KR890002065B1 - 단결정 육성장치 및 단결정 육성방법 - Google Patents
단결정 육성장치 및 단결정 육성방법 Download PDFInfo
- Publication number
- KR890002065B1 KR890002065B1 KR1019850005445A KR850005445A KR890002065B1 KR 890002065 B1 KR890002065 B1 KR 890002065B1 KR 1019850005445 A KR1019850005445 A KR 1019850005445A KR 850005445 A KR850005445 A KR 850005445A KR 890002065 B1 KR890002065 B1 KR 890002065B1
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- raw material
- magnetic field
- coils
- material melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (8)
- 용기(16a,16b)내의 단결정원료를 가열수단(3)에 의해서 가열하여 원료융액(1)을 만들어, 이 원료융액중에 종결정(4)을 삽입하여, 이 종결정을 인산(引上)구동기구(5)에 의해서 어느 일정속도로 인상해서 고체와 액체 계면 경계층(6)에 단결정이 육성되는 단결정 육성장치에 있어서, 상기 원료융액이 충전되어 있는 도가니(2)를 통해서 서로 대향하는 코일(15a,15b)에 의해서 발생하는 자계가 서로의 자계를 상쇄하도록 배치한 자석장치로 되고, 적어도 소정기간 상기 고체와 액체 계면 경계층(6) 근방의 열대류(8)를 억제하도록 상기 자석장치에 의한 인가자계강도 및 자계분포를 변화하는 것을 특징으로 하는 단결정 육성장치.
- 서로 대향 코일(15a,15b)은 초전도코일로 하는 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 서로 대향하는 코일(15a,15b)의 축을 단결정 인상방향에 대해서 수직으로 한 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 서로 대향하는 코일(15a,15b)의 축을 단결정 인상방향에 대해서 평행으로 한 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 서로 대향하는 코일(15a,15b)의 각 권회수를 다르게 한 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 상하 구동장치(25) 혹은 코일간격 조정장치(24)에 의해서 전기자석장치에 의한 인가자계 강도 혹은 자계분포를 가변제어하는 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 서로 대향하는 코일(15a,15b)의 통전전류를 제어함으로써 전기자석장치에 의한 인가자계강도 혹은 자계분포를 가변 제어하는 것을 특징으로 하는 특허청구의 범위 제(1)항 기재의 단결정 육성장치.
- 용기내의 단결정원료를 가열수단에 의해서 가열하여 원료융액을 만들어, 이 원료융액중에 종결정을 삽입하여, 이 종결정을 인산구동기구에 의해서 어느 일정속도로 인상해서 고체와 액체 계면 경계층에서 단결정이 육성됨과 동시에, 상기 원료융액이 충전되어 있는 도가니를 통해서 서로 대향하는 코일에 의해서 발생하는 자계가 서로의 자계를 상쇄하도록 배치한 자석장치를 구비한 단결정 육성장치를 사용해서, 단결정 육성에 따른 원료융액의 감소에 대응해서, 원료융액 열대류 억제영역의 융적이 일정하게 되도록 상기 자석장치의 자계분포를 제어하고, 상기 융액이 감소하여 열대류 효과가 존재할 수 있는 최소융액 용적으로 될때까지 이의 제어를 계속하고, 그 이후는 상기 원료융액 전역의 열대류를 억제하는 상기 자석장치가 일정한 자계분포로 되도록 제어하는 것을 특징으로 하는 단결정 육성방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59167514A JPS6144797A (ja) | 1984-08-10 | 1984-08-10 | 単結晶育成装置およびその制御方法 |
JP59-167514 | 1984-08-10 | ||
JPP59-167514 | 1984-08-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860001905A KR860001905A (ko) | 1986-03-24 |
KR890002065B1 true KR890002065B1 (ko) | 1989-06-15 |
Family
ID=15851093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850005445A Expired KR890002065B1 (ko) | 1984-08-10 | 1985-07-29 | 단결정 육성장치 및 단결정 육성방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4830703A (ko) |
JP (1) | JPS6144797A (ko) |
KR (1) | KR890002065B1 (ko) |
CN (1) | CN85106561A (ko) |
DE (1) | DE3528674A1 (ko) |
GB (1) | GB2163672B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011111907A1 (ko) * | 2010-03-10 | 2011-09-15 | 퀄리플로나라테크(주) | 단결정 실리콘 잉곳 성장 시스템용 마그네트 수직 이송 장치 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8718643D0 (en) * | 1987-08-06 | 1987-09-09 | Atomic Energy Authority Uk | Single crystal pulling |
