KR20200134708A - 웨이퍼 본딩 장치 - Google Patents
웨이퍼 본딩 장치 Download PDFInfo
- Publication number
- KR20200134708A KR20200134708A KR1020190060541A KR20190060541A KR20200134708A KR 20200134708 A KR20200134708 A KR 20200134708A KR 1020190060541 A KR1020190060541 A KR 1020190060541A KR 20190060541 A KR20190060541 A KR 20190060541A KR 20200134708 A KR20200134708 A KR 20200134708A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- support plate
- disposed
- sub
- bonding apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
도 4 내지 도 8은 본 발명의 일 실시예에 따른 웨이퍼 본딩 장치를 이용한 웨이퍼 본딩 방법을 설명하기 위한 도면들이다.
도 9 내지 도 11은 본 발명의 일 실시예에 따른 웨이퍼 본딩 장치를 설명하기 위한 도면들이다.
도 12는 본 발명의 일 실시예에 따른 웨이퍼 본딩 장치를 설명하기 위한 도면이다.
110: 하부 지지판 112a, 114a: 내측 진공 홈
112b, 114b: 외측 진공 홈 116: 하부 구조물
116a, 116b: 서브 하부 구조물 120: 상부 지지판
122a, 124a: 내측 진공 홈 122b, 124b: 외측 진공 홈
126: 상부 구조물 126a, 126b: 서브 상부 구조물
130: 가압 장치 132: 핀
140, 142, 144: 진공 펌프 150: 제어부
Claims (20)
- 제1 웨이퍼가 배치되는 하부 지지판;
상기 하부 지지판에 인접하여, 상하 방향으로 이동 가능하도록 배치된 하부 구조물;
상기 제1 웨이퍼에 본딩되는 제2 웨이퍼가 배치되는 상부 지지판; 및
상기 상부 지지판에 인접하여, 상하 방향으로 이동 가능하도록 배치된 상부 구조물을 포함하는 웨이퍼 본딩 장치. - 제1항에 있어서,
상기 하부 구조물은, 상기 제1 웨이퍼가 상기 하부 지지판에 배치된 후, 상 방향으로 이동하는 웨이퍼 본딩 장치. - 제2항에 있어서,
상기 이동된 하부 구조물의 일 측면의 적어도 일부는 상기 제1 웨이퍼의 일 측면에 접촉하는 웨이퍼 본딩 장치. - 제2항에 있어서,
상기 이동된 하부 구조물의 상면은 상기 제1 웨이퍼의 상면과 높이가 동일한 웨이퍼 본딩 장치. - 제1항에 있어서,
상기 상부 구조물은, 상기 제2 웨이퍼가 상기 상부 지지판에 배치된 후, 하 방향으로 이동하는 웨이퍼 본딩 장치. - 제5항에 있어서,
상기 이동된 상부 구조물의 일 측면의 적어도 일부는 상기 제2 웨이퍼의 일 측면에 접촉하는 웨이퍼 본딩 장치. - 제5항에 있어서,
상기 이동된 하부 구조물의 하면은 상기 제2 웨이퍼의 하면과 높이가 동일한 웨이퍼 본딩 장치. - 제1항에 있어서,
상기 하부 구조물은, 상기 제1 웨이퍼와 상기 제2 웨이퍼의 본딩이 완료된 후, 하 방향으로 이동하는 웨이퍼 본딩 장치. - 제1항에 있어서,
상기 상부 구조물은, 상기 제1 웨이퍼와 상기 제2 웨이퍼의 본딩이 완료된 후, 상 방향으로 이동하는 웨이퍼 본딩 장치. - 제1 웨이퍼가 배치되는 하부 지지판;
상기 하부 지지판에 인접하도록 배치된 하부 구조물;
상기 제1 웨이퍼에 본딩되는 제2 웨이퍼가 배치되는 상부 지지판;
상기 상부 지지판에 인접하도록 배치된 상부 구조물; 및
상기 하부 구조물과 상기 상부 구조물 사이의 간격을 조절하는 제어부를 포함하는 웨이퍼 본딩 장치. - 제10항에 있어서,
상기 제어부는, 상기 제1 웨이퍼와 상기 제2 웨이퍼의 본딩을 위해 상기 하부 지지판과 상기 상부 지지판이 정렬된 후, 상기 하부 구조물의 상면과 상기 상부 구조물의 하면 사이의 간격이 좁아지도록 상기 하부 구조물과 상기 상부 구조물을 이동시키는 웨이퍼 본딩 장치. - 제11항에 있어서,
상기 이동된 하부 구조물의 일 측면의 적어도 일부는 상기 제1 웨이퍼의 일 측면에 접촉하는 웨이퍼 본딩 장치. - 제11항에 있어서,
상기 이동된 하부 구조물의 상면은 상기 제1 웨이퍼의 상면과 높이가 동일한 웨이퍼 본딩 장치. - 제11항에 있어서,
상기 이동된 상부 구조물의 일 측면의 적어도 일부는 상기 제2 웨이퍼의 일 측면에 접촉하는 웨이퍼 본딩 장치. - 제11항에 있어서,
상기 이동된 하부 구조물의 하면은 상기 제2 웨이퍼의 하면과 높이가 동일한 웨이퍼 본딩 장치. - 제1 웨이퍼가 배치되는 하부 지지판;
상기 하부 지지판의 일 측면에 인접하여 이동 가능하도록 배치된 제1 서브 하부 구조물;
상기 하부 지지판의 다른 일 측면에 인접하여 이동 가능하도록 배치된 제2 서브 하부 구조물;
상기 제1 웨이퍼에 본딩되는 제2 웨이퍼가 배치되는 상부 지지판;
상기 상부 지지판에 일 측면에 인접하여 이동 가능하도록 배치된 제1 서브 상부 구조물; 및
상기 상부 지지판에 다른 일 측면에 인접하여 이동 가능하도록 배치된 제2 서브 상부 구조물을 포함하는 웨이퍼 본딩 장치. - 제16항에 있어서,
상기 제1 서브 하부 구조물과 상기 제2 서브 하부 구조물은 서로 독립적으로 상하 방향으로 이동 가능한 웨이퍼 본딩 장치. - 제16항에 있어서,
상기 제1 서브 하부 구조물 및 상기 제2 서브 하부 구조물 중 적어도 하나는 좌우 방향으로 이동 가능한 웨이퍼 본딩 장치. - 제16항에 있어서,
상기 제1 서브 상부 구조물과 상기 제2 서브 상부 구조물은 서로 독립적으로 상하 방향으로 이동 가능한 웨이퍼 본딩 장치. - 제16항에 있어서,
