JP7078696B2 - Film forming equipment, film forming method, and manufacturing method of electronic devices - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) constituting the organic EL display device, the vapor deposition material evaporated from the evaporation source of the film forming apparatus is used. An organic layer or a metal layer is formed by depositing a film on a substrate through a mask on which a pixel pattern is formed.

In the upward vapor deposition method (depot-up) film forming apparatus, the evaporation source is provided in the lower part of the vacuum vessel of the film forming apparatus, the substrate is arranged in the upper part of the vacuum vessel, and vapor deposition is carried out on the lower surface of the substrate. In such an upward vapor deposition type film forming apparatus, the substrate supports the peripheral edge of the lower surface by the support portion of the substrate holder so as not to damage the organic substance layer / electrode layer formed on the lower surface which is the film forming surface. In this case, as the size of the substrate increases, the central portion of the substrate that is not supported by the support portion of the substrate holder bends due to the weight of the substrate, which is one of the factors that reduce the vapor deposition accuracy. Even in a film forming apparatus of a method other than the upward thin-film deposition method, bending due to the weight of the substrate may occur.

As a method for reducing the bending due to the weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by installing the electrostatic chuck on the upper part of the substrate and adsorbing the upper surface of the substrate supported by the support portion of the substrate holder to the electrostatic chuck, the central portion of the substrate is pulled by the electrostatic attraction of the electrostatic chuck. Therefore, the deflection of the substrate can be reduced.

However, in the method of adsorbing the substrate using the electrostatic chuck as described above, when the substrate is separated from the electrostatic chuck after film formation, the substrate is damaged or it takes time to separate the substrate as a whole. There may be a problem such as an increase in static electricity.

For example, as shown in FIG. 9, when the adsorption voltage applied to the electrostatic chuck 240 is turned off (OFF) with the support portion 220 of the substrate holder separated from the substrate S when the substrate S is separated, electrostatic electricity is generated. When the substrate S separated from the chuck 240 falls on the support portion 220, an impact is applied to the substrate S, and the substrate S may be damaged. On the other hand, in order to prevent such damage, if the substrate support portion 220 is substantially in contact with the substrate S at the time of separation, the substrate S is restrained and the time required for the substrate separation increases.

Therefore, in view of the above problems, it is an object of the present invention to more effectively separate the substrate from the electrostatic chuck.

The film forming apparatus according to the embodiment of the present invention is a film forming apparatus for forming a film forming material on a substrate via a mask, and is arranged in a chamber to support the peripheral edge of the first side of the substrate. A first substrate support portion to be used, a second substrate support portion arranged in the chamber and supporting a peripheral edge portion of a second side facing the first side of the substrate, and the first substrate in the chamber. A substrate suction means for sucking the substrate , a drive unit for independently raising and lowering the first and second substrate support portions, and a control unit are provided above the second substrate support portion. The control unit is characterized in that the drive unit is controlled so as to sequentially lower the first substrate support portion and the second substrate support portion when the substrate is separated from the substrate suction means.

The film forming method according to the embodiment of the present invention is a film forming method for forming a film forming material on a substrate in a chamber of a film forming apparatus, and the film forming material is adsorbed on the substrate adsorbing means via a mask. After the film forming step of forming the film forming material and the film forming step, the peripheral portion of the first side of the substrate is directed toward the peripheral edge of the second side facing the first side of the substrate. Then, in accordance with the timing of the separation step of separating the substrate from the substrate suction means and the separation of the peripheral portion of the first side and the peripheral portion of the second side, the first Having a lowering step of sequentially lowering the first substrate support portion that supports the peripheral edge portion of the side and the second substrate support portion that supports the peripheral edge portion of the second side by a drive unit that independently raises and lowers the peripheral portion. It is a feature.

The method for manufacturing an electronic device according to an embodiment of the present invention is characterized in that the electronic device is manufactured by using the film forming method.

According to the present invention, the substrate can be more effectively separated from the electrostatic chuck.

