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KR970060391A - Semiconductor device and manufacturing method - Google Patents

Semiconductor device and manufacturing method Download PDF

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Publication number
KR970060391A
KR970060391A KR1019970001415A KR19970001415A KR970060391A KR 970060391 A KR970060391 A KR 970060391A KR 1019970001415 A KR1019970001415 A KR 1019970001415A KR 19970001415 A KR19970001415 A KR 19970001415A KR 970060391 A KR970060391 A KR 970060391A
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South Korea
Prior art keywords
silicon film
film
semiconductor device
crystal
crystalline silicon
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KR1019970001415A
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Korean (ko)
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KR100419550B1 (en
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순페이 야마자키
사토시 테라모토
준 코야마
야수시 오가타
마사히코 하야카와
미츠아키 오사메
히사시 오타니
토시지 하마타니
Original Assignee
순페이 야마자키
한도타이 에네루기 겐쿠쇼 가부시키가이샤
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Publication of KR970060391A publication Critical patent/KR970060391A/en
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Publication of KR100419550B1 publication Critical patent/KR100419550B1/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

본 발명은 금속원소를 이용하여 얻어진 결정성 규소막중의 해당 금속을 제거 또는 감소시키는 것에 의해 우수한 특성을 가지는 결정성 규소막을 얻음과 동시에, 그 결정성 규소막을 사용하여 우수한 성능을 구비한 반도체장치를 얻는 것을 목적으로 하며, 이를 해결하기 위해서 본 발명은 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 도입하여 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻은 뒤, 산화성 분위기중에서 제2의 가열 처리를 행하여, 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시킴과 동시에, 형성된 열산화막을 제거하여, 해당 열산화막을 제거한 영역의 표면상에 두번째의 열산화에 의해 열산화막을 형성하는 동시에 것등에 의해 얻어진 반도체장치 및 그 제작방법으로, 해당 산화성 분위기에는 산소함유 산화성 분위기, 할로겐함유 산화성 분위기등이 사용된다.The present invention provides a semiconductor device having excellent performance by using a crystalline silicon film while obtaining a crystalline silicon film having excellent properties by removing or reducing the metal in the crystalline silicon film obtained by using a metal element. In order to solve this problem, the present invention introduces a metal element that promotes crystallization of silicon into an amorphous silicon film and crystallizes the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film. The second heat treatment is carried out to remove or reduce the metal element present in the crystalline silicon film, to remove the thermal oxide film formed, and to remove the thermal oxide film on the surface of the region from which the thermal oxide film is removed. By forming a thermally oxidized film at the same time and a method of manufacturing the same An oxidizing atmosphere, the oxidizing atmosphere such as oxygen-containing, halogen-containing oxidizing atmosphere is used.

Description

반도체장치 및 그 제작방법Semiconductor device and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제23a 내지 23e도는 실시예9에 있어서의 제작공정을 나타내는 도면.23A to 23E are views showing the production steps in Example 9. FIG.

Claims (88)

비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 산화성 분위기중에서 제2의 가열처리를 행하여, 해당 결정성 규소막 중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 행당 열산화막을 제거한 영역의 표면상에 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and performing a second heat treatment in an oxidizing atmosphere, A thermal oxide film is formed by removing or reducing the metal element present in the crystalline silicon film, removing the thermal oxide film formed in the process, and second thermal oxidation on the surface of the region from which the thermal oxide film is removed per row. A manufacturing method of a semiconductor device comprising the step of forming. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 산화성 분위기중에서 제2의 가열산화처리를 행하여 해당 결정성 규소막의 표면에 열산화막을 형성하고, 해당 열산화막에 해당 금속원소를 게터링시키는 것에 의해, 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 영역의 표면상에 두번째의 열산화에 의하여 열산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and performing a second heat oxidation treatment in an oxidizing atmosphere Forming a thermal oxide film on the surface of the crystalline silicon film and gettering the metal element to the thermal oxide film to remove or reduce the metal element present in the crystalline silicon film; And removing the thermal oxide film and forming the thermal oxide film on the surface of the region from which the thermal oxide film is removed by a second thermal oxidation. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 산화성 분위기중에서 제2의 가열산화처리를 행하여 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 패터닝을 행하여 박막트랜지스터의 활성층을 형성하는 공정과, 열산화에 의해 게이트 절연막의 적어도 일부를 구성하는 열산화막을 해당 활성층의 표면에 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and performing a second heat oxidation treatment in an oxidizing atmosphere A step of removing or reducing the metal element present in the crystalline silicon film, a step of removing the thermal oxide film formed in the step, a step of patterning to form an active layer of the thin film transistor, and a gate insulating film by thermal oxidation Forming a thermal oxide film constituting at least a portion of the active layer on the surface of the active layer. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 선택적으로 도입하는 공정과, 제1의 가열처리에 의해 해당 금속원소가 선택적으로 도입된 영역에서 막에 평행한 방향으로 결정성장을 행하게 하는 공정과, 산화성 분위기중에서 제2의 가열처리를 행하여 해당 결정성장을 행하게 한 영역의 표면에 열산화막을 형성하는 공정과, 해당 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 영역을 사용하여 반도체장치의 활성층을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.Selectively introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, and causing a crystal growth in a direction parallel to the film in a region where the metal element is selectively introduced by the first heat treatment; Forming a thermal oxide film on the surface of the region subjected to the second heat treatment in the oxidizing atmosphere to cause the crystal growth; removing the thermal oxide film; and removing the thermal oxide film. A method of manufacturing a semiconductor device, comprising the step of forming an active layer. 제1항 내지 제4항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이, 결정격자가 연속적으로 연속해있는 결정인 것을 특징으로 하는 반도체장치의 제작방법.The semiconductor device manufacturing method according to any one of claims 1 to 4, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a crystal in which crystal lattice is continuously continuous. 제1항 내지 제4항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이, 가는 막대 형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치의 제작방법.The semiconductor device manufacturing method according to any one of claims 1 to 4, wherein the crystal in the crystalline silicon film obtained by crystallizing the amorphous silicon film is a thin rod crystal or a thin flat rod crystal. 제1항 내지 제4항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이, 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한, 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치의 제작방법.The crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal, and they are parallel or almost spaced apart at intervals. A method for manufacturing a semiconductor device, characterized in that the crystal is grown in parallel. 제1항 내지 제4항 중 어느 한 항에 있어서, 규소의 결정화를 조장하는 금속원소로서, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되는 것을 특징으로 하는 반도체장치의 제작방법.The metal element of any one of claims 1 to 4, which promotes crystallization of silicon, is selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au, or A method for manufacturing a semiconductor device, wherein a plurality of kinds of elements are used. 제1항 내지 제4항 중 어느 한 항에 있어서, 제1의 가열처리온도보다도 제2의 가열처리온도가 높은 것을 특징으로 하는 반도체장치의 제작방법.The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the second heat treatment temperature is higher than the first heat treatment temperature. 제1항 내지 제4항 중 어느 한 항에 있어서, 열산화막의 제거후에 산소와 수소를 포함하는 플라즈마 분위기에서 어닐링을 행하는 것을 특징으로 하는 반도체장치의 제작방법.The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein annealing is performed in a plasma atmosphere containing oxygen and hydrogen after removing the thermal oxide film. 제1항 내지 제4항 중 어느 한 항에 있어서, 비정질 규소막중에 포함되는 산소농도가 5×1017cm-3내지 2×1019cm-3인 것을 특징으로 하는 반도체장치의 제작방법.The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the oxygen concentration contained in the amorphous silicon film is 5 x 10 17 cm -3 to 2 x 10 19 cm -3 . 제1항 내지 제4항 중 어느 한 항에 있어서, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻은 뒤, 해당 결정성 규소막에 대하여 레이저광 또는 강광의 조사를 행하는 것을 특징으로 하는 반도체장치의 제작방법.The method according to any one of claims 1 to 4, wherein the amorphous silicon film is crystallized by the first heat treatment to obtain a crystalline silicon film, and then the laser light or the strong light is irradiated to the crystalline silicon film. A method of manufacturing a semiconductor device. 제1 및 제2의 산화막에 끼워진 결정성 규소막을 가지며, 해당 결정성 규소막은 규소의 결정화를 조장하는 금속원소를 함유하고, 해당 결정성 규소막중에 있어서, 해당 금속원소가 해당 제1 및 또는 제2의 산화막과의 계면부근에서 높은 농도분포를 가지고 있는 것을 특징으로 하는 반도체장치.A crystalline silicon film sandwiched between the first and second oxide films, wherein the crystalline silicon film contains a metal element that promotes crystallization of silicon, and in the crystalline silicon film, the metal element is the first and / or first A semiconductor device having a high concentration distribution near an interface with an oxide film of 2. 제13항에 있어서, 해당 결정성 규소막중의 결정이, 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 13, wherein the crystal in the crystalline silicon film is a crystal in which crystal lattice is continuously continuous. 제13항에 있어서, 해당 결정성 규소막증의 결정은 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 13, wherein the crystal of the crystalline silicon film disease is a thin rod crystal or a thin flat rod crystal. 제13항에 있어서, 해당 결정성 규소막중의 결정은 복수의 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 13, wherein the crystals in the crystalline silicon film are a plurality of thin rod-shaped crystals or thin flat rod-shaped crystals, and they are crystals grown in parallel or substantially parallel at intervals. 제13항에 있어서, 제1의 산화막은 글라스 기판 또는 석영 기판상에 형성된 산화규소막 또는 산화질화규소막으로서, 결정성 규소막은 박막트랜지스커의 활성층을 구성하고, 제2의 산화막은 게이트 절연막을 구성하는 산화규소막 또는 산화질화규소막인 것을 특징으로 하는 반도체장치.The silicon oxide film or silicon oxynitride film formed on a glass substrate or a quartz substrate, wherein the crystalline silicon film constitutes an active layer of a thin film transistor, and the second oxide film forms a gate insulating film. A semiconductor device comprising a silicon oxide film or a silicon oxynitride film. 산화막으로 이루어지는 기초막과, 해당 기초막상에 형성된 결정성 규소막과, 해당 결정성 규소막상에 형성된 열산화막을 가지며, 해당 결정성 규소막 중에는 규소의 결정화를 조장하는 금속원소가 포함되고, 해당 규소의 결정화를 조장하는 금속원소는 기초 및 또는 열산화막과의 계면부근에서 높은 농도 분포를 가지며, 해당 열산화막이 박막트랜지스터의 게이트 절연막의 적어도 일부를 구성하고 있는 것을 특징으로 하는 반도체장치.A base film made of an oxide film, a crystalline silicon film formed on the base film, and a thermal oxide film formed on the crystalline silicon film, wherein the crystalline silicon film contains a metal element that promotes crystallization of silicon, and the silicon A metal element for facilitating crystallization of a semiconductor element having a high concentration distribution in the vicinity of an interface with a base and / or a thermal oxide film, wherein the thermal oxide film forms at least a part of the gate insulating film of the thin film transistor. 