KR940012687A - 전류 바이어스된 자기 저항 스핀 밸브 센서 - Google Patents
전류 바이어스된 자기 저항 스핀 밸브 센서 Download PDFInfo
- Publication number
- KR940012687A KR940012687A KR1019930021386A KR930021386A KR940012687A KR 940012687 A KR940012687 A KR 940012687A KR 1019930021386 A KR1019930021386 A KR 1019930021386A KR 930021386 A KR930021386 A KR 930021386A KR 940012687 A KR940012687 A KR 940012687A
- Authority
- KR
- South Korea
- Prior art keywords
- magnetoresistive
- ferromagnetic
- magnetization
- layers
- sensor
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 26
- 230000005415 magnetization Effects 0.000 claims abstract description 15
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 16
- 239000002184 metal Substances 0.000 claims abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract 4
- 239000003302 ferromagnetic material Substances 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Abstract
Description
Claims (12)
- 비자성 금속 재료층에 의하여 분리된 제1 및 제2강자성 재료층을 포함하되, 상기 제1 및 제2강자성 재료층의 자화 용이축이 평행하고, 상기 자기 저항 센서내의 감지 전류에 의하여 발생되는 자기장에 응답하는, 상기 제1 및 제2강자성 재료층의 자화 방향이 각각 상기 자화 용이축에 대하여 동일한 크기로 대향하는 각을 이루며, 인가된 자기장에 응답하는 상기 자기 저항 센서의 저항의 변화가 상기 제1 및 제2강자성 재료층의 상기 자화 방향간의 각도 변화의 함수이고, 각각의 상기 제1 및 제2강자성 재료층의 자화가 상기 인가된 자기장에 응답하는 것을 특징으로 하는 자기 저항 센서.
- 제1항에 있어서, 상기 제1 및 제2강자성층이 철, 코발트, 니켈 및 철, 코발트 또는 니켈의 합금으로 이루어지는 그룹으로부터 선택된 강자성 재료를 포함하는 것을 특징으로 하는 자기 저항 센서.
- 제1항에 있어서, 각각의 상기 제1 및 제2강자성층의 자화 용이축이 상기 제1 및 제2강자성층의 횡축과 평행하게 정렬된 것을 특징으로 하는 자기 저항 센서.
- 제1항에 있어서, 상기 제1 및 제2강자성층 및 상기 비자성 금속층이 소정의 길이 및 폭을 가지고 그 횡축이 상기 자기 저항 센서의 공기 베어링표면에 대하여 수직인 적층된 자기 저항 감지 소자를 형성하는 것을 특징으로 하는 자기 저항 센서.
- 제4항에 있어서, 상기 저항 감지 소자의 하부 단부가 상기 공기 베어링과 동일 평면상에 위치하고 상기 공기 베어링 표면에 노출되는 것을 특징으로 하는 자기 저항 센서.
- 제4항에 있어서, 상기 자기 저항 센서를 외부 회로에 결합시키기 위하여 상기 자기 저항 감지 소자의 상부 및 하부 단부를 형성하는 단부 영역들 상에 피착된 도전 재료층을 더 포함하는 것을 특징으로 하는 자기 저항 센서.
- 제6항에 있어서, 상기 자기 저항 감지 소자 내에 횡 바이어스 피일드를 제공하기 위하여 상기 공기 베어링 표면으로부터 멀리 떨어진 상기 자기 저항 감지 소자의 상기 상부 단부의 단부영역상에 피착된 바이어스층을 더 포함하는 것을 특징으로 하는 자기 저항 센서.
- 제7항에 있어서, 상기 바이어스층이 반강자성-강자성 교환 결합에 의하여 상기 횡 바이어스 피일드를 제공하기 위하여 상기 강자성층들 중의 하나와 직접 접촉하도록 피착된 반강자성층을 포함하는 것을 특징으로 하는 자기 저항 센서.
- 제1항에 있어서, 상기 제1 및 제2강자성층이 10Å 내지 150Å 범위 내의 두께를 갖는 것을 특징으로 하는 자기 저항 센서.
