KR19990081722A - 카르복실기 함유 지환족 유도체 및 그의 제조방법 - Google Patents
카르복실기 함유 지환족 유도체 및 그의 제조방법 Download PDFInfo
- Publication number
- KR19990081722A KR19990081722A KR1019980016223A KR19980016223A KR19990081722A KR 19990081722 A KR19990081722 A KR 19990081722A KR 1019980016223 A KR1019980016223 A KR 1019980016223A KR 19980016223 A KR19980016223 A KR 19980016223A KR 19990081722 A KR19990081722 A KR 19990081722A
- Authority
- KR
- South Korea
- Prior art keywords
- formula
- hydrogen
- butyl
- alicyclic derivative
- derivative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 125000002723 alicyclic group Chemical group 0.000 title claims abstract description 25
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims description 44
- 239000001257 hydrogen Substances 0.000 claims abstract description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Chemical group 0.000 claims abstract description 14
- 229910052760 oxygen Chemical group 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- 239000000178 monomer Substances 0.000 claims abstract description 9
- 150000002431 hydrogen Chemical group 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 55
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 38
- 159000000000 sodium salts Chemical class 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical class OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 22
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- -1 chloro, bromo, iodo Chemical group 0.000 claims description 16
- NGGGZUAEOKRHMA-UHFFFAOYSA-N 3-[(2-methylpropan-2-yl)oxy]-3-oxopropanoic acid Chemical compound CC(C)(C)OC(=O)CC(O)=O NGGGZUAEOKRHMA-UHFFFAOYSA-N 0.000 claims description 12
- CLPHAYNBNTVRDI-UHFFFAOYSA-N ditert-butyl propanedioate Chemical compound CC(C)(C)OC(=O)CC(=O)OC(C)(C)C CLPHAYNBNTVRDI-UHFFFAOYSA-N 0.000 claims description 12
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 11
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 claims description 10
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 7
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- LUMNWCHHXDUKFI-UHFFFAOYSA-N 5-bicyclo[2.2.1]hept-2-enylmethanol Chemical group C1C2C(CO)CC1C=C2 LUMNWCHHXDUKFI-UHFFFAOYSA-N 0.000 claims description 3
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cis-cyclohexene Natural products C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910001415 sodium ion Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 3
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 claims 1
- 230000002194 synthesizing effect Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 54
- 230000015572 biosynthetic process Effects 0.000 description 38
- 238000003786 synthesis reaction Methods 0.000 description 38
