KR960001345B1 - 글래스 리드 탑재형 반도체 장치 - Google Patents
글래스 리드 탑재형 반도체 장치 Download PDFInfo
- Publication number
- KR960001345B1 KR960001345B1 KR1019920015607A KR920015607A KR960001345B1 KR 960001345 B1 KR960001345 B1 KR 960001345B1 KR 1019920015607 A KR1019920015607 A KR 1019920015607A KR 920015607 A KR920015607 A KR 920015607A KR 960001345 B1 KR960001345 B1 KR 960001345B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- glass lead
- glass
- lead
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (4)
- 반도체수광소자(12)의 상부에 빛을 집속시키기 위한 글래스 리드(14)가 탑재되는 글래스 리드 탑재형 반도체 장치를 구성함에 있어서, 상기 반도체수광소자(12)의 각 본드 패드 위에 도전범프(11)를 형성함과 아울러 글래스 리드(14)의 양측 하면에 일단은 상기 도전범프(11)에 연결되고 타단은 기판(16)에 연결되어 소자의 전기적인 신호를 외부로 전달하는 다수개의 메탈라인(13)을 형성하고, 상기 반도체수광소자(12)와 글래스 리드(14)를 절연테이프(15)를 개재하여 결합함으로 특징으로 하는 글래스 리드 탑재형 반도체 장치.
- 제1항에 있어서, 상기 글래스 리드(14)의 메탈라인(13) 단부에 별도의 신호외부연결용 아웃리드(18)가 각각 연결된 것을 특징으로 하는 글래스 리드 탑재형 반도체 장치.
- 제1항, 또는 제2항에 있어서, 상기 글래스 리드(14)에 본딩된 반도체수광소자 (12)의 양외측면이 밀봉수지(17)에 의해 밀폐된 것을 특징으로 하는 글래스 리드 탑재형 반도체 장치.
- 제1항 또는 제2항에 있어서, 상기 글래스 리드(14)의 표면에 빛의 반사를 방지하기 위한 안티 리플렉션 코팅, 또는 빛반사방지용 테이프가 부착된 것을 특징으로 하는 글래스 리드 탑재형 반도체 장치.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015607A KR960001345B1 (ko) | 1992-08-28 | 1992-08-28 | 글래스 리드 탑재형 반도체 장치 |
US08/101,030 US5352852A (en) | 1992-08-28 | 1993-08-03 | Charge coupled device package with glass lid |
TW082106423A TW281797B (ko) | 1992-08-28 | 1993-08-11 | |
JP20067193A JP3388824B2 (ja) | 1992-08-28 | 1993-08-12 | ガラスリード載置型固体撮像素子のパッケージ |
DE4328916A DE4328916A1 (de) | 1992-08-28 | 1993-08-27 | Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015607A KR960001345B1 (ko) | 1992-08-28 | 1992-08-28 | 글래스 리드 탑재형 반도체 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940004864A KR940004864A (ko) | 1994-03-16 |
KR960001345B1 true KR960001345B1 (ko) | 1996-01-26 |
Family
ID=19338672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920015607A Expired - Fee Related KR960001345B1 (ko) | 1992-08-28 | 1992-08-28 | 글래스 리드 탑재형 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5352852A (ko) |
JP (1) | JP3388824B2 (ko) |
KR (1) | KR960001345B1 (ko) |
DE (1) | DE4328916A1 (ko) |
TW (1) | TW281797B (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2856647B2 (ja) * | 1993-09-20 | 1999-02-10 | 株式会社東芝 | 半導体チップバーンイン用ソケット |
JP3318811B2 (ja) * | 1994-12-29 | 2002-08-26 | ソニー株式会社 | 半導体発光素子のパッケージ及びその製造方法 |
US5949655A (en) * | 1997-09-09 | 1999-09-07 | Amkor Technology, Inc. | Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device |
US5929497A (en) * | 1998-06-11 | 1999-07-27 | Delco Electronics Corporation | Batch processed multi-lead vacuum packaging for integrated sensors and circuits |
US6109113A (en) * | 1998-06-11 | 2000-08-29 | Delco Electronics Corp. | Silicon micromachined capacitive pressure sensor and method of manufacture |
JP3785820B2 (ja) * | 1998-08-03 | 2006-06-14 | 豊田合成株式会社 | 発光装置 |
SG91808A1 (en) * | 1999-02-09 | 2002-10-15 | Inst Of Microelectronics | Lead frame for an integrated circuit chip (small window) |
US6448635B1 (en) | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
US6351027B1 (en) * | 2000-02-29 | 2002-02-26 | Agilent Technologies, Inc. | Chip-mounted enclosure |
US6476471B1 (en) * | 2000-03-14 | 2002-11-05 | Analog Devices, Inc. | Microelectronic-device assemblies and methods that exclude extraneous elements from sensitive areas |
US6531341B1 (en) | 2000-05-16 | 2003-03-11 | Sandia Corporation | Method of fabricating a microelectronic device package with an integral window |
