KR970076033A - 액정표시장치의 제조방법 - Google Patents
액정표시장치의 제조방법 Download PDFInfo
- Publication number
- KR970076033A KR970076033A KR1019960016135A KR19960016135A KR970076033A KR 970076033 A KR970076033 A KR 970076033A KR 1019960016135 A KR1019960016135 A KR 1019960016135A KR 19960016135 A KR19960016135 A KR 19960016135A KR 970076033 A KR970076033 A KR 970076033A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- forming
- patterning
- layer
- gate lines
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (2)
- 기판을 준비하는 스텝; 상기 기판상의 일정영역에 섬모양의 반도체층을 형성하고 상기 반도체층을 포함하는 기판 전면에 제1절연층을 형성하는 스텝; 상기 제1절연층상에 게이트전극물질을 형성하고 패터닝하여 상기 반도체층들상에 일부가 중첩되고 일정간격을 갖는 복수개의 게이트라인들을 형성하는 스텝; 상기 게이트라인들을 마스크로 기판 전면에 불순물이온을 주입하여 상기 반도체층들에 소오스영역들과 드레인영역들을 형성하는 스텝; 상기 게이트라인들을 포함한 기판 전면에 제2절연층을 형성하고 패터닝하여 게이트라인들의 일부분이 노출되도록 제1콘택홀들을 형성하는 스텝; 상기 제2절연층상에 투명도전층을 형성하고, 패터닝하여 상기 제1콘택홀들을 통해 게이트라인들에 연결되도록 스토리지전극을 형성하는 스텝; 상기 스토리지전극을 포함한 기판전면에 제3절연층을 형성하고 패터닝하여 상기 반도체층들의 드레인영역들이 노출되도록 제2콘택홀들을 형성하는 스텝; 상기 제3절연층상에 투명도전층을 형성하고 패터닝하여 상기 제2콘택홀들을 통해 상기 드레인영역들에 연결되고 상기 스토리지전을 포함하도록 화소전극을 형성하는 스텝; 상기 화소전극을 포함한 기판 전면에 제4절연층을 형성하고 패터닝하여 상기 반도체층들의 소오스영역들이 노출되도록 제3콘택홀들을 형성하는 스텝; 그리고 상기 제4절연층상에 금속층을 형성하고 패터닝하여 상기 제3콘택홀들을 통해 상기 소오스영역들에 연결되고 상기 화소전극에 중첩되지 않으며 상기 게이트라인들에 수직한 방향으로 일정간격을 갖는 복수개의 데이타라인들을 형성하는 스텝을 구비함을 특징으로 하는 액정표시장치의 제조방법.
- 제1항에 있어서, 투명도전층은 ITO로 형성함을 특징으로 하는 액정표시장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016135A KR100192447B1 (ko) | 1996-05-15 | 1996-05-15 | 액정표시장치의 제조방법 |
US08/846,099 US5834328A (en) | 1996-05-15 | 1997-04-25 | Method for fabricating liquid crystal display |
JP12537497A JP3072593B2 (ja) | 1996-05-15 | 1997-05-15 | 液晶表示装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016135A KR100192447B1 (ko) | 1996-05-15 | 1996-05-15 | 액정표시장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970076033A true KR970076033A (ko) | 1997-12-10 |
KR100192447B1 KR100192447B1 (ko) | 1999-06-15 |
Family
ID=19458722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960016135A KR100192447B1 (ko) | 1996-05-15 | 1996-05-15 | 액정표시장치의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5834328A (ko) |
JP (1) | JP3072593B2 (ko) |
KR (1) | KR100192447B1 (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100311531B1 (ko) * | 1998-11-11 | 2002-09-17 | 엘지.필립스 엘시디 주식회사 | 횡전계방식액정표시장치및그제조방법 |
KR100392850B1 (ko) * | 2000-12-29 | 2003-07-28 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
KR100583705B1 (ko) * | 2001-10-15 | 2006-05-26 | 가부시키가이샤 히타치세이사쿠쇼 | 액정 표시 장치, 화상 표시 장치 및 그 제조 방법 |
KR100740932B1 (ko) * | 2001-04-20 | 2007-07-19 | 삼성전자주식회사 | 박막 트랜지스터 기판, 그의 제조 방법 및 액정 표시 장치 |
KR100795344B1 (ko) * | 2001-05-29 | 2008-01-17 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그의 제조방법 |
US8841669B2 (en) | 2010-06-03 | 2014-09-23 | Samsung Display Co., Ltd. | Flat panel display device and method of manufacturing the same |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW435820U (en) * | 1993-01-18 | 2001-05-16 | Semiconductor Energy Lab | MIS semiconductor device |
