TWI463680B - Transparent thin film solar cells - Google Patents
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- TWI463680B TWI463680B TW098120818A TW98120818A TWI463680B TW I463680 B TWI463680 B TW I463680B TW 098120818 A TW098120818 A TW 098120818A TW 98120818 A TW98120818 A TW 98120818A TW I463680 B TWI463680 B TW I463680B
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- 239000010409 thin film Substances 0.000 title claims description 36
- 238000002834 transmittance Methods 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005538 encapsulation Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 6
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 6
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229920002457 flexible plastic Polymers 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- YGBGWFLNLDFCQL-UHFFFAOYSA-N boron zinc Chemical compound [B].[Zn] YGBGWFLNLDFCQL-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FWPIOHJLMYTOSC-UHFFFAOYSA-N [B]=O.[Zn] Chemical compound [B]=O.[Zn] FWPIOHJLMYTOSC-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/37—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
本發明係關於一種太陽能電池,尤其係關於一種藉由增進透光區域之光穿透率而提昇透光率之透光型薄膜太陽能電池。
太陽能電池(solar cell)係為一種清潔且環保之能源轉換裝置,目前太陽能電池的種類依其半導體材料大致上可分成結晶矽太陽能電池、非晶矽太陽能電池、Ⅲ-Ⅴ族化合物太陽能電池以及Ⅱ-Ⅵ族化合物太陽能電池等。太陽能電池之結構主要包含基板、前電極層、吸收層與背電極層,前電極層之材質可為TCO,背電極層之材質可為金屬等,吸收層基本上為一p-n二極體的結構,當入射光進入p-n二極體內產生電子-電洞對,並藉由內建電場作用使電子和電洞往相反的方向移動,而可各自二端電極輸出電壓伏特值。
一般而言,太陽能電池係可設置於建築物頂部或其他易接收光照的地點,然而當太陽能電池設置於玻璃帷幕等須有光線進入建築物內之地點時,若太陽能電池之背電極層為金屬材質,則光線行至背電極層時會受金屬背電極層阻隔或因金屬反射而無法穿透金屬背電極層並進入室內,造成太陽能電池之應用範圍備受限制。
為改善光線無法穿透太陽能電池所造成之缺點,遂有透光型(see through)太陽能電池之研發。例如美國專利公告第6,858,461號揭示一種部份透明之光伏特模組(Partially transparent photovoltaic modules)(請參閱第一圖),該光伏特模組110包括一透明基板114、一透明導電層118、一光電轉換層120以及一金屬電極層122,其中,光電轉換層120以及金屬電極層122係以雷射刻劃(lacer scribing)方式形成複數條溝槽(groove)140,藉以使光伏特模組110達到部份透光之目的;此外,美國專利公告第4,795,500號提出一種光伏特元件(Photovoltaic device)(請參閱第二圖),該光伏特元件包含一透明基板1、一透明導電層3、一光電轉換層4以及一金屬電極層5,其中,至少於金屬電極層5形成複數個孔洞6,且該些孔洞6可延伸設於光電轉換層4,進而達到透光目的。
雖該些先前技術藉由開設溝槽或孔洞可增進太陽能電池之透光率,然而其可增進之透光率仍有限;此外,由於溝槽或孔洞的設置可能需移除部份光電轉換層,為增進透光率而開設過多之溝槽或孔洞,反而會降低太陽能電池應具備之光電轉換效能,因此為維持一定程度之光電轉換效能,溝槽或孔洞之開設面積與數量需有一定限制,故現階段透光型太陽能電池之透光率的增進之仍備受限制。因此為擴增透光型太陽能電池的應用性,透光型太陽能電池之透光率的提昇係為當務之急。
為解決習知透光型太陽能電池之有限的透光率所致應用受限的問題,本發明係提供一種增進透光率之透光型薄膜太陽能電池,其係利用透光處具有特定折射率之材料層的設置,達到有效提昇透光率之目的。
為達上述目的,本發明係提供一種透光型薄膜太陽能電池,至少包括依序堆疊形成之一基板、一前電極層、一光吸收層、一背電極層、一透光率增進層以及一封裝層,至少背電極層中形成有複數個透光區域,且該些透光區域可自背電極層進一步延伸至光吸收層或前電極層,其中部份之透光率增進層與部份之封裝層係位於該些透光區域內,而位於該些透光區域內之封裝層係填滿該些透光區域;該透光率增進層之折射率係介於位於該些透光區域內之該透光率增進層所覆蓋之介質所具折射率與覆蓋該透光率增進層之介質所具折射率之間,其中透光率增進層所覆蓋之介質包含光吸收層或前電極層,覆蓋該透光率增進層之介質包含封裝層,亦即透光率增進層之折射率係可為1~4,因此藉由具有特定折射率之透光率增進層的設置,可促進透光區域之入射光穿透光吸收層或背電極層,並進入室內,藉以有效提昇透光型薄膜太陽能電池之光穿透率。
此外,透光率增進層之材質係可為絕緣體(insulation),藉以保護背電極層,並可提供與封裝層間之良好黏附性(adhesion),以增進封裝效果。
