KR20240011213A - Film forming apparatus, film forming method and manufacturing method of electronic device - Google Patents

Abstract

The present invention relates to a film forming apparatus, which can effectively perform substrate separation from an electrostatic chuck. The film forming apparatus of the present invention, which forms a film forming material on a substrate through a mask, comprises: first and second substrate support parts which are disposed in a chamber, support a first perimeter part of the substrate and a second perimeter part facing the first perimeter part, respectively, and are independently liftable; a substrate adsorption means which is disposed at an upper side of the first and second substrate support parts to adsorb the substrate; and a control unit. The control unit is configured to: control the substrate adsorption means to enable the substrate to be sequentially separated from the first perimeter part to the second perimeter part when the substrate is separated from the substrate adsorption means; and control the first and second substrate support units to be sequentially dropped at the timing of the separation.

Description

Film forming apparatus, film forming method, and manufacturing method of electronic device {FILM FORMING APPARATUS, FILM FORMING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method of an electronic device.

In the production of an organic EL display device (organic EL display), when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, the deposition material evaporated from the evaporation source of the film forming device is used to form a pixel pattern. By depositing on a substrate through a mask, an organic material layer or a metal layer is formed.

In an upward deposition (depo-up) deposition apparatus, the evaporation source is installed at the bottom of the vacuum vessel of the deposition apparatus, the substrate is placed on the upper part of the vacuum vessel, and deposition is performed on the lower surface of the substrate. In this upward deposition type film formation apparatus, the periphery of the lower surface of the substrate is supported by the support portion of the substrate holder to prevent damage to the organic material layer/electrode layer formed on the lower surface, which is the film deposition surface. In this case, as the size of the substrate increases, the central portion of the substrate that is not supported by the support portion of the substrate holder sags due to the substrate's own weight, which is a factor in reducing deposition precision. Even in film deposition devices other than the upward deposition method, there is a possibility that sagging of the substrate due to its own weight may occur.

Technology using an electrostatic chuck is being examined as a method to reduce sagging of the substrate due to its own weight. That is, by installing an electrostatic chuck on the top of the substrate and adsorbing the upper surface of the substrate supported by the support part of the substrate holder to the electrostatic chuck, the central part of the substrate is pulled by the electrostatic attraction of the electrostatic chuck to reduce sagging of the substrate. I'm doing it.

However, in this method of adsorbing the substrate using an electrostatic chuck, there are problems such as the substrate being damaged when separating the substrate from the electrostatic chuck after film formation, or the overall process time (tact time) increasing due to the time taken for separation. There may be.

For example, as shown in FIG. 9, when separating the substrate S, the adsorption voltage applied to the electrostatic chuck 240 is turned off while the support portion 220 of the substrate holder is spaced apart from the substrate S. In this case, when the substrate S separated from the electrostatic chuck 240 falls to the support part 220, there is a risk that an impact may be applied to the substrate S and the substrate S may be damaged. Meanwhile, to prevent such damage, if the substrate support 220 is left in substantial contact with the substrate S during separation, the substrate S is restrained and the time required to separate the substrate increases.

Accordingly, in consideration of the above problems, the present invention aims to more effectively separate a substrate from an electrostatic chuck.

A film forming apparatus according to an embodiment of the present invention is a film forming apparatus that forms a film forming material on a substrate through a mask, and is disposed in a chamber, and has a first peripheral part of the substrate and a second peripheral part opposite to the first peripheral part, respectively. It includes first and second substrate supports that support the unit and can be independently raised and lowered, substrate suction means disposed above the first and second substrate supports to suction the substrate, and a control portion, wherein the controller When separating the substrate from the substrate suction means, the substrate suction means is controlled so that the separation proceeds sequentially from the first peripheral portion toward the second peripheral portion, and the substrate suction means is controlled in accordance with the timing at which the separation proceeds. The first substrate support unit and the second substrate support unit are controlled to descend sequentially.

A film forming method according to an embodiment of the present invention is a film forming method of forming a film forming material on a substrate through a mask inside a chamber of a film forming apparatus, wherein the first peripheral part of the substrate brought into the chamber is opposed to the first peripheral part. A process of supporting the second peripheral portion by a first substrate support portion and a second substrate support portion, respectively, and adsorbing the back surface of the substrate opposite to the film forming surface of the substrate to a substrate suction means disposed above the first and second substrate supports. a process of forming a film on the film-forming surface of the substrate through the mask using a film-forming material discharged from a film-formation source; and a process of separating the substrate from the substrate suction means and supporting it with the first and second substrate supports. In the separation process, the control unit controls the substrate suction means to sequentially proceed from the first peripheral portion toward the second peripheral portion, and the substrate adsorption means is controlled according to the timing at which the separation proceeds. The first substrate support portion and the second substrate support portion are controlled to descend sequentially.