- 229910052757 nitrogen Inorganic materials 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 26
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 229940050176 methyl chloride Drugs 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 description 4
- AJIBZRIAUXVGQJ-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carbaldehyde Chemical compound C1C2C(C=O)CC1C=C2 AJIBZRIAUXVGQJ-UHFFFAOYSA-N 0.000 description 4
- HXYXVFUUHSZSNV-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carbonyl chloride Chemical compound C1C2C(C(=O)Cl)CC1C=C2 HXYXVFUUHSZSNV-UHFFFAOYSA-N 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 3
- PRWXGRGLHYDWPS-UHFFFAOYSA-L sodium malonate Chemical compound [Na+].[Na+].[O-]C(=O)CC([O-])=O PRWXGRGLHYDWPS-UHFFFAOYSA-L 0.000 description 3
- GWYPDXLJACEENP-UHFFFAOYSA-N 1,3-cycloheptadiene Chemical group C1CC=CC=CC1 GWYPDXLJACEENP-UHFFFAOYSA-N 0.000 description 2
- RAAJBHXFLMTHRY-UHFFFAOYSA-N 2-(2-bicyclo[2.2.1]hept-5-enyloxycarbonyl)-2-(hydroxymethyl)-3,3-dimethylbutanoic acid Chemical compound C1C2C(OC(=O)C(CO)(C(O)=O)C(C)(C)C)CC1C=C2 RAAJBHXFLMTHRY-UHFFFAOYSA-N 0.000 description 2
- CGXCMZDMLDCGMV-UHFFFAOYSA-N 2-(2-bicyclo[2.2.1]hept-5-enyloxycarbonyl)-3-tert-butyl-3-hydroxy-4,4-dimethylpentanoic acid Chemical compound C1C2C(OC(=O)C(C(O)=O)C(O)(C(C)(C)C)C(C)(C)C)CC1C=C2 CGXCMZDMLDCGMV-UHFFFAOYSA-N 0.000 description 2
- HSUHHSYSLWUVOH-UHFFFAOYSA-N 2-(2-bicyclo[2.2.1]hept-5-enyloxycarbonyl)-3-tert-butyl-4,4-dimethylpentanoic acid Chemical compound C1C2C(OC(=O)C(C(O)=O)C(C(C)(C)C)C(C)(C)C)CC1C=C2 HSUHHSYSLWUVOH-UHFFFAOYSA-N 0.000 description 2
- PLAQEGSKVZPXTD-UHFFFAOYSA-N 2-(2-bicyclo[2.2.2]oct-5-enyloxycarbonyl)-2,3,3-trimethylbutanoic acid Chemical compound C1CC2C(OC(=O)C(C)(C(O)=O)C(C)(C)C)CC1C=C2 PLAQEGSKVZPXTD-UHFFFAOYSA-N 0.000 description 2
- AORWJEQODQGNOY-UHFFFAOYSA-N 2-(2-bicyclo[2.2.2]oct-5-enyloxycarbonyl)-2-(hydroxymethyl)-3,3-dimethylbutanoic acid Chemical compound C1CC2C(OC(=O)C(CO)(C(O)=O)C(C)(C)C)CC1C=C2 AORWJEQODQGNOY-UHFFFAOYSA-N 0.000 description 2
- WQLVFUDXGJJTQO-UHFFFAOYSA-N 2-(2-bicyclo[2.2.2]oct-5-enyloxycarbonyl)-3-tert-butyl-3-hydroxy-4,4-dimethylpentanoic acid Chemical compound C1CC2C(OC(=O)C(C(O)=O)C(O)(C(C)(C)C)C(C)(C)C)CC1C=C2 WQLVFUDXGJJTQO-UHFFFAOYSA-N 0.000 description 2
- OIRJLSPDNZOVPE-UHFFFAOYSA-N 2-(2-bicyclo[2.2.2]oct-5-enyloxycarbonyl)-3-tert-butyl-4,4-dimethylpentanoic acid Chemical compound C1CC2C(OC(=O)C(C(O)=O)C(C(C)(C)C)C(C)(C)C)CC1C=C2 OIRJLSPDNZOVPE-UHFFFAOYSA-N 0.000 description 2
- GGQIUTYAXWIGEM-UHFFFAOYSA-N 2-(2-bicyclo[3.2.2]non-6-enyloxycarbonyl)-2,3,3-trimethylbutanoic acid Chemical compound CC(C)(C)C(C)(C(O)=O)C(=O)OC1CCC2C=CC1CC2 GGQIUTYAXWIGEM-UHFFFAOYSA-N 0.000 description 2
- GYNJXNAYWVRGGQ-UHFFFAOYSA-N 2-(2-bicyclo[3.2.2]non-6-enyloxycarbonyl)-2-(hydroxymethyl)-3,3-dimethylbutanoic acid Chemical compound CC(C)(C)C(CO)(C(O)=O)C(=O)OC1CCC2C=CC1CC2 GYNJXNAYWVRGGQ-UHFFFAOYSA-N 0.000 description 2
