KR930002168B1 - 자기광 메모리 매체 - Google Patents
자기광 메모리 매체 Download PDFInfo
- Publication number
- KR930002168B1 KR930002168B1 KR1019900004632A KR900004632A KR930002168B1 KR 930002168 B1 KR930002168 B1 KR 930002168B1 KR 1019900004632 A KR1019900004632 A KR 1019900004632A KR 900004632 A KR900004632 A KR 900004632A KR 930002168 B1 KR930002168 B1 KR 930002168B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- magneto
- recording
- optical memory
- memory medium
- Prior art date
Links
- 230000000694 effects Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 5
- -1 rare earth transition metal Chemical class 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 120
- 150000004767 nitrides Chemical class 0.000 description 11
- 230000005291 magnetic effect Effects 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000001808 coupling effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims (6)
- 제1항에 있어서 기록 필름과 판독 필름의 각각은 500nm 또는 그 이하의 두께를 가진 자기광 메모리 매체.
- 제1항에 있어서 기록 필름과 판독 필름의 각각은 10∼100nm의 두께를 가진 자기광 메모리 매체.
- 제1항에 있어서 판독 필름은 유전 필름을 통해 투명기판 위에 적층되고 기록 필름은 그 판독 필름상에 적층되는 자기광 메모리 매체.
- 제4항에 있어서 기록 필름은 다른 유전 필름으로 덮혀져 있는 자기광 메모리 매체.
- 제1항에 있어서 단 파장 레이저 빔을 사용한 기록 및/또는 재생 정보에 사용되는 자기광 메모리 매체.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1089318A JP2685888B2 (ja) | 1989-04-07 | 1989-04-07 | 磁気光学記録媒体 |
JP1-89318 | 1989-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900016974A KR900016974A (ko) | 1990-11-15 |
KR930002168B1 true KR930002168B1 (ko) | 1993-03-27 |
Family
ID=13967317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900004632A KR930002168B1 (ko) | 1989-04-07 | 1990-04-04 | 자기광 메모리 매체 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930002168B1 (ko) |
-
1990
- 1990-04-04 KR KR1019900004632A patent/KR930002168B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR900016974A (ko) | 1990-11-15 |
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