A method of manufacturing an electronic device according to an embodiment of the present invention is characterized by manufacturing an electronic device using the above film forming method.

According to the present invention, separation of the substrate from the electrostatic chuck can be performed more effectively.

Additionally, the effects described here are not necessarily limited, and may be any effect described during the present disclosure.

1 is a schematic diagram of a portion of an electronic device manufacturing apparatus.
Figure 2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
Figure 3 is a plan view of the substrate support unit according to one embodiment of the present invention as seen from above in the vertical direction (Z direction).
Figure 4 is a diagram illustrating the configuration of an adsorption unit of an electrostatic chuck according to an embodiment of the present invention.
Figure 5 is a diagram showing a substrate separation process according to an embodiment of the present invention.
Figure 6 is a diagram showing a substrate separation process according to another embodiment of the present invention.
Figure 7 is a conceptual diagram schematically showing the bias phenomenon during substrate adsorption.
Figure 8 is a schematic diagram showing an electronic device.
Figure 9 is a diagram showing a conventional substrate separation process.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are not intended to limit the scope of the present invention to these unless specifically stated. no.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be suitably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, polymer film, or metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Additionally, as the deposition material, any material such as an organic material or a metallic material (metal, metal oxide, etc.) can be selected. In addition to the vacuum deposition apparatus described in the description below, the present invention can also be applied to a film formation apparatus including a sputter apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention is applicable to manufacturing equipment for organic electronic devices (for example, organic light-emitting elements, thin film solar cells) and optical members. Among them, an organic light-emitting device manufacturing apparatus that forms an organic light-emitting device by evaporating an evaporation material and depositing it on a substrate through a mask is one of the preferred application examples of the present invention.

<Electronic device manufacturing equipment>

1 is a plan view schematically showing the configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus in FIG. 1 is used, for example, to manufacture display panels of organic EL displays for smartphones. In the case of display panels for smartphones, for example, 4.5 generation substrates (approximately 700 mm After forming a film to form an organic EL element on a substrate of approximately 925 mm), the substrate is cut out and manufactured into a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster devices (1) and a relay device that connects the cluster devices (1).

The cluster device 1 includes a plurality of film forming devices 11 that perform processing (e.g., film forming) on the substrate S, and a plurality of mask stock devices 12 that store masks M before and after use, It is provided with a transfer chamber 13 disposed in the center. As shown in FIG. 1, the transfer chamber 13 is connected to each of a plurality of film forming devices 11 and mask stock devices 12.

Within the transfer room 13, a transfer robot 14 is disposed to transfer the substrate and mask. The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Additionally, the transfer robot 14 transfers the mask M between the film forming device 11 and the mask stock device 12. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is mounted on a multi-joint arm.

In the film forming device 11 (also called a vapor deposition device), the vapor deposition material stored in the evaporation source is heated by a heater to evaporate, and is deposited on the substrate through a mask. Transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixation of the substrate S on the mask M, film formation (deposition) ), etc., are performed by the film forming apparatus 11.

In the mask stock device 12, new masks and used masks to be used in the film forming process in the film forming apparatus 11 are divided into two cassettes and stored. The transfer robot 14 transfers the used mask from the film forming device 11 to the cassette of the mask stock device 12, and transfers a new mask stored in another cassette of the mask stock device 12 to the film forming device 11. Send it back to

The cluster device 1 includes a pass chamber 15 that transfers the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1, and a pass chamber 15 for transferring the substrate S to the cluster device 1, and A buffer chamber 16 is connected to transfer the substrate S to another cluster device downstream. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and uses one of the film forming devices 11 in the cluster device 1 (for example, the film forming device 11a). ) is returned. In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (e.g., the film forming device 11b) and is connected to the downstream side. It is returned to the buffer room (16).

A turning chamber 17 is installed between the buffer chamber 16 and the pass chamber 15 to change the direction of the substrate. A transfer robot 18 is installed in the turning chamber 17 to receive the substrate S from the buffer chamber 16, rotate the substrate S 180 degrees, and transfer the substrate S to the pass chamber 15. Through this, the direction of the substrate S becomes the same in the upstream cluster device and the downstream cluster device, making substrate processing easier.

The pass chamber 15, buffer chamber 16, and swiveling chamber 17 are so-called relay devices that connect cluster devices, and the relay devices installed on the upstream and/or downstream sides of the cluster devices are the pass chamber and buffer chamber. , including at least one of the swiveling rooms.

The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the vortex chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

In this embodiment, the configuration of the electronic device manufacturing apparatus is described with reference to FIG. 1, but the present invention is not limited thereto, and may have other types of devices or chambers, and the arrangement between these devices or chambers may be different. there is.

