KR100211548B1 - 원자외선용 감광막 공중합체 및 그 제조방법 - Google Patents
원자외선용 감광막 공중합체 및 그 제조방법 Download PDFInfo
- Publication number
- KR100211548B1 KR100211548B1 KR1019960068906A KR19960068906A KR100211548B1 KR 100211548 B1 KR100211548 B1 KR 100211548B1 KR 1019960068906 A KR1019960068906 A KR 1019960068906A KR 19960068906 A KR19960068906 A KR 19960068906A KR 100211548 B1 KR100211548 B1 KR 100211548B1
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive film
- cyclopentene
- norbornene
- butyl
- carboxylic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920001577 copolymer Polymers 0.000 title abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- NNRZTJAACCRFRV-UHFFFAOYSA-N 2-cyclopentene-1-acetic acid Natural products OC(=O)CC1CCC=C1 NNRZTJAACCRFRV-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- -1 2-cyclopentene-1- (t-butyl) acetate Chemical compound 0.000 claims description 5
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims 4
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 claims 4
- TVHBMXJAQHVCSA-UHFFFAOYSA-N ethyl carbamimidate;hydrochloride Chemical compound [Cl-].CCOC(N)=[NH2+] TVHBMXJAQHVCSA-UHFFFAOYSA-N 0.000 claims 3
- RZQRFJYKWMUYLB-UHFFFAOYSA-N bicyclo[2.2.2]oct-2-ene-5-carboxylic acid Chemical compound C1CC2C(C(=O)O)CC1C=C2 RZQRFJYKWMUYLB-UHFFFAOYSA-N 0.000 claims 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 2
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims 2
- 239000003505 polymerization initiator Substances 0.000 claims 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000003999 initiator Substances 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 150000001336 alkenes Chemical group 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 125000002723 alicyclic group Chemical group 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- HVYWMOMLDIMFJA-DPAQBDIFSA-N cholesterol Chemical compound C1C=C2C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 HVYWMOMLDIMFJA-DPAQBDIFSA-N 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- DGAPSMINGCVKLT-UHFFFAOYSA-N 2-tert-butylperoxyperoxy-2-methylpropane Chemical compound CC(C)(C)OOOOC(C)(C)C DGAPSMINGCVKLT-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000012000 cholesterol Nutrition 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (6)
- 주쇄가 2-사이클로펜텐-1-(t-부틸)아세테이트, 바이클로[2.2.2]옥트-5-엔-2-티-부틸 카르복실레이트, 2-t-부틸 카르복실레이트-5-노르보넨, 2-사이클로펜텐-1-아세트산, 바이클로[2.2.2]옥트-5-엔-2-카르복실산, 2-카르복실산-5-노르보넨, 노르보닐렌-2-메탄올, 2-카르복실산-5-노르보넨, 사이클로펜텐, 사이클로헥센 및 노르보넨으로 이루어진 군으로부터 선택된 1 이상의 지방족환형올레핀 유도체의 중합으로 이루어져 있으며, 상기 주쇄에는 말레익안하이드라이드가 포함되지 않는 것을 특징으로 하는 포토레지스트 중합체.
- 제1항에 있어서, 상기 포토레지스트 중합체는 폴리(2-사이클로펜텐-1-아세틱산/바이싸이클로[2.2.2]옥트-5-엔-2-t-부틸 카르복실레이트)인 것을 특징으로 하는 포토레지스트 중합체.
- 제1항에 있어서, 상기 포토레지스트 중합체는 3,000 ~ 200,000의 분자량을 갖는 것을 특징으로 하는 포토레지스트 중합체.
- (a) 2-사이클로펜텐-1-(t-부틸)아세테이트, 바이클로[2.2.2]옥트-5-엔-2-티-부틸 카르복실레이트, 2-t-부틸 카르복실레이트-5-노르보넨, 2-사이클로펜텐-1-아세트산, 바이클로[2.2.2]옥트-5-엔-2-카르복실산, 2-카르복실산-5-노르보넨, 노르보닐렌-2-메탄올, 2-카르복실산-5-노르보넨, 사이클로펜텐, 사이클로헥센 및 노르보넨으로 이루어진 군으로부터 선택된 1 이상의 지방족환형올레핀 유도체를 가압반응기에 넣는 공정과, (b) 상기 가압반응기에 중합개시제를 첨가하는 공정과, (c) 상기 가압반응기를 질소 또는 아르곤 가스분위기에 두는 단계와, (d) 상기 가압반응기에 60 ~ 200의 온도와, 50 ~ 200 가압을 인가하여 반응시키는 공정을 포함하는 것을 특징으로 하는 말레익안하이드라이드가 첨가되지 않은 포토레지스트 중합체의 제조방법.
- 제4항에 있어서, 상기 (b) 단계에서 중합개시제는 t-부틸 펄옥사이드, 디-t-부틸 펄옥사이드, 베조일 펄옥사이드로 이루어진 군으로부터 선택된 1 이상인 것을 특징으로 하는 방법.
