KR950021006A - 프라스마발생장치 및 방법 - Google Patents
프라스마발생장치 및 방법 Download PDFInfo
- Publication number
- KR950021006A KR950021006A KR1019940022047A KR19940022047A KR950021006A KR 950021006 A KR950021006 A KR 950021006A KR 1019940022047 A KR1019940022047 A KR 1019940022047A KR 19940022047 A KR19940022047 A KR 19940022047A KR 950021006 A KR950021006 A KR 950021006A
- Authority
- KR
- South Korea
- Prior art keywords
- inductive coupling
- high frequency
- plasma
- pair
- coupling coil
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (10)
- 진공처리실(1)과, 상기 진공처리실(1)의 둘레에 감긴 유도결합용코일(2)과, 상기 진공처리실(1)에서 유도결합코일(2)의 중심축 위에 중심을 갖고, 또한 중심축에 대해서 수직, 또, 서로 평행하게 배치된 한쌍의 평판전극(3,4)과, 고주파전원(6)과, 상기 고주파전원(6)과 접속된 고주파정합기(5)를 구비하고, 상기 고주파정합기(5)는 상기 유도결합용코일(2) 및 상기 한쌍의 평판전극(3,4)중 적어도 한쪽과 접속되어 있고, 상기 한쌍의 평판전극(3,4)및 상기 유도결합용코일(2)은 각각 용량결합 및 유도결합을 동시에 행하여 상기 진공처리실(1)내에서 용량형 플라스마 및 유도결합형플라스마를 발생하는, 플라스마발생장치.
- 제1항에 있어서, 상기 한쌍의 평판전극(3,4) 및 상기 유도결합용코일(2)은 상기 고주파정합기(5)에 대해서 직렬과 접속되어 있는, 플라스마발생장치.
- 제2항에 있어서, 상기 한쌍의 평판전극(3,4)은 제1및 제2전극(4,3)으로 되고, 상기 제1전극(4)은 상기 고주파전원(6)과 함께 접지되고, 상기 유도결합용코일(2)의 일단은 상기 고주파정합기(5)와 접지되고, 다른 단부는 상기 제2전극(3)과, 접속되어 있고 플라스마처리를 하는 기판(9)은 상기 제2전극(3) 위에 재치되는 플라스마발생장치.
- 제2항에 있어서, 상기 한쌍의 평판전극(3,4)은 제1및 제2전극(4,3)으로 되고 상기 제1전극(4)은 상기 고주파정합기(5)와 접속되고, 상기 제2전극(3)은 상기 유도결합용코일(2)의 일단과 접속되고, 상기 유도결합용코일(2)의 다른 다른단부는 상기 고주파전원(6)과 함께 접지되고, 플라스마처리를 하는 기판(9)은 상기 제1전극(4) 위에 재치되는, 플라스마발생장치.
- 제1항에 있어서, 상기 한쌍의 평판전극(3,4)및 상기 유도결합용코일(2)은 상기 고주파정합기(5)에 대해서 병렬로 접속되어 있는 플라스마발생장치.
- 제5항에 있어서, 상기 한쌍의 평판전극(3,4)은 제1및 제2전극(4,3)으로 되고, 상기 제전극(4)및 상기 유도결합용코일(2)의 일단은 상기 고주파전원(6)과 함께 접지되고, 상기 유도결합용코일(2)의 다른 단부는 상기 고주파정합기(5) 및 상기 제2전극(3)과 접속되어 있고, 플라스마처리를 하는 기판(9)은 상기 제2전극(3) 위에 재치되는 플라스마발생장치.
- 제1항∼제6항의 어느 한항에 있어서, 발생되는 플라스마의 상태 및 성질은, 상기 유도결합용코일(2)의 감는법 및 감는 방향 등에 의해서 제어되는 플라스마발생장치.
- 한쌍의 평판전극(3,4) 및 유도결합용코일(2)이 각각 용량결합 및 유도결합을 동시에 행하여 진공처리실(1)내에서 용량형플라스마 및 유도결합형플라스마를 발생하는, 플라스마발생방법.
- 제8항에 있어서, 발생하는 플라스마의 상태 및 성질을, 상기 유도결합용코일(2)의 감는법 및 감는 방향등에 의해서 제어하는, 플라스마발생방법.
