KR930007803A - 열에 안정하고 조밀한 전기 전도성 다이아몬드 콤팩트 - Google Patents
열에 안정하고 조밀한 전기 전도성 다이아몬드 콤팩트 Download PDFInfo
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- KR930007803A KR930007803A KR1019920018479A KR920018479A KR930007803A KR 930007803 A KR930007803 A KR 930007803A KR 1019920018479 A KR1019920018479 A KR 1019920018479A KR 920018479 A KR920018479 A KR 920018479A KR 930007803 A KR930007803 A KR 930007803A
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- Prior art keywords
- diamond
- boron
- silicon
- doped
- compact
- Prior art date
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract 28
- 239000010432 diamond Substances 0.000 title claims abstract 28
- 238000000034 method Methods 0.000 claims abstract 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract 11
- 229910052796 boron Inorganic materials 0.000 claims abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract 7
- 239000010703 silicon Substances 0.000 claims abstract 7
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000003054 catalyst Substances 0.000 claims abstract 5
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract 3
- 239000013078 crystal Substances 0.000 claims 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- 239000010941 cobalt Substances 0.000 claims 4
- 229910017052 cobalt Inorganic materials 0.000 claims 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910000521 B alloy Inorganic materials 0.000 claims 3
- PMVSDNDAUGGCCE-TYYBGVCCSA-L Ferrous fumarate Chemical compound [Fe+2].[O-]C(=O)\C=C\C([O-])=O PMVSDNDAUGGCCE-TYYBGVCCSA-L 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 150000001639 boron compounds Chemical class 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
- C04B35/6316—Binders based on silicon compounds
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
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- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
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- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
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Abstract
본 발명은 광범위하게 열에 안정하고 조밀한 전기 전도성 다이아몬드 콜팩트를 제조하는 방법에 관한 것이다.
본 방법은 약 1200℃를 실질적으로 넘지 않는 온도 및 약 45Kbar를 실질적으로 넘지 않는 압력을 포함하는 조건하에 붕소의 존재 하에서 다이아몬드 결정괴를 실리콘 침투제에 침투시킴을 포함한다. 생성된 콤팩트는 다이아몬드 대 다이아몬드 결합을 함유한다. 붕소는 붕소가 도핑된 다이아몬드의 형태로 제공될 수 있다. 다른 방법으로, 붕소―실리콘 합금을 붕소가 도핑되거나 또는 도핑 되지 않는 다이아몬드를 침투시키는데 사용할 수 있다. 또한, 침투시키기 위해 붕소를 실리콘과 함께 원자 붕소 또는 B₄C로 첨가할 수 있다. 다른 방법으로, 붕소 금속촉매+실리콘 합금을 붕소가 도핑된 다이아몬드에 사용할 수 있다. 상기 기법의 조합도 또한 사용할 수 있다. HP/HT공정에서, 실리콘은 다이아몬드 분말괴에 침투하여 실리콘과 다이아몬드-탄소의 반응에 의해 실리콘 카바이드로 이루어진 망상구조를 형성한다. 이 반응은 붕소가 도핑된 다이아몬드 또는 다이아몬드를 갖는 붕소 화합물로 이루어진 소결체 또는 실리콘 카바이드와 실리콘의 망상구조를 남긴다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (15)
- 약 1,200℃를 실질적으로 넘지 않는 온도; 및 약 45Kbar를 실질적으로 남지 않는 압력을 포함하는 조건하에 붕소의 존재 하에서 다이아몬드 결정괴를 실리콘 침투제에 침투시키는 단계를 포함하는 , 열에 안정하고 조밀한 전기 전도성 다이아몬드 콤팩트(생성된 콤팩트는 다이아몬드-대-다이아몬드 결합을 함유한다.)의 제조방법
- 제1항에 있어서. 상기 다이아몬드 결정이 붕소가 도핑된 다이아몬드 결정을 포함하는 방법.
- 제1항에 있어서. 상기 침투 제가 실리콘 붕소 합금 또는 실리콘 붕소 혼합물을 포함하는 방법
- 제1항에 있어서. 상기 다이아몬드 결정이 붕소 물질과 혼합되는 방법.
- 제1항에 있어서. 상기 온도가 약1,100℃ 내지 1,200℃의 범위인 방법.
- 제1항에 있어서. 상기 핌투가 다이아몬드 제조 촉매의 존재 하에서 수행되는 방법.