Hereinafter, the specific configuration of the film forming apparatus 11 will be described.

<Tabernacle equipment>

FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11. In the following description, the XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) is the Y direction. Do it as Also, the rotation angle around the Z axis is expressed as θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21, a mask support unit 23, and , an electrostatic chuck (24), and an evaporation source (25).

The substrate support unit 22 is a means for receiving and holding the substrate S transferred by the transfer robot 14 installed in the transfer chamber 13, and is also called a substrate holder. The substrate support unit 22 includes a support portion that supports the peripheral portion of the lower surface of the substrate. The detailed configuration of the support portion of the substrate support unit 22 will be described later.

A mask support unit 23 is installed below the substrate support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transferred by the transfer robot 14 installed in the transfer room 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used to manufacture organic EL devices for smartphones is a metal mask with a fine opening pattern, and is also called a FMM (Fine Metal Mask).

An electrostatic chuck 24 is installed above the substrate support unit 22 to attract and secure the substrate by electrostatic attraction. The electrostatic chuck 24 has a structure in which electric circuits such as metal electrodes are embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using the electrostatic chuck 24 as a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24 . When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal electrode and the adsorption object such as the substrate S are connected through the dielectric matrix. Polarization charges of opposite polarity are induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by electrostatic attraction between them.

The electrostatic chuck 24 may be formed as one plate or may be formed to have a plurality of sub-plates. In addition, even when it is formed as a single plate, a plurality of electric circuits can be included therein, so that the electrostatic force can be controlled to vary depending on the position within the single plate. That is, the electrostatic chuck may be divided into a plurality of adsorption modules according to the structure of the embedded electric circuit. Details of the configuration of the suction portion of the electrostatic chuck 24 and the control method for applying the suction voltage will be described later along with the operation control of the support portion of the substrate support unit 22.

Although not shown, a magnetic force application means may be installed on the top of the electrostatic chuck 24 to apply magnetic force to the mask M during film formation to pull the mask M toward the substrate S and bring it into close contact with the substrate S. You can. The magnet as a magnetic force application means may be made of a permanent magnet or an electromagnet, and may be divided into a plurality of modules.

In addition, although not shown in FIG. 2, a cooling mechanism (e.g., a cooling plate) to suppress the temperature rise of the substrate S is provided on the side opposite to the adsorption surface of the electrostatic chuck 24, so that the deposition on the substrate S It may be used to suppress deterioration or deterioration of organic materials. The cooling plate may be formed integrally with the magnet.

The evaporation source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is stored, a heater (not shown) to heat the crucible, and a device that prevents the deposition material from scattering onto the substrate until the evaporation rate from the evaporation source becomes constant. Including shutters (not shown), etc. The evaporation source 25 may have various configurations depending on the purpose, such as a point evaporation source or a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, etc. are installed on the upper outer side (atmospheric side) of the vacuum container 21. These actuators and position adjusting devices are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the substrate support unit 22. Details of the control for raising and lowering the substrate support unit 22 by driving the substrate Z actuator 26 will be described later. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjustment mechanism 29 is a drive means for adjusting (alignment) the positional misalignment in the horizontal plane between the electrostatic chuck 24 and the substrate S and/or the substrate S and the mask M. That is, the position adjustment mechanism 29 moves the electrostatic chuck 24 in at least one of the It is a horizontal drive mechanism to relatively move/rotate in the direction of. In this embodiment, the movement of the substrate support unit 22 and the mask support unit 23 in the horizontal plane is fixed, and the position adjustment mechanism is configured to move the electrostatic chuck 24 in the XYθ direction. The invention is not limited to this, and the horizontal movement of the electrostatic chuck 24 is fixed, and the position adjustment mechanism is configured to move the substrate support unit 22 and the mask support unit 23 in the XYθ direction. do.

On the outer upper surface of the vacuum container 21, in addition to the above-described driving mechanism, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20a, 20b) are installed. By recognizing the alignment mark on the substrate S and the alignment mark on the mask M from the images captured by the alignment cameras 20a and 20b, the relative misalignment within each XY position or XY plane can be measured.