The effects described herein are not necessarily limited, and may be any of the effects described in the present disclosure.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a plan view of the substrate support unit according to the embodiment of the present invention as viewed from above in the vertical direction (Z direction). FIG. 4a is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 4b is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 4c is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 5 is a diagram showing a substrate separation step according to an embodiment of the present invention. FIG. 6 is a diagram showing a substrate separation step according to another embodiment of the present invention. FIG. 7 is a conceptual diagram schematically showing the bias phenomenon at the time of substrate adsorption. FIG. 8 is a schematic diagram showing an electronic device. FIG. 9 is a diagram showing a conventional substrate separation process.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. Further, as the vapor deposition material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum vapor deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to manufacturing equipment such as organic electronic devices (for example, organic light emitting devices, thin film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a vapor deposition material and depositing it on a substrate via a mask is one of the preferred application examples of the present invention.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5 generation substrate (about 700 mm x about 900 mm), a 6 generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.

The cluster device 1 includes a plurality of film forming devices 11 for processing (for example, film forming) the substrate S, a plurality of mask stock devices 12 for accommodating masks M before and after use, and a transport chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

In the transport chamber 13, a transport robot 14 that transports the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding a substrate S or a mask M is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material stored in the evaporation source is heated by a heater and evaporated, and is vapor-deposited on the substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposited film) are performed. This is done by device 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a path chamber 15 that transmits the board S from the upstream side to the cluster device 1 in the flow direction of the board S, and another board S on the downstream side that has been film-formed by the cluster device 1. A buffer chamber 16 for transmitting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to room 16.

A swivel chamber 17 for changing the direction of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. As a result, the orientation of the substrate S is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room, the buffer room, and the like. Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swivel chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film formation device>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the lateral direction (direction parallel to the short side) of the substrate S is the X direction, and the longitudinal direction (direction parallel to the long side) is set. It is in the Y direction. Further, the rotation angle around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and the evaporation source 25.

The board support unit 22 is a means for receiving and holding the board S carried by the transfer robot 14 provided in the transfer chamber 13, and is also called a board holder. The board support unit 22 includes a support portion that supports the peripheral edge portion of the lower surface of the board. The detailed configuration of the support portion of the board support unit 22 will be described later.

A mask support unit 23 is provided below the board support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transported by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called FMM (Fine Metal Mask).

An electrostatic chuck 24 for attracting and fixing the substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Labeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, it is applied to the object to be adsorbed such as the substrate S through the dielectric matrix. A polarization charge having the opposite polarity to that of the metal electrode is induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction between them.

The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub-plates. Further, even when formed by one plate, a plurality of electric circuits may be included therein and controlled so that the electrostatic attraction is different depending on the position in one plate. That is, the electrostatic chuck can be divided into a plurality of suction unit modules according to the structure of the embedded electric circuit. The configuration of the suction portion of the electrostatic chuck 24 and the details of the control method for applying the suction voltage will be described later together with the operation control of the support portion of the substrate support unit 22.

Although not shown, a magnetic force applying means for applying a magnetic force to the mask M at the time of film formation and attracting the mask M to the substrate S side and bringing the mask M into close contact with the substrate S can be installed on the upper portion of the electrostatic chuck 24. .. The magnet as the magnetic force applying means can consist of a permanent magnet or an electromagnet and can be partitioned into a plurality of modules.

Further, although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the particles are deposited on the substrate S. The deterioration or deterioration of the organic material may be suppressed. The cooling plate can also be formed integrally with the magnet.

The evaporation source 25 includes a crucible (not shown) in which the vapor-film-deposited material formed on the substrate is stored, a heater for heating the crucible (not shown), and the vapor-filmed material on the substrate until the evaporation rate from the evaporation source becomes constant. Includes shutters (not shown) that prevent scattering. The evaporation source 25 can have various configurations depending on the application, such as a point evaporation source and a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The board Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the board support unit 22. The details of the elevating control of the substrate support unit 22 by driving the substrate Z actuator 26 will be described later. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjusting mechanism 29 is a driving means for adjusting (aligning) the positional deviation between the electrostatic chuck 24 and the substrate S and / or between the substrate S and the mask M. That is, the position adjusting mechanism 29 relatives the electrostatic chuck 24 to the substrate support unit 22 and the mask support unit 23 in at least one of the X direction, the Y direction, and the θ direction in a plane parallel to the horizontal plane. It is a horizontal drive mechanism for moving / rotating. In this embodiment, the movement of the substrate support unit 22 and the mask support unit 23 in the horizontal plane is fixed, and the position adjustment mechanism is configured to move the electrostatic chuck 24 in the X, Y, and θ directions. However, the present invention is not limited to this, and even if the position adjustment mechanism is configured so that the movement of the electrostatic chuck 24 in the horizontal direction is fixed and the substrate support unit 22 and the mask support unit 23 are moved in the XYθ direction. good.

