KR20100032185A - 집전 전극이 구비된 박막형 태양전지와 그 제조방법 - Google Patents
집전 전극이 구비된 박막형 태양전지와 그 제조방법 Download PDFInfo
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- KR20100032185A KR20100032185A KR1020080091223A KR20080091223A KR20100032185A KR 20100032185 A KR20100032185 A KR 20100032185A KR 1020080091223 A KR1020080091223 A KR 1020080091223A KR 20080091223 A KR20080091223 A KR 20080091223A KR 20100032185 A KR20100032185 A KR 20100032185A
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- Prior art keywords
- electrode layer
- solar cell
- lower transparent
- photoelectric conversion
- transparent electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
- 투명 기판과 하부 투명 전극층 사이에 패터닝된 적어도 하나 이상의 집전(集電) 전극; 및상기 하부 투명 전극층 위에 순차적으로 형성된 광전변환 반도체층 및 상부 금속 전극층을 포함하는 박막형 태양전지.
- 투명 기판 위에 형성된 하부 투명 전극층과 광전변환 반도체층 사이에 패터닝된 적어도 하나 이상의 집전 전극; 및상기 광전변환 반도체층 위에 형성된 상부 금속 전극층을 포함하는 박막형 태양전지.
- 제1항 또는 제2항에 있어서,상기 광전변환 반도체층 위에 형성된 반사층을 더 포함하는 박막형 태양전지.
- 제1항 또는 제2항에 있어서,상기 집전 전극은 금속전극인 것을 특징으로 하는 박막형 태양전지.
- 제1항 또는 제2항에 있어서,상기 하부 투명 전극층은 산화아연(ZnO), 산화주석(SnO2) 및 인듐틴옥사이드(ITO) 중 적어도 어느 하나 이상인 것을 특징으로 하는 박막형 태양전지.
- 제1항 또는 제2항에 있어서,상기 하부 투명 전극층과 광전변환 반도체층의 접합면 및 상기 광전변환 반도체층과 상부 금속 전극층의 접합면 중 어느 하나 이상의 면은 텍스쳐링된 것을 특징으로 하는 박막형 태양전지.
- 투명 기판 위에 적어도 하나 이상의 집전 전극을 패터닝하는 단계; 및상기 집전 전극이 패터닝된 기판 위에 하부 투명 전극층, 광전변환 반도체층 및 상부 금속 전극층을 순차로 형성하는 단계를 포함하는 박막형 태양전지의 제조방법.
- 투명 기판 위에 형성된 하부 투명 전극층 위에 적어도 하나 이상의 집전 전극을 패터닝하는 단계; 및상기 집전 전극이 패터닝된 하부 투명 전극층 위에 광전변환 반도체층 및 상부 금속 전극층을 순차로 형성하는 단계를 포함하는 박막형 태양전지의 제조방법.
- 제7항 또는 제8항에 있어서,상기 집전 전극은 사진 식각, 스크린 프린팅, 롤투롤 및 잉크젯 방식 중 어느 하나를 이용하여 패터닝되는 것을 특징으로 하는 박막형 태양전지의 제조방법.
- 제7항 또는 제8항에 있어서,상기 광전변환 반도체층 위에 반사층을 형성하는 단계를 추가로 더 포함하는 것을 특징으로 하는 박막형 태양전지의 제조방법.
- 제7항 또는 제8항에 있어서,상기 하부 투명 전극층과 광전변환 반도체층의 접합면 및 상기 광전변환 반도체층과 상부 금속 전극층의 접합면 중 어느 하나 이상의 면은 텍스쳐링 공정으로 처리하는 것을 특징으로 하는 박막형 태양전지의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR20080091223A KR101484622B1 (ko) | 2008-09-17 | 2008-09-17 | 집전 전극이 구비된 박막형 태양전지와 그 제조방법 |
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KR20080091223A KR101484622B1 (ko) | 2008-09-17 | 2008-09-17 | 집전 전극이 구비된 박막형 태양전지와 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20100032185A true KR20100032185A (ko) | 2010-03-25 |
KR101484622B1 KR101484622B1 (ko) | 2015-01-20 |
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KR20080091223A Expired - Fee Related KR101484622B1 (ko) | 2008-09-17 | 2008-09-17 | 집전 전극이 구비된 박막형 태양전지와 그 제조방법 |
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Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101023144B1 (ko) * | 2004-02-26 | 2011-03-18 | 삼성에스디아이 주식회사 | 전사법을 이용한 태양전지 및 그 제조방법 |
KR101139453B1 (ko) * | 2006-07-03 | 2012-04-30 | 엘지전자 주식회사 | 박막형 태양전지 및 그 제조방법 |
JP4955367B2 (ja) * | 2006-11-01 | 2012-06-20 | 信越化学工業株式会社 | 単結晶シリコン太陽電池の製造方法 |
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KR101484622B1 (ko) | 2015-01-20 |
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