KR20150081350A - 연마 패드 - Google Patents
연마 패드 Download PDFInfo
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- KR20150081350A KR20150081350A KR1020157014799A KR20157014799A KR20150081350A KR 20150081350 A KR20150081350 A KR 20150081350A KR 1020157014799 A KR1020157014799 A KR 1020157014799A KR 20157014799 A KR20157014799 A KR 20157014799A KR 20150081350 A KR20150081350 A KR 20150081350A
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- KR
- South Korea
- Prior art keywords
- isocyanate
- molecular weight
- polishing
- polyurethane foam
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
- B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
- C08G18/12—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3203—Polyhydroxy compounds
- C08G18/3206—Polyhydroxy compounds aliphatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4804—Two or more polyethers of different physical or chemical nature
- C08G18/4808—Mixtures of two or more polyetherdiols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/721—Two or more polyisocyanates not provided for in one single group C08G18/73 - C08G18/80
- C08G18/724—Combination of aromatic polyisocyanates with (cyclo)aliphatic polyisocyanates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/04—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
- C08J9/12—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
- C08J9/122—Hydrogen, oxygen, CO2, nitrogen or noble gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2101/00—Manufacture of cellular products
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2201/00—Foams characterised by the foaming process
- C08J2201/02—Foams characterised by the foaming process characterised by mechanical pre- or post-treatments
- C08J2201/026—Crosslinking before of after foaming
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/044—Micropores, i.e. average diameter being between 0,1 micrometer and 0,1 millimeter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
- C08J2375/04—Polyurethanes
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Polyurethanes Or Polyureas (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
2: 연마 정반
3: 연마제(슬러리)
4: 연마 대상물(반도체 웨이퍼)
5: 지지대(폴리싱 헤드)
6, 7: 회전축
Claims (10)
- 미세 기포를 가지는 폴리우레탄 발포체로 이루어지는 연마층을 가지는 연마 패드에 있어서,
상기 폴리우레탄 발포체는, 이소시아네이트 성분, 고분자량 폴리올, 및 지방족 디올을 포함하는 프리폴리머 원료 조성물을 반응시켜 얻어지는 이소시아네이트 말단 프리폴리머와, 쇄연장제와의 반응 경화체이며,
상기 고분자량 폴리올은, 200∼300의 범위에 분자량 분포의 피크를 가지는 폴리알킬렌글리콜 A, 및 800∼1200의 범위에 분자량 분포의 피크를 가지는 폴리알킬렌글리콜 B를 포함하는, 연마 패드. - 제1항에 있어서,
폴리알킬렌글리콜 A의 배합량은, 폴리알킬렌글리콜 B 100 중량부에 대하여 25∼35 중량부인, 연마 패드. - 제1항 또는 제2항에 있어서,
상기 지방족 디올이, 1,4-부탄디올인, 연마 패드. - 제1항 내지 제3항 중 어느 한 항에 있어서,
상기 지방족 디올의 배합량은, 프리폴리머 원료 조성물 중에 1∼7 중량%인, 연마 패드. - 제1항 내지 제4항 중 어느 한 항에 있어서,
이소시아네이트 성분은, 방향족 디이소시아네이트와, 지방족 및/또는 지환족디이소시아네이트를 함유하는, 연마 패드. - 제1항 내지 제5항 중 어느 한 항에 있어서,
폴리우레탄 발포체는, 이소시아네이트 말단 프리폴리머 100 중량부에 대하여 실리콘계 계면활성제를 3∼10 중량부 함유하는, 연마 패드. - 제1항 내지 제6항 중 어느 한 항에 있어서,
폴리우레탄 발포체는, 평균 기포 직경이 20∼70 ㎛이며, 커트레이트가 2 ㎛/min 이하인, 연마 패드. - 제1항 내지 제7항 중 어느 한 항에 있어서,
폴리우레탄 발포체는, 흡수 시의 경도 저하율이 20% 이하이며, 흡수 시의 파단 강도 저하율이 20% 이하인, 연마 패드. - 이소시아네이트 말단 프리폴리머를 합성하는 공정 C, 및 상기 이소시아네이트 말단 프리폴리머를 포함하는 제1 성분과 쇄연장제를 포함하는 제2 성분을 혼합하고, 경화하여 폴리우레탄 발포체를 제작하는 공정 D를 포함하는 연마 패드의 제조 방법에 있어서,
상기 공정 C는, 이소시아네이트 성분에 지방족 디올 및 200∼300의 범위에 분자량 분포의 피크를 가지는 폴리알킬렌글리콜 A를 반응시켜 프리폴리머 전구체(前驅體)를 합성하고, 그 후, 프리폴리머 전구체에 800∼1200의 범위에 분자량 분포의 피크를 가지는 폴리알킬렌글리콜 B를 반응시켜 이소시아네이트 말단 프리폴리머를 합성하는 공정이며,
상기 공정 D는, 상기 이소시아네이트 말단 프리폴리머를 포함하는 제1 성분에 실리콘계 계면활성제를 이소시아네이트 말단 프리폴리머 100 중량부에 대하여 3∼10 중량부 첨가하고, 또한 상기 제1 성분을 비반응성 기체와 교반하여 상기 비반응성 기체를 미세 기포로서 분산시킨 기포 분산액을 조제한 후, 상기 기포 분산액에 쇄연장제를 포함하는 제2 성분을 혼합하고, 경화하여 폴리우레탄 발포체를 제작하는 공정인, 연마 패드의 제조 방법. - 제1항 내지 제8항 중 어느 한 항에 기재된 연마 패드를 사용하여 반도체 웨이퍼의 표면을 연마하는 공정을 포함하는 반도체 디바이스의 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2013-014623 | 2013-01-29 | ||
JP2013014623A JP5661129B2 (ja) | 2013-01-29 | 2013-01-29 | 研磨パッド |
PCT/JP2014/050577 WO2014119367A1 (ja) | 2013-01-29 | 2014-01-15 | 研磨パッド |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150081350A true KR20150081350A (ko) | 2015-07-13 |
