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KR920010957A - 박막 반도체 장치 - Google Patents

박막 반도체 장치 Download PDF

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Publication number
KR920010957A
KR920010957A KR1019910021949A KR910021949A KR920010957A KR 920010957 A KR920010957 A KR 920010957A KR 1019910021949 A KR1019910021949 A KR 1019910021949A KR 910021949 A KR910021949 A KR 910021949A KR 920010957 A KR920010957 A KR 920010957A
Authority
KR
South Korea
Prior art keywords
gate electrode
channel
insulating film
semiconductor layer
gate insulating
Prior art date
Application number
KR1019910021949A
Other languages
English (en)
Other versions
KR950003943B1 (ko
Inventor
다까유끼 시마다
도시히로 야마시따
야스히로 마쯔시마
요지 요시무라
유따까 다까후지
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2338879A external-priority patent/JPH04206971A/ja
Priority claimed from JP2338880A external-priority patent/JP2846736B2/ja
Application filed by 쯔지 하루오, 샤프 가부시끼가이샤 filed Critical 쯔지 하루오
Publication of KR920010957A publication Critical patent/KR920010957A/ko
Application granted granted Critical
Publication of KR950003943B1 publication Critical patent/KR950003943B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

박막 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제1실시예의 박막(thin-film) 반도체 장치의 평면도, 제2도는 제1도의 A-A' 선 단면도, 제3도는 본 발명에 따른 제2실시예의 박막 반도체 장치의 평면도.

Claims (6)

  1. 기판,기판위에 형성된 제1 및 제2반도체 층, 제1반도체 층에 형성된 제1채널 영역, 제1채널 영역에 형성된 제1게이트 절연 막, 및 제1게이트 절연막에 형성된 제1게이트 전극을 포함하는 n형 박막 트랜지스터, 제2반도체 층에 형성된 제2채널 영역, 제2채널 영역에 형성된 제2게이트 절연막 및 제2게이트 절연막에 형성된 제2게이트 전극을 포함하는 p형 박막 트랜지스터로 구성되고, 상기 제1 및 제2게이트 전극중 적어도 하나가 채널 길이 방향을 따라 간격진 복수개의 게이트 전극 섹션을 포함하는 박막 반도체 장치.
  2. 기판, 기판위에 형성된 제1 및 제2반도체 층, 제1반도체 층에 형성된 제1채널 영역, 제1채널 영역에 형성된 제1소오스 영역, 제1반도체 층에 형성된 제1드레인영역, 제1채널영역에 형성된 제1게이트 절연막, 및 제1게이트 절연막에 형성된 제1게이트 전극을 포함하는 n형 박막 트랜지스터, 제2반도체 층에 형성된 제2채널영역, 제1반도체 층에 형성된 제2소오스영역, 제1반도체 층에 형성된 제2드레인 영역, 제2채널 영역에 형성된 제2게이트 절연막, 및 제2게이트 절연막에 형성된 제2게이트 전극을 포함하고, 상기 제2드레인 영역이 제1드레인 영역에 연결되고, 제2게이트 전극이 제1게이트 전극에 연결되며, 제1 및 제2게이트 전극중 적어도 하나가 채널 길이 방향을 따라 간격진 복수개의 게이트 전극 섹션을 포함하는 박막 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 상기 복수개의 게이트 전극 섹션을 갖는 적어도 하나의 게이트 전극 아래에 있는 적어도 하나의 제1 및 제2채널 영역이 채널 길이 방향을 따라 간격진 복수개의 채널 부영역을 포함하고, 채널 부영역이 각각의 게이트 전극 섹션을 대면하고 있는 박막 반도체.
  4. 기판, 기판위에 형성된 제1 및 제2반도체 층, 제1반도체 층에 형성된 제1채널 영역, 제1채널 영역에 형성된 제1소오스 영역, 제1반도체 층에 형성된 제1드레인영역, 제1채널영역에 형성된 제1게이트 절연막, 및 제1게이트 절연막에 형성된 제1게이트 전극을 포함하는 n형 박막 트랜지스터, 제2반도체 층에 형성된 제2채널영역, 제1반도체 층에 형성된 제2소오스영역, 제1반도체 층에 형성된 제2드레인 영역, 제2채널 영역에 형성된 제2게이트 절연막, 및 제2게이트 절연막에 형성된 제2게이트 전극을 포함하고, 상기 제2드레인 영역이 제1드레인 영역에 연결되고, 제2게이트 전극이 제1게이트 전극에 연결되며, 제1 및 제2게이트 전극중 적어도 하나채널 길이 방향을 따라 간격진 복수개의 게이트 전극 섹션을포함하고, 제1채널 부영역이 P형 불순물로 도핑되는 박막 반도체 장치.
  5. 제4항에 있어서, 상기 복수개의 게이트 전극 섹션을 갖는 적어도 하나의 게이트 전극 아래에 있는 적어도 하나의 제1 및 제2채널 영역이 채널 길이 방향을 따라 간격진 복수개의 채널 부영역을 포함하고, 채널 부영역이 각각의 게이트 전극 섹션을 대면하고 있는 박막 반도체 장치.
  6. p형 박막 트랜지스터의 제2소오스 및 드레인 영역이 p형 불순몰로 도핑된 박막 반도체 장치.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019910021949A 1990-11-30 1991-11-30 박막 반도체 장치 KR950003943B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP90-338880 1990-11-30
JP2338879A JPH04206971A (ja) 1990-11-30 1990-11-30 薄膜半導体装置
JP90-338879 1990-11-30
JP2338880A JP2846736B2 (ja) 1990-11-30 1990-11-30 薄膜半導体装置

Publications (2)

Publication Number Publication Date
KR920010957A true KR920010957A (ko) 1992-06-27
KR950003943B1 KR950003943B1 (ko) 1995-04-21

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Country Status (4)

Country Link
US (1) US5528056A (ko)
EP (1) EP0488801B1 (ko)
KR (1) KR950003943B1 (ko)
DE (1) DE69128876T2 (ko)

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Publication number Publication date
US5528056A (en) 1996-06-18
DE69128876D1 (de) 1998-03-12
DE69128876T2 (de) 1998-08-06
EP0488801A1 (en) 1992-06-03
EP0488801B1 (en) 1998-02-04
KR950003943B1 (ko) 1995-04-21

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