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KR920021203A - 진공처리장치 - Google Patents

진공처리장치 Download PDF

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Publication number
KR920021203A
KR920021203A KR1019920009321A KR920009321A KR920021203A KR 920021203 A KR920021203 A KR 920021203A KR 1019920009321 A KR1019920009321 A KR 1019920009321A KR 920009321 A KR920009321 A KR 920009321A KR 920021203 A KR920021203 A KR 920021203A
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South Korea
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conveying
vacuum processing
processing apparatus
openings
stations
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KR1019920009321A
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KR100247597B1 (ko
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셰르틀러 로만
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베.카우프만, 우.베그만
발쩌스 악티엔게젤샤프트
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Publication of KR920021203A publication Critical patent/KR920021203A/ko
Priority to KR1019970020286A priority Critical patent/KR100247599B1/ko
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04Pressure vessels, e.g. autoclaves
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49998Work holding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/51Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5124Plural diverse manufacturing apparatus including means for metal shaping or assembling with means to feed work intermittently from one tool station to another
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/51Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5196Multiple station with conveyor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Processing Of Solid Wastes (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Manipulator (AREA)

Abstract

내용 없음.

Description

진공처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 진공처리장치를 도시한 횡단면도,
제3도는 원추형개구각(Ø= 90°)을 가진 제2도 또는 제4도에 도시된 장치를 도시한 부분단면도,
제4도는 제3도에 도시된 장치를 공간축방향으로 개략적으로 도시한 상면도.

Claims (14)

  1. 적어도 하나의 목적물을 진공처리하는 장치로서, 적어도 하나이상의 목적물용 개구(21,25)가 제공되어 있는 적어도 2개 이상의 스테이션(7,27)과 회전축으로서의 공간축(A) 둘레를 회전할 수 있게 장착되어 구동(1)되며, 적어도 2개 이상의 목적물용 운반부분(19)이 제공되어 있고, 이러한 운반부분(19)이 스테이션(7,27)의 개구(21,25)에서 순차적으로 이동할 수 있는 운반장치(3,5,19,23)및 운반장치들을 개별적으로 개구(21,25) 쪽으로 또는 개구로 부터 이동시키기 위한 구동수단 등이 제공되어 있는 진공처리장치에 있어서, 구동수단이 운반장치(3,5,19,23)에 배치되어 있는 것을 특징으로 하는 진공처리장치.
  2. 제1항에 있어서, 개구(13,25)의 표면법선(A13, A27)이 공간축(A)에 대하여 평행으로 되어있지 아니한 것을 특징으로 하는 진공처리장치.
  3. 제2항에 있어서, 운반부분이 공간축(A)에 대하여 축평행으로 또는 방사상으로 전진 또는 후진할 수 있는 것을 특징으로 하는 진공처리장치.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 개구(21,25)중 하나의 운반장치가 서로 대향하여 배치되어 있고, 이렇한 개구의 표면법선(A13, A27) 방향으로 전진 또는 후진하는 것을 특징으로 하는 진공처리장치.
  5. 제1항 내지 제4항중 어느 한 항에 있어서, 운반장치가 공간축(A)둘레를 회전할 때, 주어진 개구부(Ø≤90°)으로 원추면(31)을 스쳐가는 것을 특징으로 하는 진공처리장치.
  6. 제5항에 있어서, 개구표면법선(A13, A27) 이 원추면 모선 방향으로 향하여 있는 것을 특징으로 하는 진공처리장치.
  7. 제6항에 있어서, 개구(13,35)가 원추대원(33)에 따라 배치되어 있는 것을 특징으로 하는 진공처리장치.
  8. 제1항 내지 제7항중 어느 한 항에 있어서, 운반장치(3,5,19,23)에 공간축(A)둘레를 회전할 수 있게 장착되어 있는 적어도 2개의 운반암(5)이 포함되어 있는 것을 특징으로 하는 진공처리장치.
  9. 제1항 내지 제8항중 어느 한 항에 있어서, 스테이션(7,27)이 운반장치(3,5,19,23)를 그안에 들어있는 챔버(K)내로 개구를 거쳐 유입되는 것을 특징으로 하는 진공처리장치.
  10. 제9항에 있어서, 가스공급장치 또는 흡인여과장치가 스테이션(7,27)중 하나 또는 챔버(K)에 제공되어 있는 것을 특징으로 하는 진공처리장치.
  11. 제1항 내지 제10항중 어느 한 항에 있어서, 적어도 하나 이상의 운반부분에 개구중 적어도 하나를 밀폐시킬 수 있는 패킹(19)이 포함되어 있는 것을 특징으로 하는 진공처리장치.
  12. 제1항 내지 제11항중 어느 한 항에 있어서, 운반부분에 중앙개구가 제공되어 있는 디스크 모양의 목적물의 위치를 정하기 위한 페그와 목적물용의 지지장치 및 방사상으로 작용하는 스트링장치(25,26)가 제공되어 있는 것을 특징으로 하는 진공처리장치.
  13. 제1항 내지 제12항중 어느 한 항에 의한 장치의 CD 또는 자기 광학적 메모리판 디스크의 처리용으로의 이용.
  14. 중앙개구가 있는 디스크 모양의 목적물을 진공처리할 때, 이를 지지하기 위한 지지물로서, 지지판(29)에 그 표면 위로 돌출하고, 스프링이 걸려있고, 볼록하게 구부려져 있는 부분(26)이 달린 돌출 페그(22)가 제공되어 있는 것을 특징으로 하는 지지물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920009321A 1991-05-31 1992-05-29 진공처리장치 KR100247597B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019970020286A KR100247599B1 (ko) 1991-05-31 1997-05-23 진공 처리 장치용 폐쇄 운반실