제18항에 있어서, 해당 결정성 규소막중의 결정은 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치.19. The semiconductor device according to claim 18, wherein the crystal in the crystalline silicon film is a crystal in which crystal lattice is continuously continuous. 제18항에 있어서, 해당 결정성 규소막중의 결정이, 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 18, wherein the crystal in the crystalline silicon film is a thin rod crystal or a thin flat rod crystal. 제18항에 있어서, 해당 결정성 규소막중의 결정은 복수의 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치.19. The semiconductor device according to claim 18, wherein the crystals in the crystalline silicon film are a plurality of thin rod-shaped crystals or thin flat rod-shaped crystals, and they are crystals grown in parallel or almost parallel at intervals. 제18항에 있어서, 규소의 결정화를 조장하는 금속원소로서, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되게 되는 것을 특징으로 하는 반도체장치.19. The metal element according to claim 18, wherein one or more kinds of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au are used as the metal elements that promote the crystallization of silicon. A semiconductor device, characterized in that. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열처리를 행하여, 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 영역의 표면상에 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and a second heating in an oxidizing atmosphere containing a halogen element Treating to remove or reduce the metal element present in the crystalline silicon film; removing the thermal oxide film formed in the step; and second thermal oxidation on the surface of the region from which the thermal oxide film is removed. A method of manufacturing a semiconductor device, comprising the step of forming a thermal oxide film. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열산화처리를 행하여, 해당 결정성 규소막의 표면에 열산화막을 형성하고, 해당 열산화막에 해당 금속 원소를 게터링시키는 것에 의해 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 영역의 표면상에 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and a second heating in an oxidizing atmosphere containing a halogen element Performing an oxidation treatment to form a thermal oxide film on the surface of the crystalline silicon film, and gettering the metal element on the thermal oxide film to remove or reduce the metal element present in the crystalline silicon film; And removing the thermal oxide film formed in the step, and forming the thermal oxide film by the second thermal oxidation on the surface of the region from which the thermal oxide film has been removed. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하여, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열산화처리를 행하여, 해당 결정성 규소막중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 패터닝을 실행하고, 박막트랜지스터의 활성층을 형성하는 공정과, 열산화에 의해 게이트 절연막의 적어도 일부를 구성하는 열산화막을 해당 활성층의 표면에 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A step of intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and a second heating in an oxidizing atmosphere containing a halogen element Performing an oxidation treatment to remove or reduce the metal element present in the crystalline silicon film, removing the thermal oxide film formed in the step, patterning, and forming an active layer of the thin film transistor; And forming a thermal oxide film constituting at least a part of the gate insulating film by thermal oxidation on the surface of the active layer. 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 선택적으로 도입하는 공정과, 제1의 가열처리에 의해 해당 금속원소가 선택적으로 도입된 영역에서 막에 평행한 방향으로 결정성장을 행하게 하는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열처리를 행하고, 해당 결정성장이 행하여진 영역의 표면에 열산화막을 형성하는 공정과, 해당 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 영역을 사용하여 반도체장치의 활성층을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.Selectively introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, and causing a crystal growth in a direction parallel to the film in a region where the metal element is selectively introduced by the first heat treatment; And performing a second heat treatment in an oxidizing atmosphere containing a halogen element, forming a thermal oxide film on the surface of the region where the crystal growth is performed, removing the thermal oxide film, and removing the thermal oxide film. And forming an active layer of the semiconductor device using the same. 제23항 내지 제26항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정은 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치의 제작방법.27. The method of manufacturing a semiconductor device according to any one of claims 23 to 26, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a crystal in which crystal lattice is continuously continuous. 제23항 내지 제26항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정은 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치의 제작방법.The semiconductor device manufacturing method according to any one of claims 23 to 26, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal. 제23항 내지 제26항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치의 제작방법.27. The crystal of any one of claims 23 to 26, wherein the crystals in the crystalline silicon film in which the amorphous silicon film is crystallized are thin rod crystals or thin flat rod crystals, and they are parallel or nearly parallel at intervals. A method for manufacturing a semiconductor device, characterized in that it is a grown crystal. 