Family
ID=51262081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020157014799A Ceased KR20150081350A (ko) | 2013-01-29 | 2014-01-15 | 연마 패드 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9539693B2 (ko) |
JP (1) | JP5661129B2 (ko) |
KR (1) | KR20150081350A (ko) |
CN (1) | CN104955614A (ko) |
SG (1) | SG11201505900XA (ko) |
TW (1) | TWI492817B (ko) |
WO (1) | WO2014119367A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220032207A (ko) * | 2020-09-07 | 2022-03-15 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR20220043416A (ko) * | 2020-09-29 | 2022-04-05 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
US12258460B2 (en) | 2020-09-07 | 2025-03-25 | Sk Enpulse Co., Ltd. | Polishing pad and method of fabricating semiconductor device using the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3634342A1 (de) * | 2017-06-08 | 2020-04-15 | Apricot Gmbh | Silikonpad mit wirkstoffen zur hautpflege und gegen hautalterung |
JP6968651B2 (ja) * | 2017-10-12 | 2021-11-17 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP7259311B2 (ja) * | 2017-12-26 | 2023-04-18 | Dic株式会社 | 研磨パッド及び研磨パッド用ウレタン樹脂組成物 |
JP7644642B2 (ja) | 2021-03-26 | 2025-03-12 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
CN118530429B (zh) * | 2024-07-25 | 2024-12-13 | 山东一诺威新材料有限公司 | 耐高温耐水解聚氨酯抛光轮及其制备方法 |
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JP2000072844A (ja) | 1998-06-17 | 2000-03-07 | Mitsubishi Chemicals Corp | 注型用ポリウレタンエラストマ―組成物及びその成形品 |
JP2000017252A (ja) | 1998-06-29 | 2000-01-18 | Dainippon Ink & Chem Inc | 研磨材組成物及びその研磨材 |
JP3359629B1 (ja) | 2001-04-09 | 2002-12-24 | 東洋紡績株式会社 | ポリウレタン組成物からなる研磨パッド |
KR100877383B1 (ko) | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
US7097549B2 (en) * | 2001-12-20 | 2006-08-29 | Ppg Industries Ohio, Inc. | Polishing pad |
US20060089093A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
JP4884725B2 (ja) | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5008927B2 (ja) * | 2006-08-31 | 2012-08-22 | 東洋ゴム工業株式会社 | 研磨パッド |
JP2008221367A (ja) * | 2007-03-09 | 2008-09-25 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP5078000B2 (ja) * | 2007-03-28 | 2012-11-21 | 東洋ゴム工業株式会社 | 研磨パッド |
WO2010038725A1 (ja) * | 2008-09-30 | 2010-04-08 | Dic株式会社 | 研磨パッド用ウレタン樹脂組成物、ポリウレタン研磨パッド及びポリウレタン研磨パッドの製造法。 |
JP5356098B2 (ja) | 2009-04-03 | 2013-12-04 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
US8545292B2 (en) * | 2009-06-29 | 2013-10-01 | Dic Corporation | Two-component urethane resin composition for polishing pad, polyurethane polishing pad, and method for producing polyurethane polishing pad |
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2013
- 2013-01-29 JP JP2013014623A patent/JP5661129B2/ja not_active Expired - Fee Related
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2014
- 2014-01-15 WO PCT/JP2014/050577 patent/WO2014119367A1/ja active Application Filing
- 2014-01-15 US US14/761,292 patent/US9539693B2/en not_active Expired - Fee Related
- 2014-01-15 CN CN201480005111.XA patent/CN104955614A/zh active Pending
- 2014-01-15 KR KR1020157014799A patent/KR20150081350A/ko not_active Ceased
- 2014-01-15 SG SG11201505900XA patent/SG11201505900XA/en unknown
- 2014-01-22 TW TW103102291A patent/TWI492817B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220032207A (ko) * | 2020-09-07 | 2022-03-15 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
US12258460B2 (en) | 2020-09-07 | 2025-03-25 | Sk Enpulse Co., Ltd. | Polishing pad and method of fabricating semiconductor device using the same |
KR20220043416A (ko) * | 2020-09-29 | 2022-04-05 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN104955614A (zh) | 2015-09-30 |
US20150360341A1 (en) | 2015-12-17 |
JP2014144507A (ja) | 2014-08-14 |
US9539693B2 (en) | 2017-01-10 |
TWI492817B (zh) | 2015-07-21 |
WO2014119367A1 (ja) | 2014-08-07 |
SG11201505900XA (en) | 2015-08-28 |
TW201440955A (zh) | 2014-11-01 |
JP5661129B2 (ja) | 2015-01-28 |
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