另一方面,該透光型薄膜太陽能電池之各結構層的材質分別係:封裝層之材質係選自於由醋酸乙酯(ethylene vinyl acetate copolymer,EVA)以及聚乙烯丁醛(polyvinyl butyral,PVB)所組成之群組;光吸收層之材質係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成之群組,或可為碲化鎘(CdTe)等材質;前電極層之材質係透明導電氧化物(transparent conducting oxide,TCO),此透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之群組;基板之材質係選自於由玻璃、石英、透明塑膠、透明高分子以及可撓性塑膠所組成的群組,當基板係為一透明玻璃基板,其材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成之群組;背電極層之材料係包含金屬例如選自於由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
由於透光率增進層之折射率係可依其所覆蓋介質之材質種類的折射率以及覆蓋於透光率增進層上之介質的材質種類的折射率進行調變,藉以使進入透光區域之入射光的透光率提昇,增加穿透光吸收層或背電極層之入射光穿透量,有效提昇透光型薄膜太陽能電池之光透射率;此外,藉由本發明透光型薄膜太陽能電池中具有特定折射率之透光率增進層的設置,可於不開設過多透光區域而降低光吸收層之光吸收率的情況下,增進太陽能電池之透光率,使光吸收層之光電轉換效能可維持於所需程度,達到兼顧透光率與光電轉換效能之目的,並解決習知透光型太陽能電池之有限透光率所致應用受限的問題,以擴展透光型薄膜太陽能電池之應用性與使用普及率。
以下將配合圖式進一步說明本發明的實施方式,下述所列舉的實施例係用以闡明本發明,並非用以限定本發明之範圍,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可做些許更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
請參閱第三A圖,該圖係本發明透光型薄膜太陽能電池結構之一較佳實施例的剖視圖。該薄膜太陽能電池200係至少包括自入射光側依序堆疊形成之一基板210、一前電極層220、一光吸收層230、一背電極層240、一透光率增進層250以及一封裝層260,封裝層260上可再設置一封裝玻璃層270,至少背電極層240中開設形成有複數個透光區域280,其中部份之透光率增進層250與部份之封裝層260係位於該些透光區域280內,且位於該些透光區域280內之封裝層260係填滿該些透光區域280。透光率增進層250之折射率係可依其所覆蓋介質之材質種類的折射率以及覆蓋於透光率增進層250上之介質的材質種類的折射率進行調變,與此例中透光率增進層250之折射率係介於位在該些透光區域280內之該透光率增進250層所覆蓋之介質即光吸收層230所具折射率與覆蓋於位在該些透光區域280內之該透光率增進層250的介質即封裝層260所具折射率之間,亦即透光率增進層250之折射率係介於光吸收層230所具折射率與封裝層260所具折射率之間,藉以增進入射光之光穿透率。
此外,該些透光區域280可自背電極層240進一步延伸至光吸收層230(請參閱第三B圖),或再延伸開設至前電極層220,此時,透光率增進層250之折射率係介於位在該些透光區域280內之該透光率增進層250所覆蓋之介質即前電極層220所具折射率與覆蓋於位在該些透光區域280內之該透光率增進層250的介質即封裝層260所具折射率之間,亦即透光率增進層250之折射率係介於前電極層220所具折射率與封裝層260所具折射率之間,藉以增進入射光之光穿透率。
另一方面,該透光型薄膜太陽能電池200之各結構層的材質分別係:基板210之材質係選自於由玻璃、石英、透明塑膠、透明高分子以及可撓性塑膠所組成的群組,當基板210係為一透明玻璃基板,其材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成之群組。
前電極層220之材質係透明導電氧化物(transparent conducting oxide,TCO),此透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之群組,但不以此為限,凡是可透光且具導電性之材料皆可應用於此。
光吸收層230之材質係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成之群組,或可為碲化鎘(CdTe)等材質,但不限於此,凡可應用於覆板型(superstrate)薄膜太陽能電池且具有光電轉換效能之材料皆可應用於此。
背電極層240之材料係包含金屬,例如選自於由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組,其他具有導電性之材料亦可應用於此。
封裝層260之材質係選自於由醋酸乙酯(ethylene vinyl acetate copolymer,EVA)以及聚乙烯丁醛(polyvinyl butyral,PVB)所組成之群組。
透光率增進層250之材質係具有特定之折射率,且該折射率之數值係介於位在透光區域280內之透光率增進層250所覆蓋介質具有的折射率與覆蓋透光率增進層250之介質具有的折射率之間,於本案前述該些實施例中,透光率增進層250之折射率可介於1~4,亦即其可應用材質係為具有折射率1~4之物質,例如包含二氧化矽(SiO2
)之材質等。
前述透光型薄膜太陽能電池200之各層體係可依序以習知方法而逐層堆疊形成,該方法可包含濺鍍、常壓化學氣相沈積、低壓化學氣相沈積、電子迴旋共振法、直流輝光放電法、射頻輝光放電法以及熱絲法等,但不以此為限,凡是可於一層體之上形成另一層體的方法皆可應用於此。此外,該些透光區域280係可藉由雷射方式形成之,而透光率增進層250則可利用化學氣相沈積、物理氣相沈積或塗佈的方式將其填入透光區域280內。
綜上所述,藉由具有特定折射率之透光率增進層250之設置,可增進進入透光區域280內之入射光的透光率,而促進入射光穿透光吸收層230與背電極層240之機率,增加室內之光透射量,達到有效提昇透光型薄膜太陽能電池之透光率的目的。
1...透明基板
3...透明導電層
5...金屬電極層
6...孔洞
110...光伏特模組
114...透明基板
118...透明導電層
120...光電轉換層
122...金屬電極層
140...溝槽
200...薄膜太陽能電池
210...基板
220...前電極層
230...光吸收層
240...背電極層
250...透光率增進層
260...封裝層
270...封裝玻璃層