- 제6항에 있어서. 상기 다이아몬드 제조 촉매가 하나 이상의 철, 니켈 또는 코발트인 방법.
- 제7항에 있어서. 상기 침투제가 하나 이상의 철, 니켈 또는 코발트와 실리콘 합금 또는 혼합물을 포함하는 방법
- 제1항에 있어서. 상기 다이아몬드 결정이 약0.1내지 100μ 범위중 선택된 크기를 갖거나 또는 상기 크기의 혼합물인 방법.
- 제2항에 있어서. 상기 침투제가 실리콘 붕소 합금 또는 실리콘 붕소 혼합물을 포함하는 방법.
- 하나 이상의 다이아몬드 결정 또는 붕소가 도핑된 다이아몬드 결정의 괴약 70내지 95중량% 및 하나 이상의 Si또는 Sic 약5 내지 30중량%와 붕소가 도핑된 다이아몬드 결정, 붕소원자 또는 붕소 합금중 하나 이상의 형태의 붕소를 포함하는 열에 안정하고 조밀한 전기 전도성 다이아몬드 콤팩트.
- 제11항에 있어서. 상기 다이아몬드 결정이 붕소가 도핑된 다이아몬드 결정을 포함하는 콤팩트.
- 제11항에 있어서. 다이아몬드 제조 촉매를 또한 포함하는 콤팩트.
- 제13항에 있어서. 상기 다이아몬드 제조 촉매가 하나 이상의 철, 니켈 또는 코발트인 콤팩트.
- 제14항에 있어서. 상기 실리콘이 하나 이상의 철, 니켈 또는 코발트와 합금인 콤팩트.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US773,461 | 1991-10-09 | ||
US07/773,461 US5266236A (en) | 1991-10-09 | 1991-10-09 | Thermally stable dense electrically conductive diamond compacts |
Publications (1)
Publication Number | Publication Date |
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KR930007803A true KR930007803A (ko) | 1993-05-20 |
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ID=25098352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920018479A Withdrawn KR930007803A (ko) | 1991-10-09 | 1992-10-08 | 열에 안정하고 조밀한 전기 전도성 다이아몬드 콤팩트 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5266236A (ko) |
EP (1) | EP0537004A1 (ko) |
JP (1) | JPH05213700A (ko) |
KR (1) | KR930007803A (ko) |
CA (1) | CA2077825A1 (ko) |
ZA (1) | ZA927331B (ko) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677372A (en) * | 1993-04-06 | 1997-10-14 | Sumitomo Electric Industries, Ltd. | Diamond reinforced composite material |
US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US7323049B2 (en) | 1997-04-04 | 2008-01-29 | Chien-Min Sung | High pressure superabrasive particle synthesis |
US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US6039641A (en) * | 1997-04-04 | 2000-03-21 | Sung; Chien-Min | Brazed diamond tools by infiltration |
US9199357B2 (en) | 1997-04-04 | 2015-12-01 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US6679243B2 (en) | 1997-04-04 | 2004-01-20 | Chien-Min Sung | Brazed diamond tools and methods for making |
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US4643741A (en) * | 1984-12-14 | 1987-02-17 | Hongchang Yu | Thermostable polycrystalline diamond body, method and mold for producing same |
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WO1990001986A1 (en) * | 1988-08-17 | 1990-03-08 | The Australian National University | Diamond compact possessing low electrical resistivity |
ZA894689B (en) * | 1988-11-30 | 1990-09-26 | Gen Electric | Silicon infiltrated porous polycrystalline diamond compacts and their fabrications |
-
1991
- 1991-10-09 US US07/773,461 patent/US5266236A/en not_active Expired - Lifetime
-
1992
- 1992-09-09 CA CA002077825A patent/CA2077825A1/en not_active Abandoned
- 1992-09-24 ZA ZA927331A patent/ZA927331B/xx unknown
- 1992-09-29 JP JP4258766A patent/JPH05213700A/ja not_active Withdrawn
- 1992-10-08 KR KR1019920018479A patent/KR930007803A/ko not_active Withdrawn
- 1992-10-08 EP EP92309180A patent/EP0537004A1/en not_active Withdrawn
Also Published As
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US5266236A (en) | 1993-11-30 |
EP0537004A1 (en) | 1993-04-14 |
JPH05213700A (ja) | 1993-08-24 |
CA2077825A1 (en) | 1993-04-10 |
ZA927331B (en) | 1993-07-28 |
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