The alignment between the substrate S and the mask M includes a first alignment process (also called “rough alignment”), which is a first position adjustment process that roughly aligns the position, and a second process that performs position alignment with high precision. A two-stage alignment can be performed, a second alignment (also called “fine alignment”), which is a position adjustment process. In that case, two types of cameras can be used: a first alignment camera 20a with low resolution but a wide viewing angle, and a second alignment camera 20b with a narrow viewing angle but high resolution. For each of the substrate S and the mask 120, alignment marks provided at two locations on a pair of opposing sides are measured with the two first alignment cameras 20a, and the substrate S and the mask 120 are measured. Alignment marks installed at the four corners of are measured with four second alignment cameras 20b. The number of alignment marks and cameras for their measurement is not particularly limited. For example, in the case of fine alignment, the marks provided at two opposing corners of the substrate S and the mask 120 may be measured with two cameras. do.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by a computer having, for example, a processor, memory, storage, I/O, etc. In this case, the function of the control unit is realized by the processor executing a program stored in memory or storage. As a computer, a general-purpose personal computer may be used, an embedded computer, or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured with a circuit such as ASIC or FPGA. Additionally, a control unit may be installed for each film forming device, or one control unit may be configured to control a plurality of film forming devices.

<Substrate support unit>

The substrate support unit 22 includes a support portion that supports the peripheral portion of the lower surface of the substrate. FIG. 3 is a plan view of the substrate support unit 22 viewed from above in the vertical direction (Z direction), and for ease of understanding, shows the substrate S being supported while placed on the substrate support unit 22. It is shown, and other driving mechanisms such as the electrostatic chuck 24 and the substrate Z actuator 26 disposed on the substrate S are omitted.

As shown, the support part constituting the substrate support unit 22 includes support parts 221 and 222 that can be independently controlled to lift and lower, and these support parts 221 and 222 are on two opposing sides of the substrate S. It is installed to support the peripheral part of. Specifically, a first support part 221 is installed along one side (e.g., first long side) of the two opposing sides of the substrate S, and a second support part 222 is installed along the other side (e.g., second long side). It is installed. In Figure 3, the first support part 221 and the second support part 222 are each shown as a single support member extending long in the direction of the corresponding side. However, the first support part 221 and the second support part 222 are , a plurality of support members may be arranged along the direction of the side to form the first support part 221 and the second support part 222, respectively.

The above-described substrate Z actuator 26, which is a drive mechanism for lifting and driving the substrate support unit 22 in the Z-axis direction, is installed corresponding to each of these substrate supports 221 and 222. That is, two substrate Z actuators are installed at positions corresponding to the two opposing long sides of the substrate S, and are connected to the corresponding substrate supports 221 and 222, respectively. And, each of these substrate Z actuators is controlled by the control unit so that the corresponding substrate supports 221 and 222 can be independently raised and lowered.

<Configuration of the adsorption portion of the electrostatic chuck (24)>

The configuration of the suction part of the electrostatic chuck according to an embodiment of the present invention will be described with reference to FIGS. 4A to 4C.

FIG. 4A is a conceptual block diagram of the electrostatic chuck system 30 of this embodiment, FIG. 4B is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 4C is a schematic plan view of the electrostatic chuck 24.

The electrostatic chuck system 30 of this embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32, as shown in FIG. 4A.

The voltage application unit 31 applies a voltage to generate electrostatic attraction to the electrode portion of the electrostatic chuck 24.

The voltage control unit 32 controls the magnitude and voltage of the voltage applied to the electrode section by the voltage application unit 31 as the adsorption and separation process of the electrostatic chuck system 30 or the film forming process of the film forming device 11 progresses. The application start point, voltage maintenance time, voltage application sequence, etc. are controlled. For example, the voltage control unit 32 may independently control voltage application to a plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In this embodiment, the voltage control unit 32 is implemented separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic adsorption force for adsorbing an adsorption object (e.g., a substrate S) on an adsorption surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. . For example, the electrostatic chuck 24 of the present embodiment operates in a direction parallel to the long side of the electrostatic chuck 24 (Y direction) and/or in a direction parallel to the short side of the electrostatic chuck 24, as shown in FIG. 4C. It includes a plurality of sub-electrode portions 241 to 249 divided along the (X direction).

Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied to generate electrostatic adsorption force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape, as shown in FIG. 4C. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb teeth and a base to which the plurality of comb teeth are connected. The base of each electrode 331, 332 supplies electric potential to a plurality of comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force between the plurality of comb teeth and the object to be absorbed. Within one sub-electrode unit, each of the comb teeth of the first electrode 331 is alternately arranged to face each of the comb teeth of the second electrode 332. In this way, by forming the comb teeth of each electrode (331, 332) to face each other and be entangled with each other, the gap between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed, which causes the substrate (S) to be moved by the gradient force. can be adsorbed.

In this embodiment, each electrode 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 is described as having a comb shape, but the present invention is not limited to this and the It can have various shapes as long as it can generate electrostatic attraction.