280...透光區域
第一圖係先前技術一種部份透明之光伏特模組的結構示意圖。
第二圖係先前技術一種光伏特元件的結構示意圖。
第三A圖係本發明透光型薄膜太陽能電池結構之一較佳實施例的剖視圖。
第三B圖係本發明透光型薄膜太陽能電池結構之另一較佳實施例的剖視圖。
200...薄膜太陽能電池
210...基板
220...前電極層
230...光吸收層
240...背電極層
250...透光率增進層
260...封裝層
270...封裝玻璃層
280...透光區域
Claims (17)
- 一種透光型薄膜太陽能電池,至少包括依序堆疊形成之一基板、一前電極層、一光吸收層、一背電極層、一透光率增進層以及一封裝層,至少該背電極層中形成有複數個透光區域,其中部份之該透光率增進層與部份之該封裝層係位於該些透光區域內,該透光率增進層之折射率係介於位於該些透光區域內之該透光率增進層所覆蓋之介質的折射率與覆蓋該透光率增進層之介質的折射率之間。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中位於該些透光區域內之該封裝層係填滿該些透光區域,且覆蓋該透光率增進層之介質係為該封裝層。
- 如申請專利範圍第1項或第2項所述之透光型薄膜太陽能電池,其中位於該些透光區域內之該透光率增進層所覆蓋之介質係為該光吸收層。
- 如申請專利範圍第3項所述之透光型薄膜太陽能電池,其中該透光率增進層之折射率係為1~4。
- 如申請專利範圍第1項或第2項所述之透光型薄膜太陽能電池,其中該些透光區域係進一步延伸至該光吸收層或該前電極層。
- 如申請專利範圍第5項所述之透光型薄膜太陽能電池,其中位於該些透光區域內之該透光率增進層所覆蓋之介質係為該前電極層。
- 如申請專利範圍第6項所述之透光型薄膜太陽能電池,其中該透光率增進層之折射率係為1~4。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該透光率增進層之材質係為絕緣體(insulation)。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該封裝層之材質係選自於由醋酸乙酯(ethylene vinyl acetate copolymer,EVA)以及聚乙烯丁醛(polyvinyl butyral,PVB)所組成之群組。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該光吸收層之材質係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成之群組。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該光吸收層之材質係為碲化鎘(CdTe)。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該前電極層之材質係透明導電氧化物(transparent conducting oxide,TCO)。
- 如申請專利範圍第12項所述之透光型薄膜太陽能電池,其中該透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之群組。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該基板之材質係選自於由玻璃、石英、透明塑膠、透明高分子以及可撓性塑膠所組成的群組。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該基板係為一透明玻璃基板,其材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成之群組。
- 如申請專利範圍第1項所述之透光型薄膜太陽能電池,其中該背電極層之材料係包含金屬。
- 如申請專利範圍第16項所述之透光型薄膜太陽能電池,其中該金屬係選自於由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
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US4158717A (en) * | 1977-02-14 | 1979-06-19 | Varian Associates, Inc. | Silicon nitride film and method of deposition |
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPS625671A (ja) * | 1985-07-02 | 1987-01-12 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
AU2233900A (en) * | 1999-03-23 | 2000-09-28 | Kaneka Corporation | Photovoltaic module |
US6573652B1 (en) * | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
AU7684001A (en) * | 2000-07-06 | 2002-01-21 | Bp Corp North America Inc | Partially transparent photovoltaic modules |
US7098395B2 (en) * | 2001-03-29 | 2006-08-29 | Kaneka Corporation | Thin-film solar cell module of see-through type |
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US5254179A (en) * | 1991-02-21 | 1993-10-19 | Solems S.A. | Photovoltaic device and solar module having a partial transparency |
US5656098A (en) * | 1992-03-03 | 1997-08-12 | Canon Kabushiki Kaisha | Photovoltaic conversion device and method for producing same |
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