- 제1항에 있어서, 상기 비자성 금소 간극층이 상기 비자성 금속 간극층 내의 도전 전자의 평균 자유 행성 길이보다 얇은 두께를 가지는 것을 특징으로 하는 자기 저항 센서.
- 자기 저장 시스템이 데이터를 기록하기 위한 다수의 트랙을 가지는 자기 저장 매체; 및 상기 자기 저장 매체에 대한 상대적 운동을 하는 동안에 상기 자기 저장 매체에 대하여 근접하여 이격되도록 유지하는 자기 트랜스듀서를 포함하고, 상기 자기 트랜스듀서는 다음의 a), b), 및 c)를 포함하는 자기 저항 센서를 구비하며; a)상기 제1 및 제2강자성 층의 자화 용이축이 평행하고, 상기 자기 저항 센서 내의 감지전류에 대하여 발생되는 자기장에 응답하는 제1 및 제2강자성층의 자화 방향이 각각 상기 장화 용이축에 대하여 동일한 크기로 대향하는 각을 이루며 상기 자기 저항 센서의 저항의 변화가 상기 제1 및 제2강자성층 내의 상기 자화 방향간의 변화의 함수로서 인가되는 자기장에 응답하고, 상기 제1 및 제2강자성층의 자화가 상기 인가된 자기장에 응답하며, 상기 자기 저항 감지 소자가 그 횡축이 상기 자기 저장 시스템 내에 형성된 데이타 트랙의 트랙폭에 수직이 되도록 위치하고, 상기 자기 저항 감지 소자의 하부 단부가 상기 자기 저항 매체에 이격하여 면하고 있으며, 비자성 금속 재료층에 의하여 분리되어 자기 저항 감지 소자를 형성하는 제1 및 제2강자성 재료층; b)상기 자기 저항 센서를 외부회로에 연결하고 상기 감지 전류를 상기 자기 저항 감지 소자에 결합하기 위하여 상기 자기 저항 감지 소자의 하부 단부 및 상부 단부 각각에 연결된 도전 리드; 및 c)상기 자기 저항 소자 내에 횡 바이어스 피일드를 제공하기 위하여 상기 자기 저항 감지 소자에 인접하여 형성된 바이어스 수단, 상기 자기 저장 시스템이 상기 트랜스듀서를 상기 자기 저장 매체 상의 선택된 데이타 트랙으로 이동시키기 위하여 상기 자기 트랜스듀서에 결합된 액츄에이터 수단; 및 상기 자기 저항 센서에 의하여 포착되는 상기 자기 저장 매체내에 기록된 데이타 비트를 나타내는 인가된 자기장에 응답하는 상기 자기 저항 재료 내의 저항의 변화를 검출하기 위하여 상기 자기 저항 센서에 결합된 검출 수단을 더 포함 하는 것을 특징으로 하는 자기 저장 시스템.
