KR20140051438A - 연마 패드 - Google Patents
연마 패드 Download PDFInfo
- Publication number
- KR20140051438A KR20140051438A KR1020147007259A KR20147007259A KR20140051438A KR 20140051438 A KR20140051438 A KR 20140051438A KR 1020147007259 A KR1020147007259 A KR 1020147007259A KR 20147007259 A KR20147007259 A KR 20147007259A KR 20140051438 A KR20140051438 A KR 20140051438A
- Authority
- KR
- South Korea
- Prior art keywords
- polyurethane resin
- diisocyanate
- polishing
- polishing pad
- resin foam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical group O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 claims description 6
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Images
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- B24—GRINDING; POLISHING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
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- B24D11/001—Manufacture of flexible abrasive materials
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- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
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- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
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- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
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- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6666—Compounds of group C08G18/48 or C08G18/52
- C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
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- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/721—Two or more polyisocyanates not provided for in one single group C08G18/73 - C08G18/80
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- C08G18/00—Polymeric products of isocyanates or isothiocyanates
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- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
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- C08G18/7614—Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring
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- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/77—Polyisocyanates or polyisothiocyanates having heteroatoms in addition to the isocyanate or isothiocyanate nitrogen and oxygen or sulfur
- C08G18/78—Nitrogen
- C08G18/79—Nitrogen characterised by the polyisocyanates used, these having groups formed by oligomerisation of isocyanates or isothiocyanates
- C08G18/791—Nitrogen characterised by the polyisocyanates used, these having groups formed by oligomerisation of isocyanates or isothiocyanates containing isocyanurate groups
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
마모 파라미터 = {1/(인장 파단 강도[MPa]×인장 파단 연신율[%]/100)}×100
Description
2: 연마 정반
3: 연마제(슬러리)
4: 피연마재(반도체 웨이퍼)
5: 지지대(폴리싱헤드)
6, 7: 회전축
Claims (11)
- 미세 기포를 가지는 폴리우레탄 수지 발포체로 이루어지는 연마층을 가지는 연마 패드에 있어서,
상기 폴리우레탄 수지 발포체는, 아스카 D 경도가 20∼60 도이며, 또한 하기 식으로 표시되는 마모 파라미터가 1∼3인 폴리우레탄 수지를 함유하는 연마 패드:
마모 파라미터 = {1/(인장 파단 강도[MPa]×인장 파단 연신율[%]/100)}×100. - 제1항에 있어서,
상기 폴리우레탄 수지 발포체는, 기포수가 200 개/mm2 이상이며, 또한 평균 기포 직경이 50㎛ 이하인, 연마 패드. - 제1항에 있어서,
상기 폴리우레탄 수지는, 이소시아네이트 성분으로서 다량화 디이소시아네이트 및 방향족 디이소시아네이트, 고분자량 폴리올, 및 활성 수소기 함유 저분자량 화합물을 포함하는 프리폴리머 원료 조성물을 반응시켜 얻어지는 이소시아네이트 말단 프리폴리머와 쇄연장제를 원료 성분으로서 함유하는, 연마 패드. - 제3항에 있어서,
다량화 디이소시아네이트의 함유량은, 전체 이소시아네이트 성분에 대하여 15∼60 중량%이며, 이소시아네이트 말단 프리폴리머의 NCO wt%가 5∼8 wt%인, 연마 패드. - 제3항에 있어서,
다량화 디이소시아네이트가 다량화 지방족 디이소시아네이트이며, 방향족 디이소시아네이트가 톨루엔 디이소시아네이트인, 연마 패드. - 제5항에 있어서,
다량화 지방족 디이소시아네이트가 다량화 헥사메틸렌디이소시아네이트인, 연마 패드. - 제1항에 있어서,
폴리우레탄 수지 발포체는, 아스카 D 경도가 10∼45 도인, 연마 패드. - 제1항에 있어서,
폴리우레탄 수지 발포체는, 비중이 0.5∼1.0인, 연마 패드. - 제1항에 있어서,
상기 미세 기포는, 중공(中空) 미소(微小) 구체(球體)로 형성되어 있는, 연마 패드. - 제1항에 기재된 연마 패드의 제조 방법으로서,
이소시아네이트 말단 프리폴리머, 실리콘계 계면활성제, 및 제3급 아민 촉매를 포함하는 제1 성분을 비반응성 기체와 교반하고 상기 비반응성 기체를 미세 기포로서 분산시킨 기포 분산액을 조제하고, 그 후, 상기 기포 분산액에 쇄연장제를 포함하는 제2 성분을 혼합하고, 경화하여 상기 폴리우레탄 수지 발포체를 제작하는 공정을 포함하고,
상기 이소시아네이트 말단 프리폴리머는, 이소시아네이트 성분으로서 다량화 디이소시아네이트 및 방향족 디이소시아네이트, 고분자량 폴리올, 및 활성 수소기 함유 저분자량 화합물을 포함하는 프리폴리머 원료 조성물을 반응시켜 얻어지는 것이며,
제3급 아민 촉매의 함유량은, 이소시아네이트 말단 프리폴리머 100 중량부에 대하여 0.1∼3 중량부인, 연마 패드의 제조 방법. - 제1항에 기재된 연마 패드를 사용하여 반도체 웨이퍼의 표면을 연마하는 공정을 포함하는 반도체 디바이스의 제조 방법.