On the outer upper surface of the vacuum container 21, in addition to the drive mechanism described above, for alignment for photographing the alignment marks formed on the substrate S and the mask M through the transparent window provided on the upper surface of the vacuum container 21. Cameras 20a and 20b are installed. By recognizing the alignment mark on the substrate S and the alignment mark on the mask M from the images taken by the alignment cameras 20a and 20b, it is possible to measure the respective XY positions and relative deviations in the XY plane.

The alignment between the substrate S and the mask M is the first alignment (also referred to as "rough alignment"), which is the first position adjustment step for roughly aligning, and the first alignment for performing high-precision alignment. It is possible to carry out a two-step alignment of a second alignment (also referred to as “fine alignment”), which is a two-position adjustment step. In this case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 20a and a narrow-field but high-resolution second alignment camera 20b. For each of the substrate S and the mask 120, the alignment marks attached to two points on the pair of opposite sides are measured by the two first alignment cameras 20a, and the alignment marks attached to the four corners of the substrate S and the mask 120 are measured. Is measured by four second alignment cameras 20b. The number of alignment marks and measurement cameras thereof is not particularly limited. For example, in the case of fine alignment, the marks attached to the two opposite corners of the substrate S and the mask 120 may be measured by two cameras. good.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transfer and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logical controller) may be used. Alternatively, a part or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatus.

<Board support unit>
The substrate support unit 22 includes a support portion that supports the peripheral edge portion of the lower surface of the substrate. FIG. 3 is a plan view of the substrate support unit 22 viewed from above in the vertical direction (Z direction), and shows how the substrate S is placed and supported on the substrate support unit 22 for convenience of understanding. In addition, the driving mechanisms such as the electrostatic chuck 24 and the substrate Z actuator 26 arranged on the upper part of the substrate S are not shown.

As shown, the support portions constituting the substrate support unit 22 include support portions 221 and 222 that can be independently lifted and controlled, and these support portions 221 and 222 are peripheral edges of two opposing sides of the substrate S. It is provided to support the part. Specifically, the first support portion 221 is installed along one side side (for example, the first long side) of the two opposing sides of the substrate S, and along the other side side (second long side). A second support portion 222 is installed. FIG. 3 shows a configuration in which the first support portion 221 and the second support portion 222 are each composed of one support member extending long in the direction of the side thereof, but the first support portion 221 and the second support portion 221 are shown. In the support portion 222, a plurality of support members may be arranged along the direction of the side to form a first support portion 221 and a second support portion 222, respectively.

The above-mentioned substrate Z actuator 26, which is a drive mechanism for driving the substrate support unit 22 up and down in the Z-axis direction, is installed corresponding to each of the substrate support portions 221, 222. That is, two board Z actuators are installed at positions corresponding to the two opposite long sides of the board S, and are connected to the corresponding board support portions 221 and 222, respectively. Then, each of these substrate Z actuators is controlled by the control unit so that the corresponding substrate support portions 221 and 222 can be raised and lowered independently.

<Structure of suction part of electrostatic chuck 24>
The configuration of the suction portion of the electrostatic chuck according to the embodiment of the present invention will be described with reference to FIGS. 4a to 4c.

4a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 4b is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 4c is a schematic diagram of the electrostatic chuck 24. It is a plan view.

As shown in FIG. 4a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32.

The voltage application unit 31 applies a voltage for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24.

