KR20010093681A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR20010093681A KR20010093681A KR1020010014980A KR20010014980A KR20010093681A KR 20010093681 A KR20010093681 A KR 20010093681A KR 1020010014980 A KR1020010014980 A KR 1020010014980A KR 20010014980 A KR20010014980 A KR 20010014980A KR 20010093681 A KR20010093681 A KR 20010093681A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor chip
- wiring board
- wiring
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/1627—Disposition stacked type assemblies, e.g. stacked multi-cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (5)
- 반도체 칩과,상기 반도체 칩의 한쪽 표면측에 접합되며, 상기 반도체 칩과 전기 접속된 배선기판과,상기 반도체 칩의 다른 쪽의 표면측에 접합되며, 상기 배선기판과 동일한 재료로 된 휘어짐 방지기판을 포함하는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 배선기판의 상기 반도체 칩과는 반대측의 표면에, 표면실장용의 외부접속부재가 배치되어 있는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 휘어짐 방지기판은 별도의 배선기판으로서, 이 휘어짐 방지기판의 상기 반도체 칩과는 반대측에, 그 휘어짐 방지기판에 전기 접속된 별도의 반도체 칩이 접합되어 있는 것을 특징으로 하는 반도체장치.
- 제 2항에 있어서,상기 휘어짐 방지기판은 별도의 배선기판으로서, 이 휘어짐 방지기판의 상기 반도체 칩과는 반대측에, 그 휘어짐 방지기판에 전기 접속된 별도의 반도체 칩이접합되어 있는 것을 특징으로 하는 반도체장치.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서,상기 배선기판과 휘어짐 방지기판 사이에, 이들을 전기 접속하기 위한 배선재가 개재 실장되어 있는 것을 특징으로 하는 반도체장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000089164A JP2001274196A (ja) | 2000-03-28 | 2000-03-28 | 半導体装置 |
JP2000-89164 | 2000-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010093681A true KR20010093681A (ko) | 2001-10-29 |
KR100830787B1 KR100830787B1 (ko) | 2008-05-20 |
Family
ID=18604951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010014980A Expired - Lifetime KR100830787B1 (ko) | 2000-03-28 | 2001-03-22 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6777787B2 (ko) |
JP (1) | JP2001274196A (ko) |
KR (1) | KR100830787B1 (ko) |
TW (1) | TW501239B (ko) |
Families Citing this family (60)
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US7605479B2 (en) * | 2001-08-22 | 2009-10-20 | Tessera, Inc. | Stacked chip assembly with encapsulant layer |
TWI226110B (en) * | 2004-03-17 | 2005-01-01 | Cyntec Co Ltd | Package with stacked substrates |
EP1775768A1 (en) * | 2004-06-04 | 2007-04-18 | ZyCube Co., Ltd. | Semiconductor device having three-dimensional stack structure and method for manufacturing the same |
WO2006019156A1 (ja) | 2004-08-20 | 2006-02-23 | Zycube Co., Ltd. | 三次元積層構造を持つ半導体装置の製造方法 |
KR101313391B1 (ko) | 2004-11-03 | 2013-10-01 | 테세라, 인코포레이티드 | 적층형 패키징 |
US7829989B2 (en) * | 2005-09-07 | 2010-11-09 | Alpha & Omega Semiconductor, Ltd. | Vertical packaged IC device modules with interconnected 3D laminates directly contacts wafer backside |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US8114707B2 (en) * | 2010-03-25 | 2012-02-14 | International Business Machines Corporation | Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
JP2011044755A (ja) * | 2010-12-03 | 2011-03-03 | Rohm Co Ltd | 半導体装置 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
US9105483B2 (en) | 2011-10-17 | 2015-08-11 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
JP6008582B2 (ja) * | 2012-05-28 | 2016-10-19 | 新光電気工業株式会社 | 半導体パッケージ、放熱板及びその製造方法 |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
KR101443972B1 (ko) * | 2012-10-31 | 2014-09-23 | 삼성전기주식회사 | 일체형 전력 반도체 모듈 |
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US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
WO2019181589A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社村田製作所 | 高周波モジュールおよび通信装置 |
KR102446108B1 (ko) * | 2018-03-23 | 2022-09-22 | 가부시키가이샤 무라타 세이사쿠쇼 | 고주파 모듈 및 통신 장치 |
JP2021106341A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社村田製作所 | 高周波モジュールおよび通信装置 |
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JPH06216194A (ja) * | 1993-01-12 | 1994-08-05 | Sony Corp | 半導体チップの実装構造 |
JPH07106509A (ja) * | 1993-09-29 | 1995-04-21 | Nitto Denko Corp | 多層構造半導体装置 |
US5952725A (en) * | 1996-02-20 | 1999-09-14 | Micron Technology, Inc. | Stacked semiconductor devices |
EP0824301A3 (en) * | 1996-08-09 | 1999-08-11 | Hitachi, Ltd. | Printed circuit board, IC card, and manufacturing method thereof |
JP3219043B2 (ja) * | 1998-01-07 | 2001-10-15 | 日本電気株式会社 | 半導体装置のパッケージ方法および半導体装置 |
KR100260997B1 (ko) * | 1998-04-08 | 2000-07-01 | 마이클 디. 오브라이언 | 반도체패키지 |
JP2000223645A (ja) * | 1999-02-01 | 2000-08-11 | Mitsubishi Electric Corp | 半導体装置 |
-
2000
- 2000-03-28 JP JP2000089164A patent/JP2001274196A/ja active Pending
-
2001
- 2001-03-21 TW TW090106567A patent/TW501239B/zh not_active IP Right Cessation
- 2001-03-22 KR KR1020010014980A patent/KR100830787B1/ko not_active Expired - Lifetime
- 2001-06-11 US US09/814,057 patent/US6777787B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6777787B2 (en) | 2004-08-17 |
KR100830787B1 (ko) | 2008-05-20 |
US20020008318A1 (en) | 2002-01-24 |
JP2001274196A (ja) | 2001-10-05 |
TW501239B (en) | 2002-09-01 |
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