US6384473B1 (en) | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
US6661084B1 (en) | 2000-05-16 | 2003-12-09 | Sandia Corporation | Single level microelectronic device package with an integral window |
AU2001253547A1 (en) | 2000-05-23 | 2001-12-03 | Atmel Corporation | Integrated ic chip package for electronic image sensor die |
US6620646B1 (en) * | 2000-11-13 | 2003-09-16 | Amkor Technology, Inc. | Chip size image sensor wirebond package fabrication method |
US6629633B1 (en) | 2000-11-13 | 2003-10-07 | Amkor Technology, Inc. | Chip size image sensor bumped package fabrication method |
US6528857B1 (en) | 2000-11-13 | 2003-03-04 | Amkor Technology, Inc. | Chip size image sensor bumped package |
FR2819104B1 (fr) * | 2000-12-29 | 2003-11-07 | St Microelectronics Sa | Boitier semi-conducteur optique a support transparent |
US20080296572A1 (en) * | 2000-12-29 | 2008-12-04 | Stmicroelectronics Sa | Optical semiconductor device with sealing spacer |
FR2819940B1 (fr) * | 2001-01-22 | 2003-10-17 | St Microelectronics Sa | Procede de fabrication d'un boitier semi-conducteur optique et boitier semi-conducteur optique |
US6974517B2 (en) * | 2001-06-13 | 2005-12-13 | Raytheon Company | Lid with window hermetically sealed to frame, and a method of making it |
USD475981S1 (en) | 2002-03-29 | 2003-06-17 | Mitsubishi Denki Kabushiki Kaisha | Integrated circuits substrate |
US6885107B2 (en) * | 2002-08-29 | 2005-04-26 | Micron Technology, Inc. | Flip-chip image sensor packages and methods of fabrication |
US6988338B1 (en) | 2002-10-10 | 2006-01-24 | Raytheon Company | Lid with a thermally protected window |
US6864116B1 (en) * | 2003-10-01 | 2005-03-08 | Optopac, Inc. | Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof |
US7141782B2 (en) * | 2004-05-24 | 2006-11-28 | Exquisite Optical Technology, Ltd. | Image sensor with protective package structure for sensing area |
CN100565887C (zh) * | 2004-09-08 | 2009-12-02 | 奇景光电股份有限公司 | 感测器封装构造及其制造方法 |
JP2006339448A (ja) * | 2005-06-02 | 2006-12-14 | Canon Inc | 受光ユニットを有する露光装置 |
US20080064201A1 (en) * | 2006-09-07 | 2008-03-13 | Wen Ching Chen | Flip chip packaging method that protects the sensing area of an image sensor from contamination |
US7911018B2 (en) * | 2007-10-30 | 2011-03-22 | Panasonic Corporation | Optical device and method of manufacturing the same |
TWI399974B (zh) * | 2010-03-12 | 2013-06-21 | Primax Electronics Ltd | 攝像模組之組裝方法 |
TWI562312B (en) * | 2014-03-24 | 2016-12-11 | Chipmos Technologies Inc | Chip-on-film package structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760440A (en) * | 1983-10-31 | 1988-07-26 | General Electric Company | Package for solid state image sensors |
US4855808A (en) * | 1987-03-25 | 1989-08-08 | Tower Steven A | Hermetic glass chip carrier |
JPS6454979A (en) * | 1987-08-26 | 1989-03-02 | Seiko Epson Corp | Transparent plastic mold image sensor |
-
1992
- 1992-08-28 KR KR1019920015607A patent/KR960001345B1/ko not_active Expired - Fee Related
-
1993
- 1993-08-03 US US08/101,030 patent/US5352852A/en not_active Expired - Lifetime
- 1993-08-11 TW TW082106423A patent/TW281797B/zh active
- 1993-08-12 JP JP20067193A patent/JP3388824B2/ja not_active Expired - Fee Related
- 1993-08-27 DE DE4328916A patent/DE4328916A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH06188403A (ja) | 1994-07-08 |
DE4328916A1 (de) | 1994-03-03 |
KR940004864A (ko) | 1994-03-16 |
TW281797B (ko) | 1996-07-21 |
JP3388824B2 (ja) | 2003-03-24 |
US5352852A (en) | 1994-10-04 |
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