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JPS62169356U - - Google Patents

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Publication number
JPS62169356U
JPS62169356U JP5613086U JP5613086U JPS62169356U JP S62169356 U JPS62169356 U JP S62169356U JP 5613086 U JP5613086 U JP 5613086U JP 5613086 U JP5613086 U JP 5613086U JP S62169356 U JPS62169356 U JP S62169356U
Authority
JP
Japan
Prior art keywords
image
latent image
emitting element
light emitting
photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5613086U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5613086U priority Critical patent/JPS62169356U/ja
Publication of JPS62169356U publication Critical patent/JPS62169356U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Or Original Feeding In Electrophotography (AREA)
  • Combination Of More Than One Step In Electrophotography (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の記録装置の構成を示す概略側
面図、第2図は本考案の記録装置に用いられる感
光体の相対感度を示すグラフ、第3図は本考案に
用いられる発光素子の断面図、第4図は発光素子
におけるアノードと蛍光体の配列を示す平面図、
第5図は発光素子の駆動回路の説明図であり、第
6図は従来技術のうちのレーザ光線を用いる場合
の説明図である。 図中の符号、1……感光体、2……一成分現像
器、3……転写コロトロン、4……剥離コロトロ
ン、5……清掃装置、6……帯電コロトロン、7
……定着器、8……用紙、10……発光素子、1
1……光伝導結像手段、15……駆動回路、16
……文字・画像出力回路、20……密封容器、2
1……基板ガラス、22……上面ガラス、23…
…スペーサ、24……フイラメント、25……ア
ノード、26……蛍光体、27……グリツド。
FIG. 1 is a schematic side view showing the configuration of the recording device of the present invention, FIG. 2 is a graph showing the relative sensitivity of the photoreceptor used in the recording device of the present invention, and FIG. 3 is a graph of the light emitting element used in the present invention. 4 is a cross-sectional view, and FIG. 4 is a plan view showing the arrangement of the anode and phosphor in the light emitting element.
FIG. 5 is an explanatory diagram of a driving circuit for a light emitting element, and FIG. 6 is an explanatory diagram of a conventional technique in which a laser beam is used. Symbols in the figure: 1...Photoreceptor, 2...One-component developer, 3...Transfer corotron, 4...Peeling corotron, 5...Cleaning device, 6...Charging corotron, 7
... Fixing device, 8 ... Paper, 10 ... Light emitting element, 1
1... Photoconductive imaging means, 15... Drive circuit, 16
...Character/image output circuit, 20...Sealed container, 2
1...Substrate glass, 22...Top glass, 23...
...Spacer, 24...Filament, 25...Anode, 26...Phosphor, 27...Grid.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 感光体を所定極性電位へ一様に帯電させる帯電
工程と、原稿に照射した光の反射光により感光体
上に潜像を形成する第1の露光工程と、所定の画
素密度を形成したアレー状真空蛍光管に、画像な
いしは文字情報である電気信号を与え、蛍光体を
励起発光させることにより潜像を形成する発光素
子とからなる第2の露光工程と、該潜像を現像剤
で現像する現像工程と、像担持体である普通紙に
トナー画像を転写し、熱および圧力により該普通
紙にトナー画像を定着する工程とを設けるととも
に、前記第2の露光工程における発光素子はイレ
ーズランプを兼ねた装置として形成されることを
特徴とする記録装置。
A charging step in which the photoreceptor is uniformly charged to a predetermined polarity potential, a first exposure step in which a latent image is formed on the photoreceptor by the reflected light of the light irradiated on the document, and an array-like process in which a predetermined pixel density is formed. A second exposure step consisting of a light emitting element that forms a latent image by applying an electric signal, which is an image or text information, to the vacuum fluorescent tube to excite the phosphor to emit light; and developing the latent image with a developer. A developing step and a step of transferring the toner image to plain paper as an image carrier and fixing the toner image to the plain paper by heat and pressure are provided, and the light emitting element in the second exposure step is equipped with an erase lamp. A recording device characterized in that it is formed as a device that also serves as a device.
JP5613086U 1986-04-16 1986-04-16 Pending JPS62169356U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613086U JPS62169356U (en) 1986-04-16 1986-04-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613086U JPS62169356U (en) 1986-04-16 1986-04-16

Publications (1)

Publication Number Publication Date
JPS62169356U true JPS62169356U (en) 1987-10-27

Family

ID=30884668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613086U Pending JPS62169356U (en) 1986-04-16 1986-04-16

Country Status (1)

Country Link
JP (1) JPS62169356U (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037811B1 (en) 1996-01-26 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US7078727B2 (en) 1996-01-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7135741B1 (en) 1996-03-17 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7173282B2 (en) 1996-01-19 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a crystalline semiconductor film
US7427780B2 (en) 1996-01-19 2008-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US7456056B2 (en) 1996-01-19 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078727B2 (en) 1996-01-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7173282B2 (en) 1996-01-19 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a crystalline semiconductor film
US7427780B2 (en) 1996-01-19 2008-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US7456056B2 (en) 1996-01-19 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7037811B1 (en) 1996-01-26 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US7141491B2 (en) 1996-01-26 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7422630B2 (en) 1996-01-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US7135741B1 (en) 1996-03-17 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

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