The electrostatic chuck 24 of this embodiment has a plurality of adsorption portions corresponding to a plurality of sub-electrode portions. For example, the electrostatic chuck 24 of this embodiment may have nine adsorption units corresponding to nine sub-electrode units 241 to 249, as shown in FIG. 4C, but is not limited thereto, and the substrate (S ) In order to more precisely control the adsorption, it may have a different number of adsorption units.

The plurality of adsorption units may be implemented by physically having one plate having a plurality of electrode units, or by having a plurality of physically divided plates each having one or more electrode units. In the embodiment shown in FIG. 4C, each of the plurality of adsorption units may be implemented to correspond to each of a plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

For example, by controlling the application of voltage to the sub-electrode portions 241 to 249 by the voltage control unit 32, the direction (Y direction) intersecting the adsorption progress direction (X direction) of the substrate S, as described later. The three sub-electrode units 241, 244, and 247 arranged as follows can form one adsorption unit. That is, each of the three sub-electrode parts 241, 244, and 247 can be independently controlled by voltage, but by controlling the voltage to be applied to these three sub-electrode parts 241, 244, and 247 at the same time, these three sub-electrode parts 241, 244, and 247 are controlled to apply voltage simultaneously. The electrode units 241, 244, and 247 can function as one adsorption unit. As long as the substrate can be adsorbed independently on each of the plurality of adsorption units, the specific physical structure and electrical circuit structure may be different.

<Substrate (S) separation process from electrostatic chuck 24>

Hereinafter, with reference to FIG. 5, the configuration of substrate separation according to an embodiment of the present invention will be described.

The present invention, when separating a substrate from an electrostatic chuck, sequentially turns off the adsorption voltage applied to the electrostatic chuck for each adsorption area (or applies the separation voltage for each adsorption area), and also turns off the adsorption voltage applied to the electrostatic chuck for each adsorption area. It is characterized in that the control and the driving control of the substrate support are interconnected. Specifically, with the substrate support part in contact with the substrate, the adsorption area of the electrostatic chuck is controlled to partially initiate separation from one side area, and the substrate support part is sequentially lowered from the side where separation began according to the separation timing. Do it as

FIG. 5 shows a detailed process of sequentially separating the substrate S from one peripheral edge toward the other opposing peripheral edge, based on the interconnection of the suction area control of the electrostatic chuck and the driving control of the substrate support. Here, three sub-electrode parts 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption part ①, and the central part of the electrostatic chuck 24 The explanation is given on the premise that the three sub-electrode parts (242, 245, 248) form the second adsorption part (②), and the remaining three sub-electrode parts (243, 246, 249) form the third adsorption part (③). do.

The substrate adsorption voltage (ΔV1) is applied to the entire adsorption area (first adsorption part ①, second adsorption part ②, and third adsorption part ③) of the electrostatic chuck 24, so that the entire surface of the substrate S is applied to the electrostatic chuck 24. ), and both substrate supports 221 and 222 are raised and in contact with both peripheral portions of the substrate S (FIG. 5A), and the voltage control unit 32 corresponds to the first support unit 221. The substrate adsorption voltage ΔV1 being applied to the sub-electrode part of the electrostatic chuck 24 disposed in the position, that is, the three sub-electrode parts 241, 244, and 247 constituting the first adsorption part ①, is Turn it off (Figure 5b). As a result, partial separation begins from the peripheral portion of one side of the substrate S corresponding to the first adsorption portion ①. In accordance with this separation start timing, the first support portion 221 supporting the peripheral portion of the substrate S is lowered. Next, the voltage control unit 32 adjusts the substrate adsorption voltage ΔV1 applied to the three sub-electrode parts 242, 245, and 248 in the center of the electrostatic chuck 24 constituting the second adsorption part ②. Controlled to turn off, whereby the substrate separation started from one side peripheral portion progresses to an area corresponding to approximately half of the substrate S including the central portion of the substrate S in the direction toward the other opposing peripheral portion (Figure 5c).

Finally, the voltage control unit 32 controls to turn off the substrate adsorption voltage ΔV1 applied to the three sub-electrode parts 243, 246, and 249 constituting the third adsorption part ③, and thus Accordingly, the second support portion 222 supporting the other peripheral portion of the substrate S is lowered in accordance with the timing at which separation of the substrate from the other peripheral portion corresponding to the third adsorption portion ③ is started (FIG. 5D). Thereby, substrate separation is completed.

Each left drawing of FIG. 5 is a cross-sectional view showing the above separation process, and each right drawing of FIG. 5 is a top view (electrostatic chuck 24) conceptually showing the separation state of the substrate S in each voltage application step. ) is a top view viewed from the side. The substrate adsorption area at each stage is shown with a diagonal line.