The voltage control unit 32 starts applying the magnitude and voltage of the voltage applied to the electrode unit by the voltage application unit 31 according to the progress of the adsorption and separation process of the electrostatic chuck system 30 or the film formation process of the film forming apparatus 11. It controls the time point, voltage maintenance time, voltage application order, and so on. For example, the voltage control unit 32 can independently control the voltage application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is embodied separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (for example, the substrate S) on the adsorption surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. can. For example, the electrostatic chuck 24 of the present embodiment has, as shown in FIG. 4c, along the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or along the lateral direction (X direction) of the electrostatic chuck 24. , Includes a plurality of divided sub-electrode portions 241 to 249.

Each sub-electrode portion comprises an electrode pair 33 to which positive (first polar) and negative (second polar) potentials are applied to generate electrostatic adsorption forces. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied as a substrate adsorption voltage, and a second electrode 332 to which a negative potential is applied as a substrate adsorption voltage. Applying the substrate separation voltage means applying a voltage having the same polarity as the substrate adsorption voltage and having a small absolute value, or a voltage having a polarity different from the substrate adsorption voltage to the first electrode 331 and the second electrode 332. .. Setting the potential difference between the first electrode 331 and the second electrode 332 to 0 is also an example of applying the substrate separation voltage. This case is also referred to as turning off the substrate adsorption voltage.

The first electrode 331 and the second electrode 332 each have a comb shape as shown in FIG. 4c. For example, the first electrode 331 and the second electrode 332 each include a plurality of comb tooth portions and a base connected to the plurality of comb tooth portions. The base of each of the electrodes 331 and 332 supplies an electric potential to the comb tooth portion, and the plurality of comb tooth portions generate an electrostatic adsorption force with the object to be adsorbed. In one sub-electrode portion, each comb tooth portion of the first electrode 331 is alternately arranged so as to face each comb tooth portion of the second electrode 332. By forming the comb teeth of the electrodes 331 and 332 facing each other and intricately intertwined with each other in this way, the distance between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed. However, the substrate S can be adsorbed by the gradient force.

In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited to this, and electrostatic electricity is generated between the electrodes and the object to be adsorbed. It can have a variety of shapes as long as it can generate an attractive force.

The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 4c, the electrostatic chuck 24 of the present embodiment has nine suction portions corresponding to the nine sub-electrode portions 241 to 249, but the suction is not limited to this, and the substrate S can be attracted. In order to control it more precisely, it may have another number of adsorption portions.

The plurality of adsorption portions may be embodied by physically one plate having a plurality of electrode portions, or by having each of the plurality of physically divided plates having one or more electrode portions. It may be embodied. In the embodiment shown in FIG. 4c, each of the plurality of adsorption portions may be embodied so as to correspond to each of the plurality of sub-electrode portions, or one adsorption portion may be embodied so as to include the plurality of sub-electrode portions. Good.

For example, by controlling the application of voltage to the sub-electrode units 241 to 249 by the voltage control unit 32, the substrate S is arranged in a direction (Y direction) intersecting the adsorption traveling direction (X direction) of the substrate S, as will be described later. The three sub-electrode portions 241 and 244, 247 can form one suction portion. That is, each of the three sub-electrode units 241 and 244, 247 can independently control the voltage, but by controlling so that the voltage is applied to these three sub-electrode units 241 and 244, 247 at the same time. , These three electrode portions 241 and 244, 247 can be made to function as one suction portion. As long as the substrate can be independently adsorbed to each of the plurality of adsorption portions, its specific physical structure and electric circuit structure may change.

<Substrate S separation process from electrostatic chuck 24>
Hereinafter, the configuration of the substrate separation according to the embodiment of the present invention will be described with reference to FIG.

In the present invention, when the substrate is separated from the electrostatic chuck, the adsorption voltage applied to the electrostatic chuck is sequentially turned off (OFF) for each adsorption region (or the separation voltage is applied for each adsorption region), and The feature is that the control of the suction region of the electrostatic chuck and the drive control of the substrate support portion are interlocked with each other. Specifically, by controlling the adsorption region of the electrostatic chuck with the substrate support portion in contact with the substrate, separation is partially started from the region on one side, and separation is performed according to this separation timing. It is characterized in that the substrate support portion is also sequentially lowered from the side where the static electricity is started.