제23항 내지 제 26항 중 어느 한 항에 있어서, 규소의 결정화를 조장하는 금속원소로서, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되는 것을 특징으로 하는 반도체장치의 제작방법.27. The metal element as claimed in any one of claims 23 to 26, which promotes the crystallization of silicon, is selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au, or A method for manufacturing a semiconductor device, wherein a plurality of kinds of elements are used. 제23항 내지 제26항 중 어느 한 항에 있어서, 할로겐원소를 포함한 산화성 분위기는, O2분위기중에 HCl, HF, HBr, Cl2, F2, Br2로부터 선택된 한 종류 또는 복수종류의 가스가 첨가된 것을 특징으로 하는 반도체장치의 제작방법.The oxidative atmosphere containing a halogen element according to any one of claims 23 to 26, wherein one or a plurality of gases selected from HCl, HF, HBr, Cl 2 , F 2 , and Br 2 in an O 2 atmosphere is used. Method for manufacturing a semiconductor device, characterized in that added. 제23항 내지 제26항 중 어느 한 항에 있어서, 할로겐원소를 포함한 산화성 분위기는, O2를 포함한 분위기중에 HCl, HF, HBr, Cl2, F2, Br2로부터 선택된 한 종류 또는 복수종류의 가스가 첨가된 것을 특징으로 하는 반도체장치의 제작방법.The oxidizing atmosphere containing a halogen element according to any one of claims 23 to 26, wherein the oxidizing atmosphere containing a halogen element is selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2 , Br 2 in the atmosphere containing O 2 . A method for manufacturing a semiconductor device, wherein gas is added. 제23항 내지 제26항 중 어느 한 항에 있어서, 할로겐원소를 포함한 산화성 분위기에는 산소와 할로겐원소의 수소화물의 가스가 첨가된 것을 특징으로 하는 반도체장치의 제작방법.27. The method of manufacturing a semiconductor device according to any one of claims 23 to 26, wherein oxygen and a hydride gas of a halogen element are added to an oxidative atmosphere containing a halogen element. 제23항 내지 제26항 중 어느 한 항에 있어서, 제1의 가열처리온도보다도 제2의 가열처리온도가 높은 것을 특징으로 하는 반도체장치의 제작방법.27. The method of manufacturing a semiconductor device according to any one of claims 23 to 26, wherein the second heat treatment temperature is higher than the first heat treatment temperature. 제23항 내지 제26항 중 어느 한 항에 있어서. 제2의 가열처리온도가 700℃ 내지 1100℃의 범위인 것을 특징으로 하는 반도체장치의 제작방법.27. The method of any of claims 23 to 26. And a second heat treatment temperature is in the range of 700 ° C to 1100 ° C. 제23항 내지 제26항 중 어느 한 항에 있어서, 열산화막을 제거한 후에, 산소와 수소를 포함하는 플라즈마 분위기에서의 어닐링을 행하는 것을 특징으로 하는 반도체장치의 제작방법.27. The method of manufacturing a semiconductor device according to any one of claims 23 to 26, wherein after the thermal oxide film is removed, annealing is performed in a plasma atmosphere containing oxygen and hydrogen. 제23항 내지 제26항 중 어느 한 항에 있어서, 비정질 규소막중에 포함되는 산소농도가 5×1017cm-3내지 2×1019cm-3인 것을 특징으로 하는 반도체장치의 제작방법.27. The method of manufacturing a semiconductor device according to any one of claims 23 to 26, wherein an oxygen concentration contained in the amorphous silicon film is 5 x 10 17 cm -3 to 2 x 10 19 cm -3 . 제23항 내지 제36항 중 어느 한 항에 있어서, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻은 뒤, 해당 결정성 규소막에 대하여 레이저광 또는 강광의 조사를 행하는 것을 특징으로 하는 반도체장치의 제작방법.37. The method according to any one of claims 23 to 36, wherein the amorphous silicon film is crystallized by the first heat treatment to obtain a crystalline silicon film, and then the laser light or strong light is irradiated to the crystalline silicon film. A method of manufacturing a semiconductor device. 제1 및 제2의 산화막에 끼워진 결정성 규소막을 가지며, 해당 결정성 규소막은 수소 및 할로겐원소를 포함하며 또한 규소의 결정화를 조장하는 금속원소를 함유하고, 해당 결정성 규소막중에 있어서, 해당 금속원소는 해당 제1의 산화막 및 또는 해당 제2의 산화막과의 계면부근에서 높은 농도분포를 가지고 있는 것을 특징으로 하는 반도체장치.A crystalline silicon film sandwiched between the first and second oxide films, the crystalline silicon film containing hydrogen and a halogen element, and containing a metal element that promotes the crystallization of silicon; and in the crystalline silicon film, the metal The element has a high concentration distribution in the vicinity of the interface with the first oxide film and the second oxide film. 제39항에 있어서, 해당 결정성 규소막중의 결정이 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치.40. The semiconductor device according to claim 39, wherein the crystal in the crystalline silicon film is a crystal in which crystal lattice is continuously continuous. 제39항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치.40. The semiconductor device according to claim 39, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal. 제39항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 복수의 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치.40. A crystal according to claim 39, wherein the crystals in the crystalline silicon film in which the amorphous silicon film is crystallized are a plurality of thin rod crystals or thin flat rod crystals, and they are crystals grown in parallel or almost parallel at intervals. A semiconductor device. 제39항에 있어서, 제1의 산화막중 및/또는 제1의 산화막과 결정성 규소막과의 계면부근에는 높은 농도분포로 취하여 할로겐원소가 함유되어 있는 것을 특징으로 하는 반도체장치.40. The semiconductor device according to claim 39, wherein a halogen element is contained in the first oxide film and / or near the interface between the first oxide film and the crystalline silicon film in a high concentration distribution. 제39항에 있어서, 결정성 규소막중에 있어서의 제2의 산화막과의 계면부근에는, 높은 농도분포로 취하여 할로겐원소가 함유되어 있는 것을 특징으로 하는 반도체장치.40. The semiconductor device according to claim 39, wherein a halogen element is contained in a high concentration distribution near the interface with the second oxide film in the crystalline silicon film. 