- 제4항에 있어서, 상기 (c) 단계는 아르곤가스분위기에서 수행되는 것을 특징으로 하는 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960068906A KR100211548B1 (ko) | 1996-12-20 | 1996-12-20 | 원자외선용 감광막 공중합체 및 그 제조방법 |
US08/992,033 US6143463A (en) | 1996-12-20 | 1997-12-17 | Method and photoresist using a photoresist copolymer |
TW086119045A TW464788B (en) | 1996-12-20 | 1997-12-17 | A photoresist copolymer, a photoresist composition, their preparing methods and a photoresist pattern forming method |
JP35313197A JP3269796B2 (ja) | 1996-12-20 | 1997-12-22 | 感光膜共重合体を利用した感光膜及びその製造方法 |
GB9727095A GB2320501B (en) | 1996-12-20 | 1997-12-22 | Method and photoresist using a photoresist copolymer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960068906A KR100211548B1 (ko) | 1996-12-20 | 1996-12-20 | 원자외선용 감광막 공중합체 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980050128A KR19980050128A (ko) | 1998-09-15 |
KR100211548B1 true KR100211548B1 (ko) | 1999-08-02 |
Family
ID=19489698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960068906A Expired - Fee Related KR100211548B1 (ko) | 1996-12-20 | 1996-12-20 | 원자외선용 감광막 공중합체 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6143463A (ko) |
JP (1) | JP3269796B2 (ko) |
KR (1) | KR100211548B1 (ko) |
GB (1) | GB2320501B (ko) |
TW (1) | TW464788B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400295B1 (ko) * | 1998-10-17 | 2004-02-14 | 주식회사 하이닉스반도체 | 신규한포토레지스트모노머,그의공중합체및이를이용한포토레지스트조성물및제조방법 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100220953B1 (ko) * | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
KR100225956B1 (ko) * | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
KR100321080B1 (ko) * | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
KR19990081722A (ko) | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
KR100376983B1 (ko) * | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR100403325B1 (ko) | 1998-07-27 | 2004-03-24 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한포토레지스트조성물 |
KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
JP3587743B2 (ja) | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
JP3680920B2 (ja) | 1999-02-25 | 2005-08-10 | 信越化学工業株式会社 | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
KR20000073149A (ko) * | 1999-05-07 | 2000-12-05 | 김영환 | 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
KR100647380B1 (ko) * | 1999-07-30 | 2006-11-17 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
KR20010011766A (ko) * | 1999-07-30 | 2001-02-15 | 김영환 | 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물 |
US6277683B1 (en) * | 2000-02-28 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer |
US6350837B1 (en) * | 2000-06-09 | 2002-02-26 | Eastman Chemical Company | Copolymerization of norbornene and functional norbornene monomers |
JP2002343860A (ja) * | 2001-05-17 | 2002-11-29 | Tokyo Ohka Kogyo Co Ltd | 保護膜形成用材料 |
US7138218B2 (en) * | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US7270937B2 (en) * | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
KR100680405B1 (ko) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
KR100598176B1 (ko) | 2004-07-06 | 2006-07-10 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
KR100849800B1 (ko) * | 2006-07-20 | 2008-07-31 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
US8313876B2 (en) * | 2006-07-20 | 2012-11-20 | Hynix Semiconductor Inc. | Exposure mask and method for manufacturing semiconductor device using the same |
US7959818B2 (en) | 2006-09-12 | 2011-06-14 | Hynix Semiconductor Inc. | Method for forming a fine pattern of a semiconductor device |
US7790357B2 (en) * | 2006-09-12 | 2010-09-07 | Hynix Semiconductor Inc. | Method of forming fine pattern of semiconductor device |
KR100861173B1 (ko) * | 2006-12-01 | 2008-09-30 | 주식회사 하이닉스반도체 | 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법 |
KR20080057562A (ko) * | 2006-12-20 | 2008-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
KR100876816B1 (ko) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
KR100919564B1 (ko) * | 2007-06-29 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
KR101037528B1 (ko) * | 2008-10-16 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
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US4106943A (en) * | 1973-09-27 | 1978-08-15 | Japan Synthetic Rubber Co., Ltd. | Photosensitive cross-linkable azide containing polymeric composition |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DK542782A (da) * | 1982-12-07 | 1984-06-08 | Viuff Carl Johan Kofod Finnema | Isoleret roer til gasformige medier og fremgangsmaade til fremstilling af samme |
DE3721741A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
EP0380676B1 (en) * | 1988-02-17 | 1994-05-04 | Tosoh Corporation | Photoresist composition |
JPH0251511A (ja) * | 1988-08-15 | 1990-02-21 | Mitsui Petrochem Ind Ltd | 極性基含有環状オレフイン系共重合体およびその製法 |
DE3922546A1 (de) * | 1989-07-08 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von cycloolefinpolymeren |
US5252427A (en) * | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
WO1991018948A1 (en) * | 1990-06-06 | 1991-12-12 | Mitsui Petrochemical Industries, Ltd. | Polyolefin resin composition |
US5705503A (en) * | 1995-05-25 | 1998-01-06 | Goodall; Brian Leslie | Addition polymers of polycycloolefins containing functional substituents |
EP0885405B1 (en) * | 1996-03-07 | 2005-06-08 | Sumitomo Bakelite Co., Ltd. | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100261022B1 (ko) * | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
-
1996
- 1996-12-20 KR KR1019960068906A patent/KR100211548B1/ko not_active Expired - Fee Related
-
1997
- 1997-12-17 US US08/992,033 patent/US6143463A/en not_active Expired - Lifetime
- 1997-12-17 TW TW086119045A patent/TW464788B/zh not_active IP Right Cessation
- 1997-12-22 GB GB9727095A patent/GB2320501B/en not_active Expired - Fee Related
- 1997-12-22 JP JP35313197A patent/JP3269796B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100400295B1 (ko) * | 1998-10-17 | 2004-02-14 | 주식회사 하이닉스반도체 | 신규한포토레지스트모노머,그의공중합체및이를이용한포토레지스트조성물및제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR19980050128A (ko) | 1998-09-15 |
GB2320501A (en) | 1998-06-24 |
US6143463A (en) | 2000-11-07 |
JP3269796B2 (ja) | 2002-04-02 |
GB2320501B (en) | 2001-02-14 |
GB9727095D0 (en) | 1998-02-25 |
TW464788B (en) | 2001-11-21 |
JPH10207070A (ja) | 1998-08-07 |
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