In FIG. 5, the substrate S is sequentially moved from the peripheral edge portion on one side toward the peripheral edge portion on the opposite side based on the mutual interlocking between the control of the suction region of the electrostatic chuck and the drive control of the substrate support portion. The detailed process of separation is illustrated. Here, three sub-electrode portions 241 and 244, 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form a first suction portion (C1), and are in the center of the electrostatic chuck 24. The three sub-electrode portions 242, 245, and 248 of the unit form the second adsorption portion (C2), and the remaining three sub-electrode portions 243, 246, and 249 form the third adsorption portion (C3). Will be explained on the premise of.

A substrate adsorption voltage (ΔV1) is applied to the entire adsorption region of the electrostatic chuck 24 (first adsorption portion C1, second adsorption portion C2, third adsorption portion C3), and the entire surface of the substrate S is attracted to the electrostatic chuck 24. The voltage control unit 32 is arranged at a position corresponding to the first support unit 221 in a state where both the substrate support portions 221 and 222 on both sides are also raised and in contact with the peripheral edges on both sides of the substrate S (FIG. 5a). The substrate adsorption voltage (ΔV1) applied to the sub-electrode portion of the electrostatic chuck 24, that is, the three sub-electrode portions 241 and 244, 247 constituting the first suction portion (C1) is turned off (FIG. 5b). As a result, separation starts partially from the one-side peripheral edge portion of the substrate S corresponding to the first adsorption portion (C1). At the same time as the separation start timing, the first support portion 221 that supports the peripheral portion of the substrate S is lowered.

Subsequently, the voltage control unit 32 turns off the substrate adsorption voltage (ΔV1) applied to the three sub-electrode portions 242, 245, and 248 in the central portion of the electrostatic chuck 24 constituting the second adsorption portion (C2). As a result, the substrate separation starting from the peripheral edge portion on one side is performed toward the opposite peripheral edge portion on the other side up to a region corresponding to approximately half of the substrate S including the central portion of the substrate S (FIG. FIG. 5c).

Finally, the voltage control unit 32 controls to turn off the substrate adsorption voltage (ΔV1) applied to the three sub-electrode units 243, 246, and 249 constituting the third adsorption unit (C3). , The second support portion 222 that supports the other side peripheral edge portion of the substrate S is lowered at the timing when the substrate separation at the other side peripheral edge portion corresponding to the third suction portion (C3) starts (FIG. 5d). .. This completes the substrate separation.

Each left side drawing of FIG. 5 is a cross-sectional view showing the above separation progress process, and each right side drawing of FIG. 5 is a top view conceptually showing the separation state of the substrate S at each of the above voltage application stages. It is a top view (top view) seen from the electrostatic chuck 24 side. The substrate adsorption area at each stage is shown by diagonal lines.

As described above, in one embodiment of the present invention, when the substrate is separated from the electrostatic chuck, the suction region of the electrostatic chuck and the drive of the substrate support are controlled by interlocking with each other so as not to damage the substrate. It can be separated smoothly and the time required for separation can be shortened.

FIG. 6 is a diagram for explaining a configuration of substrate separation according to another embodiment of the present invention.

In the present embodiment, the suction region of the electrostatic chuck and the drive control of the board support portion at the time of substrate separation described above are set in association with the suction progress direction at the time of substrate suction.

That is, in the above-described embodiment, the substrate separation step has been mainly described, but in the case of substrate adsorption, similarly, control of the adsorption region of the electrostatic chuck, drive control of the substrate support portion, or both of these are controlled. Through this, the substrate can be sequentially adsorbed from the region on one side toward the region on the other side.

For example, when the substrate S is attracted to the electrostatic chuck 24, the first support portion 221 of the substrate support portions 221 and 222 is raised first while the adsorption voltage is applied to the electrostatic chuck 24. Suction starts from one side peripheral portion of the substrate S supported by the support portion 221 of the above, and then the second support portion 222 on the opposite side is raised so that the adsorption starts from the central portion of the substrate S. It is possible to proceed toward the peripheral edge on the other side via.