- 제11항에 있어서, 상기 제1 및 제2강자성층 각각의 자화 용이축이 상기 데이터 트랙의 트랙폭에 대하여 수직으로 위치하고, 상기 자기 저항 감지 소자의 횡측과 평행한 것을 특징으로 하는 자기 저장 시스템.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/977,382 | 1992-11-17 | ||
US07/977,382 US5301079A (en) | 1992-11-17 | 1992-11-17 | Current biased magnetoresistive spin valve sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940012687A true KR940012687A (ko) | 1994-06-24 |
KR970008168B1 KR970008168B1 (ko) | 1997-05-21 |
Family
ID=25525086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930021386A KR970008168B1 (ko) | 1992-11-17 | 1993-10-15 | 전류 바이어스된 자기 저항 스핀 밸브 센서 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5301079A (ko) |
EP (1) | EP0598581B1 (ko) |
JP (1) | JP2725987B2 (ko) |
KR (1) | KR970008168B1 (ko) |
CN (1) | CN1058801C (ko) |
DE (1) | DE69326308T2 (ko) |
MY (1) | MY110737A (ko) |
SG (1) | SG42330A1 (ko) |
TW (1) | TW225027B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100440032B1 (ko) * | 2000-08-03 | 2004-07-14 | 닛뽕덴끼 가부시끼가이샤 | 자기저항효과 소자, 자기저항효과 헤드, 자기저항 변환시스템, 및 자기 기록 시스템 |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
KR100225179B1 (ko) * | 1992-11-30 | 1999-10-15 | 니시무로 타이죠 | 박막 자기 헤드 및 자기 저항 효과형 헤드 |
US5422571A (en) * | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
FR2702919B1 (fr) * | 1993-03-19 | 1995-05-12 | Thomson Csf | Transducteur magnétorésistif et procédé de réalisation. |
JPH06309628A (ja) * | 1993-04-23 | 1994-11-04 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
JP2860233B2 (ja) * | 1993-09-09 | 1999-02-24 | 株式会社日立製作所 | 巨大磁気抵抗効果型磁気ヘッドおよびそれを用いた磁気記録再生装置 |
US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
US5465185A (en) * | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
US5699213A (en) * | 1993-11-16 | 1997-12-16 | Sanyo Electric Co., Ltd. | Magnetoresistive head having a magnetic domain control layer |
EP0676746B1 (en) * | 1994-03-09 | 1999-08-04 | Eastman Kodak Company | Spin-valve dual magnetoresistive reproduce head |
US5712751A (en) * | 1994-03-17 | 1998-01-27 | Kabushiki Kaisha Toshiba | Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same |
JP2785678B2 (ja) * | 1994-03-24 | 1998-08-13 | 日本電気株式会社 | スピンバルブ膜およびこれを用いた再生ヘッド |
US6256222B1 (en) | 1994-05-02 | 2001-07-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
US5546253A (en) * | 1994-05-06 | 1996-08-13 | Quantum Corporation | Digitial output magnetoresistive (DOMR) head and methods associated therewith |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5546254A (en) * | 1994-07-07 | 1996-08-13 | International Business Machines Corporation | Orthogonal MR Read head with single hard biased MR stripe |
US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
JPH0845029A (ja) * | 1994-08-01 | 1996-02-16 | Alps Electric Co Ltd | 薄膜磁気ヘッド |
FR2724482B1 (fr) * | 1994-09-13 | 1996-12-06 | Commissariat Energie Atomique | Tete magnetique a magnetoresistance multicouche longitudinale sous-jacente |
FR2724481B1 (fr) * | 1994-09-13 | 1996-10-18 | Commissariat Energie Atomique | Tete magnetique planaire a magnetoresistance multicouche longitudinale |
JP3367230B2 (ja) * | 1994-10-25 | 2003-01-14 | ソニー・プレシジョン・テクノロジー株式会社 | 位置検出装置 |
US5576914A (en) * | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
US5608593A (en) * | 1995-03-09 | 1997-03-04 | Quantum Peripherals Colorado, Inc. | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
SG40875A1 (en) * | 1995-06-15 | 1997-06-14 | Tdk Corp | Magnetoresistive transducer with spin-valve structure and manufacturing method of the same |
JP3362818B2 (ja) * | 1995-08-11 | 2003-01-07 | 富士通株式会社 | スピンバルブ磁気抵抗効果型トランスジューサ及び磁気記録装置 |
US5896252A (en) * | 1995-08-11 | 1999-04-20 | Fujitsu Limited | Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same |
