layer and manufacturing method of thin film transistor using the same

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19960523

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid