KR20070117005A - 박막형성장치의 세정방법 - Google Patents
박막형성장치의 세정방법 Download PDFInfo
- Publication number
- KR20070117005A KR20070117005A KR1020077027864A KR20077027864A KR20070117005A KR 20070117005 A KR20070117005 A KR 20070117005A KR 1020077027864 A KR1020077027864 A KR 1020077027864A KR 20077027864 A KR20077027864 A KR 20077027864A KR 20070117005 A KR20070117005 A KR 20070117005A
- Authority
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- South Korea
- Prior art keywords
- gas
- cleaning
- thin film
- film forming
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims abstract description 211
- 238000000034 method Methods 0.000 title claims description 77
- 239000010409 thin film Substances 0.000 title claims description 69
- 239000007789 gas Substances 0.000 claims abstract description 346
- 238000006243 chemical reaction Methods 0.000 claims abstract description 142
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 70
- 239000011737 fluorine Substances 0.000 claims abstract description 70
- 238000010438 heat treatment Methods 0.000 claims abstract description 57
- 239000000654 additive Substances 0.000 claims description 38
- 230000000996 additive effect Effects 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 38
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 31
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 31
- 230000004913 activation Effects 0.000 claims description 13
- 150000002221 fluorine Chemical class 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 60
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 29
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 29
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 24
- 238000005406 washing Methods 0.000 abstract description 18
- 238000005530 etching Methods 0.000 description 68
- 235000012431 wafers Nutrition 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 239000010453 quartz Substances 0.000 description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 15
- 239000007795 chemical reaction product Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000010926 purge Methods 0.000 description 14
- 230000006866 deterioration Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- -1 perfluoro compound Chemical class 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OQNXPQOQCWVVHP-UHFFFAOYSA-N [Si].O=[Ge] Chemical compound [Si].O=[Ge] OQNXPQOQCWVVHP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (2)
- 박막형성장치의 반응실내에 처리가스를 공급하여 피처리체에 박막을 형성한 후, 장치내부에 부착한 부착물을 제거하는 박막형성장치의 세정방법에 있어서,상기 반응실내를 소정의 온도로 가열하는 가열공정과,상기 가열공정에 의해 소정의 온도로 가열된 반응실내에, 불소가스와 해당 불소가스의 활성화를 촉진 가능하게 하는 첨가가스를 포함하는 클리닝가스를 공급하여, 해당 클리닝가스를 소정의 온도로 가열함에 의해, 클리닝가스에 포함되는 불소가스를 활성화시키고, 해당 활성화된 불소가스에 의해, 상기 부착물을 제거하여 박막형성장치의 내부를 세정하는 세정공정을 구비하고,상기 세정공정에서, 소정의 온도로 가열된 반응실내에, 불소가스와 불화수소가스를 포함하는 클리닝가스를 공급함에 의해, 상기 부착물을 제거하여 박막형성장치의 내부를 세정하고,상기 불소가스와 상기 불화수소가스를, 그 유량비가 1:3∼3:1의 범위내가 되도록 상기 클리닝가스에 포함시키는 것을 특징으로 하는 세정방법.
- 제 1 항에 있어서, 상기 불소가스와 상기 불화수소가스를, 그 유량비가 1:1이 되도록 상기 클리닝가스에 포함시키는 것을 특징으로 하는 박막형성장치의 세정방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001174129 | 2001-06-08 | ||
JPJP-P-2001-00174129 | 2001-06-08 | ||
JP2001331590A JP3421329B2 (ja) | 2001-06-08 | 2001-10-29 | 薄膜形成装置の洗浄方法 |
JPJP-P-2001-00331590 | 2001-10-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037015945A Division KR100825135B1 (ko) | 2001-06-08 | 2002-02-20 | 박막형성장치의 세정방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20070117005A true KR20070117005A (ko) | 2007-12-11 |
Family
ID=26616617
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077027864A Ceased KR20070117005A (ko) | 2001-06-08 | 2002-02-20 | 박막형성장치의 세정방법 |
KR1020037015945A Expired - Lifetime KR100825135B1 (ko) | 2001-06-08 | 2002-02-20 | 박막형성장치의 세정방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037015945A Expired - Lifetime KR100825135B1 (ko) | 2001-06-08 | 2002-02-20 | 박막형성장치의 세정방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6925731B2 (ko) |
EP (1) | EP1394842B1 (ko) |
JP (1) | JP3421329B2 (ko) |
KR (2) | KR20070117005A (ko) |
CN (1) | CN1327485C (ko) |
DE (1) | DE60228568D1 (ko) |
