KR20060090446A - A light emitting device having a plurality of light emitting cells insulated from a substrate and a method of manufacturing the same - Google Patents

Abstract

A light emitting device having a plurality of light emitting cells insulated from a substrate and a method of manufacturing the same are disclosed. This light emitting element includes a substrate. The plurality of light emitting cells are spaced apart from each other on the substrate. Meanwhile, an ion implantation layer interposed between the substrate and the plurality of light emitting cells is converted into an insulating layer. Accordingly, a light emitting device capable of forming a plurality of light emitting cells insulated from the substrate on a conductive silicon carbide substrate having excellent thermal conductivity and low cost, and electrically connecting the light emitting cells to be driven under an AC power source, is provided. Can provide.

Light emitting cell, AC power supply, ion implantation layer, silicon carbide (SiC)

Description

LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS INSULATED FROM A SUBSTRATE AND METHOD OF FABRICATING THE SAME}

1A and 1B are circuit diagrams for describing an operating principle of a light emitting device having a plurality of light emitting cells according to an exemplary embodiment of the present invention.

2 is a flowchart illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to an embodiment of the present invention.

3 to 6 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to an embodiment of the present invention.

7 is a flowchart illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to another embodiment of the present invention.

8 to 12 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to another embodiment of the present invention.

<Brief description of the major symbols in the drawings>

51: substrate, 51a ion implantation layer,

53a: buffer layer, 55a: N-type semiconductor layer,

56: light emitting cell, 57a: active layer,

59a: P-type semiconductor layer, 61a; Metal,

63: ohmic contact layer, 65: metal wires

The present invention relates to a light emitting device, and more particularly, to a light emitting device having a plurality of light emitting cells that can be driven directly by using an AC power supply by having a plurality of light emitting cells forming a series array on one substrate. will be.

A light emitting diode is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor having a majority carrier as an electron and a P-type semiconductor having a plurality of carriers are bonded to each other, and emits predetermined light by recombination of these electrons and holes. Such a light emitting diode is used as a display device and a backlight, and is replacing a conventional incandescent lamp and a fluorescent lamp, and is widening its use area for general lighting purposes.

Light emitting diodes consume less power and have a longer lifetime than conventional light bulbs or fluorescent lamps. Compared with the conventional lighting device, the power consumption of the light emitting diode is only a few to several tens of times, and the lifetime is several to several tens of times, which is very excellent in terms of power consumption reduction and durability.

However, the light emitting diode repeats on / off in accordance with the direction of the current. Accordingly, when the light emitting diode is directly connected to an AC power source, the light emitting diode is easily broken. Therefore, it is difficult to connect a conventional light emitting diode directly to a home AC power source and use it for general lighting.

On the other hand, light emitting diodes are manufactured by forming a buffer layer on a substrate and then sequentially forming semiconductor layers on the buffer layer. As the substrate, a sapphire or silicon carbide (SiC) substrate is generally used. Silicon carbide substrates are more thermally conductive than sapphire substrates and are therefore preferred for light emitting devices that require heat dissipation characteristics. However, silicon carbide substrates are generally electrically conductive, and in some cases, it is necessary to insulate the semiconductor layers from the silicon carbide substrate.

Although a silicon carbide substrate having high thermal conductivity and insulation is used, such a substrate is expensive and increases the manufacturing cost of the light emitting device.

An object of the present invention is to provide a light emitting device and a method for manufacturing the same, which are made of light emitting diodes, and which can be driven by being connected directly to an AC power source.

Another object of the present invention is to provide a light emitting device that can be driven under an AC power source using a low cost conductive silicon carbide substrate, and a method of manufacturing the same.

In order to achieve the above technical problem, the present invention provides a light emitting device having a plurality of light emitting cells insulated from a substrate and a method of manufacturing the same. The light emitting device according to an aspect of the present invention includes a substrate. A plurality of light emitting cells are spaced apart from each other on the substrate. On the other hand, an ion implantation layer interposed between the substrate and the plurality of light emitting cells is converted into an insulating layer is interposed. The plurality of light emitting cells may be insulated from the substrate by the ion implantation layer, thereby adopting a conductive silicon carbide substrate.

The light emitting device of the present invention has a plurality of light emitting diodes on one substrate. Therefore, the "light emitting cell" means each of the plurality of light emitting diodes formed on one substrate.

The ion implantation layer may be an insulating layer in which ions are implanted into the surface of the silicon carbide substrate by an ion implant and the surface of the substrate is converted. In addition, the ions may be oxygen ions. Thus, the substrate surface is converted to a silicon oxide layer. In addition, a buffer layer may be interposed between the ion implantation layer and the light emitting cells.

In another embodiment of the present invention, the ion implantation layer may be a buffer layer in which ions are implanted by an ion implant and converted into an insulating layer. The buffer layer is a III-N-based material, and the ions may be alkali metal ions, alkaline earth metal ions, or transition metal ions, and preferably, the ions may be iron (Fe) ions.

According to another aspect of the present invention, a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate includes preparing a substrate. An ion implantation layer is formed by implanting ions into the surface of the substrate using an ion implant technique. A plurality of light emitting cells spaced apart from each other is formed on the substrate on which the ions are implanted. Accordingly, a plurality of light emitting cells insulated from the substrate by the ion implantation layer may be formed.

Meanwhile, before forming the plurality of light emitting cells, a buffer layer may be formed on the ion implantation layer.

According to another aspect of the present invention, a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate includes preparing a substrate. A buffer layer is formed on the substrate. Subsequently, ions are implanted into the buffer layer using ion implant technology to convert the buffer layer into an insulating layer. Thereafter, a plurality of light emitting cells spaced apart from each other are formed on the buffer layer converted into the insulating layer. Accordingly, a plurality of light emitting cells insulated from the substrate may be formed by the buffer layer converted into the insulating layer.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;

The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1A and 1B are circuit diagrams illustrating an operation principle of a light emitting device having a plurality of light emitting cells according to embodiments of the present invention.

Referring to FIG. 1A, light emitting cells 31a, 31b, and 31c are connected in series to form a first series light emitting cell array 31, and another light emitting cells 33a, 33b, and 33c are connected in series to each other. Two series light emitting cell arrays 33 are formed. Here, the "serial light emitting cell array" means a structure in which a plurality of light emitting cells are connected in series.

Both ends of the first and second series arrays 31 and 33 are connected to an AC power source 35 and a ground, respectively. The first and second series arrays are connected in parallel between the AC power source 35 and ground. That is, both ends of the first and second series arrays are electrically connected to each other.

Meanwhile, the first and second series arrays 31 and 33 are disposed to drive the light emitting cells by currents flowing in opposite directions. That is, as shown, the anode and cathode of the light emitting cells included in the first series array 31 and the anode and the cathode of the light emitting cells included in the second series array 33 are opposite to each other. Is placed.

Therefore, when the AC power source 35 is in a positive phase, the light emitting cells included in the first series array 31 are turned on to emit light, and the light emitting cells included in the second series array 33 are turned off. On the contrary, when the AC power source 35 is in a negative phase, the light emitting cells included in the first series array 31 are turned off, and the light emitting cells included in the second series array 33 are turned on.

As a result, the first and second series arrays 31 and 33 alternately turn on and off by an AC power supply, so that the light emitting device including the first and second series arrays continuously emits light. Release.

The light emitting chips composed of one light emitting diode may be connected and driven using an AC power source as in the circuit of FIG. 1A, but the space occupied by the light emitting chips increases.

However, since the light emitting device of the present invention can be driven by connecting an AC power source to one chip, the space occupied by the light emitting device does not increase.

Meanwhile, although the circuit of FIG. 1A is configured such that both ends of the first and second series arrays are connected to the AC power source 35 and the ground, respectively, the both ends may be connected to both terminals of the AC power source. In addition, the first and second series arrays are each composed of three light emitting cells, but this is only an example to help explain, and the number of light emitting cells may be further increased as necessary. In addition, the number of the serial arrays may be further increased.

Referring to FIG. 1B, the light emitting cells 41a, 41b, 41c, 41d, 41e, and 41f constitute a series light emitting cell array 41. Meanwhile, a bridge rectifier including light emitting cells D1, D2, D3, and D4 is disposed between the AC power source 45, the series light emitting cell array 41, and the ground and the series light emitting cell array 41. An anode terminal of the series light emitting cell array 41 is connected to a node between the light emitting cells D1 and D2, and a cathode terminal is connected to a node between light emitting cells D3 and D4. On the other hand, the terminal of the AC power supply 45 is connected to the node between the light emitting cells (D1, D4), the ground is connected to the node between the light emitting cells (D2, D3).

When the AC power source 45 has a positive phase, the light emitting cells D1 and D3 of the bridge rectifier are turned on and the light emitting cells D2 and D4 are turned off. Therefore, the current flows to the ground via the light emitting cell D1 of the bridge rectifier, the series light emitting cell array 41 and the light emitting cell D3 of the bridge rectifier.

On the other hand, when the AC power source 45 has a negative phase, the light emitting cells D1 and D3 of the bridge rectifier are turned off and the light emitting cells D2 and D4 are turned on. Accordingly, the current flows to the AC power through the light emitting cell D2 of the bridge rectifier, the series light emitting cell array 41 and the light emitting cell D4 of the bridge rectifier.

As a result, by connecting the bridge rectifier to the series light emitting cell array 41, it is possible to continuously drive the series light emitting cell array 41 using the AC power supply 45. Here, although the terminals of the bridge rectifier are configured to be connected to the AC power source 45 and the ground, the terminals of the bridge rectifier may be configured to be connected to both terminals of the AC power source.

According to this embodiment, one series of light emitting cell arrays can be electrically connected to and driven by an AC power source, and the use efficiency of the light emitting cells can be improved compared to the light emitting device of FIG.

The light emitting cells described with reference to FIG. 1A or 1B are disposed on a single substrate.

Therefore, when the substrate is conductive, the light emitting cells must be insulated from the substrate. Hereinafter, a method of manufacturing a light emitting device having light emitting cells insulated from a substrate will be described.

2 is a flowchart illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to an embodiment of the present invention, and FIGS. 3 to 6 illustrate a method of manufacturing the light emitting device. Cross-sectional views for explaining according to the flowchart.

2 and 3, first, the substrate 51 is prepared (step 1). The substrate may be, for example, a conductive silicon carbide substrate, a semiconductor gallium nitride (GaN), an aluminum nitride (AlN) substrate, or the like.

Impurity ions are implanted into the surface of the substrate 51 to convert the surface of the substrate into an insulating layer (step 3). Here, the surface of the substrate in which the ions are implanted and converted into the insulating layer is defined as the ion implantation layer 51a. The ions may be implanted using an ion implant technique and implanted at a depth of 1-10 μm from the substrate surface. The type of ion is selected according to the constituents of the substrate.

For example, when the substrate is a silicon carbide substrate, the ions may be oxygen ions. Oxygen ions can be implanted into the silicon carbide substrate by the ion implant technique in a dose of 10 ¹⁴ ions / cm ² to 10 ¹⁹ ions / cm ² and combined with silicon to form a silicon oxide layer. After ion implantation to form the silicon oxide layer, a heat treatment process may be added.

Meanwhile, after the ions are implanted, the heat treatment process may be performed in an oxygen atmosphere.

In this case, the ions may be silicon, carbon, inert gas, nitrogen or hydrogen ions in addition to oxygen ions. These ions create defects on the surface of the silicon carbide substrate, and a silicon oxide layer is easily formed from the defects during heat treatment in an oxygen atmosphere.

When the substrate is AlN, a method of forming an oxide layer similarly to SiC may be used. That is, after implanting oxygen ions or implanting other ions to generate a defect, the aluminum oxide layer may be formed on the surface of the substrate by heat treatment.

In the case where the substrate is an N-type GaN, an electron acceptor may be implanted into an insulating layer. The electron acceptor may be an alkali metal, an alkaline earth metal or a transition metal. For example, the electron acceptor may be Mg ion or Fe ion.

2 and 4, a buffer layer 53 is formed on the ion implantation layer 51a. The buffer layer may be a III-N based material, such as AlN, InN or GaN. The buffer layer may be formed using metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE).

An N-type semiconductor layer 55, an active layer 57, and a P-type semiconductor layer 59 are formed on the buffer layer 53 (step 7). The N-type semiconductor layer 55, the active layer 57, and the P-type semiconductor layer 59 may be formed using MOCVD, MBE, or HVPE.

The N-type semiconductor layer 55 may be a GaN-based implanted N-type impurity, for example, an N-type Al _x Ga _1-x N (0≤x≤1) film, but is not limited thereto and may be formed of various semiconductor layers. have. In addition, the P-type semiconductor layer 59 may be a GaN-based implanted P-type impurity, for example, a P-type Al _x Ga _1-x N (0 ≦ x ≦ 1) film, but is not limited thereto and may be formed of various semiconductor layers. Can be. The N-type and P-type semiconductor layers may be In _x Ga _1-x N (0 ≦ x ≦ 1) layers, and may be formed of a multilayer. Meanwhile, Si may be used as the N-type impurity, and magnesium (Mg) may be used as the P-type impurity.

The active layer 57 generally has a multilayer film structure in which a quantum well layer and a barrier layer are repeatedly formed. The quantum well layer and the barrier layer may be formed using an Al _x In _y Ga _1-xy N (0 ≦ x, y ≦ 1, 0 ≦ x + y ≦ 1) compound, and an N-type or P-type impurity. This can be injected.

A metal layer 61 may be further formed on the P-type semiconductor layer 59. The metal layer 61 may be a transparent electrode layer and is formed to supply a uniform current to the P-type semiconductor layer 59.

Meanwhile, the semiconductor layers 55, 57, and 59 may be sequentially formed on the ion implantation layer 51a. That is, the buffer layer 53 may be omitted.

2 and 5, the metal layer 61, the P-type semiconductor layer 59, the active layer 57, the N-type semiconductor layer 55, and the buffer layer 53 are patterned to separate cells, and the N-type. The top surface of the semiconductor layer 55 is exposed (step 9). As a result, the light emitting cells 56 having the exposed N-type semiconductor layer 55a are formed.

Each of these layers can be patterned using photo and etching techniques. For example, a photoresist pattern for separating cells is formed on the metal layer 61, and the metal layer 61, the P-type semiconductor layer 59, the active layer 57, and N are formed by using the photoresist pattern as an etching mask. The semiconductor layer 55 and the buffer layer 53 are etched sequentially. Accordingly, the N-type semiconductor layers 55a and the buffer layers 53a spaced apart from each other are formed. Thereafter, a photoresist pattern defining an exposed area of the N-type semiconductor layer 55a is formed on the substrate having the separated cells, and the metal layer 61, the P-type semiconductor layer 59, and the like are used as an etching mask. The active layer is sequentially etched to expose the top surface of the N-type semiconductor layer 55a. As a result, a P-type semiconductor layer 59a located on a portion of each of the N-type semiconductor layers 55a, a metal layer 61a located on the P-type semiconductor layer 59a, and the P-type semiconductor layer ( The active layers 57a interposed between 59a and the N-type semiconductor layer 55a are formed.

Alternatively, the upper surface of the N-type semiconductor layer 55 is first exposed to form the metal layer 61a, the P-type semiconductor layer 59a and the active layer 57a, and then the exposed N-type semiconductor layer and the buffer layer are formed. The N-type semiconductor layers 55a and the buffer layers 53a may be formed by patterning again.

While patterning the buffer layers 53a, the ion implantation layer 51a may also be patterned.

In the present embodiment, the buffer layer 53 may be a conductive buffer layer. In contrast, when the buffer layer 53 is an insulating layer, the process of forming the buffer layers 53a by patterning the buffer layer may be omitted.

2 and 6, metal wirings 65 electrically connecting the light emitting cells 56 are formed (step 11). The metal wires 65 connect the light emitting cells 56 to form a series light emitting cell array. At least two series of light emitting cell arrays may be formed on the substrate 51, and the arrays are arranged to be driven by currents flowing opposite to each other. Alternatively, a bridge rectifier including light emitting cells 56 together with a series light emitting cell array may be formed on the substrate 51.

The metal wires 65 may be formed using a metal wire or an electroplating technique. When the metal wires 65 are formed using the electroplating technique, the metal wires 65 may be formed by an air bridge method or a step-coverage method.

Meanwhile, before forming the metal wires 65, an ohmic contact layer 63 may be further formed on the exposed N-type semiconductor layer 55a, and an ohmic contact may also be formed on the P-type semiconductor layer 59a. Layers (not shown) may be formed.

According to the present exemplary embodiment, light emitting devices that may be driven by an AC power source may be provided with light emitting cell arrays connected in series on the substrate 51. On the other hand, by forming the ion implantation layer 51a converted into an insulating layer, it is possible to provide light emitting cells electrically insulated from a conductive substrate 51 such as a SiC substrate, thereby preventing an increase in manufacturing cost.

7 is a flowchart illustrating a method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate according to another embodiment of the present invention. FIGS. 8 to 12 are views illustrating the light emitting device according to the flowchart of FIG. 7. Sectional drawing for demonstrating the manufacturing method.

7 and 8, the substrate 71 is prepared (step 101). The substrate may be, for example, a conductive silicon carbide substrate, a semiconductor gallium nitride (GaN), an aluminum nitride (AlN) substrate, or the like.

A buffer layer 73 is formed on the substrate 71 (step 103). As described with reference to FIG. 4, the buffer layer may be a III-N-based material such as AlN, InN, or GaN.

7 and 9, impurity ions are implanted into the buffer layer 73 using an ion implant technique to convert the buffer layer into an insulating layer (step 105). The buffer layer into which the impurity ions are implanted is defined as an ion implantation layer 73a.

The ion may be an alkali metal ion, alkaline earth metal ion or transition metal ion. For example, the ions may be Mg ions, Cr ions or Fe ions.

In the buffer layer 73 formed without implanting impurity ions, residual oxygen ions or the like act as an electron donor to form an N-type semiconductor layer. Therefore, the buffer layer 73 can be converted into an insulating layer by injecting metal ions acting as an electron acceptor to offset the electron donor. In this case, the ion implantation layer 73a is a semi-insulating layer having a higher resistance than the N-type semiconductor layer.

7 and 10, as described with reference to the ion implantation layer 73a and FIG. 4, an N-type semiconductor layer 75, an active layer 77, and a P-type semiconductor layer 79 are formed ( Step 107). In addition, a metal layer 81 may be further formed on the P-type semiconductor layer 79.

7 and 11, the metal layer 81, the P-type semiconductor layer 79, the active layer 77, the N-type semiconductor layer 75, and the ion implantation layer 73a are patterned to separate cells. The top surface of the N-type semiconductor layer 75 is exposed (step 109). As a result, light emitting cells 76 having the exposed N-type semiconductor layer 75a are formed.

Patterning the metal layer 81, the semiconductor layers 75, 77, 79, and the ion implantation layer 73a includes the metal layer 61, the semiconductor layers 55, 57, 59, and It is the same as patterning the buffer layer 53. As a result, buffer layers 73b spaced apart from each other are formed, and the N-type semiconductor layer 75a positioned on each of the buffer layers 73b and P located above a portion of the N-type semiconductor layer 75a are formed. The light emitting cell 56 including the type semiconductor layer 79a and an active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer is formed.

Referring to FIGS. 7 and 12, as described with reference to FIG. 6, metal wires 85 electrically connecting the light emitting cells 76 are formed (step 111). Before forming the metal wires 85, an ohmic contact layer 83 may be further formed on the exposed N-type semiconductor layer 75a, and an ohmic contact layer may also be formed on the P-type semiconductor layer 79a. (Not shown) can be formed.

According to the present exemplary embodiment, the light emitting cells 76 may be electrically insulated from the substrate 71 by converting the buffer layer 73 into an insulating layer. Therefore, a plurality of light emitting cells can be formed on the conductive silicon carbide substrate.

Hereinafter, light emitting devices according to embodiments of the present invention will be described in detail.

Referring back to FIG. 6, the light emitting device according to the embodiment of the present invention includes a substrate 51. The substrate may be a conductive substrate such as a conductive silicon carbide substrate, an AlN substrate, or a GaN substrate.

A plurality of light emitting cells 56 are spaced apart from each other on the substrate 51. Each of the light emitting cells includes an N-type semiconductor layer 55a, an active layer 57a, and a P-type semiconductor layer 59a. The P-type semiconductor layer is positioned over a portion of the N-type semiconductor layer 55a, and the active layer is interposed between the P-type semiconductor layer 59a and the N-type semiconductor layer 55a. Thus, an upper surface of a portion of the N-type semiconductor layer 55a is exposed.

Meanwhile, an ion implantation layer 51a is interposed between the substrate 51 and the light emitting cells 56. The ion implantation layer 51a is an insulating layer in which ions are implanted on the surface of the substrate 51 by ion implant technology, and the surface of the substrate 51 is converted. The light emitting cells 56 are electrically insulated from the substrate 51 by the ion implantation layer 51a.

When the substrate is a silicon carbide or AlN substrate, the ions may be oxygen, silicon, carbon, inert gas or hydrogen ions, or mixed ions thereof, and the insulating layer may be a silicon oxide layer or an aluminum oxide layer. When the substrate is GaN, the ions may be alkali metal ions, alkaline earth metal ions or transition metal ions, and the insulating layer is semi-insulating GaN.

Meanwhile, buffer layers 53a may be interposed between the ion implantation layer 51a and the light emitting cells 56. The buffer layers may be spaced apart from each other.

Metal wires 65 may electrically connect the light emitting cells. In addition, an ohmic contact layer 63 may be interposed between the metal wires and the N-type semiconductor layer 55a, and a metal layer 61a is disposed between the metal wires and the P-type semiconductor layer 59a, respectively. Can be located. The metal layer 61a may be a transparent electrode layer. In addition, an ohmic contact layer (not shown) may be further interposed between the metal wires and the P-type semiconductor layer 59a.

At least two series of light emitting cell arrays may be formed on the substrate 51 by the metal wires 65. The series light emitting cell arrays are arranged to be driven by currents flowing opposite to each other. In addition, a bridge rectifier may be disposed together with the series light emitting cell array on the substrate 51. Accordingly, the light emitting device can be driven by directly connecting to an AC power source.

Referring to FIG. 12, a light emitting device according to another embodiment of the present invention includes a substrate 71. As described above with reference to FIG. 6, the light emitting cells 76 are spaced apart from each other, and the light emitting cells 76 may be electrically connected to each other by metal wires 85. have.

Meanwhile, an ion implantation layer 73b is interposed between the light emitting cells 76 and the substrate 71. The ion implantation layer 73b is a buffer layer in which ions are implanted and converted into an insulating layer by an ion implant technique, and may be a III-N-based material such as AlN, InN, or GaN. In this case, the ions may be alkali metal ions, alkaline earth metal ions or transition metal ions, for example, Mg ions, Cr ions or Fe ions.

The light emitting devices according to the embodiments have light emitting cells 56 or 76 insulated from the substrate by the ion implantation layer 51a or 73b. Therefore, it is possible to prevent the light emitting cells from being shorted by the substrate.

According to embodiments of the present invention, it is possible to provide a light emitting device which can be driven by directly connecting to an AC power source, wherein a plurality of light emitting cells formed on a single substrate by adopting an ion implantation layer are electrically separated from the substrate. A light emitting device can be provided. Accordingly, it is possible to use an inexpensive conductive silicon carbide substrate which is excellent in thermal conductivity.

Claims (9)

Board; A plurality of light emitting cells spaced apart from each other on the substrate; And A light emitting device having a plurality of light emitting cells insulated from the substrate, characterized in that it comprises an ion implantation layer interposed between the substrate and the plurality of light emitting cells, the ion is implanted into an insulating layer. The method according to claim 1, The ion implantation layer is a light emitting device having a plurality of light emitting cells insulated from a substrate, characterized in that the ion implanted into the surface of the silicon carbide substrate by the ion implant is converted to the surface of the substrate. The method according to claim 2, And a plurality of light emitting cells insulated from the substrate, wherein the ions are oxygen ions. The method according to claim 2, And a plurality of light emitting cells insulated from the substrate further comprising a buffer layer interposed between the ion implantation layer and the light emitting cells. The method according to claim 1, The ion implantation layer is a light emitting device having a plurality of light emitting cells insulated from a substrate, characterized in that the buffer layer is ion implanted by the ion implant and converted into an insulating layer. The method according to claim 5, The buffer layer is a III-N-based material, And a plurality of light emitting cells insulated from the substrate, wherein the ions are iron (Fe) ions. Prepare the substrate, Implanting ions into the surface of the substrate using ion implantation technology to form an ion implantation layer, A method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate comprising forming a plurality of light emitting cells spaced apart from each other on the substrate implanted with the ions. The method according to claim 7, A method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate further comprising forming a buffer layer on the ion implantation layer before forming the plurality of light emitting cells. Prepare the substrate, Forming a buffer layer on the substrate, Implanting ions into the buffer layer using an ion implant technique to convert the buffer layer into an insulating layer, A method of manufacturing a light emitting device having a plurality of light emitting cells insulated from a substrate comprising forming a plurality of light emitting cells spaced apart from each other on the buffer layer converted to the insulating layer.

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