제39항에 있어서, 제1의 산화막은 글라스 기판 또는 석영 기판상에 형성된 산화규소막 또는 산화질화규소막으로서, 결정성 규소막은 박막트랜지스터의 활성층을 구성하며, 제2의 산화막은 게이트 절연막을 구성하는 산화규소막 또는 산화질화규소막인 것을 특징으로 하는 반도체장치.40. The silicon oxide film or silicon oxynitride film formed on a glass substrate or a quartz substrate, wherein the crystalline silicon film constitutes an active layer of a thin film transistor, and the second oxide film forms a gate insulating film. A semiconductor device comprising a silicon oxide film or a silicon oxynitride film. 산화막으로 이루어지는 기초막과, 해당 기초막상에 형성된 결정성 규소막과, 해당 결정성 규소막상에 형성된 열산화막을 가지며, 해당 결정성 규소막 중에는 규소의 결정화를 조장하는 금속원소 및 수소 및 할로겐 원소가 포함되고, 해당 규소의 결정화를 조장하는 금속원소는 기초막 및/또는 열산화막과의 계면부근에서 높은 농도분포를 가지며, 해당 할로겐원소는 기초막 및/또는 열산화막과의 계면부근에서 높은 농도분포를 가지며, 해당 열산화막은 박막트랜지스터의 게이트 절연막의 적어도 일부를 구성하는 것을 특징으로 하는 반도체장치.A base film made of an oxide film, a crystalline silicon film formed on the base film, and a thermal oxide film formed on the crystalline silicon film, and in the crystalline silicon film, a metal element, which promotes crystallization of silicon, hydrogen and a halogen element Metal elements which promote the crystallization of the silicon have a high concentration distribution near the interface with the base film and / or the thermal oxide film, and the halogen element has a high concentration distribution near the interface with the base film and / or the thermal oxide film. And the thermal oxide film constitutes at least a part of the gate insulating film of the thin film transistor. 제46항에 있어서, 해당 결정성 규소막중의 결정이 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 46, wherein the crystal in the crystalline silicon film is a crystal in which crystal lattice is continuously continuous. 제46항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 46, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal. 제46항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 복수가 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치.The crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a plurality of thin rod-shaped crystals or thin flat rod-shaped crystals, and they are crystals grown in parallel or almost parallel at intervals. A semiconductor device. 제46항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되게 되는 것을 특징으로 하는 반도체장치.47. The method according to claim 46, wherein one or more kinds of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au are used as the metal elements that promote the crystallization of silicon. A semiconductor device characterized by the above-mentioned. 절연표면을 가지는 기판상에 비정질 규소막을 성막하는 공정과, 해당 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하는 공정과, 온도 750℃ 내지 1100℃의 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 해당 결정성 규소막을 패터닝하여 반도체장치의 활성층을 형성하는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열처리를 행하여 해당 활성층중에 존재하는 해당 금속원소를 제거 또는 감소시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 후에 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하고, 해당 제2의 가열처리의 온도는 해당 제1의 가열처리의 온도보다도 높은 것을 특징으로 하는 반도체장치의 제작방법.Forming an amorphous silicon film on a substrate having an insulating surface; intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film; and first heat treatment at a temperature of 750 ° C to 1100 ° C. Crystallizing the amorphous silicon film to obtain a crystalline silicon film; patterning the crystalline silicon film to form an active layer of a semiconductor device; and performing a second heat treatment in an oxidizing atmosphere containing a halogen element to thereby exist in the active layer. A step of removing or reducing the metal element, a step of removing the thermal oxide film formed in the step, and a step of forming the thermal oxide film by a second thermal oxidation after the removal of the thermal oxide film, and the second heating. The temperature of the process is higher than the temperature of the first heat treatment. . 절연표면을 가지는 기판상에 비정질 규소막을 성막하는 공정과, 해당 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적으로 도입하는 공정과, 온도 750℃ 내지 1100℃의 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 해당 결정성 규소막을 패터닝하여 반도체장치의 활성층을 형성하는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열처리를 행하여, 해당 활성층중에 존재하는 해당 금속원소를, 형성되는 열산화막중에 게터링시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 후에 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하고, 해당 제2의 가열처리의 온도는 해당 제1의 가열처리의 온도보다도 높은 것을 특징으로 하는 반도체장치의 제작방법.Forming an amorphous silicon film on a substrate having an insulating surface; intentionally introducing a metal element that promotes crystallization of silicon into the amorphous silicon film; and first heat treatment at a temperature of 750 ° C to 1100 ° C. Crystallizing the amorphous silicon film to obtain a crystalline silicon film, patterning the crystalline silicon film to form an active layer of a semiconductor device, and performing a second heat treatment in an oxidizing atmosphere containing a halogen element to be present in the active layer. And a step of gettering the metal element in the thermal oxide film to be formed, removing the thermal oxide film formed in the process, and forming the thermal oxide film by second thermal oxidation after removing the thermal oxide film. And the temperature of the second heat treatment is higher than the temperature of the first heat treatment. The manufacturing method of the device. 