[go: up one dir, main page]

KR960015700A - Exposure machine and wafer exposure method using the same - Google Patents

Exposure machine and wafer exposure method using the same Download PDF

Info

Publication number
KR960015700A
KR960015700A KR1019940025641A KR19940025641A KR960015700A KR 960015700 A KR960015700 A KR 960015700A KR 1019940025641 A KR1019940025641 A KR 1019940025641A KR 19940025641 A KR19940025641 A KR 19940025641A KR 960015700 A KR960015700 A KR 960015700A
Authority
KR
South Korea
Prior art keywords
wafer
control means
laser
field
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019940025641A
Other languages
Korean (ko)
Inventor
최동순
최현묵
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940025641A priority Critical patent/KR960015700A/en
Publication of KR960015700A publication Critical patent/KR960015700A/en
Ceased legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체 소자 제조용 노광기(stepper) 및 이를 이용한 웨이퍼의 노광방법에 관한 것으로, 노광기로 웨이퍼를 노광(exposure) 하기에 앞서 행해지는 레벨링 체크 기술에서, 레이저(laser)의 전방부위에 웨이퍼 필드 사이즈(field size)와 동일한 사이즈로 조절 가능한 다수의 블라인드(blind)로 된 빔 제어수단을 구비하고, 이 빔 제어수단의 열린 부위로 레이저 빔을 통과시켜 웨이퍼의 필드 레벨링 체크를 하므로써, 하나의 필드에 대해 정확한 레벨링 체크 데이타를 얻을 수 있어 필드 부위별 패턴불량 현상을 제거할 수 있는 반도체 소자 제조용 노광기 및 이를 이용한 웨이퍼의 노광방법에 관한 것이다.BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a stepper for manufacturing a semiconductor device and a wafer exposure method using the same. In a leveling check technique performed prior to exposing a wafer with an exposure machine, a wafer field size is placed in front of a laser. It is provided with a plurality of blind beam control means that can be adjusted to the same size as the (field size), by passing a laser beam through the open portion of the beam control means for the field level check of the wafer, The present invention relates to an exposure apparatus for manufacturing a semiconductor device capable of obtaining accurate leveling check data and removing a pattern defect phenomenon for each field region, and a wafer exposure method using the same.

Description

노광기 및 이를 이용한 웨이퍼의 노광방법Exposure machine and wafer exposure method using the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 노광기의 구성도,3 is a configuration diagram of an exposure machine according to the present invention,

제4도는 제3도의 노광기를 이용하여 웨이퍼의 필드 레벨링을 체크하는 방법을 설명하기 위한 도면.4 is a view for explaining a method of checking field leveling of a wafer using the exposure apparatus of FIG.

Claims (6)

