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KR900001131A - 반도체 집적회로의 출력회로 - Google Patents

반도체 집적회로의 출력회로 Download PDF

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Publication number
KR900001131A
KR900001131A KR1019890007412A KR890007412A KR900001131A KR 900001131 A KR900001131 A KR 900001131A KR 1019890007412 A KR1019890007412 A KR 1019890007412A KR 890007412 A KR890007412 A KR 890007412A KR 900001131 A KR900001131 A KR 900001131A
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KR
South Korea
Prior art keywords
conductive
mos transistor
conductive type
mos
transistors
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Application number
KR1019890007412A
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English (en)
Other versions
KR920004341B1 (ko
Inventor
마사노리 기누가사
후미나리 다나카
사토시 노나카
무네노부 기다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR900001131A publication Critical patent/KR900001131A/ko
Application granted granted Critical
Publication of KR920004341B1 publication Critical patent/KR920004341B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H03K19/09429—Multistate logic one of the states being the high impedance or floating state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)

Abstract

내용 없음

Description

반도체 집적회로의 출력회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체 집적회로의 출력회로를 나타낸 회로도,
제2도는 제1도에 도시된 회로의 입력신호가 “L”로부터 “H”로 변환되는 경우 제1출력노드 및 제2출력노드의 전압파형을 나타낸 도면,
제3도는 제1도에 도시된 회로의 입력신호가 “H”로부터 “L”로 변환되는 경우 제1출력노드 및 제2출력노드의 전압파형을 나타낸 도면.

Claims (2)

  1. 제1전원(VDD)전원과 제2전원(집지전위)사이에 직렬로 접속된 출력버퍼용 제1도전형 제1MOS트랜지스터(P1) 및 제2도전형 제1MOS트랜지스터(N1)와, 상기 2개의 MOS트랜지스터(P1,N1)사이에 접속되면서 상호 병렬로 접속된 제1도전형 제2MOS트랜지스터(P2)와 제2도전형 제2MOS트랜지스터(N2) 및, 상기 제1전원과 상기 제1도전형 제1MOS트랜지서터(P1)의 사이에 접속된 1개의 제1도전형 제3MOS트랜지스터(P3) 또는 복수의 제1도전형 제3트랜지스터로 이루어져 신호입력용으로 사용되는 제1논리소자부(61)와 ; 상기 제2도전형 제1MOS트랜지스터(N1)와 상기 제2전원사이에 접속된 1개의 제2도전형 제3MOS트랜지스터(N3) 또는 복수의 제2도전형 제3MOS트랜지스터로 이루어져 신호입력용으로 사용되는 제2논리소자부(62)를 구비하고 ; 상기 제1도전형 및 제2도전형 제2NOS트랜지스터(P2, N3)의 챈널폭보다도 작게 설정된 것을 특징으로 하는 반도체 집적회로의 출력회로.
  2. 제1항에 있어서, 상기 제1전원과 상기 제1도전형 제1MOS트랜지스터(P1)사이에 제1도전형 제4MOS트랜지스터(P4)가 접속되며, 상기 제1도전형 제1MOS트랜지스터(P1)와 상기 제2전원사이에 제2도전형의 제4MOS트랜지스터(P4)가 접속되며, 상기 제1도전형의 제4MOS트랜지스터(N4)와 상기 제2도전형 제2MOS트랜지스터(N2)의 각 게이트에 출력제어신호(EN)가 공급되고, 상기 제2도전형의 제4MOS트랜지스터(N4)와 상기 제1도전형의 제2MOS트랜지스터(P2)의 각 게이트에 상기 출력제어신호(EN)와는 상보적인 출력제어신호가 공급되며, 상기 제1도전형 및 제2도전형의 제2MOS트랜지스터(P2, N2)의 챈널폭이 상기 제1 및 제2도전형의 제3MOS트랜지스터(P3, N3)의 챈널폭보다도 작으면서 상기 제1 및 제2도전형의 제4MOS트랜지스터(P4, N4)의 챈널폭보다도 작게 설정된 것을 특징으로 하는 반도체 집적회로의출력회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007412A 1988-06-02 1989-05-31 반도체집적회로의 출력회로 KR920004341B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-136366 1988-06-02
JP63136366A JPH01305616A (ja) 1988-06-02 1988-06-02 半導体集積回路の出力回路

Publications (2)

Publication Number Publication Date
KR900001131A true KR900001131A (ko) 1990-01-31
KR920004341B1 KR920004341B1 (ko) 1992-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007412A KR920004341B1 (ko) 1988-06-02 1989-05-31 반도체집적회로의 출력회로

Country Status (4)

Country Link
US (1) US5034629A (ko)
EP (1) EP0344604A3 (ko)
JP (1) JPH01305616A (ko)
KR (1) KR920004341B1 (ko)

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KR100449364B1 (ko) * 1997-08-07 2004-12-04 삼성전자주식회사 인터럽트처리장치

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Also Published As

Publication number Publication date
KR920004341B1 (ko) 1992-06-01
EP0344604A3 (en) 1990-04-25
US5034629A (en) 1991-07-23
JPH01305616A (ja) 1989-12-08
EP0344604A2 (en) 1989-12-06

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