As such, in one embodiment of the present invention, when separating a substrate from an electrostatic chuck, the suction area of the electrostatic chuck and the driving of the substrate support are controlled to be interconnected, so that the substrate can be gently separated without being damaged, and the substrate can be gently separated without any obstacles to separation. It is also possible to shorten the time.

Figure 6 is a diagram for explaining the configuration of substrate separation according to another embodiment of the present invention.

In this embodiment, the driving control of the adsorption area of the electrostatic chuck and the substrate support section during substrate separation described above are set in relation to the direction of adsorption progress during substrate adsorption.

That is, in the above-described embodiment, the substrate separation process was mainly explained, but also in the case of substrate adsorption, through control of the adsorption area of the electrostatic chuck, control of the drive of the substrate support, or control of both, from one area to the other. The substrate can be adsorbed sequentially toward the area.

For example, when adsorbing the substrate S to the electrostatic chuck 24, with the adsorption voltage applied to the electrostatic chuck 24, the first support part 221 of the substrate supports 221 and 222 is raised first, Adsorption is started first at the peripheral portion of one side of the substrate S supported by the first support portion 221, and then the second support portion 222 on the other opposite side is raised, so that adsorption occurs at the center of the substrate S. Afterwards, it can be allowed to proceed towards the other periphery. In addition, as in the case of separating the substrate, the substrate adsorption voltage applied to the electrostatic chuck 24 is sequentially applied to each adsorption area (first adsorption part ①, second adsorption part ②, and third adsorption part ③), so that the substrate ( The adsorption may proceed sequentially from one side of S) to the other side, and the application of the adsorption voltage for each region may be linked to the drive control of the above-described substrate support unit.

6A to 6C show that through this process, adsorption is initiated at one peripheral part (first adsorption part ①) of the substrate S (FIG. 6a), and the central part (second adsorption part ②) of the substrate S is It shows a process in which adsorption progresses past (FIG. 6b) to the peripheral edge of the opposite side (third adsorption section ③) (FIG. 6c).

FIGS. 6D to 6F show a process of separating the substrate S from the electrostatic chuck 24 again after performing film formation on the substrate S on which adsorption has been completed in this way, as described in the above-described embodiment. As shown, the control to turn off the substrate adsorption voltage ΔV1 applied to the electrostatic chuck 24 is sequentially controlled for each adsorption area, and in accordance with this substrate separation timing, the substrate support on the side where separation is started is performed first. lowered, and then controlled to lower the substrate support portion on the other side.

The basic operation of control of the adsorption area of the electrostatic chuck 24 and drive control of the substrate supports 221 and 222 linked thereto during substrate separation is the same as the above-described embodiment, and thus detailed description thereof will be omitted. What is noteworthy in this embodiment is that the direction of driving control of the adsorption area of the electrostatic chuck and the substrate support portion when separating the substrate is set opposite to the direction of adsorption when the substrate is adsorbed. That is, as shown in FIGS. 6D to 6F, when separating the substrate, the adsorption progress direction of FIGS. 6A to 6C (from one area of the substrate S supported by the first support portion 221 to the second support portion ( direction opposite to the direction (direction toward the other area of the substrate S supported by the second support part 222) (from the other side area of the substrate S supported by the second support part 222) to the direction supported by the first support part 221 Drive control of each adsorption region and the substrate support portion is performed so that separation proceeds in the direction toward one side of the substrate S.

When adsorbing the substrate sequentially from one area to the other area through control of the adsorption area of the electrostatic chuck or sequential driving of the substrate support, the substrate is adsorbed due to the effect of the sagging present in the center of the substrate. It may be adsorbed to the electrostatic chuck in a state that is biased toward the direction in which it is moving. Figure 7 is a conceptual diagram schematically showing this bias phenomenon. If such bias occurs in the position of the substrate, the amount of movement may increase during the next process, the alignment process with the mask, or if the bias is excessive, there is a risk that the substrate may fall during transportation to the next process.

In this embodiment, by controlling the driving of the adsorption area and the substrate support portion during substrate separation in the opposite direction to the adsorption progress, substrate bias that may occur during substrate adsorption can be eliminated. That is, by performing the separation in the opposite direction to the adsorption, the bias in the direction of adsorption that occurred during adsorption to the electrostatic chuck 24 is reduced to the opposite direction during separation, so that the substrate separated from the electrostatic chuck returns to its original state without bias in the substrate support. It can be moved to a location. Therefore, according to this embodiment, it is possible to prevent an increase in the amount of alignment movement due to substrate bias, a substrate falling, etc.

<Tabernacle process>

Hereinafter, a film forming method using the film forming apparatus according to this embodiment will be described.