상기 제1 서브 상부 구조물 및 상기 제2 서브 상부 구조물 중 적어도 하나는 좌우 방향으로 이동 가능한 웨이퍼 본딩 장치.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190060541A KR20200134708A (ko) | 2019-05-23 | 2019-05-23 | 웨이퍼 본딩 장치 |
US16/703,062 US11728200B2 (en) | 2019-05-23 | 2019-12-04 | Wafer bonding apparatuses |
TW109117131A TWI864002B (zh) | 2019-05-23 | 2020-05-22 | 晶圓接合設備 |
CN202010440382.5A CN111987014A (zh) | 2019-05-23 | 2020-05-22 | 晶片键合装置 |
KR1020250034492A KR20250040623A (ko) | 2019-05-23 | 2025-03-18 | 웨이퍼 본딩 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190060541A KR20200134708A (ko) | 2019-05-23 | 2019-05-23 | 웨이퍼 본딩 장치 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020250034492A Division KR20250040623A (ko) | 2019-05-23 | 2025-03-18 | 웨이퍼 본딩 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20200134708A true KR20200134708A (ko) | 2020-12-02 |
Family
ID=73442100
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190060541A Ceased KR20200134708A (ko) | 2019-05-23 | 2019-05-23 | 웨이퍼 본딩 장치 |
KR1020250034492A Pending KR20250040623A (ko) | 2019-05-23 | 2025-03-18 | 웨이퍼 본딩 장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020250034492A Pending KR20250040623A (ko) | 2019-05-23 | 2025-03-18 | 웨이퍼 본딩 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11728200B2 (ko) |
KR (2) | KR20200134708A (ko) |
CN (1) | CN111987014A (ko) |
TW (1) | TWI864002B (ko) |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101111063B1 (ko) | 2008-12-31 | 2012-02-16 | 엘아이지에이디피 주식회사 | 기판합착장치 |
TWI593048B (zh) | 2009-07-21 | 2017-07-21 | 尼康股份有限公司 | Substrate processing system, substrate holder, substrate holder pair, substrate bonding apparatus, and device manufacturing method |
JP5485958B2 (ja) | 2011-09-16 | 2014-05-07 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
KR101906509B1 (ko) | 2011-12-07 | 2018-10-10 | 다즈모 가부시키가이샤 | 접합장치 및 접합방법 |
US20140265165A1 (en) * | 2013-03-14 | 2014-09-18 | International Business Machines Corporation | Wafer-to-wafer fusion bonding chuck |
US9922851B2 (en) * | 2014-05-05 | 2018-03-20 | International Business Machines Corporation | Gas-controlled bonding platform for edge defect reduction during wafer bonding |
SG11201603148VA (en) | 2014-12-18 | 2016-07-28 | Ev Group E Thallner Gmbh | Method for bonding substrates |
US10636661B2 (en) | 2016-01-15 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for wafer bonding |
US20170207191A1 (en) | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Bonding system and associated apparatus and method |
JP6448848B2 (ja) * | 2016-03-11 | 2019-01-09 | ボンドテック株式会社 | 基板接合方法 |
JP6727069B2 (ja) | 2016-08-09 | 2020-07-22 | 東京エレクトロン株式会社 | 接合装置および接合システム |
JP6707420B2 (ja) | 2016-08-09 | 2020-06-10 | 東京エレクトロン株式会社 | 接合装置および接合システム |
JP6843232B2 (ja) * | 2016-09-29 | 2021-03-17 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 2つの基板をボンディングするための装置および方法 |
JP6925160B2 (ja) * | 2017-05-02 | 2021-08-25 | 東京エレクトロン株式会社 | 接合装置 |