US5648885A (en) * | 1995-08-31 | 1997-07-15 | Hitachi, Ltd. | Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer |
JPH0983039A (ja) * | 1995-09-14 | 1997-03-28 | Nec Corp | 磁気抵抗効果素子 |
US5702831A (en) | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
FR2743183B1 (fr) * | 1995-12-15 | 1998-01-30 | Commissariat Energie Atomique | Dispositif d'enregistrement a micropointe magnetoresistive |
KR100201681B1 (ko) * | 1996-01-03 | 1999-06-15 | 포만 제프리 엘 | 직교 자기저항 센서와 자기 저장 시스템 및 직교 자기저항 센서 제조 방법 |
US5668688A (en) * | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
JP2856165B2 (ja) * | 1996-08-12 | 1999-02-10 | 日本電気株式会社 | 磁気抵抗効果素子及びその製造方法 |
US5666248A (en) * | 1996-09-13 | 1997-09-09 | International Business Machines Corporation | Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields |
JPH1097709A (ja) * | 1996-09-20 | 1998-04-14 | Fujitsu Ltd | スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録再生装置 |
JP2924825B2 (ja) * | 1996-10-31 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子及びこれを用いた磁気抵抗効果センサ |
US5796561A (en) * | 1996-11-27 | 1998-08-18 | International Business Machines Corporation | Self-biased spin valve sensor |
US5768069A (en) * | 1996-11-27 | 1998-06-16 | International Business Machines Corporation | Self-biased dual spin valve sensor |
US6535362B2 (en) * | 1996-11-28 | 2003-03-18 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device having a highly smooth metal reflective layer |
SG55435A1 (en) * | 1996-12-25 | 1998-12-21 | Hitachi Ltd | Thin film magnetic head and recording reproducing separate type magnetic head and magnetic recording reproducing apparatus using them |
JP2914339B2 (ja) * | 1997-03-18 | 1999-06-28 | 日本電気株式会社 | 磁気抵抗効果素子並びにそれを用いた磁気抵抗効果センサ及び磁気抵抗検出システム |
JP2933056B2 (ja) * | 1997-04-30 | 1999-08-09 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US5825595A (en) * | 1997-05-13 | 1998-10-20 | International Business Machines Corporation | Spin valve sensor with two spun values separated by an insulated current conductor |
US6118622A (en) | 1997-05-13 | 2000-09-12 | International Business Machines Corporation | Technique for robust resetting of spin valve head |
US5748399A (en) * | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
JP2950284B2 (ja) | 1997-05-14 | 1999-09-20 | 日本電気株式会社 | 磁気抵抗効果素子、並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
JP2970590B2 (ja) | 1997-05-14 | 1999-11-02 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US5919580A (en) * | 1997-05-22 | 1999-07-06 | University Of Alabama | Spin valve device containing a Cr-rich antiferromagnetic pinning layer |
US5768071A (en) * | 1997-06-19 | 1998-06-16 | International Business Machines Corporation | Spin valve sensor with improved magnetic stability of the pinned layer |
JP2924875B2 (ja) * | 1997-10-17 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果ヘッド |
WO1999022368A2 (en) * | 1997-10-29 | 1999-05-06 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a spin-tunnel junction |
JPH11161921A (ja) | 1997-12-01 | 1999-06-18 | Nec Corp | 磁気抵抗効果素子およびその製造方法 |
KR100532377B1 (ko) * | 1998-01-15 | 2006-02-08 | 삼성전자주식회사 | 비편향 자기 저항 헤드 |
FR2774500B1 (fr) * | 1998-02-03 | 2000-04-07 | Silmag Sa | Tete magnetique de lecture a element magnetoresistant et a element conducteur de compensation |
JP3134990B2 (ja) * | 1998-03-09 | 2001-02-13 | 日本電気株式会社 | 電流制御機能素子 |
JPH11296823A (ja) | 1998-04-09 | 1999-10-29 | Nec Corp | 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ,磁気記録システム |
US6664784B1 (en) | 1998-11-26 | 2003-12-16 | Nec Corporation | Magneto-resistive sensor with ZR base layer and method of fabricating the same |
US6583971B1 (en) * | 1999-03-09 | 2003-06-24 | Sae Magnetics (Hk) Ltd. | Elimination of electric-pop noise in MR/GMR device |