Further, as in the case of substrate separation, the substrate adsorption voltage applied to the electrostatic chuck 24 is sequentially applied to each adsorption region (first adsorption portion C1, second adsorption portion C2, third adsorption portion C3). It is also possible to sequentially perform adsorption from one side of the substrate S toward the other side, and it is also possible to link the application of the adsorption voltage for each region with the drive control of the substrate support portion described above. can.

6a to 6c show that through such a process, adsorption is started at one side peripheral portion (first adsorption portion C1) of the substrate S (FIG. 6a), and the central portion of the substrate S (second adsorption portion C2). (FIG. 6b), the process of adsorbing to the other peripheral edge portion (third adsorption portion C3) on the opposite side is shown (FIG. 6c).

6d to 6f show a step of forming a film on the substrate S for which adsorption has been completed and then separating the substrate S from the electrostatic chuck 24 again, as described in the above-described embodiment. In addition, the control to turn off the substrate adsorption voltage (ΔV1) applied to the electrostatic chuck 24 is sequentially controlled for each adsorption region, and the substrate support portion on the side where the separation starts is set according to the timing of the substrate separation. It is controlled to lower the substrate support portion on the other side first.

Since the basic operation of the control of the suction region of the electrostatic chuck 24 and the drive control of the board support portions 221 and 222 linked thereto at the time of substrate separation is the same as that of the above-described embodiment, the details thereof will be omitted. What should be noted in this embodiment is that the suction region of the electrostatic chuck and the traveling direction of the drive control of the substrate support portion at the time of substrate separation are set in the direction opposite to the adsorption traveling direction at the time of substrate adsorption. That is, as shown in FIGS. 6d to 6f, at the time of substrate separation, the adsorption traveling direction of FIGS. 6a to 6c (from one side region of the substrate S supported by the first support portion 221 to the second support portion 222). One side of the substrate S supported by the first support portion 221 from the other side region of the substrate S supported by the second support portion 222 in the direction opposite to the direction (direction toward the other side region of the supported substrate S). Drive control is performed for each adsorption region and the substrate support portion so that the separation is performed in the direction toward the region).

When the substrate is adsorbed, the central portion of the substrate is used when the substrate is adsorbed sequentially from one region to the other by controlling the adsorption region of the electrostatic chuck or sequentially driving the substrate support portion. Due to the influence of the deflection existing in the substrate, the substrate may be adsorbed by the electrostatic chuck in a state of being biased in the adsorption advancing direction. FIG. 7 is a conceptual diagram schematically showing such a bias phenomenon. If such a bias occurs in the position of the substrate, the amount of movement in the alignment process with the mask, which is the next step, increases, or if the bias is excessive, the substrate is transferred to the subsequent processes. There is a risk of falling.

In the present embodiment, by setting the drive control of the adsorption region and the substrate support portion at the time of substrate separation in the direction opposite to the adsorption progress, it is possible to eliminate the bias of the substrate that may occur at the time of substrate adsorption. That is, the substrate separated from the electrostatic chuck is a substrate support portion by making the separation in the opposite direction to the adsorption and reducing the bias in the adsorption traveling direction generated at the time of adsorption to the electrostatic chuck 24 in the opposite direction at the time of separation. It can be placed in its original position without any bias. Therefore, according to the present embodiment, it is possible to prevent an increase in the amount of alignment movement due to the bias of the substrate, a drop of the substrate, and the like.

<Film formation process>
Hereinafter, a film forming method using the film forming apparatus according to the present embodiment will be described.

The substrate S is carried into the vacuum container 21 with the mask M supported by the mask support unit 23 in the vacuum container 21. The substrate S is adsorbed to the electrostatic chuck 24 through the substrate adsorption step described above. Next, after the substrate S and the mask M are aligned, when the relative positional deviation amount between the substrate S and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means is lowered to bring the substrate S and the mask M into close contact with each other. The film-forming material is formed on the substrate S. After forming a film to a desired thickness, the magnetic force applying means is raised to separate the mask M, and the substrate S is separated from the electrostatic chuck 24 through the substrate separation step described above, and then carried out.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 8A shows an overall view of the organic EL display device 60, and FIG. 8B shows a cross-sectional structure of one pixel.