TW (1) | TWI266811B (ko) |
WO (1) | WO2002101805A1 (ko) |
Families Citing this family (265)
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JP2004335789A (ja) * | 2003-05-08 | 2004-11-25 | Tadahiro Omi | 基板処理装置のクリーニング方法 |
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US20050250347A1 (en) * | 2003-12-31 | 2005-11-10 | Bailey Christopher M | Method and apparatus for maintaining by-product volatility in deposition process |
US20050211264A1 (en) * | 2004-03-25 | 2005-09-29 | Tokyo Electron Limited Of Tbs Broadcast Center | Method and processing system for plasma-enhanced cleaning of system components |
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US20060017043A1 (en) * | 2004-07-23 | 2006-01-26 | Dingjun Wu | Method for enhancing fluorine utilization |
US8017062B2 (en) * | 2004-08-24 | 2011-09-13 | Yeshwanth Narendar | Semiconductor processing components and semiconductor processing utilizing same |
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TWI365919B (en) * | 2004-12-28 | 2012-06-11 | Tokyo Electron Ltd | Film formation apparatus and method of using the same |
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US7494943B2 (en) * | 2005-10-20 | 2009-02-24 | Tokyo Electron Limited | Method for using film formation apparatus |
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US4872938A (en) * | 1987-07-16 | 1989-10-10 | Texas Instruments Incorporated | Processing apparatus |
JP2746448B2 (ja) * | 1990-02-07 | 1998-05-06 | セントラル硝子株式会社 | 混合ガス組成物 |
GB9011535D0 (en) * | 1990-05-23 | 1990-07-11 | Oxford Lasers Ltd | Gas management system |
JPH0496222A (ja) * | 1990-08-03 | 1992-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US5609721A (en) * | 1994-03-11 | 1997-03-11 | Fujitsu Limited | Semiconductor device manufacturing apparatus and its cleaning method |
US5966623A (en) * | 1995-10-25 | 1999-10-12 | Eastman Kodak Company | Metal impurity neutralization within semiconductors by fluorination |
JPH1072672A (ja) * | 1996-07-09 | 1998-03-17 | Applied Materials Inc | 非プラズマ式チャンバクリーニング法 |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
JP3594759B2 (ja) * | 1997-03-19 | 2004-12-02 | 株式会社日立製作所 | プラズマ処理方法 |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
JP2000265276A (ja) * | 1999-01-12 | 2000-09-26 | Central Glass Co Ltd | クリーニングガス |
US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
JP3456933B2 (ja) | 1999-12-28 | 2003-10-14 | 株式会社東芝 | 半導体処理装置のクリーニング方法および半導体処理装置 |
JP2001267241A (ja) | 2000-03-10 | 2001-09-28 | L'air Liquide | クリーニング方法及び装置並びにエッチング方法及び装置 |
US20030010354A1 (en) | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
DE10029523A1 (de) * | 2000-06-21 | 2002-01-10 | Messer Griesheim Gmbh | Verfahren und Vorrichtung zum Reinigen eines PVD- oder CVD-Reaktors sowie von Abgasleitungen desselben |
-
2001
- 2001-10-29 JP JP2001331590A patent/JP3421329B2/ja not_active Expired - Lifetime
-
2002
- 2002-02-20 EP EP02700635A patent/EP1394842B1/en not_active Expired - Lifetime
- 2002-02-20 KR KR1020077027864A patent/KR20070117005A/ko not_active Ceased
- 2002-02-20 US US10/479,718 patent/US6925731B2/en not_active Expired - Lifetime
- 2002-02-20 DE DE60228568T patent/DE60228568D1/de not_active Expired - Lifetime
- 2002-02-20 CN CNB028155122A patent/CN1327485C/zh not_active Expired - Lifetime
- 2002-02-20 KR KR1020037015945A patent/KR100825135B1/ko not_active Expired - Lifetime
- 2002-02-20 WO PCT/JP2002/001492 patent/WO2002101805A1/ja active IP Right Grant
- 2002-03-08 TW TW091104642A patent/TWI266811B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1394842A1 (en) | 2004-03-03 |
CN1539159A (zh) | 2004-10-20 |
EP1394842B1 (en) | 2008-08-27 |
KR100825135B1 (ko) | 2008-04-24 |
JP2003059915A (ja) | 2003-02-28 |
KR20040008212A (ko) | 2004-01-28 |
CN1327485C (zh) | 2007-07-18 |
EP1394842A4 (en) | 2005-08-24 |
US20050090123A1 (en) | 2005-04-28 |
DE60228568D1 (de) | 2008-10-09 |
TWI266811B (en) | 2006-11-21 |
JP3421329B2 (ja) | 2003-06-30 |
WO2002101805A1 (fr) | 2002-12-19 |
US6925731B2 (en) | 2005-08-09 |
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