절연표면을 가지는 기판상에 비정질 규소막을 성막하는 공정과, 해당 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 의도적 또는 선택적으로 도입하는 공정과, 온도 750℃ 내지 1100℃의 제1의 가열처리에 의해 해당 비정질 규소막의 해당 금속원소가 의도적 또는 선택적으로 도입된 영역에서 막에 평행한 방향으로 결정성장을 행하게 하는 공정과, 패터닝을 행하여 해당 막에 평행한 방향으로 결정성장한 영역을 사용하여 반도체장치의 활성층을 형성하는 공정과, 할로겐원소를 포함한 산화성 분위기중에서 제2의 가열처리를 행하여 해당 활성층을 존재하는 해당 금속원소, 형성되는 열산화막중에 게터링시키는 공정과, 해당 공정에서 형성된 열산화막을 제거하는 공정과, 해당 열산화막을 제거한 후에, 두번째의 열산화에 의해 열산화막을 형성하는 공정을 포함하고, 해당 제2의 가열처리의 온도는 해당 제1의 가열처리의 온도보다도 높은 것을 특징으로 하는 반도체장치의 제작방법.A process of forming an amorphous silicon film on a substrate having an insulating surface, a step of intentionally or selectively introducing a metal element that promotes crystallization of silicon into the amorphous silicon film, and a first heat treatment at a temperature of 750 ° C to 1100 ° C A semiconductor device using a step of causing crystal growth in a direction parallel to the film in a region in which the metal element of the amorphous silicon film is intentionally or selectively introduced, and a region in which the crystal growth is performed in a direction parallel to the film by patterning. Forming an active layer, performing a second heat treatment in an oxidizing atmosphere containing a halogen element to getter the active layer in the metal element present and the thermal oxide film formed, and removing the thermal oxide film formed in the process. And removing the thermal oxide film, and then forming a thermal oxide film by second thermal oxidation. And a temperature of the second heat treatment is higher than a temperature of the first heat treatment. 제51항 내지 제53항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 결정격자가 연속적으로 있는 결정인 것을 특징으로 하는 반도체장치의 제작방법.The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a crystal in which crystal lattice is continuously formed. 제51항 내지 제53항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치의 제작방법.54. The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal. 제51항 내지 제53항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 복수의 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치의 제작방법.55. The crystal in any of the crystalline silicon films in which the amorphous silicon film is crystallized is a plurality of thin rod crystals or thin flat rod crystals, and they are parallel or nearly spaced apart. A method for manufacturing a semiconductor device, characterized in that the crystal is grown in parallel. 제51항 내지 제53항 중 어느 한 항에 있어서, 비정질 규소막을 형성하는 기판으로서 석영 기판이 사용되는 것을 특징으로 하는 반도체장치의 제작방법.54. The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein a quartz substrate is used as the substrate for forming the amorphous silicon film. 제51항 내지 제53항 중 어느 한 항에 있어서, 두번째의 열산화막을 이용하여 게이트 절연막을 형성하는 것을 특징으로 하는 반도체장치의 제작방법.54. The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein a gate insulating film is formed using a second thermal oxide film. 제51항 내지 제53항 중 어느 한 항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되게 되는 것을 특징으로 하는 반도체장치의 제작방법.54. A metal according to any one of claims 51 to 53, selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au as a metal element that promotes crystallization of silicon. A method of manufacturing a semiconductor device, characterized in that a kind of element is used. 제51항 내지 제53항 중 어느 한 항에 있어서, 열산화막을 제거한 후에, 산소와 수소를 포함하는 플라즈마 분위기에서의 어닐링을 행하는 것을 특징으로 하는 반도체장치의 제작방법.54. The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein after the thermal oxide film is removed, annealing is performed in a plasma atmosphere containing oxygen and hydrogen. 제51항 내지 제53항 중 어느 한 항에 있어서, 비정질 규소막중에 포함되는 산소농도가 5×1017cm-3내지 2×1019cm-3인 것을 특징으로 하는 반도체장치의 제작방법.54. The method of manufacturing a semiconductor device according to any one of claims 51 to 53, wherein the oxygen concentration contained in the amorphous silicon film is 5 x 10 17 cm -3 to 2 x 10 19 cm -3 . 제51항 내지 제53항 중 어느 한 항에 있어서, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻은 뒤, 해당 결정성 규소막에 대하여 레이저광 또는 강광의 조사를 행하는 것을 특징으로 하는 반도체장치의 제작방법.55. The method according to any one of claims 51 to 53, wherein the amorphous silicon film is crystallized by the first heat treatment to obtain a crystalline silicon film, and then the laser light or strong light is irradiated to the crystalline silicon film. A method of manufacturing a semiconductor device. 비정질 규소막을 형성하는 공정과, 해당 비정질 규소막의 표면에 규소의 결정화를 조장하는 금속원소를 접하여 유지시키는 공정과, 제1의 가열처리를 행하여 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 산소와 수소와 플루오르를 포함하는 분위기중에 있어서 온도 500℃ 내지 700℃에서의 제2의 가열처리를 행하고 해당 결정성 규소막의 표면에 열산화막을 형성하는 공정과, 해당 열산화막을 제거하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A process of forming an amorphous silicon film, a process of contacting and maintaining a metal element that promotes crystallization of silicon on the surface of the amorphous silicon film, a process of crystallizing the amorphous silicon film by a first heat treatment to obtain a crystalline silicon film, and Performing a second heat treatment at a temperature of 500 ° C to 700 ° C in an atmosphere containing oxygen, hydrogen, and fluorine to form a thermal oxide film on the surface of the crystalline silicon film; and removing the thermal oxide film. A method of manufacturing a semiconductor device, characterized in that. 비정질 규소막을 형성하는 공정과, 해당 비정질 규소막의 표면에 규소의 결정화를 조장하는 금속원소를 접하여 유지시키는 공정과. 제1의 가열처리를 행하여 해당 비정질 규소막을 결정화시켜 규소막을 얻는 공정과, 산소와 수소와 플루오르와 염소를 포함하는 분위기중에 있어서 온도 500℃ 내지 700℃에서의 제2의 가열처리를 행하고 해당 결정성 규소막의 표면에 열산화막을 형성하는 공정과, 해당 열산화막을 제거하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.Forming an amorphous silicon film; and contacting and holding a metal element that promotes crystallization of silicon on the surface of the amorphous silicon film. Performing a first heat treatment to crystallize the amorphous silicon film to obtain a silicon film, and performing a second heat treatment at a temperature of 500 ° C. to 700 ° C. in an atmosphere containing oxygen, hydrogen, fluorine, and chlorine to obtain the silicon crystal. And a step of forming a thermal oxide film on the surface of the silicon film and removing the thermal oxide film. 