With the mask M supported by the mask support unit 23 in the vacuum container 21, the substrate S is brought into the vacuum container 21. The substrate S is adsorbed to the electrostatic chuck 24 through the substrate adsorption process described above. Next, after performing alignment of the substrate S and the mask M, when the amount of relative positional deviation between the substrate S and the mask M becomes smaller than a predetermined threshold value, the magnetic force application means is lowered, and the substrate S and the mask M are aligned. After the mask M is brought into close contact, the film forming material is deposited on the substrate S. After forming the film to the desired thickness, the mask M is separated by raising the magnetic force application means, and the substrate S is separated from the electrostatic chuck 24 through the substrate separation process described above and then transported.

<Manufacturing method of electronic devices>

Next, an example of an electronic device manufacturing method using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. Figure 8(a) shows the overall view of the organic EL display device 60, and Figure 8(b) shows the cross-sectional structure of one pixel.

As shown in FIG. 8(a), a plurality of pixels 62 having a plurality of light-emitting elements are arranged in a matrix form in the display area 61 of the organic EL display device 60. Details will be described later, but each light emitting device has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel referred to here refers to the minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that emit different light. It is done. The pixel 62 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is particularly limited as long as it is of at least one color. no.

FIG. 8(b) is a partial cross-sectional schematic diagram taken along line A-B in FIG. 8(a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. . Among these, the hole transport layer 65, the light emitting layer 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. Additionally, in this embodiment, the light-emitting layer 66R is an organic EL layer that emits red, the light-emitting layer 66G is an organic EL layer that emits green, and the light-emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes called organic EL elements) that emit red, green, and blue colors, respectively. Additionally, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. Additionally, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anode 64. Additionally, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 8(b), the hole transport layer 65 or the electron transport layer 67 is shown as one layer, but depending on the structure of the organic EL display device, it may be formed of a plurality of layers including a hole blocking layer or an electron blocking layer. It may be possible. In addition, a hole injection layer having an energy band structure that can ensure smooth injection of holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. there is. Likewise, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a manufacturing method for an organic EL display device will be described in detail.

First, a substrate 63 on which a circuit (not shown) and an anode 64 for driving an organic EL display device are formed is prepared.

An acrylic resin is spin-coated on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography to form an opening in the area where the anode 64 is formed to form an insulating layer 69. This opening corresponds to the light emitting area where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 has been patterned is loaded into the first organic material film forming apparatus, the substrate is held by a substrate holding unit and an electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. The film is formed as a common layer. The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed to a size larger than the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus and held by a substrate holding unit and an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a red-emitting light-emitting layer 66R is formed on the portion of the substrate 63 where the red-emitting element is placed.

As with the deposition of the light-emitting layer 66R, the light-emitting layer 66G emitting green color is formed into a film using the third organic material film forming device, and further, the light emitting layer 66B emitting blue color is formed into a film using the fourth organic material film forming device. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a common layer for the three color light emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved to a metallic deposition material film forming apparatus to form a cathode 68.

Afterwards, it is transferred to a plasma CVD device to form a protective layer 70, thereby completing the organic EL display device 60.

From the time the substrate 63 on which the insulating layer 69 was patterned is brought into the film formation apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. There is a risk of deterioration due to moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between film forming devices is performed under a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: Tabernacle device
22: substrate support unit
221, 222: support part
23: Mask support unit
24: electrostatic chuck
241~249: Sub electrode section

Claims (12)

