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KR920008851A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR920008851A
KR920008851A KR1019910018207A KR910018207A KR920008851A KR 920008851 A KR920008851 A KR 920008851A KR 1019910018207 A KR1019910018207 A KR 1019910018207A KR 910018207 A KR910018207 A KR 910018207A KR 920008851 A KR920008851 A KR 920008851A
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South Korea
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silicon oxide
oxide film
semiconductor substrate
convex pattern
forming
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KR1019910018207A
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English (en)
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마사스미 마쓰우라
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920008851A publication Critical patent/KR920008851A/ko

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

내용 없음

Description

반도제장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 관한 반도체장치의 단면도이다.
제2A도∼제2F도는 제1도에 표시하는 반도체장치의 제조공정을 단면도로 표시한 것이다.
제3도는 TEOS/03를 사용하는 상압 CVD법에 의하여, 실리콘산화막이 형성되는 모양이 모식적으로 표시한 도면이다.

Claims (2)

  1. 반도체기판과, 상기 반도체기판의 위에 형성된 오목볼록패턴과, 상기 오목볼록패턴의 표면을 피복하도록 상기 반도체기판의 위에 형성된 내크랙성이 우수한 제1의 실리콘산화막과, 상기 제1의 실리콘산화막의 표면에 존재하는 오목부를 메꾸고, 또한 상기 오목볼록패턴을 덮도록 상기 제1의 실리콘 산화막의 위에 퇴적된 스텝커버리지성이 우수한 제2의 실리콘산화막과, 상기 제2의 실리콘산화막의 표면을 평탄화하기 위하여 상기 제2의 실리콘산화막의 표면에 존재하는 오목부에 메꾸어진 매입특성이 우수한 제3의 실리콘산화막과, 상기 제2의 실리콘산화막 및 상기 제3의 실리콘 산화막을 포함하는 상기 반도체기판의 위에 형성된 제4의 실리콘산화막과를 구비한 반도체장치.
  2. 반도체기판의 위에 오목보록 패턴을 형성하는 공정과, 상기 오목볼록패턴의 표면을 피복하도록 상기 반도체 기판의 위에 내크택성이 우수한 제1의 실리콘산화막을 형성하는 공정과, 상기 오목볼록패턴의 오목부를 메꾸고, 또한 해당오목볼록 패턴을 덮도록 상기 제1의 실리콘산화막의 위에 스텝커버리지성이 우수한 제2의 실리콘산화막을 퇴적하는 공정과, 상기 제2의 실리콘산화막을 소정의 막두께로 될때까지 에칭하는 공정과, 엥칭후의 상기 제2의 실리콘산화막의 표면에 존재하느 오목부에 매입특성이 우수한 제3의 실리콘산화막을 매입하는 공정과 상기 제2의 실리콘 산화막 및 상기 제3의 실리콘산화막을 포함하는 상기 반도체기판의 위에 제4의 실리콘산화막을 형성하는 공정과, 를 구비한 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018207A 1990-10-30 1991-10-16 반도체장치 및 그 제조방법 KR920008851A (ko)

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Application Number Priority Date Filing Date Title
JP90-294423 1990-10-30
JP2294423A JP2640174B2 (ja) 1990-10-30 1990-10-30 半導体装置およびその製造方法

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KR100450428B1 (ko) * 2000-11-10 2004-10-01 정헌영 두부제조용 대두건조분말 및 그 제조방법
KR101036980B1 (ko) * 2008-09-12 2011-05-25 주식회사 동성식품 탈피대두분을 이용한 고품질 면 제조방법

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US5319247A (en) 1994-06-07
US5721156A (en) 1998-02-24
US5459105A (en) 1995-10-17
JP2640174B2 (ja) 1997-08-13

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