- KINATLLXJDTFKR-UHFFFAOYSA-N 2-(2-bicyclo[3.2.2]non-6-enyloxycarbonyl)-3-tert-butyl-3-hydroxy-4,4-dimethylpentanoic acid Chemical compound CC(C)(C)C(O)(C(C)(C)C)C(C(O)=O)C(=O)OC1CCC2C=CC1CC2 KINATLLXJDTFKR-UHFFFAOYSA-N 0.000 description 2
- FBPZYOBKBXYRNP-UHFFFAOYSA-N 2-(4-bicyclo[3.2.2]non-6-enyl)-2-(hydroxymethyl)propanedioic acid Chemical group OCC(C(O)=O)(C(O)=O)C1CCC2C=CC1CC2 FBPZYOBKBXYRNP-UHFFFAOYSA-N 0.000 description 2
- KYNQEDAPZYSZAQ-UHFFFAOYSA-N 2-(4-bicyclo[3.2.2]non-6-enyl)-2-methylpropanedioic acid Chemical compound OC(=O)C(C(O)=O)(C)C1CCC2C=CC1CC2 KYNQEDAPZYSZAQ-UHFFFAOYSA-N 0.000 description 2
- DLKPOHSAMQEOGK-UHFFFAOYSA-N 2-(5-bicyclo[2.2.1]hept-2-enyl)-2-methylpropanedioic acid Chemical compound C1C2C(C(C)(C(O)=O)C(O)=O)CC1C=C2 DLKPOHSAMQEOGK-UHFFFAOYSA-N 0.000 description 2
- JTJSLEUTNWDCBE-UHFFFAOYSA-N 2-(5-bicyclo[2.2.2]oct-2-enyl)-2-(hydroxymethyl)propanedioic acid Chemical group C1CC2C(C(CO)(C(O)=O)C(O)=O)CC1C=C2 JTJSLEUTNWDCBE-UHFFFAOYSA-N 0.000 description 2
- QMOOCYWEOBDGNM-UHFFFAOYSA-N 2-(5-bicyclo[2.2.2]oct-2-enyl)-2-methylpropanedioic acid Chemical compound C1CC2C(C(C)(C(O)=O)C(O)=O)CC1C=C2 QMOOCYWEOBDGNM-UHFFFAOYSA-N 0.000 description 2
- PKNPHVODGZDUQM-UHFFFAOYSA-N 2-(bicyclo[2.2.1]hept-2-ene-5-carbonyl)propanedioic acid Chemical compound C1C2C(C(=O)C(C(O)=O)C(=O)O)CC1C=C2 PKNPHVODGZDUQM-UHFFFAOYSA-N 0.000 description 2
- SGTVMBZGVBAHAA-UHFFFAOYSA-N 2-(bicyclo[2.2.1]hept-5-ene-2-carbonyloxycarbonyl)-2-tert-butyl-3,3-dimethylbutanoic acid Chemical compound C1C2C(C(=O)OC(=O)C(C(O)=O)(C(C)(C)C)C(C)(C)C)CC1C=C2 SGTVMBZGVBAHAA-UHFFFAOYSA-N 0.000 description 2
- PDLRGAWHMDNOPW-UHFFFAOYSA-N 2-(bicyclo[2.2.2]oct-2-ene-5-carbonyl)propanedioic acid Chemical compound C1CC2C(C(=O)C(C(O)=O)C(=O)O)CC1C=C2 PDLRGAWHMDNOPW-UHFFFAOYSA-N 0.000 description 2
- ZBAORWGRHMWBRC-UHFFFAOYSA-N 2-(bicyclo[3.2.2]non-6-ene-4-carbonyl)propanedioic acid Chemical compound OC(=O)C(C(O)=O)C(=O)C1CCC2C=CC1CC2 ZBAORWGRHMWBRC-UHFFFAOYSA-N 0.000 description 2
- WEWICUUILURJDD-UHFFFAOYSA-N CC(C)(C)C(C(=O)O)(C(=O)OC(=O)C1CC2CCC1C=C2)C(C)(C)C Chemical compound CC(C)(C)C(C(=O)O)(C(=O)OC(=O)C1CC2CCC1C=C2)C(C)(C)C WEWICUUILURJDD-UHFFFAOYSA-N 0.000 description 2
- XZKDKLAAPTWBBM-UHFFFAOYSA-N CC(C)(C)C(C(=O)O)(C(=O)OC(=O)C1CCC2CCC1C=C2)C(C)(C)C Chemical compound CC(C)(C)C(C(=O)O)(C(=O)OC(=O)C1CCC2CCC1C=C2)C(C)(C)C XZKDKLAAPTWBBM-UHFFFAOYSA-N 0.000 description 2
- SYHALDZRXIRPFN-UHFFFAOYSA-N CC(C)(C)C(C(C)(C)C)C(C1CCC2CCC1C=C2)(C(=O)O)C(=O)O Chemical compound CC(C)(C)C(C(C)(C)C)C(C1CCC2CCC1C=C2)(C(=O)O)C(=O)O SYHALDZRXIRPFN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001334 alicyclic compounds Chemical class 0.000 description 2