US6190933B1 (en) * | 1993-06-30 | 2001-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
JP3312083B2 (ja) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3935246B2 (ja) * | 1997-08-18 | 2007-06-20 | エルジー フィリップス エルシーディー カンパニー リミテッド | 液晶表示装置 |
JP3941901B2 (ja) * | 1998-04-28 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100333179B1 (ko) * | 1998-06-30 | 2002-08-24 | 주식회사 현대 디스플레이 테크놀로지 | 박막트랜지스터액정표시소자및그의제조방법 |
US6313481B1 (en) | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
KR100646778B1 (ko) * | 1998-09-24 | 2007-03-02 | 삼성전자주식회사 | 액정 표시장치 |
KR100321925B1 (ko) | 1998-11-26 | 2002-10-25 | 삼성전자 주식회사 | 4장의마스크를이용한액정표시장치용박막트랜지스터기판의제조방법및액정표시장치용박막트랜지스터기판 |
JP3538084B2 (ja) * | 1999-09-17 | 2004-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4632522B2 (ja) * | 2000-11-30 | 2011-02-16 | Nec液晶テクノロジー株式会社 | 反射型液晶表示装置の製造方法 |
KR100496420B1 (ko) * | 2001-03-02 | 2005-06-17 | 삼성에스디아이 주식회사 | 2층구조의 소오스/드레인 전극을 갖는 박막 트랜지스터 및그의 제조방법과 이를 이용한 액티브 매트릭스형 표시소자및 그의 제조방법 |
KR100797374B1 (ko) * | 2001-06-05 | 2008-01-22 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
US7247529B2 (en) * | 2004-08-30 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR101112549B1 (ko) * | 2005-01-31 | 2012-06-12 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
EP0430702B1 (en) * | 1989-11-30 | 1999-01-13 | Kabushiki Kaisha Toshiba | Line material, electronic device using the line material and liquid crystal display |
US5414278A (en) * | 1991-07-04 | 1995-05-09 | Mitsushibi Denki Kabushiki Kaisha | Active matrix liquid crystal display device |
KR100268007B1 (ko) * | 1992-12-22 | 2000-10-16 | 구본준 | 액정표시소자 제조방법 |
KR0139346B1 (ko) * | 1994-03-03 | 1998-06-15 | 김광호 | 박막 트랜지스터 액정표시장치의 제조방법 |
KR100303134B1 (ko) * | 1995-05-09 | 2002-11-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자및그제조방법. |
KR0158260B1 (ko) * | 1995-11-25 | 1998-12-15 | 구자홍 | 엑티브 매트릭스 액정표시장치의 매트릭스 어레이 및 제조방법 |
-
1996
- 1996-05-15 KR KR1019960016135A patent/KR100192447B1/ko not_active IP Right Cessation
-
1997
- 1997-04-25 US US08/846,099 patent/US5834328A/en not_active Expired - Lifetime
- 1997-05-15 JP JP12537497A patent/JP3072593B2/ja not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100311531B1 (ko) * | 1998-11-11 | 2002-09-17 | 엘지.필립스 엘시디 주식회사 | 횡전계방식액정표시장치및그제조방법 |
KR100392850B1 (ko) * | 2000-12-29 | 2003-07-28 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
KR100740932B1 (ko) * | 2001-04-20 | 2007-07-19 | 삼성전자주식회사 | 박막 트랜지스터 기판, 그의 제조 방법 및 액정 표시 장치 |
KR100795344B1 (ko) * | 2001-05-29 | 2008-01-17 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그의 제조방법 |
KR100583705B1 (ko) * | 2001-10-15 | 2006-05-26 | 가부시키가이샤 히타치세이사쿠쇼 | 액정 표시 장치, 화상 표시 장치 및 그 제조 방법 |
US8841669B2 (en) | 2010-06-03 | 2014-09-23 | Samsung Display Co., Ltd. | Flat panel display device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP3072593B2 (ja) | 2000-07-31 |
US5834328A (en) | 1998-11-10 |
JPH1048612A (ja) | 1998-02-20 |
KR100192447B1 (ko) | 1999-06-15 |
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