비정질 규소막을 형성하는 공정과, 해당 비정질 규소막의 표면에 규소의 결정화를 조장하는 금속원소를 접하여 유지시키는 공정과, 가열처리를 행하여 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 공정과, 플루오르 및/또는 염소를 포함하는 분위기중에 있어서 웨트산화막을 해당 결정성 규소막의 표면에 형성하는 공정과, 해당 산화막을 제거하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A process of forming an amorphous silicon film, a process of contacting and maintaining a metal element that promotes crystallization of silicon on the surface of the amorphous silicon film, and a step of performing heat treatment to crystallize the amorphous silicon film to obtain a crystalline silicon film, fluorine and / or Or a step of forming the wet oxide film on the surface of the crystalline silicon film in an atmosphere containing chlorine, and removing the oxide film. 제63항 내지 제65항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치의 제작방법.66. The method of manufacturing a semiconductor device according to any one of claims 63 to 65, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a crystal in which crystal lattice is continuously continuous. 제63항 내지 제65항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치의 제작방법.The semiconductor device manufacturing method according to any one of claims 63 to 65, wherein the crystal in the crystalline silicon film in which the amorphous silicon film is crystallized is a thin rod crystal or a thin flat rod crystal. 제63항 내지 제65항 중 어느 한 항에 있어서, 해당 비정질 규소막을 결정화시킨 결정성 규소막중의 결정이 복수의 가는 막대형상결정 또는 가는 편평한 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치의 제작방법.The crystal in any of the crystalline silicon films in which the amorphous silicon film is crystallized is a plurality of thin rod-shaped crystals or thin flat rod-shaped crystals, and they are parallel or substantially spaced at intervals. A method for manufacturing a semiconductor device, characterized in that the crystal is grown in parallel. 제63항 내지 제65항 중 어느 한 항에 있어서, 산화막중에 있어서의 해당 금속원소의 농도는, 결정성 규소막중에 있어서의 해당 금속원소의 농도보다도 높은 것을 특징으로 하는 반도체장치의 제작방법.66. The method of manufacturing a semiconductor device according to any one of claims 63 to 65, wherein the concentration of the metal element in the oxide film is higher than the concentration of the metal element in the crystalline silicon film. 제63항 내지 제65항 중 어느 한 항에 있어서, 제2의 가열처리를 행하는 분위기중에는 수소가 1 용량%이상, 폭발 한계 이하의 농도로 포함되어 있는 것을 특징으로 하는 반도체장치의 제작방법.66. The method of manufacturing a semiconductor device according to any one of claims 63 to 65, wherein hydrogen is contained at a concentration of 1% by volume or more and less than an explosion limit in the atmosphere for performing the second heat treatment. 제63항 내지 제65항 중 어느 한 항에 있어서, 제1의 가열처리를 환원분위기에서 행하는 것을 특징으로 하는 반도체장치의 제작방법.66. The method of manufacturing a semiconductor device according to any one of claims 63 to 65, wherein the first heat treatment is performed in a reducing atmosphere. 제63항 내지 제65항 중 어느 한 항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되는 것을 특징으로 하는 반도체장치의 제작방법.66. The method according to any one of claims 63 to 65, wherein one or more selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au as metal elements that promote crystallization of silicon A method for manufacturing a semiconductor device, characterized in that a kind of element is used. 제63항 내지 제65항 중 어느 한 항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Ni를 사용하는 것을 특징으로 하는 반도체장치의 제작방법.66. The method of manufacturing a semiconductor device according to any one of claims 63 to 65, wherein Ni is used as the metal element that promotes crystallization of silicon. 제63항 내지 제65항 중 어느 한 항에 있어서, 제1의 가열처리에 의해 해당 비정질 규소막을 결정화시켜 결정성 규소막을 얻은 뒤, 해당 결정성 규소막에 대하여 레이저광 또는 강광의 조사를 행하는 것을 특징으로 하는 반도체장치의 제작방법.66. The method according to any one of claims 63 to 65, wherein the amorphous silicon film is crystallized by the first heat treatment to obtain a crystalline silicon film, and then the laser beam or the strong light is irradiated to the crystalline silicon film. A method of manufacturing a semiconductor device. 결정성을 가지는 규소막을 가지는 반도체장치에 있어서, 해당 규소막에는 규소의 결정화를 조장하는 금속원소가 1×1016cm-3내지 5×1018cm-3의 농도로 포함되고, 플루오르원자가 1×1015cm-3내지 5×1021cm-3의 농도로 포함되어 있는 것을 특징으로 하는 반도체장치.In a semiconductor device having a silicon film having crystallinity, the silicon film contains a metal element that promotes crystallization of silicon at a concentration of 1 × 10 16 cm -3 to 5 × 10 18 cm -3 , and has 1 × fluorine atom. 10 15 cm −3 to 5 × 10 21 cm −3 , wherein the semiconductor device is included. 제75항에 있어서, 해당 결정성을 가지는 규소막중의 결정이 결정격자가 연속적으로 연속해 있는 결정인 것을 특징으로 하는 반도체장치.76. The semiconductor device according to claim 75, wherein the crystal in the silicon film having the crystallinity is a crystal in which crystal lattice is continuously continuous. 제75항에 있어서, 해당 결정성을 가지는 규소막중의 결정이 가는 막대형상결정 또는 가는 편평한 막대형상결정인 것을 특징으로 하는 반도체장치.76. The semiconductor device according to claim 75, wherein the crystal in the silicon film having the crystallinity is a thin rod crystal or a thin flat rod crystal. 제75항에 있어서, 해당 결정성을 가지는 규소막중의 결정이 복수의 가는 막대형상결정 또는 가는 편평항 막대형상결정이고, 또한 그것들이 간격을 두고 평행 또는 거의 평행하게 성장한 결정인 것을 특징으로 하는 반도체장치.76. The semiconductor according to claim 75, wherein the crystal in the silicon film having the crystallinity is a plurality of thin rod-shaped crystals or thin flat-sided rod-shaped crystals, and they are crystals grown in parallel or almost parallel at intervals. Device. 