- KCHFYKPIADOPBJ-UHFFFAOYSA-N bicyclo[2.2.2]oct-2-ene-5-carbaldehyde Chemical compound C1CC2C(C=O)CC1C=C2 KCHFYKPIADOPBJ-UHFFFAOYSA-N 0.000 description 2
- ZDNKEMHHRSOINP-UHFFFAOYSA-N bicyclo[2.2.2]oct-2-ene-5-carbonyl chloride Chemical compound C1CC2C(C(=O)Cl)CC1C=C2 ZDNKEMHHRSOINP-UHFFFAOYSA-N 0.000 description 2
- ULDXKVSCLFPLJV-UHFFFAOYSA-N bicyclo[3.2.2]non-6-ene-4-carbaldehyde Chemical compound O=CC1CCC2C=CC1CC2 ULDXKVSCLFPLJV-UHFFFAOYSA-N 0.000 description 2
- UAACRXBGSHMRCZ-UHFFFAOYSA-N bicyclo[3.2.2]non-6-ene-4-carbonyl chloride Chemical compound ClC(=O)C1CCC2C=CC1CC2 UAACRXBGSHMRCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BHKQCEWBIODLIE-UHFFFAOYSA-N 2-(2-bicyclo[2.2.1]hept-5-enyloxycarbonyl)-2,3,3-trimethylbutanoic acid Chemical compound C1C2C(OC(=O)C(C)(C(O)=O)C(C)(C)C)CC1C=C2 BHKQCEWBIODLIE-UHFFFAOYSA-N 0.000 description 1
- SJCADYGBLHOSBN-UHFFFAOYSA-N 2-(5-bicyclo[2.2.1]hept-2-enyl)-2-(hydroxymethyl)propanedioic acid Chemical compound C1C2C(C(CO)(C(O)=O)C(O)=O)CC1C=C2 SJCADYGBLHOSBN-UHFFFAOYSA-N 0.000 description 1
- SBUKLPSBNFWJCU-UHFFFAOYSA-N ClIBr Chemical compound ClIBr SBUKLPSBNFWJCU-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
- C07C59/40—Unsaturated compounds
- C07C59/42—Unsaturated compounds containing hydroxy or O-metal groups
- C07C59/46—Unsaturated compounds containing hydroxy or O-metal groups containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C57/00—Unsaturated compounds having carboxyl groups bound to acyclic carbon atoms
- C07C57/26—Unsaturated compounds having carboxyl groups bound to acyclic carbon atoms containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
- C07C59/40—Unsaturated compounds
- C07C59/76—Unsaturated compounds containing keto groups
- C07C59/80—Unsaturated compounds containing keto groups containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/28—Preparation of carboxylic acid esters by modifying the hydroxylic moiety of the ester, such modification not being an introduction of an ester group
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/608—Esters of carboxylic acids having a carboxyl group bound to an acyclic carbon atom and having a ring other than a six-membered aromatic ring in the acid moiety
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
- C07C69/732—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids of unsaturated hydroxy carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
- C07C69/738—Esters of keto-carboxylic acids or aldehydo-carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
- C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
- C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims (16)
- 하기 화학식 1로 표시되는 카르복실기 함유 지환족 유도체.화학식 1상기식에서R1및 R2는 같거나 다르며 수소 또는 t-부틸을 나타내며,X는 수소, 하이드록시 또는 산소를 나타내며,n은 1 내지 3의 수를 나타낸다.