A film forming device that deposits a film forming material on a substrate through a mask,
a first substrate support portion disposed in the chamber and supporting a peripheral portion of a first side of the substrate;
a second substrate supporter disposed within the chamber and supporting a peripheral portion of a second side of the substrate opposite to the first side;
a substrate adsorption means disposed above the first and second substrate supports in the chamber to adsorb the substrate;
a driving unit that independently drives the first and second substrate supports;
Includes a control unit,
The substrate adsorption means is an electrostatic chuck that adsorbs the substrate by an adsorption voltage applied to the adsorption area, and has a plurality of divided adsorption areas where the application state of the adsorption voltage can be independently controlled as the adsorption area,
The control unit sets the adsorption voltage applied to the plurality of adsorption regions so that separation is sequentially performed from the periphery of the first side toward the periphery of the second side when separating the substrate from the substrate adsorption means. The substrate suction means is controlled to be sequentially turned off in a direction from the periphery of the first side toward the periphery of the second side, and the substrate adsorption means is applied to an adsorption area corresponding to the periphery of the first side among the plurality of adsorption areas. The first substrate supporter is first lowered according to the timing when the adsorption voltage is turned off, and then, according to the timing when the adsorption voltage applied to the adsorption area corresponding to the peripheral portion of the second side among the plurality of adsorption areas is turned off. A film forming apparatus, characterized in that the driving unit is controlled to lower the second substrate support unit. According to paragraph 1,
The control unit controls the substrate adsorption means or the first and second substrate supports so that adsorption is sequentially performed from the periphery of the second side toward the periphery of the first side when the substrate is adsorbed by the substrate adsorption unit. A tabernacle device characterized in that: According to paragraph 2,
The control unit, when adsorbing the substrate, controls the adsorption voltage to be applied sequentially to the plurality of adsorption areas in a direction from the periphery of the second side toward the periphery of the first side. According to paragraph 2,
The control unit controls, when adsorbing the substrate, to raise the second substrate supporter and the first substrate supporter in that order so that the second substrate supporter approaches the substrate suction means before the first substrate supporter. A tabernacle device characterized by: A film forming device that deposits a film forming material on a substrate through a mask,
a first substrate support portion disposed in the chamber and supporting a peripheral portion of a first side of the substrate;
a second substrate supporter disposed within the chamber and supporting a peripheral portion of a second side of the substrate opposite to the first side;
Provided with substrate adsorption means disposed above the first and second substrate supports in the chamber to adsorb the substrate by electrostatic force,
The substrate adsorption means includes a first adsorption electrode portion for adsorbing the peripheral portion of the first side, and a second adsorption electrode portion for adsorbing the peripheral portion of the second side,
Each of the first adsorption electrode unit and the second adsorption electrode unit includes a first electrode to which a positive voltage is applied as the adsorption voltage, and a second electrode to which a negative voltage is applied as the adsorption voltage,
When separating the substrate from the substrate adsorption means, a separation voltage is applied to the first adsorption electrode part, and in the first separation state in which the adsorption voltage is applied to the second adsorption electrode part, the first substrate The support unit descends independently with respect to the second substrate support unit,
In the state in which the separation voltage is applied, a negative voltage or a positive voltage whose absolute value is smaller than the adsorption voltage is applied to the first electrode, and a positive voltage or an absolute value smaller than the adsorption voltage is applied to the second electrode. A state in which this small negative voltage is applied and a state in which there is no potential difference between the first electrode and the second electrode,
After the first substrate support part is lowered, the second substrate support part is lowered in a second separation state in which the separation voltage is applied to both the first adsorption electrode part and the second adsorption electrode part. Device. According to clause 5,
Before entering the first separation state, in an adsorption state in which the adsorption voltage is applied to both the first adsorption electrode part and the second adsorption electrode part, each of the first substrate support part and the second substrate support part adsorbs the substrate. A film forming device, characterized in that it is in contact with the substrate adsorbed on the means. According to clause 5,
A film deposition apparatus characterized in that, when adsorbing the substrate to the substrate adsorption means, the adsorption voltage is applied to the second adsorption electrode portion, and then the adsorption voltage is applied to the first adsorption electrode portion. According to clause 6,
After applying the adsorption voltage to the second adsorption electrode part and before applying the adsorption voltage to the first adsorption electrode part, the second substrate support part is raised independently with respect to the first substrate support part. A tabernacle device made of. According to clause 8,
A film deposition apparatus characterized in that, after applying the adsorption voltage to the first adsorption electrode part, the first substrate support part is raised. According to clause 5,
The film forming apparatus wherein the substrate adsorption means includes at least one third adsorption electrode part disposed between the first adsorption electrode part and the second adsorption electrode part. A film forming method for forming a film forming material on a substrate within a chamber of a film forming apparatus, comprising:
By applying an adsorption voltage to the first adsorption electrode part of the substrate adsorption means for adsorbing the periphery of the first side of the substrate and the second adsorption electrode part for adsorbing the periphery of the second side opposite the first side of the substrate. an adsorption process of adsorbing the substrate to the substrate adsorption means;
After the adsorption process, a film forming process of forming a film forming material onto the substrate adsorbed by the substrate adsorption means through a mask;
After the film forming process, a separation voltage is applied to the first adsorption electrode portion, or no adsorption voltage is applied to the first adsorption electrode portion, so that the peripheral portion of the first side of the substrate is in a separated state, and the first adsorption electrode portion is separated. Using a driving unit that independently drives the first substrate supporter supporting the peripheral portion of the side and the second substrate supporter supporting the peripheral portion of the second side, the first substrate is separated at the timing of separation at the peripheral portion of the first side. By first lowering the support portion and then applying a separation voltage to the second adsorption electrode portion, or not applying an adsorption voltage to the second adsorption electrode portion, the peripheral portion of the second side of the substrate is placed in a separated state. , A film forming method comprising a separation step of lowering the second substrate support portion in accordance with the timing at which separation is performed at the periphery of the second side. A method of manufacturing an electronic device, comprising manufacturing an electronic device using the film forming method according to claim 11.