JP2651481B2 (ja) * | 1987-09-21 | 1997-09-10 | 株式会社 半導体エネルギー研究所 | 超伝導材料の作製方法 |
JPH0190790U (ko) * | 1987-12-08 | 1989-06-14 | ||
JPH0650458Y2 (ja) * | 1987-12-08 | 1994-12-21 | 株式会社大倉製作所 | クレーン用ペンダントスイッチ |
GB2234193B (en) * | 1988-03-08 | 1991-11-13 | Secr Defence | Growing semiconductor crystalline materials |
GB8805478D0 (en) * | 1988-03-08 | 1988-04-07 | Secr Defence | Method & apparatus for growing semi-conductor crystalline materials |
JPH0431386A (ja) * | 1990-05-25 | 1992-02-03 | Shin Etsu Handotai Co Ltd | 半導体単結晶引上方法 |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
US5162072A (en) * | 1990-12-11 | 1992-11-10 | General Electric Company | Apparatus and method for control of melt flow pattern in a crystal growth process |
US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
US5178720A (en) * | 1991-08-14 | 1993-01-12 | Memc Electronic Materials, Inc. | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
JPH08143391A (ja) * | 1993-06-01 | 1996-06-04 | Texas Instr Inc <Ti> | チョクラルスキ結晶引上げ装置に使用する螺旋加熱器 |
US5394830A (en) * | 1993-08-27 | 1995-03-07 | General Electric Company | Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process |
JP3019683B2 (ja) * | 1993-09-20 | 2000-03-13 | 株式会社日立製作所 | 永久電流スイッチ及び超電導マグネットシステム |
US5560759A (en) * | 1994-11-14 | 1996-10-01 | Lucent Technologies Inc. | Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom |
JP2760957B2 (ja) | 1995-03-24 | 1998-06-04 | 科学技術振興事業団 | 融液中の対流場を制御した単結晶育成方法 |
JP2940437B2 (ja) * | 1995-06-01 | 1999-08-25 | 信越半導体株式会社 | 単結晶の製造方法及び装置 |
JPH0920595A (ja) * | 1995-07-04 | 1997-01-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造装置 |
JP3402041B2 (ja) * | 1995-12-28 | 2003-04-28 | 信越半導体株式会社 | シリコン単結晶の製造装置 |
JP3520883B2 (ja) * | 1995-12-29 | 2004-04-19 | 信越半導体株式会社 | 単結晶の製造方法 |
US5935327A (en) * | 1996-05-09 | 1999-08-10 | Texas Instruments Incorporated | Apparatus for growing silicon crystals |
GB9617540D0 (en) * | 1996-08-21 | 1996-10-02 | Tesla Engineering Ltd | Magnetic field generation |
JPH10130100A (ja) * | 1996-10-24 | 1998-05-19 | Komatsu Electron Metals Co Ltd | 半導体単結晶の製造装置および製造方法 |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
WO2000055393A1 (fr) * | 1999-03-17 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Appareil et procede de production d'un cristal unique de silicium, cristal unique et tranche obtenus selon ce procede |
JP4358380B2 (ja) * | 1999-09-28 | 2009-11-04 | 住友重機械工業株式会社 | 磁界中熱処理装置 |
SE9903675D0 (sv) * | 1999-10-13 | 1999-10-13 | Abb Research Ltd | A device and a method for heat treatment of an object in a susceptor |
US7031160B2 (en) * | 2003-10-07 | 2006-04-18 | The Boeing Company | Magnetically enhanced convection heat sink |
JP4710247B2 (ja) | 2004-05-19 | 2011-06-29 | 株式会社Sumco | 単結晶製造装置及び方法 |
US20060005761A1 (en) * | 2004-06-07 | 2006-01-12 | Memc Electronic Materials, Inc. | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length |