- 제 1 항에 있어서, R1및 R2가 각각 t-부틸이고 X가 산소인 화학식 1의 지환족 유도체:
- 제 1 항에 있어서, R1이 t-부틸이고 R2가 수소이고 X가 산소인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1및 R2가 각각 수소이고 X가 산소인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1및 R2가 각각 t-부틸이고 X가 하이드록시인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1이 t-부틸이고 R2가 수소이고 X가 하이드록시인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1및 R2가 각각 수소이고 X가 하이드록시인 화학식 1의지환족 유도체.
- 제 1 항에 있어서, R1및 R2가 각각 t-부틸이고 X가 수소인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1이 t-부틸이고 R2가 수소이고 X가 수소인 화학식 1의 지환족 유도체.
- 제 1 항에 있어서, R1및 R2가 각각 수소이고 X가 수소인 화학식 1의 지환족 유도체.
- 하기 화학식 2로 표시되는 화합물 및 하기 화학식 3으로 표시되는 말론산염를 용매의 존재하에 반응시킴을 특징으로 하는 하기 화학식 1로 표시되는 카를복실기 함유 지환족유도체의 제조방법.상기식에서,R1및 R2는 같거나 다르며 수소 또는 t-부틸을 나타내며,X는 수소, 하이드록시 또는 산소를 나타내며,n은 1 내지 3의 수를 나타내며,R3은 수소 또는 클로로, 브로모, 요오도등의 할로겐을 나타내며,Y는 수소 또는 산소를 나타내며,R4및 R5는 같거나 다르며 t-부틸 또는 나트륨이온을 나타낸다.
- 제 11 항에 있어서, R3이 수소 또는 할로겐이고 Y가 산소인 화학식 2의 화합물이 1,3-시클로펜타디엔, 1,3-시클로헥사디엔 또는 1,3-시클로헵타디엔을 아크로일할라이드 또는 아크로레인과 1 : 1의 당량비로 -20 내지 30℃의 온도에서 반응시켜 제조된 것인 지환족 유도체의 제조방법.
- 제 11 항에 있어서, R3이 할로겐이고 Y가 수소인 화학식 2의 화합물이 5-노르보넨-2-메탄올, [2,2,2]바이시클로옥텐-2-메탄올 또는 [3,2,2]바이시클로노넨-6-메탄올과 약간 과잉의 티오닐클로라이드(1.2당량)을 0 내지 25℃의 온도에서 반응시켜 제조된 것인 지환족 유도체의 제조방법.
- 제 11 항에 있어서, 화학식 3의 말론산염이 다음의 나트륨염중에서 선택된 것인 지환족 유도체의 제조방법.·말론산 디-t-부틸에스테르의 나트륨염 ;·말론산 모노-t-부틸에스테르의 나트륨염 ;·말론산의 나트륨염 ;
- 제 11 항에 있어서, 용매가 테트라하이드로푸란(THF), 디메틸포름아미드(DMF) 또는 디옥산인 지환족 유도체의 제조방법.
