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KR970013421A - 박막트랜지스터 제조방법 - Google Patents

박막트랜지스터 제조방법 Download PDF

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Publication number
KR970013421A
KR970013421A KR1019950027195A KR19950027195A KR970013421A KR 970013421 A KR970013421 A KR 970013421A KR 1019950027195 A KR1019950027195 A KR 1019950027195A KR 19950027195 A KR19950027195 A KR 19950027195A KR 970013421 A KR970013421 A KR 970013421A
Authority
KR
South Korea
Prior art keywords
thin film
film transistor
manufacturing
manufacturing thin
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019950027195A
Other languages
English (en)
Other versions
KR0156216B1 (ko
Inventor
김근호
Original Assignee
구자홍
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자홍, 엘지전자 주식회사 filed Critical 구자홍
Priority to KR1019950027195A priority Critical patent/KR0156216B1/ko
Publication of KR970013421A publication Critical patent/KR970013421A/ko
Application granted granted Critical
Publication of KR0156216B1 publication Critical patent/KR0156216B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 박막트랜지스터의 제조방법에 관한 것으로, 박막트랜지스터 제조시 게이트전극으로 사용하는 텅스텐 실리사이드이 고온 열처리 공정시 발생하는 크랙을 방지하기 위한 것이다. 본 발명은 박막트랜지스터의 제조방법에 있어서, 기판상에 폴리실리콘/WSi/WSiN의 적층구조를 연속적으로 증착하여 형성한 후, 패터닝하여 게이트전극을 형성하는 것을 특징으로 하는 박막트랜지스터 제조방법을 제공한다.

Description

박막트랜지스터 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부된 도면은 본 발명에 의한 박막트랜지스터 제조방법을 도시한 공정순서도.

Claims (1)

  1. 박막트랜지스터의 제조방법에 있어서, 기판상에 폴리실리콘/WSi/WSiN의 적층구조를 연속적으로 증착하여 형성한 후, 패터닝하여 게이트전극을 형성하는 것을 특징으로 하는 박막트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950027195A 1995-08-29 1995-08-29 박막트랜지스터 제조방법 Expired - Fee Related KR0156216B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950027195A KR0156216B1 (ko) 1995-08-29 1995-08-29 박막트랜지스터 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950027195A KR0156216B1 (ko) 1995-08-29 1995-08-29 박막트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
KR970013421A true KR970013421A (ko) 1997-03-29
KR0156216B1 KR0156216B1 (ko) 1998-10-15

Family

ID=19424932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950027195A Expired - Fee Related KR0156216B1 (ko) 1995-08-29 1995-08-29 박막트랜지스터 제조방법

Country Status (1)

Country Link
KR (1) KR0156216B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103607A (en) * 1998-09-15 2000-08-15 Lucent Technologies Manufacture of MOSFET devices

Also Published As

Publication number Publication date
KR0156216B1 (ko) 1998-10-15

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