반도체 소자 제조공정중 웨이퍼를 노광하기 위해 구비된 램프, 렌즈 및 웨이퍼를 위치시키는 스테이지와, 웨이퍼를 노광하기 전에 웨이퍼의 필드 레벨링 체크를 위해 구비된 레이저와 검출기로 이루어지는 노광기에 있어서, 상기 레이저로부터 발사되는 빔의 경로부분에 빔 제어수단이 설치된 것을 특징으로 하는 노광기.An exposure apparatus comprising a stage for positioning a lamp, a lens, and a wafer provided for exposing a wafer during a semiconductor device manufacturing process, and a laser and a detector provided for checking a field leveling of the wafer before exposing the wafer, wherein the laser is fired from the laser. An exposure apparatus characterized in that the beam control means is installed in the path portion of the beam to be. 제1항에 있어서, 상기 빔 제어수단은 4개의 블라인드로 구성되되, X축 및 Y축을 기준으로 각각 한쌍씩 대향되게 구성된 것을 특징으로 하는 노광기.The exposure apparatus according to claim 1, wherein the beam control means is composed of four blinds, each pair being opposed to each other based on the X and Y axes. 제2항에 있어서, 상기 4개의 블라인드는 그 각각이 상 · 하 · 좌 · 우로 이동가능하며, 이웃하는 블라인드간에는 중첩되게 구성된 것을 특징으로 하는 노광기.The exposure apparatus according to claim 2, wherein each of the four blinds is movable up, down, left, and right, and overlaps between neighboring blinds. 레이저로부터 발사되는 빔의 경로부분에 빔 제어수단이 설치된 노광기로 웨이퍼를 노광하는 방법에 있어서, 웨이퍼의 사이즈와 동일한 사이즈가 되게 빔 제어수단의 블라인드 각각을 조절하는 단계와, 레이저로부터 발사된 빔이 빔 제어수단을 통하여 웨이퍼에 반사되어 검출기에 정확한 빔을 체크한 후 노광하는 단계로 이루어지는 것을 특징으로 하는 웨이퍼의 노광방법.A method of exposing a wafer with an exposure apparatus provided with beam control means in the path portion of the beam emitted from the laser, the method comprising: adjusting each blind of the beam control means to have a size equal to the size of the wafer; And exposing the beam after the beam control means reflects the correct beam to the detector. 제4항에 있어서, 상기 레이저로부터 발사된 빔은 원형이며, 빔 제어수단을 통과한 빔은 필드와 동일한 형상인 사각형인 것을 특징으로 하는 웨이퍼의 노광방법.The method of claim 4, wherein the beam emitted from the laser is circular, and the beam passing through the beam control means is a quadrangle having the same shape as the field. 제4항에 있어서, 웨이퍼의 가장자리부위에 형성된 불완전한 필드는 웨이퍼의 완전한 필드에서 체크된 데이타를 기준으로 스테이지를 고정한 후 노광하는 것을 특징으로 하는 웨이퍼의 노광방법.The method of claim 4, wherein the incomplete field formed at the edge of the wafer is exposed after fixing the stage based on the data checked in the complete field of the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940025641A 1994-10-07 1994-10-07 Exposure machine and wafer exposure method using the same Ceased KR960015700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940025641A KR960015700A (en) 1994-10-07 1994-10-07 Exposure machine and wafer exposure method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940025641A KR960015700A (en) 1994-10-07 1994-10-07 Exposure machine and wafer exposure method using the same

Publications (1)

Publication Number Publication Date
KR960015700A true KR960015700A (en) 1996-05-22

Family

ID=66767207

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940025641A Ceased KR960015700A (en) 1994-10-07 1994-10-07 Exposure machine and wafer exposure method using the same

Country Status (1)

Country Link
KR (1) KR960015700A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077113A (en) * 1996-05-09 1997-12-12 고노 시게오 Surface position detection method, surface position adjusting device and projection exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077113A (en) * 1996-05-09 1997-12-12 고노 시게오 Surface position detection method, surface position adjusting device and projection exposure device

Similar Documents

Publication Publication Date Title
JPH03211813A (en) Exposure aligner
KR100620982B1 (en) Device Manufacturing Method, Recording Medium Recording Computer Program for Controlling Lithographic Apparatus and Lithographic Apparatus
KR20020022117A (en) Exposure apparatus and exposure method
KR100609109B1 (en) Device Manufacturing Method, Mask Set for use in the Method, Data Set for Controlling a Programmable Patterning Device, Method of Generating a Mask Pattern and a Computer Program
US5898479A (en) System for monitoring optical properties of photolithography equipment
JPH05206014A (en) Mask for lithography, designing and alignment of lithographic mask and sequential exposure system
JP3097620B2 (en) Scanning reduction projection exposure equipment
EP0036310B1 (en) Method and apparatus for amending a photomask
KR960015700A (en) Exposure machine and wafer exposure method using the same
KR100228570B1 (en) Method of exposure
JP2000114164A (en) Scanning projection aligner and manufacture of device using the same
JPH09270379A (en) Reticle for focus estimation and focus estimation method
JP2775436B2 (en) Exposure equipment
JPH0619115A (en) Mask for stepper
KR0146172B1 (en) Lens astigmatism measurement method of exposure apparatus
JP2806307B2 (en) Reticle for measuring lens distortion and method for measuring the same
JP2012099810A (en) Lithography apparatus and method
KR19990004109A (en) Inspection method of mask and reticle
US6225134B1 (en) Method of controlling linewidth in photolithography suitable for use in fabricating integrated circuits
JPH05206002A (en) Alignment method and reduction projection
KR100724623B1 (en) Wafer Edge Exposure Method in Exposure Equipment
KR100232713B1 (en) Semiconductor device and manufacturing method
KR100558679B1 (en) Exposure apparatus for liquid crystal display device and exposure method using the same
JP2000021764A (en) Aligner and manufacture of device
KR20010017687A (en) A light exposure system

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19941007

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19941007

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19980130

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19980420

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19980130

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I