US7291221B2 (en) * | 2004-12-30 | 2007-11-06 | Memc Electronic Materials, Inc. | Electromagnetic pumping of liquid silicon in a crystal growing process |
US7223304B2 (en) * | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
WO2008099611A1 (ja) | 2007-02-14 | 2008-08-21 | Gogou Co., Ltd. | 移動制御方法、移動操作装置及び移動体の移動を操作する方法 |
US20100050929A1 (en) * | 2008-08-27 | 2010-03-04 | Accel Instruments Gmbh | Coil Arrangement for Crystal Pulling and Method of Forming a Crystal |
CN104534879B (zh) * | 2015-01-14 | 2016-06-08 | 中国科学院合肥物质科学研究院 | 同步辐射μ-XRD技术原位测量熔融法晶体生长微观结构的方法和微型晶体生长炉 |
CN109811403A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
JP6872041B2 (ja) * | 2017-12-06 | 2021-05-19 | 浙江▲藍▼天▲環▼保高科技股▲分▼有限公司 | 2,3−ジクロロ−5−トリフルオロメチルピリジンの高選択的な製造方法 |
CN114232078A (zh) * | 2021-11-16 | 2022-03-25 | 浙江大学杭州国际科创中心 | 一种单晶炉的铱坩埚加热装置和单晶生长的方法 |
CN117822126B (zh) * | 2024-03-02 | 2024-06-04 | 山东华特磁电科技股份有限公司 | 一种磁拉晶永磁装置 |
Family Cites Families (14)
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NL206524A (ko) * | 1955-08-26 | |||
BE625139A (ko) * | 1961-11-23 | |||
US3607139A (en) * | 1968-05-02 | 1971-09-21 | Air Reduction | Single crystal growth and diameter control by magnetic melt agitation |
US3798007A (en) * | 1969-12-05 | 1974-03-19 | Ibm | Method and apparatus for producing large diameter monocrystals |
JPS6033797B2 (ja) * | 1981-04-15 | 1985-08-05 | 三菱化成ポリテック株式会社 | 単結晶の成長方法 |
JPS58217493A (ja) * | 1982-06-11 | 1983-12-17 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶の引上方法 |
JPS6027682A (ja) * | 1983-07-26 | 1985-02-12 | Toshiba Corp | 単結晶引上装置 |
US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
JPH0627682A (ja) * | 1992-07-08 | 1994-02-04 | Mitsubishi Paper Mills Ltd | 平版印刷版の現像装置および現像方法 |
JP3255713B2 (ja) * | 1992-07-14 | 2002-02-12 | 川崎製鉄株式会社 | 表面明度の高いクロムめっき鋼板 |
JPH0636392A (ja) * | 1992-07-17 | 1994-02-10 | Matsushita Electric Ind Co Ltd | 磁気記録再生装置 |
JPH0651690A (ja) * | 1992-07-28 | 1994-02-25 | Brother Ind Ltd | 電子学習機 |
JP2645202B2 (ja) * | 1992-07-31 | 1997-08-25 | 株式会社東芝 | プラント模擬装置 |
-
1984
- 1984-08-10 JP JP59167514A patent/JPS6144797A/ja active Pending
-
1985
- 1985-07-29 KR KR1019850005445A patent/KR890002065B1/ko not_active Expired
- 1985-08-07 GB GB08519805A patent/GB2163672B/en not_active Expired
- 1985-08-09 DE DE19853528674 patent/DE3528674A1/de active Granted
- 1985-08-31 CN CN198585106561A patent/CN85106561A/zh active Pending
-
1987
- 1987-05-18 US US07/051,194 patent/US4830703A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011111907A1 (ko) * | 2010-03-10 | 2011-09-15 | 퀄리플로나라테크(주) | 단결정 실리콘 잉곳 성장 시스템용 마그네트 수직 이송 장치 |
Also Published As
Publication number | Publication date |
---|---|
GB2163672A (en) | 1986-03-05 |
KR860001905A (ko) | 1986-03-24 |
US4830703A (en) | 1989-05-16 |
CN85106561A (zh) | 1987-03-25 |
DE3528674A1 (de) | 1986-02-13 |
JPS6144797A (ja) | 1986-03-04 |
DE3528674C2 (ko) | 1988-12-29 |
GB8519805D0 (en) | 1985-09-11 |
GB2163672B (en) | 1987-07-29 |
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