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PCT/JP2012/082552 WO2013089240A1 (ja) | 2011-12-16 | 2012-12-14 | 研磨パッド |
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JP6439958B2 (ja) * | 2014-03-31 | 2018-12-19 | 富士紡ホールディングス株式会社 | 研磨パッド |
US9259821B2 (en) * | 2014-06-25 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing layer formulation with conditioning tolerance |
CN105904352B (zh) * | 2016-06-03 | 2018-06-01 | 湖北鼎汇微电子材料有限公司 | 一种抛光层及其制备方法以及低损伤化学机械抛光垫 |
CN105922126B (zh) * | 2016-06-03 | 2018-05-11 | 湖北鼎龙控股股份有限公司 | 化学机械抛光垫的检测窗及其制备方法 |
KR101779546B1 (ko) * | 2016-06-22 | 2017-09-18 | 에스케이씨 주식회사 | 연마패드 및 이의 제조방법 |
KR101799972B1 (ko) * | 2017-01-02 | 2017-11-21 | 에스케이씨 주식회사 | 연마패드 및 이의 제조방법 |
CN111318956A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 聚氨酯研磨垫及其制造方法、及化学机械研磨装置 |
CN111320863A (zh) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 制备研磨垫之组合物 |
KR102287235B1 (ko) * | 2019-10-30 | 2021-08-06 | 에스케이씨솔믹스 주식회사 | 가교도가 조절된 연마패드 및 이의 제조방법 |
CN111909353A (zh) * | 2020-06-30 | 2020-11-10 | 山东一诺威聚氨酯股份有限公司 | 低粘度聚氨酯制备抛光垫的方法 |
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- 2012-12-14 CN CN201280057045.1A patent/CN103958125A/zh active Pending
- 2012-12-14 KR KR1020147007259A patent/KR101631974B1/ko active Active
- 2012-12-14 US US14/365,023 patent/US20140342641A1/en not_active Abandoned
- 2012-12-14 WO PCT/JP2012/082552 patent/WO2013089240A1/ja active Application Filing
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JP2006297582A (ja) | 2005-03-22 | 2006-11-02 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2006320980A (ja) * | 2005-05-17 | 2006-11-30 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
KR20080002981A (ko) * | 2005-05-17 | 2008-01-04 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP2007073796A (ja) * | 2005-09-08 | 2007-03-22 | Nihon Micro Coating Co Ltd | 研磨パッド及びその製造方法並びに研磨方法 |
JP2014128859A (ja) * | 2012-12-28 | 2014-07-10 | Toyo Tire & Rubber Co Ltd | 研磨パッドの製造方法 |
Also Published As
Publication number | Publication date |
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TWI488712B (zh) | 2015-06-21 |
TW201338922A (zh) | 2013-10-01 |
US20140342641A1 (en) | 2014-11-20 |
CN103958125A (zh) | 2014-07-30 |
KR101631974B1 (ko) | 2016-06-20 |
WO2013089240A1 (ja) | 2013-06-20 |
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