JP6854696B2 (ja) | 2017-05-02 | 2021-04-07 | 東京エレクトロン株式会社 | 接合装置および接合方法 |
KR102455415B1 (ko) * | 2017-12-18 | 2022-10-17 | 삼성전자주식회사 | 기판 접합 장치 및 이를 이용한 기판의 접합 방법 |
US10770422B2 (en) * | 2018-12-29 | 2020-09-08 | Micron Technology, Inc. | Bond chucks having individually-controllable regions, and associated systems and methods |
-
2019
- 2019-05-23 KR KR1020190060541A patent/KR20200134708A/ko not_active Ceased
- 2019-12-04 US US16/703,062 patent/US11728200B2/en active Active
-
2020
- 2020-05-22 CN CN202010440382.5A patent/CN111987014A/zh active Pending
- 2020-05-22 TW TW109117131A patent/TWI864002B/zh active
-
2025
- 2025-03-18 KR KR1020250034492A patent/KR20250040623A/ko active Pending
Also Published As
Publication number | Publication date |
---|---|
US20200373186A1 (en) | 2020-11-26 |
KR20250040623A (ko) | 2025-03-24 |
US11728200B2 (en) | 2023-08-15 |
TW202044464A (zh) | 2020-12-01 |
TWI864002B (zh) | 2024-12-01 |
CN111987014A (zh) | 2020-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102507283B1 (ko) | 기판 척 및 이를 포함하는 기판 접합 시스템 | |
KR102446955B1 (ko) | 웨이퍼 분리 장치 | |
KR20100050432A (ko) | 다이 이젝터 | |
JP6407803B2 (ja) | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP6703620B2 (ja) | 接合装置、接合システム、接合方法及びコンピュータ記憶媒体 | |
KR102407491B1 (ko) | 접합 장치, 접합 시스템, 접합 방법 및 컴퓨터 기억 매체 | |
TW201540149A (zh) | 用於分離晶片的設備和方法 | |
KR20210070695A (ko) | 웨이퍼의 평탄도를 향상시킬 수 있는 웨이퍼 척킹 장치 | |
KR100582056B1 (ko) | 박형 칩 분리 장치 및 그를 이용한 박형 칩 분리 방법 | |
CN111128841B (zh) | 裸片顶出设备 | |
KR20200134708A (ko) | 웨이퍼 본딩 장치 | |
KR102649912B1 (ko) | 본딩 모듈 및 이를 포함하는 다이 본딩 장치 | |
KR102536175B1 (ko) | 다이 본딩 장치 | |
KR102635493B1 (ko) | 본딩 설비에서 다이를 이송하기 위한 장치 및 방법 | |
KR20240002701A (ko) | 접합 장치 및 접합 방법 | |
KR101743667B1 (ko) | 반도체 디바이스 장착 가이더 | |
JP7597462B2 (ja) | 基板保持機構及び基板載置方法 | |
KR20230021590A (ko) | 접합 장치 및 접합 방법 | |
KR100864590B1 (ko) | 반도체 패키지의 소팅테이블 | |
KR102688735B1 (ko) | 기판 로딩장치 | |
KR20220026496A (ko) | 수지 성형 장치 및 수지 성형품의 제조 방법 | |
JP2010140921A (ja) | ボール搭載装置、ボール搭載方法及び電子部品の製造装置 | |
KR102177863B1 (ko) | 칩 필름 단계적 박리장치 | |
JPH05286568A (ja) | ウエハ吸着装置とこれを用いた半導体装置製造方法 | |
KR20210076472A (ko) | 다이 픽업 장치 및 다이 픽업 장치의 동작방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
A201 | Request for examination | ||
PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
AMND | Amendment | ||
E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
PX0901 | Re-examination |
St.27 status event code: A-2-3-E10-E12-rex-PX0901 |
|
E601 | Decision to refuse application | ||
E801 | Decision on dismissal of amendment | ||
P12-X000 | Request for amendment of application rejected |
St.27 status event code: A-2-2-P10-P12-nap-X000 |
|
PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
A107 | Divisional application of patent | ||
PA0107 | Divisional application |
St.27 status event code: A-0-1-A10-A16-div-PA0107 St.27 status event code: A-0-1-A10-A18-div-PA0107 |