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4117969A DE4117969C2 (de) 1991-05-31 1991-05-31 Vakuumkammer
DEP4117969.2 1991-05-31

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KR1019970020286A Division KR100247599B1 (ko) 1991-05-31 1997-05-23 진공 처리 장치용 폐쇄 운반실

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KR920021203A true KR920021203A (ko) 1992-12-18
KR100247597B1 KR100247597B1 (ko) 2000-03-15

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US (3) US5245736A (ko)
EP (1) EP0518109B1 (ko)
JP (1) JPH0763612B2 (ko)
KR (1) KR100247597B1 (ko)
AT (1) ATE162854T1 (ko)
DE (2) DE4117969C2 (ko)

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* Cited by examiner, † Cited by third party
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DE4139507A1 (de) * 1991-02-23 1992-08-27 Bernd Plickert Montagevorrichtung fuer plattenfoermige elemente
CH691377A5 (de) * 1992-10-06 2001-07-13 Unaxis Balzers Ag Kammeranordnung für den Transport von Werkstücken und deren Verwendung.
GB2272225B (en) * 1992-10-06 1996-07-17 Balzers Hochvakuum A method for masking a workpiece and a vacuum treatment facility
EP1179611B1 (de) 1992-10-06 2004-09-15 Unaxis Balzers Aktiengesellschaft Kammer für den Transport von Werkstücken
DE4235677C2 (de) * 1992-10-22 1996-10-31 Balzers Hochvakuum Vakuumkammer, Vakuumbehandlungsanlage mit einer solchen Kammer sowie Transportverfahren
US5400317A (en) * 1993-04-01 1995-03-21 Balzers Aktiengesellschaft Method of coating a workpiece of a plastic material by a metal layer
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
NL1000138C2 (nl) * 1995-04-13 1996-10-15 Od & Me Bv Inrichtingen voor het bewerken van een substraat alsmede werkwijze geschikt voor toepassing bij dergelijke inrichtingen.
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EP0518109B1 (de) 1998-01-28
DE4117969C2 (de) 2000-11-09
DE4117969A1 (de) 1992-12-03
JPH05184903A (ja) 1993-07-27
JPH0763612B2 (ja) 1995-07-12
US5245736A (en) 1993-09-21
ATE162854T1 (de) 1998-02-15
KR100247597B1 (ko) 2000-03-15
USRE40191E1 (en) 2008-04-01
EP0518109A1 (de) 1992-12-16
USRE40192E1 (en) 2008-04-01
DE59209160D1 (de) 1998-03-05

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