As shown in FIG. 8A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B, which emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. It is not limited.

FIG. 8B is a schematic partial cross-sectional view taken along the line AB of FIG. 8A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layer 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 8B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer due to the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a circuit board (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display region. A film is formed as a layer common to the above. The hole transport layer 65 is formed by vacuum deposition. In reality, the hole transport layer 65 is formed in a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of three colors.

The substrate formed up to the electron transport layer 67 is moved by a metallic vapor deposition material film forming apparatus to form a cathode 68.

After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

Since the above-described embodiment shows an example of the present invention, the present invention is not limited to the configuration of the above-mentioned embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film forming apparatus, 22: Substrate support unit, 221, 222: Support part, 23: Mask support unit, 24: Electrostatic chuck, 241-249: Sub-electrode part

Claims (16)

A film forming device that deposits a film forming material on a substrate via a mask.
A first substrate support portion that is arranged in the chamber and supports the peripheral edge portion of the first side of the substrate, and a first substrate support portion.
A second substrate support portion arranged in the chamber and supporting a peripheral edge portion of a second side facing the first side of the substrate, and a second substrate support portion.
A substrate adsorption means for adsorbing the substrate, which is arranged above the first and second substrate support portions in the chamber, and
A drive unit that raises and lowers the first and second substrate support portions independently, and
With a control unit,
The film forming unit is characterized in that the control unit controls the drive unit so as to sequentially lower the first substrate support portion and the second substrate support portion when the substrate is separated from the substrate adsorption means. Device. The control unit controls the substrate adsorption means so that separation is sequentially performed from the peripheral edge portion of the first side toward the peripheral edge portion of the second side, and the peripheral edge portion of the first side. The first substrate support portion is lowered first according to the timing at which the separation is performed, and then the second substrate support portion is lowered at the timing when the separation is performed at the peripheral edge portion of the second side. The film forming apparatus according to claim 1, wherein the film forming apparatus is controlled to the above. The substrate adsorption means is an electrostatic chuck that adsorbs the substrate by an adsorption voltage applied to the adsorption region, and as the adsorption region, a plurality of divided adsorption states in which the application state of the adsorption voltage can be independently controlled. Has an area and
When the substrate is separated, the control unit sequentially turns off the adsorption voltage applied to the plurality of adsorption regions in the direction from the peripheral edge of the first side toward the peripheral edge of the second side. The film forming apparatus according to claim 1, wherein the film forming apparatus is controlled so as to be the same. When the substrate is adsorbed to the substrate adsorption means, the control unit is the substrate adsorption means or the substrate adsorption means so that adsorption is sequentially performed from the peripheral edge portion of the second side toward the peripheral edge portion of the first side. The film forming apparatus according to claim 1, wherein the first and second substrate support portions are controlled. The substrate adsorption means is an electrostatic chuck that adsorbs the substrate by an adsorption voltage applied to the adsorption region, and as the adsorption region, a plurality of divided adsorption states in which the application state of the adsorption voltage can be independently controlled. Has an area and
At the time of adsorption of the substrate, the control unit controls so that the adsorption voltage is sequentially applied to the plurality of adsorption regions in the direction from the peripheral edge portion of the second side toward the peripheral edge portion of the first side. The film forming apparatus according to claim 4, wherein the film forming apparatus is to be used. When the substrate is adsorbed, the control unit is raised in the order of the second substrate support portion and the first substrate support portion, and the second substrate support portion is adsorbed to the substrate before the first substrate support portion. The film forming apparatus according to claim 4, wherein the film forming apparatus is controlled so as to be close to the means. A film forming device that deposits a film forming material on a substrate via a mask.
A first substrate support portion that is arranged in the chamber and supports the peripheral edge portion of the first side of the substrate, and a first substrate support portion.
A second substrate support portion arranged in the chamber and supporting a peripheral edge portion of a second side facing the first side of the substrate, and a second substrate support portion.
A substrate adsorption means, which is arranged above the first and second substrate supports in the chamber and for adsorbing the substrate by electrostatic force, is provided.