- 제1항 내지 제10항중 어느 하나에 정의된 화학식 1의 카르복실기 함유 지환족유도체를 KrF, ArF, E-beam, X-ray 또는 EUV용 포토레지스트 수지의 합성에 유효한 모노머로 사용하는 지환족 유도체의 제조방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980016223A KR19990081722A (ko) | 1998-04-30 | 1998-04-30 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
US09/302,064 US6265130B1 (en) | 1998-04-30 | 1999-04-29 | Photoresist polymers of carboxyl-containing alicyclic compounds |
JP12537999A JP3646020B2 (ja) | 1998-04-30 | 1999-04-30 | フォトレジスト単量体とその製造方法、フォトレジスト共重合体、フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子 |
GB9909922A GB2336843B (en) | 1998-04-30 | 1999-04-30 | Carboxyl-containing alicyclic compounds and a process for preparing the same |
TW088107017A TW499628B (en) | 1998-04-30 | 1999-04-30 | Carboxyl-containing alicyclic compounds and a process for preparing the same |
US09/850,177 US6376632B1 (en) | 1998-04-30 | 2001-05-07 | Photoresist polymers of carboxyl-containing alicyclic compounds |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980016223A KR19990081722A (ko) | 1998-04-30 | 1998-04-30 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
Publications (1)
Publication Number | Publication Date |
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KR19990081722A true KR19990081722A (ko) | 1999-11-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019980016223A Ceased KR19990081722A (ko) | 1998-04-30 | 1998-04-30 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6265130B1 (ko) |
JP (1) | JP3646020B2 (ko) |
KR (1) | KR19990081722A (ko) |
GB (1) | GB2336843B (ko) |
TW (1) | TW499628B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557594B1 (ko) * | 1999-08-17 | 2006-03-10 | 주식회사 하이닉스반도체 | 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808859B1 (en) * | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
KR19990081722A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
JP3587743B2 (ja) | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
US6569971B2 (en) * | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
KR100301053B1 (ko) * | 1998-09-21 | 2001-09-22 | 윤종용 | 화학증폭형 포토레지스트용 감광성 중합체 및 이를 포함하는 화학 증폭형 포토레지스트 조성물 |
KR20000056355A (ko) * | 1999-02-19 | 2000-09-15 | 김영환 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
WO2001013179A1 (en) * | 1999-08-13 | 2001-02-22 | Board Of Regents, University Of Texas System | Water-processable photoresist compositions |
KR100535149B1 (ko) * | 1999-08-17 | 2005-12-07 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물 |
JP5095048B2 (ja) * | 1999-11-15 | 2012-12-12 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
KR100501600B1 (ko) * | 1999-11-15 | 2005-07-18 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 |
KR100332463B1 (ko) * | 1999-12-20 | 2002-04-13 | 박찬구 | 노보난계 저분자 화합물 첨가제를 포함하는 화학증폭형레지스트 조성물 |
EP1132774B1 (en) * | 2000-03-06 | 2009-01-07 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist composition and patterning process |
US6482567B1 (en) * | 2000-08-25 | 2002-11-19 | Shipley Company, L.L.C. | Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same |
US6534239B2 (en) * | 2001-04-27 | 2003-03-18 | International Business Machines Corporation | Resist compositions with polymers having pendant groups containing plural acid labile moieties |
JP5039492B2 (ja) * | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
US7951525B2 (en) * | 2008-09-08 | 2011-05-31 | International Business Machines Corporation | Low outgassing photoresist compositions |
CN105924337B (zh) * | 2016-04-27 | 2018-11-13 | 南京工业大学 | 一种在微结构反应器中制备5-降冰片烯-2-甲醛的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6357589A (ja) * | 1986-08-29 | 1988-03-12 | Dainippon Ink & Chem Inc | ビシクロ〔2.2.1〕ヘプタン−2,3,5,6−テトラカルボン酸2無水物類およびその製法 |
US5047574A (en) * | 1988-12-14 | 1991-09-10 | Shionogi & Co., Ltd. | Certain optically active mono esters of dicarboxylic acids |
KR19990061089A (ko) * | 1997-12-31 | 1999-07-26 | 김영환 | 공중합체 수지와 그 제조방법 및 이 수지를 이용한 포토레지스트 |
KR100292406B1 (ko) * | 1998-06-11 | 2001-07-12 | 윤종용 | 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB768813A (en) | 1954-05-07 | 1957-02-20 | Geigy Ag J R | Substituted 1.2-diphenyl-3.5-dioxo-pyrazolidines and processes for the production thereof |