- 제8항 또는 제9항에 있어서, 사이 유도결합용코일(2)의 자계와 상기 한쌍의 평판전극(3,4)의 전계가 동일한 위치관계, 또한 동일주기로 반복되는 플라스마발생방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5307908A JPH07161493A (ja) | 1993-12-08 | 1993-12-08 | プラズマ発生装置及び方法 |
JP93-307908 | 1993-12-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021006A true KR950021006A (ko) | 1995-07-26 |
KR0142041B1 KR0142041B1 (ko) | 1998-07-01 |
Family
ID=17974622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940022047A KR0142041B1 (ko) | 1993-12-08 | 1994-09-02 | 플라스마발생장치 및 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5513765A (ko) |
EP (1) | EP0658073B1 (ko) |
JP (1) | JPH07161493A (ko) |
KR (1) | KR0142041B1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5849372A (en) * | 1993-09-17 | 1998-12-15 | Isis Innovation Limited | RF plasma reactor and methods of generating RF plasma |
JP3080843B2 (ja) * | 1994-08-24 | 2000-08-28 | 松下電器産業株式会社 | 薄膜形成方法及び装置 |
EP0865663A1 (de) * | 1995-12-08 | 1998-09-23 | Balzers Aktiengesellschaft | Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten |
US5669975A (en) * | 1996-03-27 | 1997-09-23 | Sony Corporation | Plasma producing method and apparatus including an inductively-coupled plasma source |
US5900105A (en) * | 1996-07-09 | 1999-05-04 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
JP3598717B2 (ja) * | 1997-03-19 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理装置 |
WO2000062328A1 (en) * | 1999-04-14 | 2000-10-19 | Surface Technology Systems Limited | Method and apparatus for stabilising a plasma |
US6417499B2 (en) * | 2000-07-06 | 2002-07-09 | Heatwave Drying Systems Ltd. | Dielectric heating using inductive coupling |
KR100383257B1 (ko) * | 2000-10-25 | 2003-05-09 | 주식회사 래디언테크 | 반도체 식각 용 진공 챔버의 하부전극 정합장치 |
US6726804B2 (en) | 2001-01-22 | 2004-04-27 | Liang-Guo Wang | RF power delivery for plasma processing using modulated power signal |
US7771562B2 (en) * | 2003-11-19 | 2010-08-10 | Tokyo Electron Limited | Etch system with integrated inductive coupling |
US7426900B2 (en) * | 2003-11-19 | 2008-09-23 | Tokyo Electron Limited | Integrated electrostatic inductive coupling for plasma processing |
US20080124254A1 (en) * | 2006-05-22 | 2008-05-29 | Dae-Kyu Choi | Inductively Coupled Plasma Reactor |
US9218944B2 (en) | 2006-10-30 | 2015-12-22 | Applied Materials, Inc. | Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors |
JP4933937B2 (ja) * | 2007-03-30 | 2012-05-16 | パナソニック株式会社 | プラズマ処理方法 |
US7972471B2 (en) * | 2007-06-29 | 2011-07-05 | Lam Research Corporation | Inductively coupled dual zone processing chamber with single planar antenna |
US20180274100A1 (en) | 2017-03-24 | 2018-09-27 | Applied Materials, Inc. | Alternating between deposition and treatment of diamond-like carbon |
US20180277340A1 (en) * | 2017-03-24 | 2018-09-27 | Yang Yang | Plasma reactor with electron beam of secondary electrons |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4233109A (en) * | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
GB8629634D0 (en) * | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
DE4022708A1 (de) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | Aetz- oder beschichtungsanlagen |
JP3132574B2 (ja) * | 1991-04-03 | 2001-02-05 | 富士電機株式会社 | プラズマ処理装置の運転方法 |
US5304282A (en) * | 1991-04-17 | 1994-04-19 | Flamm Daniel L | Processes depending on plasma discharges sustained in a helical resonator |
US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
US5277751A (en) * | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
US5350479A (en) * | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
-
1993
- 1993-12-08 JP JP5307908A patent/JPH07161493A/ja not_active Withdrawn
-
1994
- 1994-08-16 EP EP94112770A patent/EP0658073B1/en not_active Expired - Lifetime
- 1994-08-17 US US08/291,867 patent/US5513765A/en not_active Expired - Lifetime
- 1994-09-02 KR KR1019940022047A patent/KR0142041B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0658073B1 (en) | 1998-01-14 |
KR0142041B1 (ko) | 1998-07-01 |
EP0658073A1 (en) | 1995-06-14 |
US5513765A (en) | 1996-05-07 |
JPH07161493A (ja) | 1995-06-23 |
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