제75항에 있어서, 규소의 결정화를 조장하는 금속원소로서, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 한 종류 또는 복수종류의 원소가 사용되는 것을 특징으로 하는 반도체장치.76. The method of claim 75, wherein one or more kinds of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au are used as the metal elements that promote the crystallization of silicon. A semiconductor device characterized by the above-mentioned. 제75항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Ni가 사용되고 있는 것을 특징으로 하는 반도체장치.76. The semiconductor device according to claim 75, wherein Ni is used as a metal element that promotes crystallization of silicon. 제75항에 있어서, 해당 규소막은 절연막상에 형성되어 있고, 해당 절연막과 해당 규소막과의 계면부근에서 플루오르원자가 높은 농도분포로 존재하고 있는 것을 특징으로 하는 반도체장치.76. The semiconductor device according to claim 75, wherein the silicon film is formed on the insulating film, and the fluorine atoms are present in a high concentration distribution near the interface between the insulating film and the silicon film. 비정질 규소막을 형성하는 공정과, 해당 비정질 규소막을 결정화하여 결정성 규소막을 형성하는 공정과, 플루오르 화합물기체가 첨가된 산화성 분위기중에서 가열하여 해당 결정성 규소막의 표면에 열산화막을 성장시키는 공정과, 해당 결정성 규소막 표면의 열산화막을 제거하는 공정과, 해당 결정성 규소막의 표면에 절연막을 퇴적하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.Forming a crystalline silicon film, crystallizing the amorphous silicon film to form a crystalline silicon film, heating a oxidized atmosphere to which a fluorine compound gas is added, and growing a thermal oxide film on the surface of the crystalline silicon film; A process of removing a thermal oxide film on the surface of a crystalline silicon film, and a step of depositing an insulating film on the surface of the crystalline silicon film. 절연표면을 가지는 기판상에 박막트랜지스터를 제작하는 방법에 있어서, 비정질 규소막을 형성하는 공정과, 해당 비정질 규소막을 결정화하여 결정성 규소막을 형성하는 공정과, 플루오르 화합물기체가 첨가된 산화성 분위기중에서 가열하여 해당 결정성 규소막의 표면에 열산화막을 성장시키는 공정과, 해당 결정성 규소막 표면의 열산화막을 제거하는 공정과, 해당 결정성 규소막을 정형하여 박막트랜지스터의 활성층을 형성하는 공정과, 해당 활성층의 표면에 절연막을 퇴적하고 적어도 채널영역의 표면에 게이트 절연막을 형성하는 공정과, 해당 게이트 절연막의 표면에 게이트전극을 형성하는 공정과, 해당 게이트전극을 마스크로 하여 해당 활성층에 전도형을 부여하는 불순물이온을 주입하여 소스영역과 드레인영역을 자기 정합적으로 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제작방법.A method of fabricating a thin film transistor on a substrate having an insulating surface, the method comprising forming an amorphous silicon film, crystallizing the amorphous silicon film to form a crystalline silicon film, and heating in an oxidizing atmosphere to which a fluorine compound gas is added. Growing a thermal oxide film on the surface of the crystalline silicon film, removing a thermal oxide film on the surface of the crystalline silicon film, shaping the crystalline silicon film to form an active layer of the thin film transistor, and Depositing an insulating film on the surface and forming a gate insulating film on at least the surface of the channel region, forming a gate electrode on the surface of the gate insulating film, and impurity imparting conductivity to the active layer using the gate electrode as a mask. Ions are implanted to form source and drain regions self-aligning The manufacturing method of a semiconductor device comprising a process. 제82항 또는 제83항에 있어서, 해당 비정질 규소막을 결정화하여 결정성 규소막을 형성하는 공정은, 해당 비정질 규소막의 표면에 규소의 결정화를 조장하는 금속원소를 도입한 뒤, 가열처리를 행하여 해당 비정질 규소막을 결정화시키는 것에 의해 결정성 규소막을 얻는 공정인 것을 특징으로 하는 반도체장치의 제작방법.84. The process of claim 82 or 83, wherein the step of crystallizing the amorphous silicon film to form a crystalline silicon film includes introducing a metal element that promotes crystallization of silicon on the surface of the amorphous silicon film, followed by heating to perform the amorphous treatment. A process for producing a semiconductor device, characterized in that the step of obtaining a crystalline silicon film by crystallizing the silicon film. 제82항 또는 제83항에 있어서, 해당 비정질 규소막을 결정화하여 결정성 규소막을 형성하는 공정은, 해당 비정질 규소막의 표면에 규소의 결정화를 조장하는 금속원소를 도입한 뒤, 가열처리를 행하여 해당 비정질 규소막을 결정화시키는 것에 의해 결정성 규소막을 얻은 뒤, 해당 결정성 규소막에 레이저광 또는 강광을 조사하는 공정인 것을 특징으로 하는 반도체장치의 제작방법.84. The process of claim 82 or 83, wherein the step of crystallizing the amorphous silicon film to form a crystalline silicon film includes introducing a metal element that promotes crystallization of silicon on the surface of the amorphous silicon film, followed by heating to perform the amorphous treatment. And a step of irradiating a laser light or a strong light to the crystalline silicon film after obtaining the crystalline silicon film by crystallizing the silicon film. 제82항 또는 제83항에 있어서, 해당 열산화막의 막두께는 200 내지 500 옹스트롬인 것을 특징으로 하는 반도체장치의 제작방법.84. The method of claim 82 or 83, wherein the thermal oxide film has a thickness of 200 to 500 angstroms. 제82항 또는 제83항에 있어서, 해당 비정질 규소막을 형성하는 공정의 후에, 해당 비정질 규소막에 규소의 결정화를 조장하는 금속원소를 1×1016내지 5×1019원자/cm3의 농도로 첨가하는 공정을 더 포함하는 것을 특징으로 하는 반도체장치의 제작방법.84. The method according to claim 82 or 83, wherein after the step of forming the amorphous silicon film, the metal element which promotes the crystallization of silicon in the amorphous silicon film at a concentration of 1 × 10 16 to 5 × 10 19 atoms / cm 3 . The manufacturing method of the semiconductor device characterized by further including the process of adding. 제82항 또는 제83항에 있어서, 해당 금속원소가 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au에서 선택된 적어도 1종류 이상의 원소인 것을 특징으로 하는 반도체장치의 제작방법.84. The semiconductor device according to claim 82 or 83, wherein the metal element is at least one element selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au. How to make. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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