US3370047A (en) | 1964-09-03 | 1968-02-20 | Union Carbide Corp | Pour point depressants and lubricating compositions thereof |
NL6914466A (ko) | 1969-09-24 | 1971-03-26 | ||
US3715330A (en) | 1970-05-20 | 1973-02-06 | Asahi Chemical Ind | Self-thermoset unsaturated polyesters and method for preparation thereof |
JPS5818369B2 (ja) | 1973-09-05 | 1983-04-12 | ジェイエスアール株式会社 | ノルボルネンカルボンサンアミドオヨビ / マタハイミドルイノ ( キヨウ ) ジユウゴウタイノセイゾウホウホウ |
US4106943A (en) | 1973-09-27 | 1978-08-15 | Japan Synthetic Rubber Co., Ltd. | Photosensitive cross-linkable azide containing polymeric composition |
US4440850A (en) | 1981-07-23 | 1984-04-03 | Ciba-Geigy Corporation | Photopolymerisation process with two exposures of a single layer |
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3721741A1 (de) | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
DE68915148T2 (de) | 1988-02-17 | 1994-08-18 | Tosoh Corp | Fotoresist-zusammensetzung. |
JPH0251511A (ja) | 1988-08-15 | 1990-02-21 | Mitsui Petrochem Ind Ltd | 極性基含有環状オレフイン系共重合体およびその製法 |
DE3922546A1 (de) | 1989-07-08 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von cycloolefinpolymeren |
US5252427A (en) | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
DE69114675T2 (de) | 1990-06-06 | 1996-06-13 | Mitsui Petrochemical Industries, Ltd., Tokio/Tokyo | Polyolefin harzzusammensetzung. |
JPH0499967A (ja) | 1990-08-20 | 1992-03-31 | Yokogawa Electric Corp | 実効値直流変換装置 |
JP3000745B2 (ja) | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JPH05297591A (ja) | 1992-04-20 | 1993-11-12 | Fujitsu Ltd | ポジ型放射線レジストとレジストパターンの形成方法 |
US5705503A (en) | 1995-05-25 | 1998-01-06 | Goodall; Brian Leslie | Addition polymers of polycycloolefins containing functional substituents |
JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
CN1198181C (zh) | 1996-03-07 | 2005-04-20 | 住友电木株式会社 | 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物 |
US6232417B1 (en) | 1996-03-07 | 2001-05-15 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100261022B1 (ko) | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
KR100211548B1 (ko) | 1996-12-20 | 1999-08-02 | 김영환 | 원자외선용 감광막 공중합체 및 그 제조방법 |
KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
KR100220953B1 (ko) | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
KR100225956B1 (ko) | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
KR100195583B1 (ko) | 1997-04-08 | 1999-06-15 | 박찬구 | 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물 |
KR19990081722A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
-
1998
- 1998-04-30 KR KR1019980016223A patent/KR19990081722A/ko not_active Ceased
-
1999
- 1999-04-29 US US09/302,064 patent/US6265130B1/en not_active Expired - Lifetime
- 1999-04-30 JP JP12537999A patent/JP3646020B2/ja not_active Expired - Fee Related
- 1999-04-30 TW TW088107017A patent/TW499628B/zh not_active IP Right Cessation
- 1999-04-30 GB GB9909922A patent/GB2336843B/en not_active Expired - Fee Related
-
2001
- 2001-05-07 US US09/850,177 patent/US6376632B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6357589A (ja) * | 1986-08-29 | 1988-03-12 | Dainippon Ink & Chem Inc | ビシクロ〔2.2.1〕ヘプタン−2,3,5,6−テトラカルボン酸2無水物類およびその製法 |
US5047574A (en) * | 1988-12-14 | 1991-09-10 | Shionogi & Co., Ltd. | Certain optically active mono esters of dicarboxylic acids |
KR19990061089A (ko) * | 1997-12-31 | 1999-07-26 | 김영환 | 공중합체 수지와 그 제조방법 및 이 수지를 이용한 포토레지스트 |
KR100292406B1 (ko) * | 1998-06-11 | 2001-07-12 | 윤종용 | 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557594B1 (ko) * | 1999-08-17 | 2006-03-10 | 주식회사 하이닉스반도체 | 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물 |
Also Published As
Publication number | Publication date |
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GB9909922D0 (en) | 1999-06-30 |
GB2336843A (en) | 1999-11-03 |
GB2336843B (en) | 2003-11-05 |
JP3646020B2 (ja) | 2005-05-11 |
US6265130B1 (en) | 2001-07-24 |
JP2000026541A (ja) | 2000-01-25 |
US6376632B1 (en) | 2002-04-23 |
TW499628B (en) | 2002-08-21 |
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