The substrate adsorption means includes a first adsorption electrode portion that adsorbs the peripheral edge portion of the first side, and a second adsorption electrode portion that adsorbs the peripheral edge portion of the second side.
Each of the first adsorption electrode portion and the second adsorption electrode portion includes a first electrode to which a positive voltage is applied as an adsorption voltage and a second electrode to which a negative voltage is applied as the adsorption voltage. ,
In the first separation state in which the separation voltage is applied to the first adsorption electrode portion and the adsorption voltage is applied to the second adsorption electrode portion when the substrate is separated from the substrate adsorption means, the first The substrate support portion descends independently of the second substrate support portion ,
In the state where the separation voltage is applied, a negative voltage or a positive voltage having an absolute value smaller than the adsorption voltage is applied to the first electrode, and a positive voltage or an absolute voltage higher than the adsorption voltage is applied to the second electrode. A film forming apparatus comprising a state in which a negative voltage having a small value is applied and a state in which there is no potential difference between the first electrode and the second electrode . After the first substrate support portion is lowered, the second substrate support portion is lowered in the second separation state in which the separation voltage is applied to both the first suction electrode portion and the second suction electrode portion. The film forming apparatus according to claim 7 . The first substrate support portion and the second substrate support portion in the adsorption state in which the adsorption voltage is applied to both the first adsorption electrode portion and the second adsorption electrode portion before the first separation state is reached. The film forming apparatus according to claim 7 or 8 , wherein each of the above is in contact with the substrate adsorbed by the substrate adsorption means. 7. The invention is characterized in that, when the substrate is adsorbed to the substrate adsorption means, the adsorption voltage is applied to the second adsorption electrode portion, and then the adsorption voltage is applied to the first adsorption electrode portion. The film forming apparatus according to any one of claims 9 . After applying the adsorption voltage to the second adsorption electrode portion and before applying the adsorption voltage to the first adsorption electrode portion, the second substrate support portion is attached to the first substrate support portion . The film forming apparatus according to claim 9 , wherein the film forming apparatus is raised independently. The film forming apparatus according to claim 11 , wherein the first substrate support portion is raised after the adsorption voltage is applied to the first adsorption electrode portion. Any of claims 7 to 12 , wherein the substrate adsorption means includes at least one third adsorption electrode portion arranged between the first adsorption electrode portion and the second adsorption electrode portion. The film forming apparatus according to item 1. A film forming method for forming a film forming material on a substrate in the chamber of a film forming apparatus.
A film forming step of forming a film forming material on the substrate adsorbed by the substrate adsorbing means via a mask, and a film forming process.
After the film forming step, the substrate is sequentially adsorbed on the substrate from the peripheral edge of the first side of the substrate toward the peripheral edge of the second side facing the first side of the substrate. Separation process to separate from
The first substrate support portion that supports the peripheral edge portion of the first side and the second side surface are aligned with the timing at which the peripheral edge portion of the first side and the peripheral edge portion of the second side are separated. A film forming method comprising: a lowering step of sequentially lowering a second substrate supporting portion that supports a peripheral edge portion by a driving portion that independently raises and lowers each . A film forming method for forming a film forming material on a substrate in the chamber of a film forming apparatus.
The first adsorption electrode portion of the substrate adsorption means for adsorbing the peripheral edge of the first side of the substrate and the second adsorption for adsorbing the peripheral edge of the second side facing the first side of the substrate. A suction step of sucking the substrate to the substrate suction means by applying a suction voltage to the electrode portion,
After the adsorption step, a film forming step of forming a film forming material on the substrate adsorbed by the substrate adsorption means via a mask, and a film forming step.
After the film forming step, a separation step in which a separation voltage is applied to the first adsorption electrode portion or no voltage is applied to the first adsorption electrode portion.
After the separation step, a drive unit that independently drives the first substrate support portion that supports the peripheral edge portion of the first side and the second substrate support portion that supports the peripheral edge portion of the second side is provided. A film forming method comprising a lowering step of independently lowering the first substrate support portion with respect to the second substrate support portion . A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to claim 14 .

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