DE69932701T2 (de) * | 1999-03-19 | 2007-09-13 | Hitachi Global Storage Technologies Netherlands B.V. | Pinning-Lage für magnetische Anordnungen |
JP3367477B2 (ja) | 1999-07-28 | 2003-01-14 | 日本電気株式会社 | 磁気抵抗効果素子、磁気抵抗効果ヘッド及び磁気抵抗検出システム並びに磁気記憶システム |
US6385016B1 (en) | 2000-03-31 | 2002-05-07 | Seagate Technology Llc | Magnetic read head with an insulator layer between an MR sensor and rear portions of current contacts to provide enhanced sensitivity |
WO2002025642A1 (en) * | 2000-09-19 | 2002-03-28 | Seagate Technology Llc | Giant magnetoresistive sensor having self-consistent demagnetization fields |
US6885527B1 (en) * | 2000-10-26 | 2005-04-26 | Headway Technologies, Inc. | Process to manufacture a top spin valve |
US6650509B2 (en) | 2001-03-20 | 2003-11-18 | Hitachi Global Storage Technologies Netherlands B.V. | Dual spin valve sensor with AP pinned layers |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6896262B2 (en) * | 2002-06-24 | 2005-05-24 | Rankum Llc | Method of playing a game and an apparatus suitable therefor |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US7359161B2 (en) * | 2004-06-30 | 2008-04-15 | Seagate Technology Llc | Magnetic sensor that combines both CPP and CIP modes of operation |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7369371B2 (en) | 2005-08-15 | 2008-05-06 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having a shape enhanced pinned layer |
US7835116B2 (en) * | 2005-09-09 | 2010-11-16 | Seagate Technology Llc | Magnetoresistive stack with enhanced pinned layer |
US7565733B2 (en) * | 2006-05-16 | 2009-07-28 | Hitachi Global Storage Technologies Netherlands B.V. | Process for the fabrication of multilayer thin film magnetoresistive sensors |
US8072711B1 (en) * | 2006-08-02 | 2011-12-06 | Jian-Qing Wang | System and method for the fabrication, characterization and use of magnetic corrosion and chemical sensors |
CN102213751A (zh) * | 2011-03-07 | 2011-10-12 | 安徽大学 | 一种减小自旋阀磁传感器磁滞的偏磁方法 |
TWI449067B (zh) * | 2011-06-01 | 2014-08-11 | Voltafield Technology Corp | 自旋閥磁阻感測器 |
US8829901B2 (en) * | 2011-11-04 | 2014-09-09 | Honeywell International Inc. | Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields |
WO2019108381A1 (en) * | 2017-11-29 | 2019-06-06 | Everspin Technologies, Inc. | Magnetoresistive stacks |
US11719772B2 (en) * | 2020-04-01 | 2023-08-08 | Analog Devices International Unlimited Company | AMR (XMR) sensor with increased linear range |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3921217A (en) * | 1971-12-27 | 1975-11-18 | Ibm | Three-legged magnetic recording head using a magnetorestive element |
EP0326192A3 (en) * | 1984-02-28 | 1989-09-06 | International Business Machines Corporation | Magneto resistive coupled thin films for magnetic flux sensing |
JPH07105006B2 (ja) * | 1985-11-05 | 1995-11-13 | ソニー株式会社 | 磁気抵抗効果型磁気ヘツド |
JPS63181109A (ja) * | 1987-01-21 | 1988-07-26 | Sony Corp | 磁気抵抗効果型磁気ヘツド |
US4833560A (en) * | 1987-06-26 | 1989-05-23 | Eastman Kodak Company | Self-biased magnetoresistive reproduce head |
DE3820475C1 (ko) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
-
1992
- 1992-11-17 US US07/977,382 patent/US5301079A/en not_active Expired - Lifetime
-
1993
- 1993-07-06 TW TW082105365A patent/TW225027B/zh active
- 1993-10-07 MY MYPI93002036A patent/MY110737A/en unknown
- 1993-10-15 KR KR1019930021386A patent/KR970008168B1/ko not_active IP Right Cessation
- 1993-10-20 CN CN93119325A patent/CN1058801C/zh not_active Expired - Fee Related
- 1993-11-12 JP JP5283071A patent/JP2725987B2/ja not_active Expired - Fee Related
- 1993-11-15 EP EP93309110A patent/EP0598581B1/en not_active Expired - Lifetime
- 1993-11-15 DE DE69326308T patent/DE69326308T2/de not_active Expired - Fee Related
- 1993-11-15 SG SG1996000779A patent/SG42330A1/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100440032B1 (ko) * | 2000-08-03 | 2004-07-14 | 닛뽕덴끼 가부시끼가이샤 | 자기저항효과 소자, 자기저항효과 헤드, 자기저항 변환시스템, 및 자기 기록 시스템 |
Also Published As
Publication number | Publication date |
---|---|
CN1103195A (zh) | 1995-05-31 |
DE69326308D1 (de) | 1999-10-14 |
MY110737A (en) | 1999-02-27 |
CN1058801C (zh) | 2000-11-22 |
DE69326308T2 (de) | 2000-04-20 |
KR970008168B1 (ko) | 1997-05-21 |
TW225027B (ko) | 1994-06-11 |
SG42330A1 (en) | 1997-08-15 |
JPH06203340A (ja) | 1994-07-22 |
US5301079A (en) | 1994-04-05 |
EP0598581A2 (en) | 1994-05-25 |
EP0598581B1 (en) | 1999-09-08 |
JP2725987B2 (ja) | 1998-03-11 |
EP0598581A3 (en) | 1995-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940012687A (ko) | 전류 바이어스된 자기 저항 스핀 밸브 센서 | |
US5818685A (en) | CIP GMR sensor coupled to biasing magnet with spacer therebetween | |
US5739988A (en) | Spin valve sensor with enhanced magnetoresistance | |
KR100267438B1 (ko) | 자기 저항 스핀 밸브 판독 센서 및 그를 포함한 자기 헤드 및자기 디스크 드라이브 | |
US7035062B1 (en) | Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments | |
US6437949B1 (en) | Single domain state laminated thin film structure | |
US5084794A (en) | Shorted dual element magnetoresistive reproduce head exhibiting high density signal amplification | |
US7477490B2 (en) | Single sensor element that is naturally differentiated | |
KR940020312A (ko) | 비자성 배면층을 갖는 자기 저항 스핀 밸브 센서 | |
US6191926B1 (en) | Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer | |
EP0797187A2 (en) | Spin valve magnetoresistive transducers having permanent magnets | |
KR100260804B1 (ko) | 박막 자기 헤드 | |
KR950020420A (ko) | 다층 자기저항 센서 | |
US6580587B1 (en) | Quad-layer GMR sandwich | |
KR960005450A (ko) | 스핀 밸브 자기저항 소자 및 그 제조방법, 스핀 밸브 자기저항 센서, 자기 기억 시스템, 자기 기록 디스크 드라이브 | |
KR970017217A (ko) | 이중 스핀 밸브 센서를 이용한 이중 저기저항 센서 | |
US20080102316A1 (en) | Magneto-resistive magnetic read head and storage apparatus using the same magnetic read head | |
US20070195452A1 (en) | Magnetic field sensor based on the extraordinary hall effect | |
KR0162119B1 (ko) | 엣지가 바이어스된 자기 저항 센서 | |
KR20020017893A (ko) | 자기 저항 센서, 자기 저항 헤드, 및 자기 기록/재생 장치 | |
US6222702B1 (en) | Magnetic read element shield having dimensions that minimize domain wall movement | |
US6134091A (en) | Spin-valve magneto-resistive head with horizontal type structure | |
US6169647B1 (en) | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer | |
KR0145034B1 (ko) | 자기 트랜스듀서와, 자기 트랜스듀서를 포함하는 매체 드라이브 | |
US6433973B1 (en) | GMR read sensors with non-uniform height |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19931015 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19931015 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
G160 | Decision to publish patent application | ||
PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19970424 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19970729 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19970826 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 19970826 End annual number: 3 Start annual number: 1 |
|
PR1001 | Payment of annual fee |
Payment date: 20000427 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20010621 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20020608 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20030613 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20040611 Start annual number: 8 End annual number: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20050714 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20060725 Start annual number: 10 End annual number: 10 |
|
FPAY | Annual fee payment |
Payment date: 20070727 Year of fee payment: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20070727 Start annual number: 11 End annual number: 11 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |